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Publication of TWI261939BpublicationCriticalpatent/TWI261939B/en
A Group III nitride semiconductor light-emitting device includes a crystal substrate, an n-type and a p-type semiconductor of AlXGaYInZN1-aMa, wherein 0 ≤ X ≤ 1, 0 ≤ Y ≤ 1, 0 ≤ Z ≤ 1, X+Y+Z=1, M denotes a Group V element other than N, and 0 ≤ a < 1, formed on the crystal substrate, and a light-emitting layer including a region doped with Ge.
TW94113604A2004-04-282005-04-28Group III nitride semiconductor light-emitting device
TWI261939B
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