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TW200603269A - Method of barrier layer surface treatment to enable direct copper plating on barrier metal - Google Patents

Method of barrier layer surface treatment to enable direct copper plating on barrier metal

Info

Publication number
TW200603269A
TW200603269A TW094118707A TW94118707A TW200603269A TW 200603269 A TW200603269 A TW 200603269A TW 094118707 A TW094118707 A TW 094118707A TW 94118707 A TW94118707 A TW 94118707A TW 200603269 A TW200603269 A TW 200603269A
Authority
TW
Taiwan
Prior art keywords
substrate
surface treatment
enable direct
copper plating
layer surface
Prior art date
Application number
TW094118707A
Other languages
Chinese (zh)
Other versions
TWI292925B (en
Inventor
Zhi-Wen Sun
Ren-Ren He
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200603269A publication Critical patent/TW200603269A/en
Application granted granted Critical
Publication of TWI292925B publication Critical patent/TWI292925B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Embodiments of a method of barrier layer surface treatment to enable direct copper plating without copper seed layer. In one embodiment, a method of plating copper on a substrate with a group VIII metal layer on top comprises pre-treating the substrate surface by removing a group VIII metal surface oxide layer and/or surface contaminants and plating copper on the pre-treated group VIII metal surface. Pre-treating the substrate can be accomplished by annealing the substrate in an environment with a hydrogen-containing gas environment and/or a non-reactive gas(es) to Ru, by a cathodic treatment in an acid-containing bath, or by immersing the substrate in an acid-containing bath.
TW094118707A 2004-06-10 2005-06-07 Method of barrier layer surface treatment to enable direct copper plating on barrier metal TWI292925B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US57912904P 2004-06-10 2004-06-10
US11/007,857 US20050274621A1 (en) 2004-06-10 2004-12-09 Method of barrier layer surface treatment to enable direct copper plating on barrier metal

Publications (2)

Publication Number Publication Date
TW200603269A true TW200603269A (en) 2006-01-16
TWI292925B TWI292925B (en) 2008-01-21

Family

ID=35459359

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094118707A TWI292925B (en) 2004-06-10 2005-06-07 Method of barrier layer surface treatment to enable direct copper plating on barrier metal

Country Status (5)

Country Link
US (1) US20050274621A1 (en)
EP (1) EP1778896A1 (en)
JP (1) JP2008502806A (en)
TW (1) TWI292925B (en)
WO (1) WO2005123988A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI462178B (en) * 2006-08-30 2014-11-21 Lam Res Corp Self assembled monolayer for improving adhesion between copper and barrier layer

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US7179736B2 (en) * 2004-10-14 2007-02-20 Lsi Logic Corporation Method for fabricating planar semiconductor wafers
US7442267B1 (en) * 2004-11-29 2008-10-28 Novellus Systems, Inc. Anneal of ruthenium seed layer to improve copper plating
KR100617070B1 (en) * 2005-09-13 2006-08-30 동부일렉트로닉스 주식회사 Method for Cleaning Electrochemical Plating Cells
EP1845554A3 (en) * 2006-04-10 2011-07-13 Imec A method to create super secondary grain growth in narrow trenches
US8026605B2 (en) * 2006-12-14 2011-09-27 Lam Research Corporation Interconnect structure and method of manufacturing a damascene structure
JP2009030167A (en) * 2007-07-02 2009-02-12 Ebara Corp Method and apparatus for treating substrate
US7727890B2 (en) 2007-12-10 2010-06-01 International Business Machines Corporation High aspect ratio electroplated metal feature and method
US7919409B2 (en) * 2008-08-15 2011-04-05 Air Products And Chemicals, Inc. Materials for adhesion enhancement of copper film on diffusion barriers
US8076241B2 (en) * 2009-09-30 2011-12-13 Tokyo Electron Limited Methods for multi-step copper plating on a continuous ruthenium film in recessed features
US20110094888A1 (en) * 2009-10-26 2011-04-28 Headway Technologies, Inc. Rejuvenation method for ruthenium plating seed
JP2012092366A (en) * 2010-10-25 2012-05-17 Imec Method of electrodepositing copper
US20130193575A1 (en) * 2012-01-27 2013-08-01 Skyworks Solutions, Inc. Optimization of copper plating through wafer via
US9496145B2 (en) * 2014-03-19 2016-11-15 Applied Materials, Inc. Electrochemical plating methods
KR102275458B1 (en) * 2018-11-30 2021-07-13 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Electrochemical plating system and method of using

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JPS63216976A (en) * 1987-03-03 1988-09-09 Wakamatsu Netsuren Kk Pretreatment by reduction under heating before plating
JPH01147087A (en) * 1987-12-01 1989-06-08 Nec Corp Pretreatment of copper-tungsten alloy before plating
GB9107364D0 (en) * 1991-04-08 1991-05-22 Skw Metals Uk Ltd Coated molybdenum parts and process for their production
JPH06248489A (en) * 1993-02-22 1994-09-06 Tanaka Kikinzoku Kogyo Kk Pre-plating method for corrosion resistant materials
JP3409831B2 (en) * 1997-02-14 2003-05-26 日本電信電話株式会社 Method for manufacturing wiring structure of semiconductor device
JPH11269693A (en) * 1998-03-24 1999-10-05 Japan Energy Corp Copper deposition method and copper plating solution
WO1999053119A1 (en) * 1998-04-13 1999-10-21 Acm Research, Inc Method and apparatus for enhancing adhesion between barrier layer and metal layer formed by plating
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US6362099B1 (en) * 1999-03-09 2002-03-26 Applied Materials, Inc. Method for enhancing the adhesion of copper deposited by chemical vapor deposition
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Publication number Priority date Publication date Assignee Title
TWI462178B (en) * 2006-08-30 2014-11-21 Lam Res Corp Self assembled monolayer for improving adhesion between copper and barrier layer

Also Published As

Publication number Publication date
WO2005123988B1 (en) 2006-04-06
TWI292925B (en) 2008-01-21
JP2008502806A (en) 2008-01-31
EP1778896A1 (en) 2007-05-02
US20050274621A1 (en) 2005-12-15
WO2005123988A1 (en) 2005-12-29

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