TW200603171A - Flash memory with enhanced program and erase coupling and process of fabricating the same - Google Patents
Flash memory with enhanced program and erase coupling and process of fabricating the sameInfo
- Publication number
- TW200603171A TW200603171A TW094106331A TW94106331A TW200603171A TW 200603171 A TW200603171 A TW 200603171A TW 094106331 A TW094106331 A TW 094106331A TW 94106331 A TW94106331 A TW 94106331A TW 200603171 A TW200603171 A TW 200603171A
- Authority
- TW
- Taiwan
- Prior art keywords
- gates
- erase
- self
- floating
- aligned
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/802,253 US7046552B2 (en) | 2004-03-17 | 2004-03-17 | Flash memory with enhanced program and erase coupling and process of fabricating the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200603171A true TW200603171A (en) | 2006-01-16 |
| TWI362043B TWI362043B (en) | 2012-04-11 |
Family
ID=34986078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094106331A TWI362043B (en) | 2004-03-17 | 2005-03-02 | Flash memory with enhanced program and erase coupling and process of fabricating the same |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7046552B2 (zh) |
| CN (1) | CN100481463C (zh) |
| TW (1) | TWI362043B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9972631B2 (en) | 2016-08-15 | 2018-05-15 | Winbond Electronics Corp. | Memory device and method of manufacturing the same |
| TWI846312B (zh) * | 2022-04-06 | 2024-06-21 | 台灣積體電路製造股份有限公司 | 快閃記憶體及其製造方法 |
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| US7232717B1 (en) | 2002-05-28 | 2007-06-19 | O2Ic, Inc. | Method of manufacturing non-volatile DRAM |
| US7186612B2 (en) * | 2004-01-28 | 2007-03-06 | O2Ic, Inc. | Non-volatile DRAM and a method of making thereof |
| US20050219913A1 (en) * | 2004-04-06 | 2005-10-06 | O2Ic, Inc. | Non-volatile memory array |
| JP2005302850A (ja) * | 2004-04-08 | 2005-10-27 | Renesas Technology Corp | 半導体記憶装置 |
| US7315056B2 (en) | 2004-06-07 | 2008-01-01 | Silicon Storage Technology, Inc. | Semiconductor memory array of floating gate memory cells with program/erase and select gates |
| JP4773073B2 (ja) * | 2004-08-11 | 2011-09-14 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US20060193174A1 (en) * | 2005-02-25 | 2006-08-31 | O2Ic | Non-volatile and static random access memory cells sharing the same bitlines |
| TWI260073B (en) * | 2005-04-21 | 2006-08-11 | Macronix Int Co Ltd | Non-volatile memory and fabricating method thereof and operation thereof |
| US7567458B2 (en) * | 2005-09-26 | 2009-07-28 | Silicon Storage Technology, Inc. | Flash memory array having control/decode circuitry for disabling top gates of defective memory cells |
| JP2007213704A (ja) * | 2006-02-09 | 2007-08-23 | Nec Electronics Corp | 半導体記憶装置 |
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| JP5318364B2 (ja) * | 2007-01-31 | 2013-10-16 | 日本電子株式会社 | 試料保持体、試料検査装置及び試料検査方法、並びに試料保持体の製造方法 |
| US20090039410A1 (en) * | 2007-08-06 | 2009-02-12 | Xian Liu | Split Gate Non-Volatile Flash Memory Cell Having A Floating Gate, Control Gate, Select Gate And An Erase Gate With An Overhang Over The Floating Gate, Array And Method Of Manufacturing |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| US7800159B2 (en) * | 2007-10-24 | 2010-09-21 | Silicon Storage Technology, Inc. | Array of contactless non-volatile memory cells |
| US7838363B2 (en) * | 2007-10-31 | 2010-11-23 | Freescale Semiconductor, Inc. | Method of forming a split gate non-volatile memory cell |
| KR100932134B1 (ko) | 2007-12-27 | 2009-12-16 | 주식회사 동부하이텍 | 싱글 폴리형 이이피롬 및 그의 제조 방법 |
| JP5503843B2 (ja) * | 2007-12-27 | 2014-05-28 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
| US7668013B2 (en) * | 2008-02-07 | 2010-02-23 | Silicon Storage Technology, Inc. | Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratio |
| KR20100080240A (ko) * | 2008-12-31 | 2010-07-08 | 주식회사 동부하이텍 | 플래시메모리 소자 및 그 제조 방법 |
| KR101510481B1 (ko) * | 2008-12-31 | 2015-04-10 | 주식회사 동부하이텍 | 플래시 메모리 소자 및 그 제조 방법 |
| KR20100080190A (ko) * | 2008-12-31 | 2010-07-08 | 주식회사 동부하이텍 | 플래시메모리 소자 및 그 제조 방법 |
| US20100259979A1 (en) * | 2009-04-10 | 2010-10-14 | James Yingbo Jia | Self Limiting Method For Programming A Non-volatile Memory Cell To One Of A Plurality Of MLC Levels |
| CN102097384B (zh) * | 2009-12-15 | 2013-05-29 | 中芯国际集成电路制造(上海)有限公司 | 存储器件制造方法 |
| CN102637455A (zh) * | 2011-02-10 | 2012-08-15 | 上海宏力半导体制造有限公司 | 存储器阵列 |
| KR101787488B1 (ko) * | 2011-03-24 | 2017-10-19 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 이의 제조 방법 |
| US8384147B2 (en) * | 2011-04-29 | 2013-02-26 | Silicon Storage Technology, Inc. | High endurance non-volatile memory cell and array |
| US8711636B2 (en) * | 2011-05-13 | 2014-04-29 | Silicon Storage Technology, Inc. | Method of operating a split gate flash memory cell with coupling gate |
| CN102810560B (zh) * | 2011-06-01 | 2016-03-30 | 中国科学院微电子研究所 | 分裂栅存储器及其制造方法 |
| KR20130104270A (ko) * | 2012-03-13 | 2013-09-25 | 삼성전자주식회사 | 스플릿 게이트형 비휘발성 메모리 장치 및 스플릿 게이트형 비휘발성 메모리 장치가 임베디드된 반도체 장치 |
| US8878281B2 (en) * | 2012-05-23 | 2014-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for non-volatile memory cells |
| CN106449643A (zh) * | 2012-11-01 | 2017-02-22 | 北京芯盈速腾电子科技有限责任公司 | 非挥发性内存单元的制造方法 |
| US8669607B1 (en) | 2012-11-01 | 2014-03-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for non-volatile memory cells with increased programming efficiency |
| US9472284B2 (en) | 2012-11-19 | 2016-10-18 | Silicon Storage Technology, Inc. | Three-dimensional flash memory system |
| US9275748B2 (en) | 2013-03-14 | 2016-03-01 | Silicon Storage Technology, Inc. | Low leakage, low threshold voltage, split-gate flash cell operation |
| US9673194B2 (en) * | 2013-10-31 | 2017-06-06 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor arrangement and formation thereof |
| US9287282B2 (en) | 2014-01-28 | 2016-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a logic compatible flash memory |
| US9679979B2 (en) | 2014-02-13 | 2017-06-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure for flash memory cells and method of making same |
| US9679980B2 (en) * | 2014-03-13 | 2017-06-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Common source oxide formation by in-situ steam oxidation for embedded flash |
| JP6286292B2 (ja) * | 2014-06-20 | 2018-02-28 | 株式会社フローディア | 不揮発性半導体記憶装置 |
| CN105609131A (zh) * | 2014-07-22 | 2016-05-25 | 硅存储技术公司 | 抑制擦除分裂栅闪存存储器单元扇区的部分的系统和方法 |
| US9252150B1 (en) * | 2014-07-29 | 2016-02-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | High endurance non-volatile memory cell |
| US9343466B1 (en) * | 2014-12-29 | 2016-05-17 | Globalfoundries Singapore Pte. Ltd. | Methods for fabricating flash memory cells and integrated circuits having flash memory cells embedded with logic |
| TWI588992B (zh) * | 2015-01-13 | 2017-06-21 | Xinnova Tech Ltd | Non-volatile memory components and methods of making the same |
| TWI627732B (zh) * | 2015-02-06 | 2018-06-21 | 力晶科技股份有限公司 | 雙位元快閃記憶體記憶體結構及其製造方法 |
| TWI606551B (zh) * | 2015-02-16 | 2017-11-21 | Xinnova Tech Ltd | Non-volatile memory device method |
| US9917165B2 (en) * | 2015-05-15 | 2018-03-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory cell structure for improving erase speed |
| US20170125603A1 (en) * | 2015-11-03 | 2017-05-04 | Silicon Storage Technology, Inc. | Integration Of Metal Floating Gate In Non-Volatile Memory |
| US10535670B2 (en) * | 2016-02-25 | 2020-01-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Non-volatile memory having an erase gate formed between two floating gates with two word lines formed on other sides and a method for forming the same |
| CN107305892B (zh) * | 2016-04-20 | 2020-10-02 | 硅存储技术公司 | 使用两个多晶硅沉积步骤来形成三栅极非易失性闪存单元对的方法 |
| CN107342288B (zh) | 2016-04-29 | 2020-08-04 | 硅存储技术公司 | 分裂栅型双位非易失性存储器单元 |
| CN106449389B (zh) * | 2016-10-21 | 2019-09-17 | 武汉新芯集成电路制造有限公司 | 嵌入式闪存结构及其制作方法 |
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| US10714634B2 (en) * | 2017-12-05 | 2020-07-14 | Silicon Storage Technology, Inc. | Non-volatile split gate memory cells with integrated high K metal control gates and method of making same |
| KR102554249B1 (ko) * | 2018-02-02 | 2023-07-11 | 주식회사 디비하이텍 | 비휘발성 기억소자 및 그 제조방법 |
| CN109119421A (zh) * | 2018-07-11 | 2019-01-01 | 上海华虹宏力半导体制造有限公司 | 1.5t sonos闪存的工艺方法 |
| US10838652B2 (en) * | 2018-08-24 | 2020-11-17 | Silicon Storage Technology, Inc. | Programming of memory cell having gate capacitively coupled to floating gate |
| TWI694592B (zh) * | 2018-11-09 | 2020-05-21 | 物聯記憶體科技股份有限公司 | 非揮發性記憶體及其製造方法 |
| US10902921B2 (en) * | 2018-12-21 | 2021-01-26 | Texas Instruments Incorporated | Flash memory bitcell erase with source bias voltage |
| CN114335185A (zh) | 2020-09-30 | 2022-04-12 | 硅存储技术股份有限公司 | 具有设置在字线栅上方的擦除栅的分裂栅双位非易失性存储器单元及其制备方法 |
| US11545583B2 (en) | 2021-02-05 | 2023-01-03 | Semiconductor Components Industries, Llc | Process of forming an electronic device including a non-volatile memory cell |
| US12069857B2 (en) | 2021-08-23 | 2024-08-20 | Macronix International Co., Ltd. | Memory cell, memory device manufacturing method and memory device operation method thereof |
| TWI802971B (zh) * | 2021-08-23 | 2023-05-21 | 旺宏電子股份有限公司 | 記憶體晶胞，記憶體裝置之製造方法及其操作方法 |
| CN116666458A (zh) * | 2022-02-18 | 2023-08-29 | 联华电子股份有限公司 | 功率元件及其制作方法 |
| CN114743976A (zh) * | 2022-05-10 | 2022-07-12 | 北京知存科技有限公司 | 半导体器件及其制造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4357622A (en) * | 1980-01-18 | 1982-11-02 | International Business Machines Corporation | Complementary transistor structure |
| US4843023A (en) * | 1985-09-25 | 1989-06-27 | Hewlett-Packard Company | Process for forming lightly-doped-drain (LDD) without extra masking steps |
| US7071060B1 (en) * | 1996-02-28 | 2006-07-04 | Sandisk Corporation | EEPROM with split gate source side infection with sidewall spacers |
| US5386132A (en) * | 1992-11-02 | 1995-01-31 | Wong; Chun C. D. | Multimedia storage system with highly compact memory device |
| KR0144421B1 (ko) * | 1994-07-18 | 1998-07-01 | 김주용 | 플레쉬 이.이.피.롬의 제조방법 |
| JPH0883855A (ja) * | 1994-09-13 | 1996-03-26 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置およびその製造方法 |
| EP0902438B1 (en) * | 1997-09-09 | 2005-10-26 | Interuniversitair Micro-Elektronica Centrum Vzw | Methods of erasing a memory device and a method of programming a memory device for low-voltage and low-power applications |
| US6091104A (en) | 1999-03-24 | 2000-07-18 | Chen; Chiou-Feng | Flash memory cell with self-aligned gates and fabrication process |
| US6818512B1 (en) * | 2002-01-04 | 2004-11-16 | Taiwan Semiconductor Manufacturing Company | Split-gate flash with source/drain multi-sharing |
| US20040256657A1 (en) * | 2003-06-20 | 2004-12-23 | Chih-Wei Hung | [flash memory cell structure and method of manufacturing and operating the memory cell] |
| US6992929B2 (en) * | 2004-03-17 | 2006-01-31 | Actrans System Incorporation, Usa | Self-aligned split-gate NAND flash memory and fabrication process |
-
2004
- 2004-03-17 US US10/802,253 patent/US7046552B2/en not_active Expired - Lifetime
-
2005
- 2005-03-02 TW TW094106331A patent/TWI362043B/zh active
- 2005-03-17 CN CNB2005100551202A patent/CN100481463C/zh not_active Expired - Lifetime
-
2006
- 2006-04-27 US US11/380,595 patent/US7718488B2/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9972631B2 (en) | 2016-08-15 | 2018-05-15 | Winbond Electronics Corp. | Memory device and method of manufacturing the same |
| TWI846312B (zh) * | 2022-04-06 | 2024-06-21 | 台灣積體電路製造股份有限公司 | 快閃記憶體及其製造方法 |
| US12063776B2 (en) | 2022-04-06 | 2024-08-13 | Taiwan Semiconductor Manufacturing Company., Ltd. | Flash memory layout to eliminate floating gate bridge |
| US12274054B2 (en) | 2022-04-06 | 2025-04-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Flash memory layout to eliminate floating gate bridge |
Also Published As
| Publication number | Publication date |
|---|---|
| US20060203552A1 (en) | 2006-09-14 |
| CN100481463C (zh) | 2009-04-22 |
| CN1681128A (zh) | 2005-10-12 |
| US7718488B2 (en) | 2010-05-18 |
| US7046552B2 (en) | 2006-05-16 |
| TWI362043B (en) | 2012-04-11 |
| US20050207199A1 (en) | 2005-09-22 |
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