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TW200520223A - Magnetic tunnel junction and memory device including the same - Google Patents

Magnetic tunnel junction and memory device including the same

Info

Publication number
TW200520223A
TW200520223A TW093123500A TW93123500A TW200520223A TW 200520223 A TW200520223 A TW 200520223A TW 093123500 A TW093123500 A TW 093123500A TW 93123500 A TW93123500 A TW 93123500A TW 200520223 A TW200520223 A TW 200520223A
Authority
TW
Taiwan
Prior art keywords
tunnel junction
magnetic tunnel
same
memory device
device including
Prior art date
Application number
TW093123500A
Other languages
Chinese (zh)
Other versions
TWI250651B (en
Inventor
Young-Ki Ha
Jang-Eun Lee
Se-Chung Oh
Jun-Soo Bae
Hyun-Jo Kim
In-Gyu Baek
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020030055895A external-priority patent/KR100548997B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200520223A publication Critical patent/TW200520223A/en
Application granted granted Critical
Publication of TWI250651B publication Critical patent/TWI250651B/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3295—Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3204—Exchange coupling of amorphous multilayers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layers.
TW093123500A 2003-08-12 2004-08-05 Magnetic tunnel junction and memory device including the same TWI250651B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020030055895A KR100548997B1 (en) 2003-08-12 2003-08-12 Magnetic tunnel junction structures with free layer of multilayer thin film structure and magnetic ram cells
US10/851,387 US7378698B2 (en) 2003-08-12 2004-05-24 Magnetic tunnel junction and memory device including the same

Publications (2)

Publication Number Publication Date
TW200520223A true TW200520223A (en) 2005-06-16
TWI250651B TWI250651B (en) 2006-03-01

Family

ID=34622286

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093123500A TWI250651B (en) 2003-08-12 2004-08-05 Magnetic tunnel junction and memory device including the same

Country Status (3)

Country Link
CN (1) CN1591673B (en)
DE (1) DE102004039978B4 (en)
TW (1) TWI250651B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101950867B1 (en) * 2012-08-27 2019-04-26 삼성전자주식회사 Semiconductor device and method of forming the same
US8908428B2 (en) * 2013-01-29 2014-12-09 Samsung Electronics Co., Ltd. Voltage assisted STT-MRAM writing scheme
KR20170037707A (en) * 2015-09-25 2017-04-05 삼성전자주식회사 Magnetic memory device and method for manufacturing the same
CN106025063B (en) * 2016-05-19 2019-11-19 华为技术有限公司 Magnetic Tunnel Junction and Magnetic Memory
US11121174B2 (en) 2019-11-21 2021-09-14 International Business Machines Corporation MRAM integration into the MOL for fast 1T1M cells
US11087811B1 (en) 2020-05-28 2021-08-10 International Business Machines Corporation NVM synaptic element with gradual reset capability
CN113725353B (en) * 2021-09-03 2024-05-03 广东省大湾区集成电路与系统应用研究院 MTJ device, manufacturing method thereof and MRAM

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1041132A (en) * 1996-07-18 1998-02-13 Sanyo Electric Co Ltd Magnetic resistance effect film
WO2000079297A1 (en) * 1999-06-18 2000-12-28 Koninklijke Philips Electronics N.V. Method for manufacturing a magnetic sensor device
CN1372688A (en) * 2000-03-09 2002-10-02 皇家菲利浦电子有限公司 Magnetic device with a coupling layer and method of manufacturing and operation of such device
US6767655B2 (en) * 2000-08-21 2004-07-27 Matsushita Electric Industrial Co., Ltd. Magneto-resistive element
JP3618654B2 (en) * 2000-09-11 2005-02-09 株式会社東芝 Magnetoresistive element, magnetic head, and magnetic recording / reproducing apparatus
JP2002150512A (en) * 2000-11-08 2002-05-24 Sony Corp Magnetoresistive element and magnetoresistive magnetic head
JP3807254B2 (en) * 2001-05-30 2006-08-09 ソニー株式会社 Magnetoresistive effect element, magnetoresistive effect type magnetic sensor, and magnetoresistive effect type magnetic head
JP3565268B2 (en) * 2001-06-22 2004-09-15 株式会社東芝 Magnetoresistive element, magnetic head, and magnetic reproducing device
JP3590006B2 (en) * 2001-06-22 2004-11-17 株式会社東芝 Magnetoresistive element, magnetic head, and magnetic reproducing device
JP2003152239A (en) * 2001-11-12 2003-05-23 Fujitsu Ltd Magnetoresistive element, and read head and drive having the same
JP2003243631A (en) * 2002-02-18 2003-08-29 Mitsubishi Electric Corp Thin film magnetic storage device and radio chip, distribution management system and manufacturing process management system using the same

Also Published As

Publication number Publication date
DE102004039978B4 (en) 2009-08-20
TWI250651B (en) 2006-03-01
CN1591673B (en) 2011-06-22
CN1591673A (en) 2005-03-09
DE102004039978A1 (en) 2005-06-23

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees