TW200515514A - Method of fabricating under bump metallurgy structure and semiconductor wafer with solder bumps - Google Patents
Method of fabricating under bump metallurgy structure and semiconductor wafer with solder bumpsInfo
- Publication number
- TW200515514A TW200515514A TW092129231A TW92129231A TW200515514A TW 200515514 A TW200515514 A TW 200515514A TW 092129231 A TW092129231 A TW 092129231A TW 92129231 A TW92129231 A TW 92129231A TW 200515514 A TW200515514 A TW 200515514A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- solder bumps
- under bump
- bump metallurgy
- barrier layer
- Prior art date
Links
- 229910000679 solder Inorganic materials 0.000 title abstract 5
- 238000005272 metallurgy Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000004888 barrier function Effects 0.000 abstract 4
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- 239000000853 adhesive Substances 0.000 abstract 3
- 230000001070 adhesive effect Effects 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
Landscapes
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A method for fabricating Under Bump Metallurgy (UBM) and a semiconductor wafer with a plurality of solder bumps are proposed. The method includes preparing a wafer having a plurality of electrically connecting pads formed thereon; depositing an adhesive metal layer, such as aluminum layer, on each electrically connecting pad to provide metal layers coating; and stacking at least one barrier layer (e.g. Nickel layer) and at least one solder wettable layer (e.g. Copper layer) onto the adhesive metal layer, cooperating with the adhesive metal layer to form an under bump metallurgy structure for solder bumps bonding. The barrier layer and the solder wettable layer are stacked alternatively so as to increase the buffer capacity of the barrier layer to avoid bad bump soldering due to the consumption of barrier layer and to reduce stress of the UBM structure to prevent warpage of wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW092129231A TWI241658B (en) | 2003-10-22 | 2003-10-22 | Method of fabricating under bump metallurgy structure and semiconductor wafer with solder bumps |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW092129231A TWI241658B (en) | 2003-10-22 | 2003-10-22 | Method of fabricating under bump metallurgy structure and semiconductor wafer with solder bumps |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200515514A true TW200515514A (en) | 2005-05-01 |
| TWI241658B TWI241658B (en) | 2005-10-11 |
Family
ID=37014010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092129231A TWI241658B (en) | 2003-10-22 | 2003-10-22 | Method of fabricating under bump metallurgy structure and semiconductor wafer with solder bumps |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI241658B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI464929B (en) * | 2011-03-16 | 2014-12-11 | Lextar Electronics Corp | Light source module with enhanced heat dissipation efficiency and embedded package structure thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102676996A (en) * | 2011-03-17 | 2012-09-19 | 北京广微积电科技有限公司 | Metallization method for silicon chip |
-
2003
- 2003-10-22 TW TW092129231A patent/TWI241658B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI464929B (en) * | 2011-03-16 | 2014-12-11 | Lextar Electronics Corp | Light source module with enhanced heat dissipation efficiency and embedded package structure thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI241658B (en) | 2005-10-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |