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TW200506531A - Photoresist composition for deep uv and process thereof - Google Patents

Photoresist composition for deep uv and process thereof

Info

Publication number
TW200506531A
TW200506531A TW093112335A TW93112335A TW200506531A TW 200506531 A TW200506531 A TW 200506531A TW 093112335 A TW093112335 A TW 093112335A TW 93112335 A TW93112335 A TW 93112335A TW 200506531 A TW200506531 A TW 200506531A
Authority
TW
Taiwan
Prior art keywords
solvent
photoresist composition
photoresist
mixture
pendant
Prior art date
Application number
TW093112335A
Other languages
Chinese (zh)
Inventor
Sang-Ho Lee
M Dalil Rahman
Douglas Mckenzie
Woo-Kyu Kim
Munirathna Padmanaban
Joseph E Oberlander
Medhat A Toukhy
Original Assignee
Clariant Int Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Int Ltd filed Critical Clariant Int Ltd
Publication of TW200506531A publication Critical patent/TW200506531A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

The present invention relates to a novel photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-300 nm, and a process for using it. The photoresist composition comprises (a) a polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and further where the polymer comprises at least one alicyclic hydrocarbon unit, at least one cyclic anhydride, at least one acrylate unit with the structure 1, and at least one acrylate unit with structure 2: , where, R and R' are independently H or (C1-C4)alkyl; R1 is a pendant cyclic lactone, and, R2 is a pendant nonlactone aliphatic hydrocarbon moiety, (b) a compound or a mixture of compounds capable of producing acid upon irradiation. The invention further relates to the use of a solvent comprising valerolactone as a solvent for photosensitive materials. Preferably, the solvent is gamma valerolactone. The solvent may be in a mixture with another photoresist solvent or solvents.
TW093112335A 2003-05-16 2004-04-30 Photoresist composition for deep uv and process thereof TW200506531A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44054203A 2003-05-16 2003-05-16

Publications (1)

Publication Number Publication Date
TW200506531A true TW200506531A (en) 2005-02-16

Family

ID=33449802

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093112335A TW200506531A (en) 2003-05-16 2004-04-30 Photoresist composition for deep uv and process thereof

Country Status (6)

Country Link
EP (1) EP1631863A2 (en)
JP (1) JP2007505362A (en)
KR (1) KR20060020628A (en)
CN (1) CN1791838A (en)
TW (1) TW200506531A (en)
WO (1) WO2004102272A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4857208B2 (en) * 2006-11-10 2012-01-18 信越化学工業株式会社 Pattern forming method using resist material
KR101977886B1 (en) * 2018-06-18 2019-05-13 영창케미칼 주식회사 Chemical amplified type positive photoresist composition for pattern profile improvement
CN111302959A (en) * 2020-02-28 2020-06-19 宁波南大光电材料有限公司 Acid diffusion inhibitor with ester bond, preparation method thereof and photoresist composition
CN114085311B (en) * 2021-12-30 2023-03-14 宁波南大光电材料有限公司 Method for preparing high-purity photoresist resin
CN117756987B (en) * 2023-12-27 2025-01-24 福建泓光半导体材料有限公司 Acrylate photoresist film-forming resin and ArF photoresist and preparation method and application thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1143299B1 (en) * 2000-04-04 2003-07-16 Sumitomo Chemical Company, Limited Chemically amplified positive resist composition
US6949329B2 (en) * 2001-06-22 2005-09-27 Matsushita Electric Industrial Co., Ltd. Pattern formation method

Also Published As

Publication number Publication date
KR20060020628A (en) 2006-03-06
WO2004102272A3 (en) 2005-02-10
CN1791838A (en) 2006-06-21
EP1631863A2 (en) 2006-03-08
WO2004102272A2 (en) 2004-11-25
JP2007505362A (en) 2007-03-08

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