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TW200505310A - Silver alloy material, circuit substrate, electronic device, and method for manufacturing circuit substrate - Google Patents

Silver alloy material, circuit substrate, electronic device, and method for manufacturing circuit substrate

Info

Publication number
TW200505310A
TW200505310A TW093121925A TW93121925A TW200505310A TW 200505310 A TW200505310 A TW 200505310A TW 093121925 A TW093121925 A TW 093121925A TW 93121925 A TW93121925 A TW 93121925A TW 200505310 A TW200505310 A TW 200505310A
Authority
TW
Taiwan
Prior art keywords
circuit substrate
alloy material
silver alloy
silver
indium
Prior art date
Application number
TW093121925A
Other languages
Chinese (zh)
Other versions
TWI319776B (en
Inventor
Yuhichi Saitoh
Akiyoshi Fujii
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2004185228A external-priority patent/JP4421394B2/en
Priority claimed from JP2004185264A external-priority patent/JP4498835B2/en
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200505310A publication Critical patent/TW200505310A/en
Application granted granted Critical
Publication of TWI319776B publication Critical patent/TWI319776B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0388—Other aspects of conductors
    • H05K2201/0391—Using different types of conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01—Tools for processing; Objects used during processing
    • H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
    • H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
    • H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

A circuit substrate of the present invention uses as component materials for gate lines and gate electrodes, silver alloy material containing silver as a main component, and at least one element selected from the group consisting of tin, zinc, lead, bismuth, indium, and gallium. It is especially preferable that the silver alloy material mainly consisting of silver and containing indium is used for the gate lines and the gate electrodes. With this, it is possible to provide silver alloy material whose resistance value, adhesion, plasma resistance, and reflection characteristics can be appropriately adjusted by the adjustment of the content of indium. Further, it is also possible to apply the alloy in accordance with the characteristic required for each part of the circuit substrate.
TW093121925A 2003-07-23 2004-07-22 Silver alloy material, circuit substrate, electronic device, and method for manufacturing circuit substrate TWI319776B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003200815 2003-07-23
JP2003200806 2003-07-23
JP2004185228A JP4421394B2 (en) 2003-07-23 2004-06-23 Silver alloy material, circuit board, electronic device, and method of manufacturing circuit board
JP2004185264A JP4498835B2 (en) 2003-07-23 2004-06-23 Circuit board, manufacturing method thereof, and electronic device

Publications (2)

Publication Number Publication Date
TW200505310A true TW200505310A (en) 2005-02-01
TWI319776B TWI319776B (en) 2010-01-21

Family

ID=34084641

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093121925A TWI319776B (en) 2003-07-23 2004-07-22 Silver alloy material, circuit substrate, electronic device, and method for manufacturing circuit substrate

Country Status (4)

Country Link
US (1) US20050019203A1 (en)
KR (2) KR100677805B1 (en)
CN (1) CN100339914C (en)
TW (1) TWI319776B (en)

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US8553517B2 (en) 2002-10-14 2013-10-08 Samsung Electronics Co., Ltd. Magnetic medium using spin-polarized electrons and apparatus and method of recording data on the magnetic medium
KR20070019458A (en) * 2005-08-12 2007-02-15 삼성전자주식회사 Wiring, its formation method, thin film transistor substrate and its manufacturing method
US7872022B2 (en) * 2006-04-03 2011-01-18 Hoffmann-La Roche Inc. Serotonin transporter (SERT) inhibitors for the treatment of depression and anxiety
JP5257965B2 (en) * 2006-04-25 2013-08-07 独立行政法人物質・材料研究機構 Method for producing alloy fine particle colloid
WO2009032984A1 (en) * 2007-09-07 2009-03-12 E. I. Du Pont De Nemours And Company Multi-element alloy powder containing silver and at least two non-silver containing elements
JP4636128B2 (en) * 2008-06-24 2011-02-23 ソニー株式会社 Input device and display device with input function
JP2010225572A (en) * 2008-11-10 2010-10-07 Kobe Steel Ltd Reflective anode electrode and wiring film for organic EL display
US9984787B2 (en) 2009-11-11 2018-05-29 Samsung Electronics Co., Ltd. Conductive paste and solar cell
KR101741683B1 (en) 2010-08-05 2017-05-31 삼성전자주식회사 Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
US8668847B2 (en) 2010-08-13 2014-03-11 Samsung Electronics Co., Ltd. Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
US8987586B2 (en) 2010-08-13 2015-03-24 Samsung Electronics Co., Ltd. Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
US8974703B2 (en) 2010-10-27 2015-03-10 Samsung Electronics Co., Ltd. Conductive paste and electronic device and solar cell including an electrode formed using the same
US8652860B2 (en) 2011-01-09 2014-02-18 Bridgelux, Inc. Packaging photon building blocks having only top side connections in a molded interconnect structure
US9461023B2 (en) * 2011-10-28 2016-10-04 Bridgelux, Inc. Jetting a highly reflective layer onto an LED assembly
US9105370B2 (en) 2011-01-12 2015-08-11 Samsung Electronics Co., Ltd. Conductive paste, and electronic device and solar cell including an electrode formed using the same
US8940195B2 (en) 2011-01-13 2015-01-27 Samsung Electronics Co., Ltd. Conductive paste, and electronic device and solar cell including an electrode formed using the same
SE536911C2 (en) * 2011-02-09 2014-10-28 Impact Coatings Ab Material for providing an electrically conductive contact layer, a contact element with such layer, method for providing the contact element, and use of the material
EP2800146A1 (en) * 2013-05-03 2014-11-05 Saint-Gobain Glass France Back contact substrate for a photovoltaic cell or module
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CN104419844A (en) * 2013-08-23 2015-03-18 光洋应用材料科技股份有限公司 Silver alloy material
US9773989B2 (en) * 2013-12-03 2017-09-26 National University Corporation Yamagata University Method for producing metal thin film and conductive structure
JP5850077B2 (en) * 2014-04-09 2016-02-03 三菱マテリアル株式会社 Ag alloy film and sputtering target for forming Ag alloy film
EP3168325B1 (en) 2015-11-10 2022-01-05 Materion Advanced Materials Germany GmbH Silver alloy based sputter target
US10504999B2 (en) * 2018-03-15 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Forming semiconductor structures with semimetal features
JP7062528B2 (en) * 2018-06-14 2022-05-06 株式会社ジャパンディスプレイ Semiconductor device

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Also Published As

Publication number Publication date
KR100960181B1 (en) 2010-05-26
KR100677805B1 (en) 2007-02-02
TWI319776B (en) 2010-01-21
CN100339914C (en) 2007-09-26
US20050019203A1 (en) 2005-01-27
CN1577637A (en) 2005-02-09
KR20050012154A (en) 2005-01-31
KR20060041198A (en) 2006-05-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees