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TW200501255A - Method for removal of residue from a substrate - Google Patents

Method for removal of residue from a substrate

Info

Publication number
TW200501255A
TW200501255A TW093114873A TW93114873A TW200501255A TW 200501255 A TW200501255 A TW 200501255A TW 093114873 A TW093114873 A TW 093114873A TW 93114873 A TW93114873 A TW 93114873A TW 200501255 A TW200501255 A TW 200501255A
Authority
TW
Taiwan
Prior art keywords
substrate
residue
removal
hydrogen
based plasma
Prior art date
Application number
TW093114873A
Other languages
Chinese (zh)
Inventor
Ying Rui
Chun Yan
guo-wen Ding
Suzanne Arias
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200501255A publication Critical patent/TW200501255A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47G—HOUSEHOLD OR TABLE EQUIPMENT
    • A47G21/00—Table-ware
    • A47G21/14—Knife racks or stands; Holders for table utensils attachable to plates
    • A—HUMAN NECESSITIES
    • A45—HAND OR TRAVELLING ARTICLES
    • A45C—PURSES; LUGGAGE; HAND CARRIED BAGS
    • A45C11/00—Receptacles for purposes not provided for in groups A45C1/00-A45C9/00
    • A45C11/20—Lunch or picnic boxes or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47G—HOUSEHOLD OR TABLE EQUIPMENT
    • A47G2400/00—Details not otherwise provided for in A47G19/00-A47G23/16
    • A47G2400/02—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A method for removing residues from a substrate. The residue is removed by exposing the substrate to a hydrogen-based plasma. After the substrate is exposed to the hydrogen-based plasma, the substrate may optionally be immersed in an aqueous solution including hydrogen fluoride.
TW093114873A 2003-05-27 2004-05-26 Method for removal of residue from a substrate TW200501255A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/446,332 US20040237997A1 (en) 2003-05-27 2003-05-27 Method for removal of residue from a substrate

Publications (1)

Publication Number Publication Date
TW200501255A true TW200501255A (en) 2005-01-01

Family

ID=33451019

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093114873A TW200501255A (en) 2003-05-27 2004-05-26 Method for removal of residue from a substrate

Country Status (4)

Country Link
US (1) US20040237997A1 (en)
KR (1) KR20040102337A (en)
CN (1) CN1574203A (en)
TW (1) TW200501255A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7134941B2 (en) * 2002-07-29 2006-11-14 Nanoclean Technologies, Inc. Methods for residue removal and corrosion prevention in a post-metal etch process
US8101025B2 (en) * 2003-05-27 2012-01-24 Applied Materials, Inc. Method for controlling corrosion of a substrate
JP2005260060A (en) * 2004-03-12 2005-09-22 Semiconductor Leading Edge Technologies Inc Resist removing apparatus and resist removing method, and semiconductor device manufactured by using the method
JP2005268312A (en) * 2004-03-16 2005-09-29 Semiconductor Leading Edge Technologies Inc Resist removing method and semiconductor device manufactured using same
US20060032833A1 (en) * 2004-08-10 2006-02-16 Applied Materials, Inc. Encapsulation of post-etch halogenic residue
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US8435895B2 (en) * 2007-04-04 2013-05-07 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
US20090120901A1 (en) * 2007-11-09 2009-05-14 Pixeloptics Inc. Patterned electrodes with reduced residue
US20090293907A1 (en) * 2008-05-28 2009-12-03 Nancy Fung Method of substrate polymer removal
US20110143548A1 (en) 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
CN102652351B (en) 2009-12-11 2016-10-05 诺发系统有限公司 The enhanced passivation technology of protection silicon before high dose is implanted and divested
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
US10217627B2 (en) * 2013-10-03 2019-02-26 Applied Materials, Inc. Methods of non-destructive post tungsten etch residue removal
CN103646872A (en) * 2013-11-26 2014-03-19 上海华力微电子有限公司 Photoresist removing apparatus
KR101870491B1 (en) * 2014-03-11 2018-06-22 도쿄엘렉트론가부시키가이샤 Plasma processing appratus, substrate processing system, fabrication method of thin film transistor, and storage medium
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
US9653507B2 (en) * 2014-06-25 2017-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Deep trench isolation shrinkage method for enhanced device performance
JP6902941B2 (en) * 2017-06-29 2021-07-14 東京エレクトロン株式会社 Plasma processing method and plasma processing equipment
US10622221B2 (en) * 2017-12-14 2020-04-14 Applied Materials, Inc. Methods of etching metal oxides with less etch residue
US11094511B2 (en) 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
CN114388360A (en) * 2022-01-12 2022-04-22 澳芯集成电路技术(广东)有限公司 A kind of aluminum liner etching polymer removal method
CN118919454A (en) * 2024-10-10 2024-11-08 润芯感知科技(南昌)有限公司 Semiconductor processing method and semiconductor device

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US3917710A (en) * 1974-05-23 1975-11-04 Eastman Kodak Co Preparation of phytone via the addition of dimethylketene to 4,8-dimethyl-12-oxotridecanal
US5360995A (en) * 1993-09-14 1994-11-01 Texas Instruments Incorporated Buffered capped interconnect for a semiconductor device
US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates
JP3328416B2 (en) * 1994-03-18 2002-09-24 富士通株式会社 Semiconductor device manufacturing method and manufacturing apparatus
DE19654642C2 (en) * 1996-12-28 2003-01-16 Chemetall Gmbh Process for treating metallic surfaces with an aqueous solution
JPH10321610A (en) * 1997-03-19 1998-12-04 Fujitsu Ltd Method for manufacturing semiconductor device
JPH10326771A (en) * 1997-05-23 1998-12-08 Fujitsu Ltd Hydrogen plasma downstream processing apparatus and hydrogen plasma downstream processing method
US5913336A (en) * 1997-07-17 1999-06-22 Ingram; Thomas L. Gasoline dispensing hose
US6599829B2 (en) * 1998-11-25 2003-07-29 Texas Instruments Incorporated Method for photoresist strip, sidewall polymer removal and passivation for aluminum metallization
US6276997B1 (en) * 1998-12-23 2001-08-21 Shinhwa Li Use of chemical mechanical polishing and/or poly-vinyl-acetate scrubbing to restore quality of used semiconductor wafers
US6153530A (en) * 1999-03-16 2000-11-28 Applied Materials, Inc. Post-etch treatment of plasma-etched feature surfaces to prevent corrosion
US6440864B1 (en) * 2000-06-30 2002-08-27 Applied Materials Inc. Substrate cleaning process
US6777380B2 (en) * 2000-07-10 2004-08-17 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US6796314B1 (en) * 2001-09-07 2004-09-28 Novellus Systems, Inc. Using hydrogen gas in a post-etch radio frequency-plasma contact cleaning process
US7320942B2 (en) * 2002-05-21 2008-01-22 Applied Materials, Inc. Method for removal of metallic residue after plasma etching of a metal layer
US20040018715A1 (en) * 2002-07-25 2004-01-29 Applied Materials, Inc. Method of cleaning a surface of a material layer

Also Published As

Publication number Publication date
CN1574203A (en) 2005-02-02
US20040237997A1 (en) 2004-12-02
KR20040102337A (en) 2004-12-04

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