TW200428662A - Photo spacer manufacturing method - Google Patents

Abstract

A photo spacer manufacturing method is introduced. First, provide a glass substrate. Form TFT, data lines and scan lines on the glass substrate. Data lines intersect the scan lines in the x-over area. The TFT has a source and a drain. Form PR layer on the TFT, data lines, scan lines and x-over area. Use a half-tone mask to pattern the PR layer for simultaneously making photo spacer, insulated layer and contact holes. The insulated layer is formed on the TFT, data lines, scan lines and x-over area. The photo spacer is formed on the insulated layer corresponding to data lines, scan lines and x-over area. The contact holes are formed in the insulated layer to expose the said source or drain.

Description

200428662

V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method for manufacturing a photo spacer, and more particularly to a patterned photoresist layer using a half-tone (ha 1 f-tone) photomask. A method of simultaneously forming a photo spacer, an insulating layer, and a contact hole or a photo spacer and a black matrix. [Previous Technology] Liquid crystal displays (LCDs) are becoming more and more widely used due to their advantages of low radiation and small size. Thin film transistor (TFT) LCDs are popular among high-end electronic products because of their south-centrality and wide viewing angle. A traditional TFT LCD is composed of an upper panel and a lower panel. The upper panel includes at least a common electrode, a plurality of color filters (color fi 1 ter, CF) and a plurality of black matrices (black matrix, BM). The panel includes at least a glass substrate, a plurality of scan lines, a plurality of data lines, a plurality of storage capacitors, a plurality of TFTs, and a plurality of day electrodes. Among them, a color light-shielding sheet and a black matrix can also be formed in the lower panel. There must be multiple spacers between the upper and lower panels of the TFT LCD, such as photo spacers, to support the upper and lower panels and adjust the thickness of the liquid crystal layer in the TFT LCD. Generally, the spacers can be separately manufactured in a TFT LCD process with an ultra high aperture (UHA), and can form a color filter in the array.

200428662 V. Description of the invention (2) The TFT LCD process in the color filter on array (COA) and the TFT LCD process that can form a black matrix are completed. The drawings are described below. Please refer to FIGS. 1A to 1E, which are flow cross-sectional views showing a method for manufacturing a photo spacer in a conventional TFT LCD process with a high aperture ratio. In FIG. 1A, first, a glass substrate 102 is provided. Next, a thin film transistor 104, a storage capacitor 106, a pad 108, a data line 109, and a scan line 107 are formed on the glass substrate 102, and the data line 109 and the scan line 107 are in a staggered area. (X — over) 110. Among them, the thin film transistor 104 has a gate 105, a first end 113a & a second end 113b. When the first terminal 11 3a is the source, the second terminal 13b is the drain; when the first terminal 3a is the drain, the second terminal 11 3b is the source. In the circuit design of the TFT LCD, the scanning line 107 is electrically connected to the gate 105, and the data line 109 is electrically connected to the second terminal U3b. Then, a passivation layer 111 is formed on the thin film transistor 104, the storage capacitor 106, the pad 108, and the lean material; the line 109, the scan line 107, and the staggered area 110. At this time, the protective layer 111 is the first end 3a of the storm road part and the pads 08a of the part. Next, the organic material positive photoresist layer 11 2 is formed, and the organic material positive photoresist layer 11 2 covers the crystal, the storage capacitor 106, the pad 108, the scan line 107, the data line 109, and the staggered area. Moxibustion, using a mask 114 to pattern an organic substance, Zhengguang said that U forms an insulating layer 116 on the protective layer, as shown in FIG. 1B. Among them, the insulation 1 β continued 116 has contact holes 118 a and 118 b, and the contact holes 11 8 a and 11 8 b are used for the first and second ends 11 3a of the storm section and the pads 1 08,

200428662 V. Description of the invention (3) It is beneficial for the thin film transistor 104 and the pad 108 to be electrically connected to the pixel electrodes and peripheral circuits formed in subsequent processes, respectively. Next, a day electrode 111 is formed on the insulating layer 116, as shown in FIG. 1C. In FIG. 1C, the pixel electrode 117 has a notch 119, and the notch 11 9 is the insulating layer 116 of the exposed portion, and the position of the notch 11 9 is located corresponding to the scanning line 107, the data line 107, and the stagger The insulating layer 丨 6 of the region 11 〇. Then, an organic material negative photoresist layer 12 is formed on the insulating layer 116 in the day electrode 1 1 7 and the notch 119, as shown in FIG. 1D. Then, the photomask 122 is used to pattern the organic material negative photoresist layer 120 to form a photo spacer 124 on the insulating layer 11 6 corresponding to the scanning line 107, the data line 10, and the staggered area 1 110, such as As shown in 1E, the method is finally ended. Among these methods, the day element electrode 117 and the photo spacer 124 are sequentially formed, and the material of the photo spacer 24 and the material of the insulating layer 116 are different. Please refer to FIGS. 2A to 2E, which are process cross-sectional views of a conventional method for manufacturing a photo spacer in a TFT LCD process that can form a color filter on an array. In FIG. 2A, first, a glass substrate 201 is provided, and thin film transistors 202a, 202b, and 202c are formed, a plurality of scanning lines (not shown in FIGS. 2A to 2E), and a plurality of data lines (not shown) 2A to 2E) on the glass substrate 201. The thin film transistors 202a, 202b, and 202c each have a gate 205, a first end 213a, and a second end 213b. When the first terminal 213a is a source, the second terminal 213b is a drain; when the first terminal 2i3a is a drain, the second terminal 213b is a source. In the circuit design of the TFT LCD, the thin film transistors 20 2 a, 2 2 b, and 2 2 c are electrically connected to the corresponding scanning lines, and the thin film transistors 202 a, 202 b, and 202 c are electrically connected. Second end

200428662 V. Description of the invention (4) -------- 21 3b is electrically connected to the corresponding data line. Then, color filters 20 4 and 206 are formed on the thin film transistors 20a and 202b, the corresponding scan lines and data lines, respectively, and the color filters 20 04 and 20 6 are adjacent to each other. At this time, the color filters 204 and 2006 have contact holes 218a and 21 讣, respectively, and the contact holes 218a and 218b are used to expose the first end of the thin film transistor 202 and the first of the thin film transistor 202b, respectively. The terminal 213a is convenient for the thin film transistors 20 and 20 2b to be electrically connected to corresponding pixel electrodes formed in subsequent processes. Next, a color negative photoresist layer 208 is formed on the thin film transistor 202c, the color filters 204 and 206, and the corresponding scan lines and data lines. After that, the color negative photoresist layer 208 was patterned using a photomask 210 to form a color light-reducing sheet 209 on the thin film transistor 202c, the corresponding scanning line and data line, and the color filters 209 and 20. 6 are adjacent, as shown in Figure 2β. Among them, the color phosphor film 209 has a contact hole 218c, and the contact hole 218c is used to expose the first end 213a of the thin film transistor 202c, so that the thin film transistor 20 ° is electrically connected to the pixel electrode formed in the subsequent process. . Then, the pixel electrodes 217a, 217b, and 21 are formed on the color filters + 204, 206, and 209, respectively. The pixel electrodes 2i7a, 2i7b, and 217c are electrically connected to the thin film through the contact holes 218a, 21 8b, and 218c, respectively. The first ends 213a of the crystals 202a, 202b, and 202c are electrically connected, as shown in FIG. 2C. In the second (: picture), the day electrode 217a, 217b, and 217c are separated from each other, and there is a gap 219 between the pixel electrodes 21 7b and 217c. The gap 219 is used to expose the color filters 20 6 and 2 09. Junction. Next, the junctions of the color filters 206 and 209 in the pixel electrodes 21 7a, 217b, and 217c, and the notches 219 are formed by forming a negative photoresist layer 214 of an organic substance.

Page 8 200428662

As shown in Figure 2D. Then, a photomask 212 is used to pattern the organic material negative photoresist layer 214 to form a photo spacer 224 on the boundary between the color filter 206 and the color filter 209, as shown in FIG. 2E. The method ends. The method is to form the pixel electrodes 21h, 217k, and 217c photo spacers 2 2 4 in sequence, and the material of the photo spacers 2 2 4 is different from that of the color filter 209. Referring to FIGS. 3A to 3D, it shows a flow cross-sectional view of a manufacturing method of a photo spacer in a conventional TFT LCD process capable of forming a black matrix. In FIG. 3A, first, a glass substrate 301 is provided, and several thin-film transistors (not shown in FIGS. 3A to 3B) and a plurality of scanning lines (not shown in FIGS. 3A to 3B) are formed. ), Data lines 302a, 30b, and 30c, and pixel electrodes 304a and 304b on the glass substrate 301. On the TFT LCD circuit meter, the data lines 302a, 30 2b, and 302c are electrically connected to one end of the corresponding thin-film transistor, and the gates of these thin-film transistors are connected to the corresponding scan-line electric circuit I12. 3004a and 3004b are electrically connected to the other end of the corresponding thin film transistor. In the design of the TFT LCD circuit, when one end of the thin film transistor is a source, the other end of the thin film transistor is a drain; when one end of the thin film transistor is a drain, the other end of the thin film transistor is a source. The pixel electrode 3 0 4 a is located between the data lines 3 0 2 a and 30 2 b, and the pixel electrode 3 0 4 b is located between the data lines 302 b and 30 2c. Next, a black negative photoresist layer TW0968F (AUO) is formed. Ptd Page 9 1 0 6 thin film transistor, scan line, data line 3 〇 2 a, 3 〇 2 b and 3 0 2 c, 2 pixel electrode 304a and 304b. Then, the black negative photoresist layer 306 is patterned using the photomask 312 to form black matrices 308a, 308b, and 308c, respectively, corresponding to the thin film transistor, corresponding scanning lines, and data lines 3 002 a, 3 002 b, and 200428662. 5. Description of the invention (6) 3 0 2c, as shown in Figure 3B. Among them, there are openings 307a between the black matrixes 308a and 3081), and there are openings 307b between the black matrices 308b and 308c, and the openings 307a and 307b are used to expose the pixel electrodes 304a and 308a, respectively. 304b. Next, an organic material negative photoresist layer 31 is formed on the black matrixes 308a, 308b, and 308c, and the pixel electrodes 304a and 304b, as shown in FIG. 3C. Then, using the photomask 314 to pattern the organic material negative photoresist layer 310 to form a photo-spacer 3 2 4 on the black matrix 3 0 8 b 'as shown in FIG. 3D, the method ends. Among them, the openings 307a and 307b still expose the day electrode 304a and 304b, respectively. Among them, the material of the photo spacer 324 is different from that of the black matrix 308b. As the above two or two TFT LCD manufacturing methods must use three photomasks to complete the contact holes' pixel electrodes and photo spacers, and the last TFT LCD manufacturing method must use two photomask processes to complete the black matrix. And photo spacers, making the overall process steps quite cumbersome, resulting in a long process time. In addition, the photoresist consumption in the three TFT LCD manufacturing methods is relatively increased, increasing the production cost, which is quite uneconomical. [Summary of the Invention] In view of this, the purpose of the present invention is to provide a method for manufacturing a photo spacer, which uses a half-tone mask to pattern a photoresist layer to form a photo spacer, an insulating layer, and a contact hole. Or photo spacers and black matrix can reduce the process steps and photoresistance consumption of TFT LCD, which is quite suitable.

TW0968R AUO) .ptd Page 10 200428662 V. Description of the invention (7) Economic benefits. According to the object of the present invention, a light is proposed. First, a glass substrate is provided. Next, a thin scanning line is formed on the glass substrate, and the data line and the scanning thin film transistor have a source and a drain. However, the photoresist layer is patterned by the film transistor, the material line, the scan line, and the interlaced area mask to form a light hole. The insulating layer is formed on the thin film transistor and the region, and the photo-spacer is formed on the insulating layer corresponding to the region. The contact hole is formed on the insulating electrode or the non-polar electrode. According to still another method of the present invention, first, a film transistor of a glass substrate transistor, a first scanning line, and a first data line spacer are provided after the trace lines are overlapped and formed. Next, in the spacer, the insulation line and the scanning line, and the scanning layer, a Λ body, a second scanning line, and a second second thin film transistor are provided with a source color filter on the first thin film transistor. And form a color photoresist transistor, a second scanning line and a second mode mask patterned color photoresist layer color filter, a first contact hole two thin film transistor, and a second scanning line color filter Adjacency. At the junction of the photo-spacer two color filters, the manufacturing method ', the data line and the staggered area, the photoresist layer is thin, using half the edge layer and the contact trace and staggered trace and stagger to expose this source. Next, at least a first thin film and a second thin film crystal data line are formed on the glass substrate. Among them, and a drain. Then, a first body, a first scanning line, and a data line are formed on the first color filter and the second thin-film data line. Next, half is used to form a photo spacer and a second. The first shirt color filter is formed on the first and second data lines, and the first system is formed on the first color filter and the first contact hole is formed on the second color.

200428662 V. Description of the invention (8) In the filter, according to the method of the present invention, firstly, a body, a scanning line, a data line system and a pixel pixel transistor, and a half-scan mask black matrix and black line are provided. In order to make the present invention understandable, the light interval is specifically described below. This is another example of the above-mentioned preferred real-world source electrode or the drain target board of another broken glass-based data electrode, the adjacent black matrix system, and the structure of the system. Connect and connect. However, the material line and the color photoresist are formed on the black object, and an embodiment is proposed, and a light interval is formed less than a glass electrode and a black electrode. After the pixel is electrically charged, the day-to-day electrical layer is formed with the characteristics of a thin-film electrical color matrix and a complex thin-film transistor substrate, and the photoresist layer is then thinly formed into a photo spacer and a crystal. Sweep on. The advantages and advantages of the drawings are that the drawing and data are more obvious and easy to explain. [Embodiment] The present invention provides a method for manufacturing a photo spacer (ph0tospacer), which uses half-tone. The photomask patterning the photoresist layer to form a photo spacer, an insulating layer and a contact hole or a photo spacer and a black matrix can reduce the process steps and photoresist consumption of a TFT LCD, which is quite economical. As for the manufacturing method of the optical spacer of the present invention, it will be described below with reference to the drawings of the first embodiment, the second embodiment, and the third embodiment. Example one

凊 Referring to FIGS. 4A to 4C, which shows a TFT LCD with an ultra high aperture (UHA) according to the first embodiment of the present invention

Page 12 200428662 V. Description of the invention (9) Process sectional view of the manufacturing method of the optical spacer in the manufacturing process. In Fig. 4A, a glass substrate 402 is provided "first", and a thin film transistor 404, a storage capacitor 406, a pad 408, and a data line are provided. line 409 and scan line 407 are on the glass substrate 402, and the data line 409 and the scan line 407 overlap up and down in the X-over 410. Among them, the thin film transistor 404 has a gate 405, a first terminal 413a, and a second terminal 413b. When the first terminal 413a is a source, the second terminal 413b is a drain; when the first terminal 4 13a is non-polar, the second terminal 4 13b is a source. In the circuit design of the TFT LCD, it is known that the drawing line 407 is electrically connected to the gate 405 of the thin film transistor 404, and the data line 409 is electrically connected to the second terminal 4 13b of the thin film transistor 404. connection. Then, a passivation layer 411 is formed on the thin film transistor 404, the storage capacitor 406, the pad 408, the scan line 407, the data line 409, and the staggered area 4 10. At this time, the protective layer 41 is the first end 413a and the pad 408 of the exposed portion. Next, a photoresist layer 412 is formed on the protective layer 411. The photoresist layer 412 may be an organic material photoresist layer, and the photoresist layer 412 may be a positive photoresist layer or a negative photoresist layer. This embodiment The photoresist layer 4 1 2 is described by taking a positive photoresist layer as an example. Then, the photoresist layer 4 1 2 ′ is patterned using the half-tone optical single 414 to form a photo spacer 4 2 4, an insulating layer 4 1 6, and contact holes 41 8 a and 418b, as shown in FIG. 4B. The insulating layer 416 is formed on the protective layer 41 1 'and the photo spacer 4 1 2 is formed on the insulating layer 416 corresponding to the scanning line 407, the data line 409, and the staggered region 410. The contact holes 41 8a and 41 8b are formed in

TW0968F (Youda) .ptd Page 13 200428662 V. Description of the Invention (ίο) The insulating layer 416 is used to expose the first end 413a and the pad 4 0, respectively, in order to facilitate the thin film transistor 4 0 4 and the connection 4 0 8Electrically connected with the book electrode and peripheral circuit completed by subsequent processes. Among them, the insulating layer 416 is an organic layer. It should be noted that 'this method can also omit the process steps of the protective layer 4 丨 1, and directly form a photoresist layer 412 on the thin film transistor 404, the storage capacitor 406, the pad 408, the scan line 407, the data line 409, and the staggered area. Above 410. Next, the photoresist layer 4 1 2 is patterned using a half-tone mask 4 1 4 to form a photo spacer 424, an insulating layer 416, and contact holes 418a and 418b. The insulating layer 416 is formed on the thin film transistor 404, the storage capacitor 406, the connection 408, the scan line 407, the data line 409, and the staggered area 410, and the contact holes 41 8a and 41 8b are formed on the insulating layer. 41 6 in. After the insulating layer 412 is formed, a day electrode 417 is formed on the insulating layer 416 next to the photo spacer 424. As shown in FIG. 4C, the method ends. It should be noted that the present invention sequentially forms a photo spacer 424 and a pixel electrode 417, and the material of the photo spacer 424 is the same as that of the insulating layer 416. When the photoresist layer 412 in FIG. 4A is a positive photoresist layer, the positions of the opaque region 414a, the semitransparent region 41 4b, and the opening region 41 4c in the half-tone mask 414 correspond to the photo spacers 424, Positions of the insulating layer 416 and the contact holes 418a and 41 8b. Conversely, when the photoresist layer 412 is a negative photoresist layer, the positions of the open area, the semi-transparent area, and the opaque area in the other half-tone mask will correspond to the photo spacers 424, the insulating layer 416, and Positions of the contact holes 4 18a and 41 8b In addition, the photoresist layer 412 of FIG. 4A is on the surface of the first end 413a.

IEH IIH TW0968F (Youda) .ptd Page 14 200428662 V. Description of the invention (11) The predetermined thickness is greater than or equal to the height difference between the top of the optical spacer 424 and the surface of the first end 413a in Figure 4B. Embodiment 2 Please refer to FIGS. 5A to 5C, which are shown in a TFT LCD process in which a color filter can be formed on an array (co 1 〇rfi 11er 〇n array, COA) according to Embodiment 2 of the present invention. Process flow cross-sectional view of the manufacturing method of the photo spacer. In FIG. 5A, first, a glass substrate 5 (Π, and a thin film transistor 5 0 2 a, 5 0 2 b, and 5 0 2 c are formed, and several scanning lines (not shown in FIGS. 5A to 5C) are provided. ) And several data lines (not shown in the fifth to fifth [pictured]) on the glass substrate 501. The thin film transistors 502a, 502b & 502c each have a gate 505 and a first end 513a And a second terminal 513b. When the first terminal 513a is a source, the second terminal 513b is a drain; when the first terminal 513a is non-polar, the first terminal 513b is a source. In the circuit design of the TFT LCD The gate electrodes 505 of the thin film transistors 502a, 50 2b, and 502c are electrically connected to the first scanning line, the first scanning line, and the second scanning line, respectively, and the thin film transistors 5 0 2a, 50 2b, and 50 2c The second end 5 13b is electrically connected to the first data line, the second data line, and the third data line, respectively. Then, a color filter 504 is formed on the thin film transistor 502a, the first scanning line, and the first data line. A color filter 506 is formed on the thin film transistor 502b, the second scanning line and the first data line, and the color filter 504 and 506 are adjacent to each other. The color filters 504 and 506 are provided with contact holes 518a and 518b, respectively, for exposing the first end 513a of the thin film transistor 502a and the first end 513a of the thin film transistor 502b to facilitate the thin film transistor 502a and 502b. And subsequent processes

TW0968F (Youda) .ptd Page 15 200428662 V. Description of the invention (12) " The corresponding daylight element electrode is electrically connected. Next, a single-color photoresist layer 508 is formed on the thin film transistor 202c, the color filters 504 and 506. The color photoresist layer 508 may be a color positive photoresist layer or a shirt color negative photoresist layer. The color photoresist layer 508 in this embodiment is described using a color negative photoresist layer as an example. Then, the color photoresist layer 5 0 8 is patterned using a half-tone mask 5 丨 2 to form a photo spacer 5 2 4, a color filter 5 0 9, and a contact hole 518c ′ as shown in FIG. 5B. The color filter 509 is formed on the thin film transistor 502c, the third scanning line and the third data line, and is adjacent to the color filter 506 or 504. The optical spacer 524 is formed on the color filter. The junctions of the light filters 506 and 509, or the photo spacers are formed on the junctions of the color filters 504 and 509. The contact hole 518c is formed in the color filter 509 to expose the first end 513a of the thin film transistor 502c, so as to facilitate the electrical connection between the thin film transistor 5 0 2 c and the daylight electrode completed by subsequent processes. Next, the day element electrodes 517a, 517b, and 5 17c are formed on the color filters 504, 506, and 509, respectively. As shown in FIG. 5C, the method ends. Among them, the pixel electrodes 517a, 517b, and 5 17c are separated from each other, and the pixel electrodes 5 17b and 5 17c are distributed on both sides of the photo spacer 524, or the day electrodes 517a and 517c are distributed on both sides of the photo spacer. It should be noted that, in the present invention, a photo spacer 524, daylight electrodes 517a, 517b, and 517c are sequentially formed, and the material of the photo spacer 524 is the same as that of the color filter 509. When the color photoresist layer 508 in FIG. 5A is a color negative photoresist layer, the positions of the opening region 512c, the translucent region 512b, and the opaque region 5 1 2 a in the half-tone mask 512 respectively correspond to Photo spacer 5 2 4, color filter 5 0 9 and

TW0968F (AUO) .ptd Page 16 200428662

The position of the contact hole 518c. ★ Day G tL, when the photoresist layer is positive, the other half of the M color photoresist layer 508 will be a colored opening area; respectively, the opaque area, semi-transparent area, and contact hole 518 of ==. The position corresponds to the first spacer 524, the color light sheet 5009. In addition, the reference a in FIG. 5A is a _ pn ^ ^ ^ ^ The color first resistance layer 5 〇 is on the thin film transistor 50 2c _ & The predetermined thickness is greater than or equal to the height difference between the top of the optical spacer 524 in FIG. 5B and the surface of the first end 51 3a of the thin film transistor 502c, and the thickness of the color filters 504, 506, and 509 may be the same. Among them, the colors of the color phosphors 504, 506, and 509 are any combination of red (R), green (G), and blue (B). It should be noted that the present invention can also directly form a color photoresist layer on a thin film transistor, a scan line, and a data line. The scan line and the guest material line are the gates of the thin film transistor, respectively. And one end is electrically connected. Then, the color photoresist layer is patterned using a half-tone mask to form a photo spacer, a color filter, and a contact hole. Among them, a color filter is formed on the thin film transistor, the scan line and the data line, an optical spacer is formed on the color filter, and a contact hole is formed in the color filter for exposure. The other end of the thin film transistor, such as a source or a drain. In addition, the color of this colored moonlight is any one of red (R), green (G), and blue (B). Embodiment 3 Please refer to FIGS. 6A to 6B, which show a TFT LCD made of a black matrix (BM) according to Embodiment 3 of the present invention.

200428662 V. Description of the invention (14) Process sectional view of the manufacturing method of the photo spacer in the process. In FIG. 6A, first, a glass substrate 601 is provided to form three thin-film transistors (not shown in FIGS. 6A to 6B), three scan lines (not shown in μ to 66), and data lines 602a. , 60b and 602c, pixel electrodes 60 "and 6041) on a glass substrate 601. For example, data lines 60 2a, 602b, and 602 (: are connected to the first thin film transistor and the second thin film transistor, respectively). One end of the crystal and the third thin-film transistor are electrically connected. The day element electrodes 604a and 604b are electrically connected to the other end of the first thin-film transistor and the second thin-film transistor, respectively. The scan line and the third scan line are electrically connected to the gates of the first thin film transistor, the second thin film transistor, and the third thin film transistor, respectively. When one end of the thin film transistor is a drain electrode, the other of the thin film transistor is electrically connected. One end is source two. When one end of the thin film transistor is a source, the other end of the thin film transistor is a drain. In addition, the day element electrode 604a is located between the data lines 602a and 602b, and the book element electrode 604b is located at The data lines 602b and 602c. Then, a black photoresist layer 6 is formed. 6 on three thin film transistors, three scanning lines, lean lines 602a, 60 2b and 602c, and pixel electrodes 604a and 604b. Among them, the black photoresist layer 606 can be a black positive photoresist layer or black negative light The black photoresist layer 606 in this embodiment is described by taking a black negative light < resist layer as an example. Then, a half photomask 612 is used to pattern the black photoresist layer 606 to form a photo spacer. 624, opening 607a & 07b, black matrices 608a, 608b, and 608b, as shown in FIG. 6B, the method ends. In the first figure, the black matrix 608a is formed on the first thin film transistor, the first Above the data line 602a, the black matrix 608b is formed on the second thin film (the crystal, the first: the scanning line and the data line 602), and the black matrix 6 is formed.

200428662 V. Description of the invention (15) Above the third thin film transistor, the third scanning line and the data line 60 2c. The photo spacer 624 is formed on the black matrix 608b, the opening 607a is formed between the black matrices 6 0a and 6 0b, and the opening 607b is formed on the black matrix 6081) And 6060, and the openings 6073 and 6071) are used to expose the day element electrodes 604a and 604b, respectively. Among them, the present invention can also form photo spacers on the black matrices 608a and 608c. It should be noted that the material of the photo spacer 624 is the same as that of the black matrix 608b. When the black photoresist layer 606 in FIG. 6A is a black negative photoresist layer, the positions of the opening region 6 12c, the translucent region 612b, and the opaque region 612a in the half-tone mask 612 correspond to the light, respectively. Positions of the spacers 624, the black matrices 60 °, 6 08b, and 608c, and the openings 60 7a and 60 7b. In contrast, when the black photoresist layer 606 is a black positive photoresist layer, the positions of the opaque area, the semi-transparent area, and the opening area in the other half-tone mask correspond to the photo spacer 624 and the black matrix 6 respectively. 〇8a, 608b, and 608c, and the positions of the openings 607a and 607b. In addition, the predetermined thickness of the black photoresist layer 606 in FIG. 6A on the day electrode 60 ° is greater than or equal to the height difference between the top of the spacer 624 in FIG. 68 and the surface of the pixel electrode 604a, black The thicknesses of the matrices 608 /, 60, and 608c may be the same. In the manufacturing method of the photo spacer disclosed in the above embodiments of the present invention, a half-tone mask is used to pattern the photoresist layer to form a photo-space Objects, insulating layers and contact holes or photo spacers and black matrix can reduce the process steps and photoresistance consumption of TFT LCD, which is quite economical. In summary, although the present invention has been disclosed as above with a preferred embodiment However, its Asia and Africa are used to define the present invention. Anyone skilled in this art will not depart from it.

200428662

TW0968F (AUO) .ptd Page 20 200428662

[Brief description of the drawings] Figures 1A to 1E are the traditional process diagrams of the manufacturing method of the optical spacer in the process with a high aperture ratio. The cross section of the TFT L is shown in Figures 2A to 2E. A process cross-sectional view of a method for manufacturing a photo spacer in a TF 'LCD process in which a color filter is formed on an array. • No. ~ 31) is a process cross-sectional view of a conventional method for manufacturing a photo spacer in a TFT LCD process capable of forming a black matrix. Figures 4A to 4C are cross-sectional views showing a method of manufacturing a photo spacer in a TFT LCD process with a high aperture ratio according to the first embodiment of the present invention. Figures 5A to 5C are cross-sectional views showing the flow of a method for manufacturing a photo spacer in a TFT LCD process in which a color filter is formed on an array according to the second embodiment of the present invention. FIGS. 6A to 6B are cross-sectional and sectional views of a method for manufacturing a photo spacer in a TFT LCD manufacturing process capable of forming a black matrix according to the third embodiment of the present invention. Description of drawing symbols 102, 201, 301, 402, 501, 601: glass substrates 104, 202a, 202b, 202c, 404, 502a, 502b, 502c: thin film transistors 105, 20 5, 40 5, 50 5: closed Pole 106, 406: Storage capacitor 107, 407: Scan line

200428662 Brief description of drawings 108, 408: pads 109, 302a, 302b, 302c, 409, 602a, 602b, 602c: data lines 110, 410: staggered area 11 1, 4 11: protective layer 11 2: organic material positive photoresist Layers 113a, 213a, 413a, and 513a: first ends 113b, 213b, 413b, and 513b: second ends 114, 122, 210, 212, 312, and 314 photomasks 11 6, 4 1 6: insulating layers 117, 217a , 217b, 217c, 304a, 304b, 417, 517a, 517b, 517c, 604a, 6 04b: day element electrodes 118a, 118b, 218a, 218b, 218c, 418a, 418b, 5 1 8 a, 5 1 8 b, 5 1 8 c: contact holes 119, 219: notches 1 2 0, 2 1 4, 3 1 0: organic material negative photoresist layers 124, 224, 324, 424, 524, 624: photo spacers 204, 206, 209, 504, 506, 509 ·· Color filter 2 0 8: Color negative photoresist layer 3 0 6: Black negative photoresist layer 307a, 307b, 607a, 607b: Opening 308a, 3 08b, 308c, 608a, 608b, 608c : Black matrix 41 2: Photoresist layers 414, 512, 612: Half-tone mask

200428662

Claims (1)

200428662 6. Scope of patent application 1. A method for manufacturing a photo spacer, including: providing a glass substrate; forming at least one thin film transistor (TFT), and a data line (data line) and a scan line (scan 1 in) on the glass substrate, the data line and the scan line are overlapped in an interlaced area (X-over), and the thin film transistor has a source and a drain Forming a photoresist layer on the thin film transistor, the data line, the scan line, and the staggered area; and patterning the photoresist layer using a half-tone mask to form at least one optical interval Material, an insulating layer, and a first contact hole, wherein the insulating layer is formed on the thin film transistor, the data line, the scanning line, and the staggered area, and the optical spacer is formed corresponding to the data The first contact hole is formed in the insulation layer on the line, the scan line, and the insulation layer of the staggered area to expose the source electrode or the drain electrode. 2. The method according to item 1 of the scope of patent application, wherein the method in the step of forming at least a thin film transistor, a data line and a scan line further comprises: forming a storage capacitor and a pad on the glass On the substrate. 3. The method according to item 2 of the scope of patent application, wherein the step of patterning the photoresist layer using a half-tone photomask further comprises: forming a second contact hole, the second contact hole is located at And is used to expose the connection. 4. The method according to item 1 of the scope of patent application, wherein the photoresist layer TW0968F (AUO) .Ptd Page 24 200428662 6. Scope of patent application It is an organic material photoresist layer. 5. The method according to item 1 of the scope of patent application, wherein the insulating layer is an organic substance layer. 6. The method according to item 1 of the scope of patent application, wherein the half-tone mask has an opaque area, a semi-transparent area, and an opening area. When the photoresist layer is a positive photoresist layer, the The positions of the light-transmitting region, the semi-light-transmitting region, and the opening region correspond to the positions of the photo spacer, the insulating layer, and the first contact hole, respectively. 7. The method according to item 1 of the scope of patent application, wherein the half-tone mask has an opaque area, a semi-transparent area, and an opening area. When the photoresist layer is a negative photoresist layer, the The positions of the opening region, the translucent region, and the opaque region correspond to positions of the photo spacer, the insulating layer, and the first contact hole, respectively. 8. The method according to item 1 of the scope of patent application, wherein the material of the photo spacer is the same as that of the insulating layer. 9. The method according to item 1 of the scope of patent application, wherein after the step of forming a photo spacer, the method further comprises: forming a day electrode on the insulating layer and next to the spacer, the pixel electrode The first contact hole is electrically connected to the drain electrode or the source electrode. 10. The method according to item 1 of the scope of patent application, wherein the method further comprises: forming a thin film transistor, a data line and a scan line and forming a photoresist layer between the step of forming a thin film transistor, a data line, and a scan line; A protective layer is disposed on the thin film transistor, the data line, the scan line, and the staggered area. TW0968F (Youda) .ptd Page 25 200428662 6. Application for Patent Scope 11. The method described in item 10 of the scope of patent application, which includes the step of forming a photoresist layer at 30, and includes forming a photoresist layer On the protective layer. 12. The method according to item 11 of the scope of patent application, wherein the step of using a half-tone photomask further comprises: using a half-tone photomask to pattern the photoresist layer to form a spacer, an insulating layer, and A first contact hole, wherein the insulation is formed on the protective layer, the photo spacer is formed on the insulation layer corresponding to the scan line and the staggered area, and the first contact is in the insulation layer, Used to expose the source or the drain. 13. A method for manufacturing a photo spacer, comprising: providing a glass substrate; forming at least a first thin film transistor, a first scan line data line, a second thin film transistor, a second scan line, and a line On a glass substrate, the first thin-film transistor has a source and a first: and, the second thin-film transistor has a first second drain; and a first color filter and a light sheet are formed on the first thin-film transistor. A thin film transistor scan line and the first data line; forming a color photoresist layer on the first color filter, the transistor, the second scan line and the second data line; and using half The mode photomask patterned the color photoresist layer, with a spacer, a second color filter, and a first contact hole, and a 'color-reflective film' was formed in the first thin-film transistor, the first In the method, at least one optical edge layer-shaped data line, a hole system is formed, a first second data has a first two source electrodes, and the first thin film forms a light, and the second scan line TW0968F (Youda) .ptd Page 26 200428662 6. The scope of patent application * ^ and the second data line, and adjacent to the first color filter L 4 optical spacer is formed in the first color filter The first contact hole is formed in the second shirt color filter at the interface between the second shirt color filter and the second shirt color luminous sheet, and is used to expose the first or second source electrode. 14. The method according to item 13 of the scope of the patent application, wherein the method further comprises: forming a first color filter with a second contact hole in the step of forming a first color filter. The sheet is on the first thin film transistor, the first scan line and the first data line, wherein the second contact hole is used to expose the first source electrode or the first and / or electrode. 15. The method according to item 14 of the scope of the patent application, wherein the method is further burdened after the step of using a half-tone photomask: forming a first pixel electrode and a second pixel electrode on the first On the color filter and the second color filter, the first celestial electrode and the second celestial electrode are located on both sides of the photo spacer. The first celestial electrode system is through the second contact hole. The second source electrode is electrically connected to the first source electrode or the first electrode, and the second celestial electrode is electrically connected to the second source electrode or the second electrode through the first contact hole. 16. The method according to item 13 of the scope of the patent application, wherein the half-tone mask has an opaque area, a semi-transparent area, and / or an opening area. When the color photoresist layer is a color positive photoresist layer The positions of the opaque area, the translucent area, and the opening area correspond to the positions of the photo spacer, the second color filter, and the first contact hole, respectively. 17. The method according to item 13 of the scope of patent application, wherein the half-tone mask has an opaque area, a semi-transparent area, and an opening area. TW0968F (Youda) .Ptd Page 27 200428662 VI. When the color photoresist layer is a color negative photoresist layer, the positions of the openings, the semi-transparent area and the opaque area are respectively corresponding to the The positions of the photo spacer, the second color filter and the first contact hole. 18. The method according to item 13 of the scope of patent application, wherein the material of the light spacer is the same as that of the second color filter. 19. The method as described in item 13 of the scope of patent application, wherein the color of the first color filter and the second color filter is selected from the group consisting of red (R), green (G), and blue ( B) Any two colors. 20. A method of manufacturing a photo spacer 'includes: providing a glass substrate; forming at least a thin film transistor, a scan line and a data line, the thin film transistor having a source and a drain; forming a colored light A resist layer on the thin film transistor, the scan line and the data line; and The half-tone mask is used to pattern the color photoresist layer to form a photo spacer, a color filter, and a contact hole. The color filter forms the thin film transistor, the scan line, and the data. Above the line, the optical spacer is formed on the color filter, and the contact hole is formed in the color filter to expose the source or the drain. 21. The method according to item 20 of the scope of patent application, wherein the method after the step of using a half-tone photomask further comprises: ^ = forming a day element electrode on the color filter and the photo spacer '5 Hai pixel electrode is electrically connected to the source or the drain through the contact hole Page 28 200428662 6. Application scope 22 · The method as described in item 20 of the scope of patent application, wherein the color of the color filter is red (R), green (G) and blue (B). Any color. A method for manufacturing a photo spacer 'includes: providing a glass substrate; 23, forming at least a first data line, a first line, and a third thin glass substrate; Scan line above the second-shaped light sheet; make the spacer three colors and the third color cross the light and the third three colors into a first and the thin film electric scan line, a first crystal, a first scan, a second scan The first, second, and third scanning line thin-film transistors have thin-film transistors and two thin-film transistors. The first and second thin-film transistors have a second data line and three data lines on the color data crystal to form a color photoresistor. The third The second layer above the thin-film electric filter line is on the crystal, the source and the third drain film transistor, the second color scan line and the second first color filter, the third scan line and the A second and third source electrode and one at the first thin electrode and forming a source electrode and a first second non-polar electrode; the body, the first color crossing light sheet on the material line; the second color filter third data Line as well The half-tone mask patterned the color light three-color filter is formed on the third data line and is adjacent to the sheet. The filter at the junction of the optical spacer color filter On the junction 'and a first three-thin thin crystalline transistor, the first color system is formed on the second or the second touch barrier layer to form a light contact hole, wherein the first body and the third scan A line filter or the second color first color filter, the color filter and the second hole are formed in the second TW0968F (AUO) as on page 29, 200428662 VI. Patent application scope color filter 2 4 · If this is formed one after another · Expose the third source # & described in item 23 < the first color filter In the film and a second shirt, a patent application for forming a thin film transistor with a second and a first, a first with a third contact hole crystal, the second scan line and the contact hole are used to expose the first One is to expose the second source or the 25. If a patent application is applied to the third and electrode using a half-tone mask. Method 'wherein the color filter step of the method is that the color filter is on the first data line and is shaped on the second thin film, wherein the second and third contact holes are formed by contact holes. The first scan line and the first second color filter the source or the first light pole of the second data line; The method according to item 24, wherein the steps of the method further include: forming a first day element electrode and a pixel electrode in three colors to reflect light; the third day element is connected by the first, the second The second drain hole and the third 26. If the color transition light is red 27. A first color filter, the first pixel electrode on the sheet is located at the second of the photo spacer The contact hole is electrically connected to the first source daylight electrode through the third, the third daylight source or the third drain electrode is electrically applied to the patent scope No. 23, the second color filter. Sheet and (R), green (G), and blue photo spacers manufacturing method second pixel electrode and a third second color filter and the first or second pixel electrode system and both sides, the first A pixel electrode or the first drain electrode is electrically connected to the contact hole and the second source electrode or the electrode system through the first contact. The method described above, wherein the combination of colors (B) of the first and third color filters. 'include: TW0968F (AUO) .ptd 28. The method according to item 27 of the scope of patent application, wherein the step of using a half-tone photomask further comprises: forming an opening for exposing the pixel electrode. 200428662 6. The scope of the patent application provides a glass substrate; at least a thin film transistor, a scan line, a data line and a plain electrode are formed on the glass substrate. The data line is adjacent to the day element electrode to form a black photoresist layer on the glass substrate. The thin film transistor, the scan line, the material line and the day electrode; and the black photoresist layer is patterned using a half-tone mask to form a spacer and a black matrix (b 1 ackmatri X, B M) The black system is formed on the thin film transistor, the scan line and the data line, and the spacer is formed on the black matrix. > 2 9 · The method according to item 27 of the scope of patent application, wherein the photomask has an opaque area, a semi-transparent area, and an opening area, when the color photoresist layer is a black positive photoresist layer The positions of the opaque region, the translucent region, and the opening region correspond to the positions of the optical spacer, the black, and the opening, respectively. -30. The method as described in item 27 of the scope of patent application, wherein the photomask has an opening area, a semi-transparent area, and an opaque area. When the color photoresist layer is a black negative photoresist layer The positions of the opening region, the translucent and opaque regions respectively correspond to the positions of the optical spacer, the black, and the opening. ^ 3 1 · The method described in item 27 of the scope of patent application, wherein the material of the spacer is the same as that of the black matrix. One painting the light one light matrix the light method halftone the black light area matrix halftone the black area and the matrix light