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TW200420716A - Polishing composition - Google Patents

Polishing composition

Info

Publication number
TW200420716A
TW200420716A TW092121153A TW92121153A TW200420716A TW 200420716 A TW200420716 A TW 200420716A TW 092121153 A TW092121153 A TW 092121153A TW 92121153 A TW92121153 A TW 92121153A TW 200420716 A TW200420716 A TW 200420716A
Authority
TW
Taiwan
Prior art keywords
abrasive particles
particle size
polishing composition
polishing
volume
Prior art date
Application number
TW092121153A
Other languages
Chinese (zh)
Other versions
TWI307712B (en
Inventor
Shigeaki Takashina
Yasuhiro Yoneda
Toshiya Hagihara
Original Assignee
Kao Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kao Corp filed Critical Kao Corp
Publication of TW200420716A publication Critical patent/TW200420716A/en
Application granted granted Critical
Publication of TWI307712B publication Critical patent/TWI307712B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A polishing composition comprising an aqueous medium and abrasive particles, wherein the abrasive particles comprise abrasive particles having a particle size of 2 to 200 nm in an amount of 50% by volume or more, the abrasive particles having a particle size of 2 to 200 nm comprising (i) 40 to 75% by volume of small size particles having a particle size of 2 nm or more and less than 58 nm; (ii) 0 to 50% by volume of intermediate size particles having a particle size of 58 nm or more and less than 75 nm; and (iii) 10 to 60% by volume of large size particles having a particle size of 75 nm or more and 200 nm or less; a polishing composition comprising an aqueous medium and abrasive particles, wherein the abrasive particles comprise abrasive particles (A) having an average particle size of 2 to 50 nm; and abrasive particles (B) having an average particle size of 52 to 200 nm, wherein a weight ratio of A to B (A/B) is from 0.5/1 to 4.5/1; a polishing process comprising subjecting a semiconductor substrate to planarization with the polishing composition; a method for planarization of a semiconductor substrate with the polishing composition; and a method for manufacturing a semiconductor device, comprising polishing a semiconductor substrate with the polishing composition. The polishing composition can be favorably used in polishing the substrate for a semiconductor device, and the method for manufacturing a semiconductor device can be favorably used for manufacturing a semiconductor device such as memory ICs, logic ICs and system LSIs.
TW092121153A 2002-08-28 2003-08-01 Polishing composition TWI307712B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002248857 2002-08-28

Publications (2)

Publication Number Publication Date
TW200420716A true TW200420716A (en) 2004-10-16
TWI307712B TWI307712B (en) 2009-03-21

Family

ID=31972541

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092121153A TWI307712B (en) 2002-08-28 2003-08-01 Polishing composition

Country Status (4)

Country Link
US (1) US20040040217A1 (en)
KR (1) KR100968105B1 (en)
CN (1) CN1286939C (en)
TW (1) TWI307712B (en)

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MY134679A (en) * 2002-12-26 2007-12-31 Kao Corp Polishing composition
JP3997152B2 (en) * 2002-12-26 2007-10-24 花王株式会社 Polishing liquid composition
WO2005038897A1 (en) * 2003-10-22 2005-04-28 Japan Science And Technology Agency Liquid composition, process for producing the same, film of low dielectric constant, abradant and electronic component
US7470295B2 (en) 2004-03-12 2008-12-30 K.C. Tech Co., Ltd. Polishing slurry, method of producing same, and method of polishing substrate
JP2005286046A (en) * 2004-03-29 2005-10-13 Nitta Haas Inc Abrasive composition for semiconductor
KR100637772B1 (en) * 2004-06-25 2006-10-23 제일모직주식회사 High selectivity CPM slurry composition for semiconductor STI process
TWI364450B (en) * 2004-08-09 2012-05-21 Kao Corp Polishing composition
US7056192B2 (en) * 2004-09-14 2006-06-06 International Business Machines Corporation Ceria-based polish processes, and ceria-based slurries
US20070209288A1 (en) * 2005-03-28 2007-09-13 Yoshiharu Ohta Semiconductor Polishing Composition
KR100641348B1 (en) 2005-06-03 2006-11-03 주식회사 케이씨텍 Slurry for CPM, its manufacturing method and polishing method of substrate
FR2891759B1 (en) * 2005-10-12 2009-04-10 Kemesys AQUEOUS ABRASIVE SUSPENSION BASED ON PARTICLES OF CERIUM DIOXIDE AND SILICA FOR POLISHING SURFACES OF MATERIALS
US8685123B2 (en) * 2005-10-14 2014-04-01 Saint-Gobain Ceramics & Plastics, Inc. Abrasive particulate material, and method of planarizing a workpiece using the abrasive particulate material
EP1813656A3 (en) * 2006-01-30 2009-09-02 FUJIFILM Corporation Metal-polishing liquid and chemical mechanical polishing method using the same
US20070176142A1 (en) * 2006-01-31 2007-08-02 Fujifilm Corporation Metal- polishing liquid and chemical-mechanical polishing method using the same
JP2007214518A (en) * 2006-02-13 2007-08-23 Fujifilm Corp Metal polishing liquid
US7902072B2 (en) * 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
DE102007062572A1 (en) * 2007-12-22 2009-06-25 Evonik Degussa Gmbh Cerium oxide and colloidal silica containing dispersion
JP2009164188A (en) * 2007-12-28 2009-07-23 Fujimi Inc Polishing composition
JP5220428B2 (en) * 2008-02-01 2013-06-26 株式会社フジミインコーポレーテッド Polishing method using polishing composition
CN101550317B (en) * 2008-04-03 2014-02-26 安集微电子（上海）有限公司 Chemical mechanical polishing solution for polishing polysilicon
KR101043977B1 (en) * 2009-05-07 2011-06-24 전은희 Dyeing tool for dyeing
US8025813B2 (en) * 2009-11-12 2011-09-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
JP5941612B2 (en) * 2010-08-31 2016-06-29 株式会社フジミインコーポレーテッド Polishing composition
JP5400228B1 (en) 2012-04-27 2014-01-29 三井金属鉱業株式会社 SiC single crystal substrate
CN104178033A (en) * 2013-05-27 2014-12-03 天津西美半导体材料有限公司 Nano cerium oxide polishing liquid composition
US9303190B2 (en) * 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
JP2016155900A (en) * 2015-02-23 2016-09-01 株式会社フジミインコーポレーテッド Polishing composition, polishing method and method for manufacturing crustaceous material substrate
CN105400491B (en) * 2015-11-04 2018-01-02 郑州磨料磨具磨削研究所有限公司 Lapping liquid abrasive material and preparation method thereof
CN106318222A (en) * 2016-08-18 2017-01-11 江苏锦阳不锈钢制品有限公司 Method for preparing high-precision polishing solution
CN106318220A (en) * 2016-08-18 2017-01-11 江苏锦阳不锈钢制品有限公司 Polishing solution for stainless steel surface machining
JP6825957B2 (en) * 2017-03-28 2021-02-03 株式会社フジミインコーポレーテッド Polishing composition
JPWO2020066873A1 (en) * 2018-09-25 2021-09-24 日産化学株式会社 Polishing method for silicon wafers with reduced carrier wear and polishing fluid used for it
JPWO2022044983A1 (en) * 2020-08-28 2022-03-03
CN113789127B (en) * 2021-10-20 2023-07-28 博力思(天津)电子科技有限公司 Polishing solution for copper film of through silicon via

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MY133700A (en) * 1996-05-15 2007-11-30 Kobe Steel Ltd Polishing fluid composition and polishing method
US6093649A (en) * 1998-08-07 2000-07-25 Rodel Holdings, Inc. Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto
US6143662A (en) * 1998-02-18 2000-11-07 Rodel Holdings, Inc. Chemical mechanical polishing composition and method of polishing a substrate
JP4113282B2 (en) * 1998-05-07 2008-07-09 スピードファム株式会社 Polishing composition and edge polishing method using the same
JP2000080352A (en) * 1998-06-11 2000-03-21 Allied Signal Inc Aqueous sol of metal oxide as slurry for polishing low dielectric material
US6270395B1 (en) * 1998-09-24 2001-08-07 Alliedsignal, Inc. Oxidizing polishing slurries for low dielectric constant materials
WO2000032712A1 (en) * 1998-11-27 2000-06-08 Kao Corporation Abrasive fluid compositions
KR100574259B1 (en) * 1999-03-31 2006-04-27 가부시끼가이샤 도꾸야마 Polishing slurry and polishing method
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US6454820B2 (en) * 2000-02-03 2002-09-24 Kao Corporation Polishing composition
US6261476B1 (en) * 2000-03-21 2001-07-17 Praxair S. T. Technology, Inc. Hybrid polishing slurry
ATE302830T1 (en) * 2000-03-31 2005-09-15 POLISHING AGENT AND METHOD FOR PRODUCING PLANAR LAYERS
KR100803876B1 (en) * 2000-05-12 2008-02-14 닛산 가가쿠 고교 가부시키 가이샤 Polishing composition
MY118582A (en) * 2000-05-12 2004-12-31 Kao Corp Polishing composition
US6800130B2 (en) * 2000-06-22 2004-10-05 Akzo Nobel N.V. Construction material
MY133305A (en) * 2001-08-21 2007-11-30 Kao Corp Polishing composition
JP3899456B2 (en) * 2001-10-19 2007-03-28 株式会社フジミインコーポレーテッド Polishing composition and polishing method using the same

Also Published As

Publication number Publication date
US20040040217A1 (en) 2004-03-04
CN1286939C (en) 2006-11-29
KR100968105B1 (en) 2010-07-06
TWI307712B (en) 2009-03-21
CN1488702A (en) 2004-04-14
KR20040019897A (en) 2004-03-06

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees