TW200415793A - Method and apparatus for exposing or forming pattern on thin substrate or the like - Google Patents

Abstract

The present invention relates to an exposure apparatus exposing a predetermined pattern while successively or sequentially moving an exposure area on a substrate to be exposed. The apparatus includes a device moving the exposure area along a specific direction in which variation in thickness of the substrate greatly occurs, a device detecting displacement of the substrate surface, and a device controlling tilt and height of the substrate surface. The tilting and vertical movement are performed in accordance with the detected displacement. A surface for the exposure is med to substantially correspond to the substrate surface at any time during an exposure time.

Description

200415793

V. Description of the invention (l) Background of the invention The invention relates to a «-χΐι ^ Λ- Li. · Device, which uses a semi-patterning system to lighten the photoresist and deposits or deposits a crystal on the exposure layer. The light pattern forms an image. ) ○ ^ Method and symbol for exposing a specific pattern on a sensitive material About a right-angled green > Yu f ^ y w /, with a thickness of a substrate such as a typical glass based on LCD (/ night Crystal display crying) used in the chamber conductor substrate :: Li's method of reverse exposure of V.

V and stacking many materials such as liquid crystal displays are formed by using lithography technology, bulk layers, insulation layers, etc. According to the lithography technology, a green also Rn μ, 0 ,, a kind of pre-resistance is added to the material to be processed to form the i removal layer (λ surface), and the photoresist is selected by mfu / for development and processing, such as money engraving It is formed: exposure on the left side) '-circuit,-electron microscope projection Λ light stupid ^ ^ method is exposure of shadows, such as lens projection) cast: up / this exposure method, the image of the photomask (exposure corresponds to 7 photoresistors: physical objects On the surface, a photoresist layer is added thereon, and the image of the exposure pattern on the image (the image forming the exposure pattern is shown in FIG. U). Set: tt hardening method and step scanning method have been known for a long time. 〇 The structure of the scanning exposure device. — The image is shot by the light beam of 4 and Ru, Ming system 1 〇 2 light, illuminate, etc.

Therefore, it is said that the duo has two straight movements in the same direction. After the step and scan set; exposure ,. A region is scanned relative to the substrate 3 ’

200415793 V. Description of the invention (2) Silly ^: In exposure, the focus of the projector [that is, the $ resist surface formed by the projection exposure]. The distance from the self-casting shirt to the exposed surface is equal (Glossy layer :: Volt 2 I: Surface: That is, there is a small wave on the exposed surface. Photoresistance meter ## 4 · ', the thickness of the substrate on which the resistance palace forms Unevenness, beauty; ^ caused by the adhesion of the substrate placed in this level of unevenness. + Substrate made i LCD surface use: Yu substrate as a semiconductor technology processing materials. P2 and # ^ I in Japanese Patent Application Publication Number 20 0 1 —3 6 0 88, when two: Γΐΐ plate has a characteristic distribution in the thickness of 1-side, "Zhe she did not consider the inherent wave of the glass surface off the substrate.", The resolution of the light (line width ) R and D0F (focus depth) can be expressed by the following formula: D0F = + /-K2 / K! 2XR2 / X (1) Weighing range = Representation exposure wavelength '⑽2 is a coefficient' depends on the program, and it should also be used for continuous exposure At this time, the full exposure field on the substrate surface must be within the common range. If the substrate surface is not in the D0F range, there is no image or tearing method to form an appropriate photoresist pattern. Wang, a mass-produced exposure device used in the manufacture of liquid crystal displays The maximum resolution of the line of the medium and high pressure mercury lamp is 15um. At this time, the Z group analysis R = l. Sum, exposure wavelength is; line), κι ^ = 0.5 (the values of K1 and K2 are used on the I line), formula (1) tD〇F = = + factory · 8. 6um, D0F range 17.2um. One half of the width of D0F, that is, 200415793

Page 11 200415793

At the same time, "Japanese Patent Application Publication" discloses a method in which the glass substrate has an enlarged thickness on the entire surface of the glass substrate. Such as distortion of π, " waves, etc., may occur. It can be maintained even when the pull-out direction corresponds to the bow-shaped light 'and then the auto-direction is performed in the scanning direction. However, according to the analysis result of the present inventor, the change in the diagonal direction is smaller than that in the glass substrate in the pull-out direction. In addition, this document does not indicate uniform exposure of glass substrates with automatic thickness change. SUMMARY OF THE INVENTION The object of the present invention is to provide a pattern for use in large-size liquid crystal display devices. According to a feature of the present invention, a pattern is prepared while continuing or subsequently to be exposed. The method includes exposing a light region on a substrate along an exposed surface. According to another characteristic of the present invention, the machine for preparing the exposure of the exposed surface of the substrate is continued or the exposure area on the substrate is subsequently removed to move an exposure area along the wave direction. File number 2 0 0 1-3 6 0 8 8 The exposure within the range of D0F is implemented. According to the document, the thickness changes in the scanning direction of the glass substrate's pull-out square slit on the manufacturing date and the exposure focus is implemented. The focus margin is even confirmed at dof, the thickness change of the glass substrate is pulled out. The orientation is large 'and the thickness is in the focusing method, and is not established with large light. The light method and apparatus are formed over the entire area of the glass substrate that is actually formed. An exposure method is used to expose a predetermined area of the substrate and remove an exposed area. The wave direction existing on the surface is removed and exposed. An exposure device includes a detection structure to expose a predetermined pattern in a field. The device still includes a mechanism for the exposure of the wave existing on the substrate

Page 12 200415793 V. Description of the invention (5) On the surface. According to another characteristic of the present invention at an exposure time or subsequent exposure to be set to occur along a specific mass. Another feature of the Ming Dynasty includes the retention device for the detection device. Its direction is at a right angle to eliminate the detection device. The empty device is installed to control the other characteristic. The exposure structure is designed to change the thickness of the device as it moves. Device, device package changes in the root object. The degree of unevenness of the table is set to four shifts, and the amount of ° can be said that the advantages can be explained that the hair will be moved after the exposure to control, to expose the area, according to the hair and continue to include a direction data The hair device has a uniform package, and the corners of the surface extension include an invention. The substrate is controlled by the lighter substrate made of the attached substrate. The substrate control base area is combined with the _ or I and _ types. #One of the implementation surfaces One of the surface of the exposure board is provided with a surface detection tilt and any inclination of the light area in the direction. A substrate direction shift exposure device is provided to expose the height of the exposure surface to expose. The device reaches height, and the surface takes substantially time to occur. An exposure is scheduled to move and an exposure exposure area is provided. A device is provided to detect the displacement of a plurality of displacement mechanisms on the surface of an object in the direction of the intersection. 'Heguang-predetermined map contains exposed light areas based on a pattern corresponding to a substrate along a specific side. The wavy or thick level of the substrate thickness can be lifted on the object and at least the movement of the device to the independent position can be preserved. The advantages will be disclosed in the following description. The section will teach the present invention. The object of the present invention is achieved and obtained by a combination of the devices indicated below. Enter and constitute a part of this specification, for the purpose of example 'and the general description mentioned above and the following

Page 13 The light source 11 is the energy used by the high-pressure mercury lamp or laser device to output exposure. The high-pressure mercury lamp emits g-rays (43 6nm) or I-rays (365 nm). The laser device may be an XeCL-excitation laser device (308 nm), and a KrF-excitation laser device t 200415793 V. Description of the invention (6) The detailed description of the fork embodiment is used to explain the principle of the present invention. Detailed description of the present invention The characteristics of the present invention will be described with reference to the following drawings. Fig. 1 shows an example of the structure of an exposure device capable of removing the influence of wave or uneven thickness on the exposed surface of an object according to the present invention. An exposure device 1 includes an illumination light system 12, a mask stage 3, an image optical system 14, and a substrate stage 15, which are then arranged in the optical axis of the light source 11 1. A mask M is arranged on the mask table 13 and a glass substrate s is arranged on the substrate table 15. (248nm), ArF excitation laser device (I93nm), etc. An optical system 6 includes an illumination light system 12, a relay lens, a mask M, and an image optical system 14 in a light path radiated from a light source. An exposed substrate or a glass substrate s of the liquid crystal display device is arranged at an image focusing position of the shadow system 14. Glass substrates and masks are provided. The mask 'M' is arranged on the mask table 13 at a predetermined 'this formation-yoke' to a foreigner > at a predetermined position on the plate amount 15, the glass is linearly transported on the board 15 in the same direction as the predetermined direction M The distortion of the exposed surface of the substrate S is placed inside; the piece detector 10 detects the distortion condition of the exposed surface. A CPU71 is connected to the distortion by the bus 9, 1X1) ... like 1 this detector 10, its structure?

200415793 5 'Invention description (7) The measurement operation of the distortion condition detector 丨 〇 can be controlled to measure the distortion condition of the exposed surface. The CPU 71 stores the unevenness data in the RAM 72 in the memory device, and the device is connected to the bus 9 with the measurement result from the distortion condition detector 丨 0 and the position of the glass substrate S. The control program of C P U 7 1 is stored in advance in a memory device iROM 73 connected to the bus 9. The scanning direction of the exposure area determination section 74 determines the exposure area e and the scanning direction information of the exposure area E related to the wave information. This information is from the measurement results of the distortion condition detector 丨 0 controlled by RjM 72 according to the CPU 71. ^ 取。 Taken. The CPU 71 may cause the RAM 72 to store information related to the position information. cpu = set 76 is connected to bus 9 to display the location information related = taxi: exposure area information E and scanning direction information tfu of the domain, and not < Beixun. The light beam from the light source 11 is masked by the optical pattern image of the sun, Zhaomingduo, and Ma. During the exposure time, the CPU 71 synchronously shapes an arrow A on the glass substrate S, and moves the mask stage 13 and the substrate stage 15 at the head A, and determines the exposure position. On the reverse side of the image,-△ ,,, and c: If the shirt-like optical system 14 is formed, the furniture is turned, and one moves in the opposite direction. Move in the direction. 々It is upright. The two units move in the same direction as the mask stage 13 and the substrate stage η. The CPU controls the exposure meter. The arrow can be referred to as the exposure area (field) f. Set 1 and scan. With glass substrate S industry. Μ ασ ′ and the work of performing the exposure step, the profile optical system 1 2 is self-exposed, the mask stage 13 and the substrate stage 15 are obtained from the light source 11 with a rectangular light region, and are added to the mask M.

Page 15 200415793 V. Description of the invention (8) ΐ Since; tfl: · Ansing direction information 1 moves simultaneously at a predetermined time. Because the mask M is exposed on the glass substrate§. When the exposure optical system i 4 in the exposure set 1 in the figure i reverses the mask pattern to the temple and substrate stage 15 during the exposure time, they move in opposite directions to each other. In addition, the direction in which the thickness of the glass changes greatly is parallel to the mask stage 13 and the base movement direction. The μ 1 fi base = I 丨 5 includes a tilt mechanism. The base plate 15 is supported by a brake called a tilting machine. It has four piezoelectric elements with four corners on it. The projection amount (height) of a female component can be controlled individually. In other words, the substrate stage 15 can be crossed at any angle in a right-angle direction-preliminary extension direction (projection plane) of the 2: 1 plane area or a ray line direction (tilt) related to these directions. In addition, the substrate 15 may move parallel to the projection plane (i = m). The tilt and vertical movement can be controlled by the control device at the same time. The exposure device 1 also includes a tilt detection mechanism to measure the exposure m on the substrate s. The private tilt detection mechanism includes a semiconductor laser device 18, a light source, and a 'PSD (position sensitive device) 2. To detect reflected light. Glass, Γ + ΐ = displacement direction and displacement amount can be shot on the surface of the substrate S at an angle of 3 using the laser beam θ of the semiconductor laser device 18 and received on the glass substrate S 屮. The reflected beam R and 卩 of II are detected by PSD 2 (3, the reflected beam R is detected, and the 2 and 4 focal positions can be obtained from the wheel to the two electrodes to pick up the signal value of PSD 20. Therefore, the displacement direction of the glass substrate s And the displacement can be obtained from the direction and distance of the electric central position of SD 20. The output current of PSD 20 is a / d (not shown) of the A / D converter.

200415793 V. Description of the invention (9) For example, it is the control device (computer) shown in Figure 11 21 It can be stored in the control device or external memory card. ^ After storage distribution (wave or uneven thickness) can be entered in ' After the beauty, all the displacement areas of the exposed surface, or the projection planes of waves and unevenness, are obtained. In the substrate table: the power of all parts (exposure field) is relatively different from the exposure when the light power is sufficiently small for the light source / source. Therefore, even if the wavelength range of the light wavelength of the photoresist material is added to the surface of the glass substrate s, the photoresist material cannot be exposed to light. Ten: =: f displacement distribution is added to-approximate line, such as target addition using the least squares method, & the slope of the straight line and the average high yield of all displacements plus the difference, this point will be explained in Figure 12. Therefore, the piezoelectricity = the direction of expansion and contraction and * 'can be used as the brake 16 in the four corners; the extension and contraction direction and amount of polarity and strength are calculated to the female one pen element (the brake) 16. Result , This tilt becomes " 〇 " and the average height of all displacements and the image optical system 14

The heights of the focal surfaces coincide. ~ Image I Next, the operation of the exposure device 1 of the present invention is described below. The front has the same degree. The correction value is set in the original detection operation. The technical range of the measuring device is well known, and its details are omitted. The measurement of the displacement in the exposure% and the scanning exposure are repeated, and the mask stage 丨 3 and the substrate stage 丨 5 are moved relative to the image optical system 14 at the same time. An initial voltage is applied to the piezoelectric element 16 and the setting of the glass substrate 3 and the substrate table 5 is arranged. Ον (or a correction value obtained in advance) so that all the brakes u

Page 17 200415793 V. Description of the invention (10) Secondly, the laser beam L of the conductor laser 18 is applied to the exposure surface of the glass substrate S at the displacement of each plural positions in the exposure field to f

the amount. / 贝 J Subsequently, the glass substrate S is inclined at a predetermined angle to an arbitrary direction that intersects with a right angle, the extending direction of the planar area (projection plane), which is defined by < Mask M ^ = exposure pattern 'or the like One of the directions is a diagonal direction, and the height of 3 from the substrate S is adjusted so that the difference in the displacement of the glass substrate 3 is reduced. The implementation of the inclination and adjustment of the height is based on the displacement (wave) detected by the exposed surface of the broken glass substrate (M0 has a slope) to correct the inclination, and the black plate S is moved up and down to adjust the distance between the glass substrate s and the mask M For a more detailed explanation, the moving surface of the glass substrate s is moved below the exposed surface of the glass: plate; at the time ... the height of the surface of the image formation surface of the imaging system U is heavily exposed before: ... the average height and the shadow detection glass: J ίs not the two surface | A y child is not ten can only send one

The longitudinal direction does not occur at the substrate 3 ° σ, and the glass substrate S plane is actually a one-dimensional result such as the 2 1 characteristic 1 wave and thickness. As shown in Figure 3 and Figure 3, the detection of waves or thickness is made by a broken glass substrate. In addition to the girl i Α R, you can also use the 4 method. In addition to using the reflected beam jj above, use the interference or sensing pen first. . Page 18 415793 V. Description of the invention (11) __ According to the above, 卩 丨 丨 exposes the surface, and receives the laser beam [by irradiating the substrate 3 and the like, the wave of the substrate s], and The reflected light beam and processing signal generated by the fruit, focus displacement sensing, or: the displacement of sleep measurement and thickness unevenness can be focused by laser; J, Shang II) and ί. · Accuracy of 1㈣. Exposure field f-scanning of the real Shimen-Xi / Li and 15 of the substrate table is preferably controlled according to the wave 1 before the exposure, and is applied on the entire surface of the glass substrate S. Day-to-day measurement I, and the control can be based on the measurement results ^ 3 ^ P * The light has been illuminated as above. However, the exposure method of the present invention is not limited to f scene. Exposure can also be used Α οη λ 1. 7 丨 good and good advantages from ^ Wang Xin imaging technology. In addition, a particularly large exposure method of 2 Ming is obtained in step and step and _ exposed by 2 $ 贝 ^. However, the present invention can also be applied to spectroscopic re-emission, which can make the exposure of the glass substrate when the exposure field is stationary at a fixed position is called a large change of a typical substrate. The second figure of the invention shows the distribution of the thickness of the glass substrate s.) 'It has a thickness comparison in one direction. For example, as in the exposure method of a plastic substrate. An example of the measured value (uneven thickness)

The thickness of a glass substrate having an average thickness of 0.7 is measured in a particular direction. A change (peak-to-peak) of about 10um can be achieved in a cycle of 100-200mm. The direction of change in thickness has been shown, but it has been confirmed that it is very difficult to see the change in the direction of the right angle father. It has also been confirmed that when the broken glass substrate s is placed on the stage 15, changes in #degrees are substantially reflected, and the glass substrate surface

Page 19 200415793 V. Description of the invention (12) The displacement (wave) of the surface can also appear as illustrated in Figure 3. The direction of the change in the thickness of the exposed surface of the glass substrate $ appears largely in the direction represented by X, the direction in which the thickness is uniform throughout is represented by γ, and the axis of displacement is represented by Z. There are melting and floating methods for the production of glass substrates. It has been confirmed that the two meter cuts have the same characteristics. In this plan, a glass substrate with a virtually constant thickness can be obtained by pulling out the glass material while in the molten state. However, it is known that the direction showing a large thickness change is that when the glass is manufactured, it crosses at right angles to the direction in which the glass material is pulled out. In other words, the Y direction is the direction in which the glass material is pulled out when the glass substrate is manufactured. Figure 4A and Figure 4B illustrate the difference between the scanning direction and displacement in the exposure field. In Fig. 4A, in the scanning direction, the longitudinal direction of the rectangular exposure field is extended in one direction and parallel to the X direction in Fig. 3. In Fig. 4B, the scanning direction, that is, the longitudinal extension of the rectangular exposure field extends in one direction parallel to the γ direction in Fig. 3. These directions correspond to the relationships in Figs. 5 and 6, which will be described later. Therefore, if the glass substrate S uses a rectangular exposure field with the same area, the exposure date can be shifted d. As shown in Figure 4B, the short side b arranged in the X direction is longer than that arranged in the X direction in Figure 4A. Side & is short. In other words, when considering the thickness distribution characteristics of the broken glass board or the displacement of the exposed surface of the glass substrate S derived from the thickness distribution, the method corresponding to the method of FIG. X-direction tracing is very different from the viewpoint of D 0 F. Fig. 7 illustrates the relationship between fluctuations and thickness irregularities of the broken glass substrate 8 exposed in the direction of Fig. 6 and the exposure field. As can be seen from Figure 7, the implementation of tilt and vertical movement can make the exposure field f

Page 20 200415793 V. Description of the invention Often, according to the displacement protection column, the solar odor apricot body protects α /, holding the coke, that is, the τ exposure% of the surface of the broken glass substrate S is known to be uneven. To show Π A, first move %% in Shao-ri, which crosses the scanning direction, and then perform the same scan (Fu-ψ ^ direction is repeated in steps and steps to make the substrate full. Exposure crane, exposure is not carried out during stepping. Exposure. Supporting part of masking table 13; [7 can be used as a brake for 15 5. 16. The used brake 16 can be used as a magnet. Solenoids, etc., or static electricity. Figures 8A and 8B illustrate the focus adjustment movement, such as Figure 4A, Figure 4B, Figures 5 to Figures ::: Straight and straight solution, HU obtained after tilting as shown in Figure 8B. It should be tilted: f㈣ ... the difference d is small. The maximum two averages / two 3: Rantu's level point 'image / image | focus surface of the image optical system 14 is arranged at the level point. In the example of Figure 5' is scanning When the rectangular exposure has X 20 band size in the γ direction of Fig. 6, the maximum value of the displacement difference is 75um, and the maximum displacement difference of the rectangular exposure field f in the scan X direction is 48. In one example, there is a significant difference between the maximum values of the displacement. When the visibility of the exposure field (Figure 6) is large, the exposure at one time The area range is expanded, and productivity is increased. In general, the shape and size of the exposure field are limited by the lens manufacturing limitations of the imaging optical system 14. In addition, the diameter of the lens that can be manufactured is 2000-300mm The width of the exposure field is about 50-100 mm according to the exposure wavelength and resolution.

Page 21 200415793 V. Description of the invention (14) It should be about 50-100 mm long, and the length of the short side b of the exposure field f shown in Figure 7 should be the exposure field f shown in Figure 7. The length of the long side a shown is 1/5 to 1/3. The shape of the exposure field may be an elongated pore. However, the pores required for the imaging system should have a higher convergence magnification, in order to effectively use the light beam from the light source, and the light system becomes more complicated. It is also effective to make the shape of the exposure field elliptical, because the burden on the light system can be reduced. Brother 9A and Brother 9B illustrate an example of tilt and vertical movement, which can improve the effect of focus adjustment, as illustrated in Figures 4A, 4B, 5 and 6. Figure 9A illustrates the results of uniaxial tilt (including vertical movement), in which the rotation axis r of the exposure field f is arranged in the γ direction. Fig. 9B illustrates the results of the biaxial tilt and vertical movement, in which the rotation axis ^ of the exposure length f is arranged in the X direction, and the rotation axis r2 is arranged in the Y direction. In addition, Figures 丨 〇a and ιοΒ illustrate the effective changes in the exposed surface obtained from the tilt illustrated in Figures 9A and 9B. In FIG. 10A, the distribution of waves on the surface, and the amplitude of the wave or thickness unevenness' masking M is projected thereon by the imaging optical system 14 and is limited to 2. Oum or less. The maximum value of the displacement difference was reduced from 4 · 8um to 2 · 0 um, and the benefits of the focus adjustment of tilt and vertical movement can be verified. In Fig. 10B, it can be confirmed that the maximum value of the displacement difference can be further limited compared with the conditions illustrated in Fig. 10a. The area with a displacement difference of 丨 · um or less is expanded, and the maximum value of the displacement difference can be limited to丨 · 9uni. Therefore, the exposure pattern can be exposed on the glass substrate S with a biaxial tilt (vertical and tilt movement) over the entire area of the broken glass substrate S with high accuracy, as illustrated in FIG. 9B, and

Page 22 200415793 V. Description of Invention (15) '-

What is required is not to increase the actual accuracy of the waves on the exposed surface of the glass substrate S. In other words, usually—high resolution is caused by jealousy of waves or uneven thicknesses. Recently, commercially available broken glass substrates with ordinary flatness cannot be used. However, using the present invention, high-resolution complete light The resist pattern can be obtained over the entire area of the exposed surface. For example, as described above, the defects on the substrate surface can be corrected during exposure so that the exposed surface is within the DOF range of the system. Therefore, the focused surface and exposure two are approximately coincident with each other. Even if the exposure pattern is formed by having a small DOF exposure, the exposure pattern formed by the light on the exposure surface may be blurred and / or lost on the surface, especially, glass-based objects such as displays).基板 Substrates with large fluctuations or uneven thicknesses (in addition, the difference of the proven displacement is to flatten the substrate direction and the scanning direction are calculated. ^ 9 can be calculated by considering the glass y U σΤ as low as i · 9un] or less than the purpose, And the implementation level and Fanmu are poor. Therefore, according to the exposure method of the present invention, * ^ ΚΓί? Stimulates the laser to achieve a resolution of 0.5 on the existing glass substrate. According to the present invention, As mentioned above, there is a large change in the special direction (that is, the direction of the surface of the glass substrate on the mouth that intersects at right angles). Because of 1, the glass substrate is pulled out during the manufacturing process, which can be changed in a large way. The position of the surface of the glass substrate in the h-light field: lower. In addition, the waves on the short-side substrate of the exposure field of the glass plate and the tilting can make the exposure field corresponding to the glass and Meng Zhili to adjust the focus and further

Page 23 200415793 V. Description of Invention (16). Fig. 11 shows a block diagram of the control system of the control device 21 in Fig. 1. The substrate device 21 includes an input port 31, an operation portion 32, a correction amount setting portion 33, a brake driving portion (voltage setting portion) 34, a control portion CCPU) 35, and a memory 36. At input port 31, the current from the PSD 20 wheels (digitized by the A / D converter) is input here. The operating portion 32 obtains the displacement amount based on the output of the PSD 20 in the turn. The correction amount setting section 33 sets a correction amount (brake 16) corresponding to the displacement amount obtained by the operation section 32. Brake drive port (3 cutters 3 4 Operate the brake 1 6 according to the correction amount of the correction amount setting section 33. Control f-point (CPU) 35 controls the operation section 32, the correction amount setting section 33 and the actuator driving section 34 operation. The memory 36 stores the operation result of the operation portion 32, that is, the wave or thickness of the glass substrate S is uneven or unevenly distributed. A display device 37 is connected to the control portion 35 through an interface (not shown) when needed. # $ 2D 、 2 The output current of 〇 is A / D-converted and operated by the operation section 32. The machine is converted to the correction amount under the control of the control section 35. The direction and displacement of the glass substrate, the thickness t, and the uneven thickness can be calculated.结 # p The exposure surface of the main substrate S is located within the surface of the technical shirt defined by the imaging optical system 14 = D0F, as shown in Figure 4B. +-^ Ϋ Sheep's detailed description according to the wave direction and displacement Each pressure :: close: The direction and amount of shrinkage are added, and the voltage corresponding to the power extension element 16 > Erli is output by the voltage setting section 34 to each pressure located within the range of D0F \ and after the rotation is implemented. All points on the surface can be found in the chapter q. 1 in 2 since the thickness measurement sensor or PSD 20 in each

Page 24 200415793

It is output during a predetermined period, and moves the exposure field in the Y direction, and moves in the X direction in FIG. 6 at a predetermined speed. The displacement distribution (direction or amount of wave or thickness unevenness) in the exposure field is calculated from the output (A / D conversion) of the PSD 20, as illustrated in Figure 12 (S 1 1) below. # The displacement distribution of the exposure field obtained from SI 1, & and! ^ Of the correction amount z are represented by the following formula: Z2 ax + b is specified by the linear approximation value of the least square (S12) (plane). The correct amount of the cup root / m2 is 2 ", b), and the tilt and vertical movement of the glass supported by the stage 15 can be obtained. 16 :: = Get = the amount of oblique straight movement, η shrinkage ) Aligned on the stage 15 in a predetermined method, the: δ :: amount (expanded amount / received (S 1 4). 3 working direction can obtain the work (expanded amount / contracted amount) obtained by each piezoelectric element 16 is converted The voltage setting part of the D / A converter is extremely large, the direction (expansion / contraction), and the amount is small and large. The small voltage is prepared for use as a piezoelectric element. 16. The braking benefit driving part) 3 4Supply to—According to another-linear approximation algorithm, once the vertical movement amount is determined by the average +, the slope is determined by the maximum and minimum of the focal surface of the exposed surface of the substrate S. Each range of the light field is controlled, 、、. Control the tilt and / or vertical movement during exposure (real time) or stepping operation f =, the detection of waves can be exposed _ the steam knowledge. Because all the waves do not need to be 200415793

5. Description of the invention (18) Detection first, detection time can be reduced. Therefore, in the exposure apparatus of the present invention, the substrate stage holding the substrate is moved vertically and horizontally independently, as if the exposed surface of the substrate can be flattened. The exposure pattern can therefore be correctly formed on the glass substrate of the liquid crystal display in the DOF range of the optical imaging system, or on a substrate having a wave or uneven thickness, especially the uneven thickness of 疋 k. In other words, the exposure pattern without blurring can be formed on the surface of the substrate or on the exposed surface.

The exposure device and method have been described above. However, the present invention can also be applied to a processing device such as a laser crystallization device. Examples of different applications are described below. In the application, the processing can be performed without focusing, regardless of the wave / goodness on the substrate surface. The method is to make the relative position (distance) of the exposed surface of the substrate. Objects and projection surfaces are within the DOF range of the imaging optical system. Figure 13 shows the structure of the crystallization device. The crystallization device 53 in FIG. 13 has an excitation laser light source 52, a mask, a port 5 3 ′, a stage driving part 5 4, a substrate stage 5 5, a Miao optical system 5 6, a correction detection / regulation part 5 7, and a substrate. Detection section 5 8 and control section 5 9 and so on. The excitation laser light source 52 is arranged outside the annealing room (not shown), which generates a wavelength; I = 248nm KrF excitation laser beam.

— Excited laser beam Self-excited laser light source 52 is introduced into the interior of the annealing chamber (not shown). In the annealing chamber, when the thin-film semiconductor substrate is placed on the substrate stage 55, the substrate stage 55 can be moved in a two-dimensional horizontal plane. a μ mask 2. 5 3 The women's volleyball team is on the substrate table 5 5. When a phase shifter is placed on the mask, the upper guard can move on a one-dimensional horizontal plane, which is not shown in the figure. Masking table

Page 26 200415793

The configuration of I3 is only with the laser beam of the phase shifter outer edge contactor.俾 will not be cut and transferred to the image shift stage "section 54 to adjust the positions of the substrate stage 55 and the mask stage 53, and scan the rhenium and fluorene semiconductor substrate lengthwise. , 4: == 56 of the mirror 56 "plus the self-excitation laser light source 52, the plate S of the S, and the excitation laser is incident on the thin film semiconductor substrate / light surface through the mask M. The substrate s is determined by self-scanning The system 56 instructs each beam to be scanned in the width direction.

The k-positive detection section 57 is an optical sensor for detecting a correction condition of a target pattern (not illustrated) of a correction mark on the side of the phase shifter and the plate S. ^ The substrate detecting portion 58 is composed of a plurality of light sensors, and these sensors are in a substrate stage 55 to be exposed to a surface. The substrate detection section 58 detects the placement state of the substrate S on the substrate table 55 by a transfer arm provided in an annealing chamber (not shown). The control section 59 controls the drive section 54, the scanning optical system 56, and the excitation light source 5 2 'in response to the signal from the substrate detection section 58 and the signal from the correction detection section 57. Although not shown, the control of the substrate stage 55 and the mask stage 5 3 in the control section 59 is driven by the stage driving section 54, and includes a tilt adjustment mechanism for

The plane direction 疋 also includes the substrate s and the mask μ, that is, the stage 15 and the brake (piezoelectric element) 16 are shown in FIG. 1. That is, the operation of the crystallizer shown in Fig. 13 is as follows. When the substrate S is placed on the substrate table 55 by the transfer arm, the substrate s on the substrate table is placed on the substrate table by the substrate detection section 58 and the control section 59 is notified. according to

Page 27 200415793 V. Description of the invention (20) This point control part 5 9 controls the drive part 5 4 of this station. The console section 59 drives the console section 54 to scan the substrate table 55 and the mask table 53 along the length of the base shirt, and they cross the correction detection device π.

The k system part 5 9 uses the test correction mark (Fig. 4) to adjust the correction state and the target pattern Rp (Fig. 14) detected by the correction measurement part 57 at the same time. It is driven by the console 4 7 knife 54 2 in the control. Next, the stage driving section 54 adjusts the position of the substrate stage 55 # to set each right sign M K in the corresponding figure of the target pattern rp: Yang Er as shown in FIG. 14. If the correction mark MK or the target pattern RP is distorted, the tilt of the thin-film semiconductor substrate or the mark M needs to be corrected by the tilt adjustment mechanism. When the adjustment of the correction between 1 and the substrate S has been completed, the excitation laser light source 52 and the scanning optical system 56 are controlled by the control portion 59 to apply the excitation laser beam to the exposure surface of the substrate s according to the symbol μ. At the same time, (or at a predetermined timing) the positions of the substrate stage 55 and the mask stage 53 (in the longitudinal direction) are changed, and the stage driving section 54 straddles the correction detecting section 57. The exposed surface of the substrate s is then crystallized. Fig. 15 is a schematic diagram of an example of a laser annealing apparatus capable of processing without defocusing. The processing can be carried out by the relative position (distance) of the exposed surface of the substrate, irrespective of the wave distribution of the substrate surface, that is, the processed object and the projection plane defined by the imaging optical system are located within the DOF range of the imaging system. The laser annealing device 151 is the same as the crystallizing device in FIG. 13 except that the masking table 53 has been omitted. Marks M and 53 are set on the masking table 53 and the correction detection section 57 in the crystallizing device in FIG. 13. The structure of the control section 59 is modified. Therefore, the same or similar components as those shown in Figure 13 are listed in the same code.

Page 28 200415793 V. Description of the invention (21)

The description is simplified. In the laser annealing apparatus of Fig. 15, the following control operations are performed. The control section 59 has been modified to implement that when the substrate S has been placed on the substrate table 55 by the transfer arm, the placement state of the substrate S of the substrate table 55 is notified from the substrate detection section 5 8 to the control section 5 gt According to this notification, the substrate table 5 5 The substrate driving part 5 4 moves, and the Rimage board is under the control of the control part 59. & Thereafter, the laser light source 52 and the scanning optical system 56 are controlled by the control section 59, and the relationship in the position of the substrate S is adjusted at the same time. In other words, the excitation laser beam is applied to the exposed surface of the substrate S, and the substrate stage 5 5 is moved by the substrate driving portion 54 in the length direction of the substrate S. As described above, the present invention can be applied to the crystallization device in FIG. 13 and the laser annealing device in FIG. 15. Qe

Area (substrate surface, although not mentioned, formation and exposure-formation of photoresist layer TFT pattern on the film (thin, a predetermined pattern is formed in a positive state, such as a predetermined liquid permeability, and adding a surface can be annealed) Processing on the substrate (processed object) (ie the exposed surface) has a uniform depth. The combination of semiconductor patterns can be obtained by using a thin f image (M 0 S-TFT, ie, thin film transistor) of the semiconductor on the substrate in advance to obtain the 'coming mark M' Through the surface of the photoresist layer (film substrate), the glass substrate formed thereon is formed, and the opposite substrate thereon has been prepared at a relative position in a predetermined space with waves and uneven thickness. An optoelectronic substrate is inverted and can be arranged between the substrates. &Amp; spacer between substrates; drive circuits. A liquid crystal panel is then constructed.

Page 29 200415793 Brief Description of Drawings Fig. 1 is a schematic diagram of an example of an exposure apparatus having a characteristic of the present invention. Figure 2 shows the uneven sentence distribution of the thickness of the object to be exposed. Fig. 3 is a schematic illustration of the three-dimensional exposed surface of an object in Fig. 2. Figures 4A and 4B are diagrams illustrating the relationship between the scanning direction and the displacement difference of an exposure field. Scanning an exposure field in the Y direction Scanning in the X direction according to the present invention According to a feature of the present invention FIG. 5 is a diagram illustrating an example of an exposure method in comparison with an embodiment of the present invention. Fig. 6 is a schematic illustration of an example of the exposure method. An exposure field is depicted. Fig. 7 is a schematic diagram illustrating an example of an exposure method, and tilt and vertical movements are performed simultaneously. Figures 8A and 8B are schematic diagrams illustrating the effects of tilt and vertical motion described in Figure 7. Figures 9A and 9B are schematic diagrams illustrating the relationship between the tilt of the exposure field and the rotation axis under the conditions described in Figures 8A and 8B. Figures 10A and 10B are schematic diagrams illustrating an example of the obvious wave plane distribution obtained as a result of the tilt control in Figures 9A and 9B. FIG. 11 is a schematic view showing an example of a control device that can be used in the exposure device of FIG. 1 and FIG. 12 is a schematic view showing a method for setting a work amount (control amount) of a piezoelectric element in the tilt and vertical movement of the present invention An example. Fig. 13 is a schematic view showing an example of the planarization mechanism of the present invention applied to a laser crystallization device. Figure 14 is a schematic illustration of the operation of the crystallized laser device in Figure 13 (control

Page 30 200415793 Simple illustration of the system). Fig. 15 is a schematic diagram illustrating an example of the planarization mechanism of the present invention applied to a laser annealing apparatus. FIG. 16 is an example of a schematic display distribution and scanning exposure device. Description of component symbols: 1 exposure device 6 optical system 9 bus bar 10 distortion condition detector 11 light source 12 illumination light system 13 mask stage 14 image optical system 15 substrate stage 16 brake (piezo element, 17 support part 18 semiconductor laser Device 20 PSD (Position Sensing Device) 21 Control Device (Computer) 21 Base Unit 31 Input Port 32 Operating Section 33 Correction Setting Section 34 Brake Driving Section (Voltage Setting Section) 35 Control Section 36 Memory 37 Display Device 52 Laser Exciter Light source 53 Mask stage 54 Drive section 55 Substrate stage 56 Scanning optical system 56A Mirror 57 Calibration detection section 58 Substrate detection section 59 Control section 71, CPU, central processing unit 72, RAM random access memory 73, ROM read-only memory Volume 74 Exposure area determination section

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Claims (1)

200415793 VI. Scope of patent application 1 · An exposure method that exposes a predetermined pattern and continuously or subsequently moves the exposure area of a substrate to be exposed includes moving the exposure area in the direction of a wave existing on the exposure surface of the substrate. 2. The method according to item 1 of the patent application range, wherein the waves on the exposed surface of the substrate are caused by a change in the thickness of the substrate. 3. The method according to item 1 of the scope of patent application, wherein one side of the exposure area in a direction where the right angle intersects with the moving direction is longer than one side in the moving direction. 4 · The method according to item 1 of the scope of patent application, in which the substrate to be exposed is a glass substrate, and the thickness variation of the glass substrate is very large in a specific direction. The direction of the thickness change is substantially at right angles to the direction of the glass substrate pulled out during manufacture. Caused by the cross. 5. The method according to item 1 of the scope of patent application, further comprising: detecting the displacement of the exposed surface of the substrate; controlling the tilt and height of the substrate surface according to the detected displacement; and along the direction of the waves existing on the exposed surface of the substrate Moving the exposure area where the tilt of the substrate is controlled. 6 · The method according to item 1 of the scope of patent application, wherein the detection receives a reflected light beam 'added to the substrate surface and measures the wave or distortion state of the substrate surface. 0 7. An exposure device comprising a mechanism for measuring the displacement of the exposed surface of the substrate to be exposed 'to the exposure-predetermined map t' and continuously or subsequently moving the exposure area on the substrate, the device further comprises a mechanism for The exposure area is moved in the direction of the wave existing on the exposure surface. Page 33 200415793 6. Application patent scope 8. — An exposure device including a mechanism to detect the displacement of the exposure surface of the substrate to be exposed, and a device to control the tilt and height of the base surface to expose a predetermined pattern, While continuously or subsequently moving an exposure area on the substrate, the device further includes controlling the tilt and height of the substrate surface according to the detected displacement, and moving the exposure area in a specific direction, in which the causing surface corresponds approximately to the substrate surface Substrate thickness variations occur in large amounts at any time during exposure. 9. For the device in the scope of patent application No. 8, in which at least one of the directions is used as the tilt axis when the substrate surface is tilted, because the thickness varies greatly in that direction, and one direction changes at a right angle and with a large thickness. Directions crossed. 10. The device according to item 9 of the scope of patent application, wherein when the inclination of the substrate surface is controlled, the four corners of the table on which the substrate is placed are moved vertically. 1 1. An exposure device that exposes a predetermined pattern, and continuously or subsequently moves an exposure area of a substrate to be exposed. The device includes a device to move the exposure area in a specific direction, which often changes the thickness of the substrate. i 2. The device according to item 11 of the scope of patent application, wherein one side of the exposure area in a direction where the right angle intersects with the moving direction is longer than one side in the moving direction. 1 3. The device according to item 11 of the scope of patent application, further comprising: a device for detecting the displacement of the substrate surface; and a device for controlling the slope and height of the substrate surface; wherein the slope and height of the substrate surface are based on Detected Displacement Controlled Page 34 VI. Application of Patent Scope System ′ The exposed surface is corresponding. Make it larger than the substrate surface at any time during the exposure time. 1 · If the patent application is oblique, there is at least ~ 13th device, in which the tilt of the substrate is greatly changed, and the direction is used as an axis of tilt. Thickness in this direction 15 · If applying for a patent ~ Direction ... At right angles, it intersects with a direction where the thickness changes greatly. When the device is tilted, the device according to item 14 of the inverse range, wherein a kind of treatment is arranged on the surface of the control substrate, and is arranged in the four corners of the σHai mouth to move vertically. The detection device is pushed; the device of the object on the table includes: a retaining device, which is provided with a wave or a thickness inhomogeneity on the surface of the object; the direction of the extension is intersected by the private institution at a right angle to the surface of the object Corners, and Sa Wu ’s directional displacement, which is provided in at least four directions of the retaining device; and independently displaced to cancel one of the displacements claimed by the detection device. 7. For application only: Fan control: the% support mechanism , Keep the amount of movement of the device. The predetermined uniaxial clothes setting of the retaining device 'is in which the control device is under protection. Axial direction 'controls the movement of the retaining device of the support mechanism. 18 · If the retaining device of the supporting mechanism is installed in item 16 of the patent application, the control device controls the plane direction-the biaxial direction. θ crosses the retention device at right angles Page 35