TW200303624A - Organic led device and manufacturing method of the same - Google Patents
Organic led device and manufacturing method of the same Download PDFInfo
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- TW200303624A TW200303624A TW092101961A TW92101961A TW200303624A TW 200303624 A TW200303624 A TW 200303624A TW 092101961 A TW092101961 A TW 092101961A TW 92101961 A TW92101961 A TW 92101961A TW 200303624 A TW200303624 A TW 200303624A
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- Prior art keywords
- organic light
- emitting diode
- light emitting
- anode
- tft
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 24
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 230000010485 coping Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 38
- 239000010408 film Substances 0.000 description 33
- 239000011799 hole material Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 210000004508 polar body Anatomy 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011575 calcium Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 201000001881 impotence Diseases 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
200303624 ⑴ 玖、發明說明 (發明說明應敘明：發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明) 技術領域 本I月係關於-有機發光：極體，具體而言，係關於採 用頂部發光結構且適於擴大其面積的有機發光二極體裝置 及關於製造該有機發光二極體装置的方法。 先前技術 一由於有機發光二極體元件的回應速度很快，且其係自發 光=件，因而就·希望將有機發光二極體元件用於顯示器裝 置時，能獲得一種也具有寬視角的優秀平面顯示器裝置。 因此，對於有機發光二極體元件應用於平面顯示器裝置， 而取代液晶顯示器裝置的情況進行了檢測。 在私上述有機發光二極體元件應用於平面顯示器裝置的 情形中，與液晶顯示器裝置類似，也可採用動態矩陣驅動 去員知對於應用動態矩陣驅動方法的有機發光二極體 衣置其發光結構可採用頂部發光結構或底部發光結構。 圖9顯示一有機發光二極體裝置的斷面圖，其採用迄今已知 的頂部發光結構。 圖9所示的有機發光二極體裝置，係在一玻璃基板上形成 由P型摻雜多晶矽（P〇ly-Si)組成的一薄膜電晶體（TFT)結 構82而構成。如圖9所示，藉由絕緣膜84，tft結構以與 其上部結構隔離。此外，在絕緣膜84的上部分上，形成由 金屬’如鉬（Mo)、鎳（Νι)和鉑（Pt)構成的反射式陽極86。在 反射式陽極86的鄰近上層上，形成電洞注入層88。此外， 在電洞注入層88的上層上，形成電洞傳輸層9〇及電子傳輸層 200303624 (2) 92。因此’構成的有機發光二極體裝置能夠發出有機發光 一極體元件的光。在圖9所示的傳統有機發光二極體裝置中 ”、員不在電子傳輸層92的上層上進一步形成的陰極94係半 透明。該陰極94可傳送有機發光二極體產生的光束，並供 給電子。例如，陰極94可由功函數（w〇rkfuncti〇n)值小的材 料構成，如鋁（A1)、鈉（Na)、鈣（Ca)、銀化鎂（MgAg)、鋇（Ba) 及夂（Sr)。在陰極94上，形成緩衝層96及玻璃保護層98。如 此即構成了頂部發光結構。 與底部發光類型的有機發光二極體裝置相比，由圖9所示 之傳、、、先頂部發光結構組成的有機發光二極體裝置效率更高 ，其中無需改變丁FT的尺寸即可提升開口率(―她mi〇) 。然而，在構成頂部發光類型的有機發光二極體裝置的情 形中，必須使上述陰極94形成為非常薄（約1〇 薄膜， 以賦予其透明度。因此，陰極94的不利之處在於其電阻必 定較高。 由於上述陰極94的電阻較高，即使大面積顯示器裝置係 採用頂部發光類型的有機發光二極體裝置製成，但因陰極 本身具有電阻，就使螢幕的端部至其中部的陰極電壓下降 必然較大。因此，隨著有機發光二極體裝置面積的擴大， 由於螢幕端部至螢幕令部存在電屢下降，因而無法對其施 加驅動TFT所需的電壓。為了預防由上述陰極％造成的電壓 下降，也可在陰極94上進一步形成一低電阻層（如ιτ〇)。 然而，雖然ίΤΟ具有導電性，但也無助於此，甚至與金屬 (3) (3)200303624200303624 玖 玖, description of the invention (the description of the invention should state: the technical field to which the invention belongs, the prior art, the content, the embodiments, and the simple description of the drawings) TECHNICAL FIELD This month is about-organic light-emitting: polar body, specifically, The invention relates to an organic light emitting diode device using a top light emitting structure and suitable for expanding its area and a method for manufacturing the organic light emitting diode device. In the prior art 1, since the response speed of the organic light emitting diode device is very fast, and it is self-luminous, it is hoped that when the organic light emitting diode device is used in a display device, it can obtain an excellent type that also has a wide viewing angle. Flat display device. Therefore, the case where an organic light emitting diode element is applied to a flat display device instead of a liquid crystal display device is examined. In the case where the above-mentioned organic light-emitting diode element is applied to a flat display device, similar to a liquid crystal display device, a dynamic matrix driving can also be used to know the light-emitting structure of an organic light-emitting diode applying the dynamic matrix driving method. A top-emitting structure or a bottom-emitting structure can be used. Fig. 9 shows a cross-sectional view of an organic light emitting diode device using a top light emitting structure known hitherto. The organic light emitting diode device shown in FIG. 9 is formed by forming a thin film transistor (TFT) structure 82 composed of P-type doped polycrystalline silicon (Poly-Si) on a glass substrate. As shown in Fig. 9, the tft structure is isolated from its upper structure by the insulating film 84. Further, on the upper portion of the insulating film 84, a reflective anode 86 made of a metal 'such as molybdenum (Mo), nickel (Ni), and platinum (Pt) is formed. On the adjacent upper layer of the reflective anode 86, a hole injection layer 88 is formed. In addition, on the upper layer of the hole injection layer 88, a hole transport layer 90 and an electron transport layer 200303624 (2) 92 are formed. Therefore, the organic light emitting diode device constituted by the light emitting device can emit light from an organic light emitting diode element. In the conventional organic light emitting diode device shown in FIG. 9, the cathode 94, which is not further formed on the upper layer of the electron transport layer 92, is translucent. This cathode 94 can transmit the light beam generated by the organic light emitting diode and supply it Electron. For example, the cathode 94 may be composed of a material having a small work function (workfunction) value, such as aluminum (A1), sodium (Na), calcium (Ca), magnesium silver (MgAg), barium (Ba), and夂 (Sr). On the cathode 94, a buffer layer 96 and a glass protective layer 98 are formed. This constitutes a top emission structure. Compared with a bottom emission type organic light emitting diode device, as shown in FIG. The organic light-emitting diode device composed of a top-emission structure is more efficient, in which the aperture ratio can be increased without changing the size of the D-FT. However, organic light-emitting diodes that constitute the top-emission type In the case of a device, the above-mentioned cathode 94 must be formed to be very thin (about 10 thin films to give it transparency. Therefore, the disadvantage of the cathode 94 is that its resistance must be high. Since the above-mentioned cathode 94 has a high resistance, even Large area display The device is made of a top-emission type organic light-emitting diode device, but because the cathode itself has resistance, the cathode voltage from the end to the middle of the screen must be greatly reduced. Therefore, with the organic light-emitting diode device As the area is enlarged, the voltage required to drive the TFT cannot be applied to the screen from the end of the screen to the screen commander. In order to prevent the voltage drop caused by the above cathode%, a low voltage can also be formed on the cathode 94. Resistive layer (such as ιτ〇). However, although ΤΤ is conductive, it does not help, even with metal (3) (3) 200303624
相比，ΙΤ〇的電阻反而更高。因此，利用有機發光二極體元 件’形成具有大螢幕（具體而言’約大於十英寸的大榮幕) 的有機發光二極體裝置時，已知傳統的頂部發光構造難以 保證螢幕顯示器的平坦度’並且在螢幕擴大時會更明顯。 圖10顯示陰極共用模式的驅動器電路100,其採用Ρ-型驅 動器TFT，且係用於形成頂部發光結構的情形中。在圖1〇 所示的傳統驅動器電路100中，係採用P-型驅動器TFT 102 。如圖10所示，驅動器TFT 1G2的汲極電極咖與有機發光 二極體元件104連接，源極電極⑽設置為共用電位，而驅 動器電路100係在陰極共用模式下驅動。 此外，驅動HTFT的閘極102§與開關TFT1〇8連接，如此 即構成選擇性驅動有機發光二極體元件1〇4的結構。頃知在 驅動器TFT 102的飽合區’其源極與汲極之間的電流此與 圖10所不的頂部發光結構中的（Vgs_Vth)2約成比例關係。此 處的Vgs係為閘極與源極間的電壓’而vth係臨界電壓。如 上所述，由於在傳統的頂部發光結構中，係由vgs的 函數知出，且採用陰極共用模式，因此TFT的Vgs變化可應 對有機發光二極體的特徵變化。 表1顯不可採用的TFT結構，以防止Vgs隨有機發光二極 體的特徵變化而變化。在表丨中，參考符號「圈」表示可應 對有機發光二極體兀件之特徵變化的結構，而參考符號 「又」則表示預計不能應對有機發光二極體元件之特徵變 化的結構。 (4) 200303624 [表1] η-型丁FT P-型 TFT 陽極共用 ，，圈丨’ ”又，丨 陰極共用 ”又丨， ，’圈，， 僅考慮上述特徵變化時，即使n TFT中的任—個，^ 即使知用η-型TF 丁與卜型 一模式 9 ^極共用模式和陰極共用模式中的任 欽而^在以:了^應對有機發光二極體元件㈣徵變化。 情二—成陽極共用_ 曰出見另一不利情況，下面將會說明。 圖11顯示利用η_型驅動 中，弓㈣哭^ ^TF丁幵乂成除極共用結構的情形 r 驅動态電路的斷面結構。如圖n所千 發光纴椹由山 s 1所不，在傳統的頂部 將二！ 效率及發光效率明顯偏低，故不能 :电阻必咼無疑的陰極配置為下部電極。 带：：二圖11所不’在利用n_型tft，採用陽極共用結構 結構的情形中’就需要在一像素内形成陽極 杜、陰極⑽的—接觸孔洞。這會降低有機發光二極體元 108之像素中的開口率’並使裝置結構複雜化。因而，如 此形成的接觸孔洞在效率、生產力及成本方面都沒有現* 思義。另-方面，認為只採用使用n•型m的陰極共用模二 ，热法限制Vgs隨有機發光二極體的特徵變化而變化，並且 顯示器特性也較差。 因此，4今始終需要一種有機發光二極體裝置，其能 夠實現螢幕的擴大，同時又能保持頂部發光結構的高： 口率 〇 -9- (5) 200303624 a ’也始終需要一種製造有機發光 ，該裝置能夠實現螢幕 ~極體裝置的方法 構的高開口率。 此保持頂部發光結 發明内容 ^本發明健於上述傳統問題”造 係提供—種有機發光二極體裝置’其能夠實現=項目的 ，同時又能保持頂部發光結構的高開口率❹的擴大 本發明的另-項目的係提供—種製造 置的方法，該#詈〜奶杂 么光一極體裝 月匕σ @現螢幕的擴大， 部發光結構的高開口率。 才又此保持頂 本發明係因存在的上述問 並用社㈣〜出。本發明採用陽極 、。中在頂部發光結構中採用型驅動器丁F 時陽極與有機發光二極體, σ 同 由動態矩陣結構驅動。的设數個像素連接，該裝置 在本發明中，利用卜型驅動器咖，在有機發光二極體穿 置中採用陽極共用結構，可使有機發光二極體裝置的特徵 變化對VgS的影響最低，並且該特徵可保持穩定。 此外，在本發明中，陽極並非與共用電極（其係在構成驅 動為TFT的相同平面上形成）連接形成，而是在共用電極 (其在驅動器TFT上形成的絕緣膜上）的相同平面上形成以 使其平坦。陽極係由低電阻材料構成，如金屬八丨、沁和c〇 利用依據本發明形成的陽極，可降低與複數個像素連接 的共用電極之電，因而可以形成大面積的有機發光二極 -10- 200303624 ⑹ 體裝置。 、—具體而言，本發明利型驅動器TFT，同時採用陽極與 硬數個像素連接的陽極共用結構，因而就可簡化結構，而 採用傳統結構卻無法避免結構的複雜化。此外，在本發明 中，陽極並非針對每一像素而形成，而是以線或面的^式 與之連接，因而陽極可用作共用電極。 具體而t，依據本發明，在基板上構成一有機發光二極 體破置’其包括.· -開關TFT和一驅動器tft，每個均在基 板上形成；對於每一像素，在該基板上形成的一有機發= -極體70件’二者間置入一絕緣膜，該有機發光二極體元 件與該驅動器TFT連接;與一共用電極連接的一陽極;及一 陰極’其連接該驅動器TFT與該絕緣膜上形成的該有機發光 二極體元件’其中該陽極係連接複數個像素而構成。 在本發明的有機發光二極體裝置中，驅動器τρτ最好以 心型非晶矽及η-型多晶矽中的任一種用作活動層。本發明的 有機發光二極體裝置，最好係由至少一個發光部分及一個 電子傳輸部分組成，且各自均係部分自洽形成。本發明的 有機發光二極體裝置最好具有頂部發光結構。 在本务明中’還提供了一種在基板上製造有機發光二極 體裝置的方法，其包括以下步驟：在基板上形成—開關ΤΗ 及一驅動器TFT ·’形成塗佈該開關打丁和該驅動器tft的 一絕緣膜·’在該絕緣膜上形成複數個像素共用的_陽極， 用作-共用電極·’在該陽極上決定一區域，其用於形成與 -11- 200303624In comparison, the resistance of ITO is higher. Therefore, when using an organic light emitting diode element to form an organic light emitting diode device having a large screen (specifically, a "big screen larger than about ten inches"), it is known that the conventional top light emitting structure is difficult to ensure the flatness of the screen display. Degrees' and will become more apparent as the screen expands. FIG. 10 shows a driver circuit 100 in a cathode common mode, which uses a P-type driver TFT and is used in the case of forming a top emission structure. In the conventional driver circuit 100 shown in FIG. 10, a P-type driver TFT 102 is used. As shown in FIG. 10, the drain electrode of the driver TFT 1G2 is connected to the organic light emitting diode element 104, the source electrode ⑽ is set to a common potential, and the driver circuit 100 is driven in a cathode common mode. In addition, the gate electrode 102§ driving the HTFT is connected to the switching TFT 108, so that a structure for selectively driving the organic light emitting diode element 104 is formed. It is known that the current between the source and the drain of the saturation region 'of the driver TFT 102 is approximately proportional to (Vgs_Vth) 2 in the top light emitting structure shown in FIG. 10. Vgs here is the voltage between the gate and source 'and vth is the threshold voltage. As mentioned above, in the traditional top-emitting structure, which is known from the function of vgs and adopts the cathode common mode, the Vgs change of the TFT can respond to the characteristic change of the organic light-emitting diode. Table 1 shows the unusable TFT structure to prevent Vgs from changing with the characteristics of the organic light emitting diode. In Table 丨, the reference symbol “circle” indicates a structure that can cope with a characteristic change of an organic light emitting diode element, and the reference symbol “in turn” indicates a structure that is not expected to cope with a characteristic change of an organic light emitting diode element. (4) 200303624 [Table 1] η-type but FT P-type TFT anodes are shared, and the circle is common, and the cathode is shared, again, and the circle is only considered when the above characteristics change, even in the n TFT Even if it is known to use η-type TF D and Bu type one mode 9 ^ in the common mode and cathode sharing mode ^ in order to respond to changes in organic light-emitting diode elements. Situation two-common anode sharing_ I see another unfavorable situation, which will be explained below. Fig. 11 shows a cross-sectional structure of a driving state circuit when the π-type driving circuit is used in the η_-type driving, and the TFTF is divided into a common structure. As shown in Figure n, the luminous 纴 椹 is not seen by the mountain s 1 and will be two at the top of the tradition! The efficiency and luminous efficiency are obviously low, so it cannot be: the cathode must be configured as the lower electrode without resistance. Band: What is not shown in Fig. 11 'In the case of using the n_-type tft and adopting the anode common structure structure', it is necessary to form the anode contact and cathode contact holes in one pixel. This reduces the aperture ratio 'in the pixel of the organic light emitting diode element 108 and complicates the device structure. Therefore, the contact holes formed in this way have no meaning in terms of efficiency, productivity and cost. On the other hand, it is considered that only the cathode common mode 2 using n-type m is used, and the thermal limit Vgs varies with the characteristics of the organic light emitting diode, and the display characteristics are also poor. Therefore, there is always a need for an organic light emitting diode device that can expand the screen while keeping the top light emitting structure high: Port rate 0-9- (5) 200303624 a 'Always always needs a manufacturing organic light emitting diode This device can achieve the high aperture ratio of the screen-polar device method. SUMMARY OF THE INVENTION The present invention maintains the top light emitting junction. The present invention is robust to the above-mentioned conventional problems. "The system provides an organic light emitting diode device which can be implemented = an item, while maintaining the high aperture ratio of the top light emitting structure." Another aspect of the invention is to provide a method for manufacturing the device. The # 詈 〜 奶 杂 么 光 一 极 体 装 月 刀 σ @enlargement of the current screen, the high aperture ratio of the light-emitting structure. Only to maintain the present invention This is because of the above-mentioned problems. The anode and the organic light-emitting diode are used when the anode and the organic light-emitting diode are used in the top light-emitting structure of the present invention, and σ is driven by a dynamic matrix structure. In the present invention, the device uses a pixel driver to use an anode common structure in the placement of the organic light emitting diode, which can minimize the change in the characteristics of the organic light emitting diode device on VgS. Stable. In addition, in the present invention, the anode is not connected to the common electrode (which is formed on the same plane constituting the driving TFT), but is connected to the common electrode. The anode (which is formed on the insulating film formed on the driver TFT) is formed on the same plane to make it flat. The anode is made of a low-resistance material, such as metal VIII, Qin, and co. The electricity of the common electrode connected to a plurality of pixels can form a large-area organic light-emitting diode -10- 200303624 ⑹ device. Specifically, the favorable driver TFT of the present invention uses an anode and several pixels at the same time. The connected anodes share a structure, which simplifies the structure, but the traditional structure can not avoid the complication of the structure. In addition, in the present invention, the anode is not formed for each pixel, but in a line or area ^ type and Connection, so that the anode can be used as a common electrode. Specifically, according to the present invention, an organic light-emitting diode is formed on the substrate, which includes a switching TFT and a driver tft, each on the substrate. Forming; for each pixel, an organic light emitting film formed on the substrate =-70 polar bodies; an insulating film is placed between the organic light emitting diode element and the driver TFT; An anode connected to a common electrode; and a cathode 'which connects the driver TFT and the organic light emitting diode element formed on the insulating film', wherein the anode is formed by connecting a plurality of pixels. In the present invention, In the organic light emitting diode device, the driver τρτ preferably uses any one of a heart-shaped amorphous silicon and an η-type polycrystalline silicon as an active layer. The organic light emitting diode device of the present invention is preferably composed of at least one light emitting portion. And an electron-transporting part, and each of them is self-consistently formed. The organic light-emitting diode device of the present invention preferably has a top-emitting structure. The method includes the following steps: forming on a substrate-a switch TFT and a driver TFT; "forming an insulating film that coats the switch driver and the driver tft;" forming a plurality of pixel sharing on the insulating film _Anode, used as a -common electrode · 'A region is determined on this anode, which is used to form and
⑺ 該陽極連接的有機發光二極體元件 發光二極體元件。 %且w裂造方法中， 機發光二極體裝置的步驟最好包括以下步驟：在用^/ :機發光二極體元件的區域周圍形成—突起結構，及 瘵發方法，在該突起結構的一内部， > 發光二極體元件。 自為成部分*阳极 The anode-connected organic light-emitting diode element The light-emitting diode element. In the w-cracking method, the step of the organic light emitting diode device preferably includes the following steps: forming a protrusion structure around the area where the organic light emitting diode element is used, and a bursting method, in which the protrusion structure An internal, > light emitting diode element. Self-contained *
在本發明之有機發光二極體裝置的製造方法中，來 少一個驅動器TFT的步驟，最好包括 ^ 匕秸形成卜型摻雜非晶矽 動層和^型#雜多晶石夕活動層中的任—個。本發明 發光二極體裝置的製造方法’最好係形成一頂料光類 的有機發光二極體裝置。In the method for manufacturing an organic light emitting diode device of the present invention, the step of removing one driver TFT preferably includes forming a doped amorphous silicon moving layer and a #heterocrystalline polysilicon active layer. Any one of them. The method for manufacturing a light-emitting diode device according to the present invention is preferably to form an organic light-emitting diode device.
依據本發明，在-基板上構成—有機發光二極體裝置， 其包括：-開關TFT和-驅動器m，每個均在該基板上形 成；對於每-像素’在該基板上形成的一有機發光二極體 疋件一者間置人—絕緣膜，該有機發光二極體元件與該 驅動器TFT連接；包含—懸突的—突起部分，該突起部分係 圍繞該有機發光：極體元件形成，並從該絕緣膜突出；與 —共用電極連接的-陽極；及_陰極，其連接該驅動器τρτ m緣膜上形成的該有機發光二極體元件，其中該陽極 係連接複數個像素而構成。 依據本發明，還提供了 _種在—基板上製造有機發光二 極體裝置的方法，λ包括以下步驟：在該基板上形成一開 關TFT及一驅動器TFT ;形成塗佈該開關tFT和該驅動器 -12- 200303624 ⑻ 用’·二該絕緣膜上形輸 極體元)形成= 件#起結構，以決定形成有機發光二極體元 件的该£域，猎由墓發 4方法利用该犬起結構，在該陽極 白形成有機發光二極體元件；及利用該突起結構， 地形成塗佈該有機發光二極體元件的—陰極。 實施方式According to the present invention, an organic light emitting diode device is formed on a substrate, which includes:-a switching TFT and-a driver m, each formed on the substrate; for each-pixel 'an organic formed on the substrate One of the light-emitting diode elements is interposed with an insulating film, and the organic light-emitting diode element is connected to the driver TFT; including-overhanging-a protruding portion, the protruding portion is surrounding the organic light-emitting element: the polar element is formed And protrudes from the insulating film; an anode connected to a common electrode; and a cathode connected to the organic light emitting diode element formed on the driver τρτ m edge film, wherein the anode is formed by connecting a plurality of pixels . According to the present invention, there is also provided a method for manufacturing an organic light emitting diode device on a substrate. Λ includes the following steps: forming a switching TFT and a driver TFT on the substrate; forming and coating the switch tFT and the driver -12- 200303624 ⑻ Use '· 二 on the insulating film to form the emitter element) to form a piece of structure to determine the formation of the organic light-emitting diode element. Structure, an organic light emitting diode element is formed on the anode white; and a cathode coated with the organic light emitting diode element is formed using the protruding structure. Implementation
下面將以圖式中的一項具體實施例為基礎詳細說明 本發明’但本發明並不限於該項具體實施例。則顯示有機 發光二極體裝置1()的驅動器電路結構，該裝置採用依據本 么月構成的陽極共用結構。如圖i所示，驅動器電路係由卜 型TFT構成，且其構成方式使^型驅動器tfti2和卜型開關 TFT 14所連接的位置’可驅動有機發光二極體元件μ。在 車乂 4土具體貝施例中’驅動器丁打12和開關TFT 14最好均製 成η-型摻雜型。 ，但疋，在本發明中，也可將驅動器丁FT 12和開關tft Μ 製成摻雜類型互不相同的TFT。現參考圖i，進一步詳細說 明驅動益電路。經電容器18，驅動器叮丁 12的閘極12g與共 用電極20連接。另外，驅動器丁FT 12的汲極電極12d與有機 發光二極體元件16的陰極連接。此外，驅動器TFT丨2的源 極電極12s接地，即形成具有陽極共用結構的構造。 驅動器TFT 12的閘極12g進一步與開關TFT 14的汲極電 極14d連接，開關TFT的源極電極14s與資料線22連接，而其 間極14g則與選擇線24連接，因而可驅動有機發光二極體元 -13- (9) (9)200303624Hereinafter, the present invention will be described in detail based on a specific embodiment in the drawings, but the present invention is not limited to the specific embodiment. The driver circuit structure of the organic light emitting diode device 1 () is shown, and the device adopts an anode common structure formed according to this month. As shown in FIG. I, the driver circuit is composed of a Bu type TFT, and its structure is such that the position 'where the ^ driver tfti2 and the TFT type TFT 14 are connected can drive the organic light emitting diode element µ. In the specific embodiment of the car body, the driver 12 and the switching TFT 14 are preferably made of an n-type doped type. However, in the present invention, the driver FT 12 and the switch tft M can also be made into TFTs with different doping types. Referring now to Figure i, the driver circuit is explained in further detail. Via the capacitor 18, the gate 12g of the driver 12 is connected to the common electrode 20. The drain electrode 12d of the driver FT12 is connected to the cathode of the organic light emitting diode element 16. In addition, the source electrode 12s of the driver TFT2 is grounded, that is, a structure having an anode common structure is formed. The gate electrode 12g of the driver TFT 12 is further connected to the drain electrode 14d of the switching TFT 14, the source electrode 14s of the switching TFT is connected to the data line 22, and the intervening electrode 14g is connected to the selection line 24, so that the organic light emitting diode can be driven. Voxels-13- (9) (9) 200303624
::。圖1所示的驅動器電路構成有機發光二極體裝置的一 ::’而複數個該等像素置於一平面，如此即可啟動動態 矩陣型的驅動模式。 圖2係-半導體結構的斷面圖，其中形成了可用於本發明 之有機發光二極體裝置附的陽極共用結構。如圖2所示， 本發明之有機發光二極體裝置1〇的驅動器電路 體結構，其包含上述WTFT。 成牛^ 具有迄今所知之任何結構的玎丁均可用於本發明。然而 本^月中必須使用含有η-型活動層（其採用陽極乒用 結構)的TFT。此外，在本發明中，為便於製造及提高：產 力’製造的㈣器TFT 12和開關TFT 14最好係為與上述捧 雜類型中相同的之-、然而，若在製造過程中無特別不利 ，處，驅動器TFT 12和開關丁FT 14可製成摻雜類型彼此不 同’且含有卜型活動層的TFT可用作開關TFT 14。 此外，迄今所知的任何材料均可用於本發明中的活動層 。具體而言，在本發明中，可採有η-型多晶矽，也可採用 η型非晶矽（a-Si)。但是，由於限制的特徵變化係與有機發 光一極體元件16的負荷相關，在本發明中，非晶矽用作卜 型活動層更有效。 現參考圖2，進一步說明本發明的有機發光二極體裝置ι〇 。構成的有機發光二極體裝置1〇之驅動器電路，包括在基 板26上構成的開關TFT 14和驅動器TFT 12、將各TFT彼此 連接的線28,及將各TFT與陰極36連接的線30。基板26可由 各種材料組成。例如，由Si〇x、siOxNy、Si及金屬氧化物 -14- 200303624 (ίο) 等材料構成的基板均適用。 在圖2所示的驅動器電路中，藉由絕緣材料（如聚合物）構 成的絕緣膜32，各TFT 12及14與其上部結構隔離。利用迄 今所知的圖案化技術，在絕緣膜32上形成各種線路。例如 ’在絕緣膜32上，在與未圖示的共用電極相同的層面上形 成陽極34，其係由Ai、Mo、Ni&IT〇等導電材料構成，並 以線或面的形式圖案化。此外，陽極34與另一未圖示之像 素的陽極連接，並以陽極共用的模式驅動有機發光二極體 元件16。 . 且 丢"6所處的位置，使有機發光二極體元件μ將其與陽 極34隔離，而其結構允許有機發光二極體元㈣發光了此 夕卜’陰極36經通孔38與線观接，其係形成於絕緣膜的下 9側上亚與驅動器TFT 12的汲極電極12d連接。 別==係採用上述構造，由於在陰極36和陽極34中分 :接觸孔洞形成’因而就有可能 農置的開π率。此外，依據本發明，還？：：體 其中陽極34經共用電極，即 达， 連接。 間早而方便地與另一像素 yr 街於防極34可由平面或蝻#从、若 成’因而可降低陽枉遍士… #高的金>1組 J丨牛低％極34的電阻。因此， 螢幕端部至A中邻&本务明不會引起從 一 Τ #的明顯電壓下降， 尺寸。 牛因而可以擴大螢幕的 圖3顯示本發明之有機發光 3所示，在本發明中，首先， 二極體裝置的製造方法。如圖 如圖3⑷所示，在絕緣基板^ -15- 200303624 簾麵纊買 ------ 上圖案化閘極44，及用於發送資料信號的線（未顯示）。隨 後’如圖3(b)所示，沉積閘極絕緣膜48(由SiNx、SiOy和 SiOxNy等材料組成）及活動層5〇(由多晶矽或非晶矽組成） 乂囷案化處理通道保護層（阻#層）5 2。其次，如圖3 (c) 所不’圖案化源極電極54及汲極電極％，其均有 Mo/Al/MO之類的構造。::. The driver circuit shown in FIG. 1 constitutes a :: 'of an organic light emitting diode device and a plurality of such pixels are placed on a plane, so that a dynamic matrix type driving mode can be started. Fig. 2 is a cross-sectional view of a semiconductor structure in which an anode common structure attached to an organic light emitting diode device that can be used in the present invention is formed. As shown in FIG. 2, the driver circuit structure of the organic light emitting diode device 10 of the present invention includes the above-mentioned WTFT. Adults: Ponderium having any structure known so far can be used in the present invention. However, it is necessary to use a TFT including an n-type active layer (which adopts an anode ping structure) in this month. In addition, in the present invention, in order to facilitate the manufacture and improvement: it is preferable that the productive TFT 12 and the switching TFT 14 are the same as those of the above-mentioned types. However, if there is no special Disadvantageously, the driver TFT 12 and the switch FT 14 can be made into TFTs with different doping types from each other and a b-type active layer can be used as the switch TFT 14. In addition, any material known so far can be used for the active layer in the present invention. Specifically, in the present invention, n-type polycrystalline silicon may be used, and n-type amorphous silicon (a-Si) may also be used. However, since the limited characteristic change is related to the load of the organic light-emitting monopole element 16, in the present invention, amorphous silicon is more effective as a blazed active layer. Referring now to FIG. 2, the organic light emitting diode device ι0 of the present invention is further described. The driver circuit of the organic light emitting diode device 10 is composed of a switching TFT 14 and a driver TFT 12 formed on a substrate 26, a line 28 connecting each TFT to each other, and a line 30 connecting each TFT and a cathode 36. The substrate 26 may be composed of various materials. For example, a substrate made of a material such as SiOx, siOxNy, Si, and a metal oxide -14-200303624 (ίο) is suitable. In the driver circuit shown in FIG. 2, each of the TFTs 12 and 14 is isolated from its upper structure by an insulating film 32 made of an insulating material (such as a polymer). Various patterns are formed on the insulating film 32 using a patterning technique known hitherto. For example, an anode 34 is formed on the insulating film 32 at the same level as a common electrode (not shown), and is made of a conductive material such as Ai, Mo, Ni & IT0, and is patterned in the form of a line or a surface. The anode 34 is connected to the anode of another pixel (not shown), and drives the organic light emitting diode element 16 in a mode common to the anode. The position of "6" allows the organic light-emitting diode element μ to isolate it from the anode 34, and its structure allows the organic light-emitting diode element to emit light. The cathode 36 via the through-hole 38 and The line connection is formed on the lower 9 side of the insulating film and is connected to the drain electrode 12 d of the driver TFT 12. Do not use the above structure. Since the contact holes are formed between the cathode 36 and the anode 34, it is possible to open the farm. In addition, according to the present invention, also? :: body where the anode 34 is connected via a common electrode. Early and convenient with another pixel yr Street on the anti-pole 34 can be flat or 从 #from, Ruocheng 'thus can reduce impotence ... # 高 金> 1 group J 丨 牛 ％% 34 resistance . Therefore, the end of the screen to the A-neighbors & business affairs will not cause a significant voltage drop from a T # size. Fig. 3 shows the organic light emitting device 3 of the present invention. In the present invention, first, a method of manufacturing a diode device is shown. As shown in Figure 3⑷, buy on the insulating substrate ^ -15-200303624 curtain surface 纩 --- patterned gate 44 and the line (not shown) for sending data signals. Subsequently, as shown in FIG. 3 (b), a gate insulating film 48 (composed of materials such as SiNx, SiOy, and SiOxNy) and an active layer 50 (composed of polycrystalline silicon or amorphous silicon) are deposited into a channel protection layer. (Stop #layer) 5 2. Secondly, as shown in FIG. 3 (c), the source electrode 54 and the drain electrode% are patterned, and both have a structure such as Mo / Al / MO.
其後，如圖3(d)所示，沉積絕緣膜58(如SiNx)，並在該 58内形成接觸孔洞60 °隨後，如圖3⑷所示，在本發 的衣仏方法中，形成由導電膜（如ιτο)構成的連接元件61 其與亡部線路連接，後面將予以說明。儘管該連接元件( 可省略仁疋為了使下層側上的驅動器TFT與上層侧上〖 有機I光—極體元件之間獲得良好的電性連接，還是 形成該連接元件。 · 圖4顯。示圖3所示之製造程序之後的製程。在目4所7 的製造私序中，如圖4(a)所示 y- ^ 一 斤在圖3(e)所示之程序中刃Thereafter, as shown in FIG. 3 (d), an insulating film 58 (such as SiNx) is deposited, and a contact hole is formed at 60 ° in the 58. Subsequently, as shown in FIG. The connection element 61 composed of a conductive film (such as ιτο) is connected to the dead line, which will be described later. This connection element is formed despite the connection element (in order to obtain a good electrical connection between the driver TFT on the lower layer side and the organic I photo-polar element on the upper layer side. Figure 4 shows. The manufacturing process following the manufacturing process shown in Figure 3. In the private manufacturing sequence of item 4 and 7, as shown in Figure 4 (a), y- ^ a pound is cut in the process shown in Figure 3 (e).
成的、、Ό ；^上，沉積聚人物 ’、人圖4(b)所示，形成如IT〇、 和ITO/Mo等的導電材料 ， Μ η Μ ^ FI /1 π \ 一 回案化该導電材料層，於邊 就構成圖4(b)所示之有機發弁-一 ,t m ' 一木肢元件的陽極66。此夕j 在接觸孔洞60和孔64的内側 68 ’以穩定陰極與下層側上、^構成連接元科 。儘管該連接元件68也可省略的驅動器™電性連接 連接元件68。 ’但因上述原因仍需形成 如圖4(c)所示，沉積並 隨後，在本發明的製造過程中 -16- (12) (12)200303624 :::-有機或無機絕緣膜67，使有機發光二極體元件 =構彼此^離，於是就形成了構成有機發光 體兀件的區域。ik 士 Μ ^ ，、有機發光二極體元件的界線劃分無關 、刀67可以移除。但是考慮到最終結構的平坦性，口 ::分67,不影響有機發光二極體裝置的功能，就不必： 具移除。 極=顯示在本發明的製造過程中，自洽地形成有機發光二 庠：' 的預處理程序。如圖5所示，在本發明的預處理程 形成-聚合物臈(如光阻)，於是在形成有機發光二極 :几之區域的鄰近位置’圖案化突起結構69。在本發明 ，希望構成的突起結構69具有圖5所示的懸突。但是，。 =效獲得本發明之有機發光二極體元件，突起結構:9 J以為任何形狀。 此外*’在本發明中圖5所示之突起結構69,在下述程序中 成^蔽备遮罩（shadow mask)一起用於自洽地形成各層（如構 小機發光二極體元件的發光部分及電子傳輸部幻的至 (^右側。此外’在本發財’突起結構69防止在沉積過程 罩有機發光二極體元件的蒸發處理）的高溫中使用蔽餐遮 因而可提咼蔽藝遮罩的再用性。 所其次’在本發明製造方法的特定具體實施例中，如圖6 軍:伴=適當的沉積技術(如蒸發處理)，同時利用《遮 卜它區域’可自洽地沉積有機發光二極體元件16 構成的該有機發光二極體元件，包括沉積的陽極Μ上的 m層、發光層及電子傳輸層等。在此情形中，可適 -17- (13) 200303624In the above, Ό, 聚, deposited poly characters', as shown in Figure 4 (b), to form conductive materials such as IT0, and ITO / Mo, Μ η Μ ^ FI / 1 π \ The conductive material layer constitutes the anode 66 of the organic hairpin-a, tm′-limb element as shown in FIG. 4 (b). At this time, the inner side 68 'of the contact hole 60 and the hole 64 is used to stabilize the cathode and the lower layer side to form a connection element. Although the connection element 68 may be omitted, the driver ™ electrically connects the connection element 68. 'But for the above reasons, it is still necessary to form as shown in FIG. 4 (c), deposit and then, in the manufacturing process of the present invention -16- (12) (12) 200303624 :::-organic or inorganic insulating film 67, so that The organic light emitting diode elements are separated from each other, so that a region constituting the organic light emitting element is formed. ik 士 ^, the boundary division of the organic light emitting diode element is irrelevant, and the knife 67 can be removed. However, in consideration of the flatness of the final structure, the port :: 67 will not affect the function of the organic light emitting diode device, so it is not necessary to: remove it. Pole = shows that in the manufacturing process of the present invention, an organic light-emitting diode ':' is pre-processed in a self-consistent manner. As shown in FIG. 5, during the pretreatment process of the present invention, a polymer polymer (such as a photoresist) is formed, and then the protruding structure 69 is patterned at a position adjacent to the region where the organic light emitting diodes are formed. In the present invention, it is desirable that the protruding structure 69 formed has overhangs as shown in FIG. 5. but,. = Effective to obtain the organic light emitting diode element of the present invention, the protruding structure: 9 J, any shape. In addition, in the present invention, the protruding structure 69 shown in FIG. 5 is used to form a shadow mask together in the following procedure to form each layer in a self-consistent manner (such as the light emission of a light emitting diode device). The part and the electron transmission part are magical to the right (^ to the right. In addition, the '69 in this fortune 'protruding structure 69 prevents the evaporation process of the organic light-emitting diode element during the deposition process) at high temperatures, so that the cover can be improved. The reusability of the hood. Secondly, in a specific embodiment of the manufacturing method of the present invention, as shown in FIG. The organic light-emitting diode element composed of the deposited organic light-emitting diode element 16 includes an m-layer, a light-emitting layer, and an electron-transporting layer on the deposited anode M. In this case, -17- (13) 200303624 may be applied.
編光二極體元件的厚度。例如，在本發明的特 L、體貫施例中，上述有機發光二極體元件的厚度可設定 在100 nm至200 nm的範圍内。 此外’在本發明中’為了提升發光效率，在上述各層中 可添加各種有機或無機摻雜劑。此外，在本發明中，考慮 到裝置的特性，也可使用較高級的有機發光二極體元件 作有機發光二極體元件，其構造使陽極、電洞注入層、發 光層、電子傳輸層、依需形成並具另—功能的另靜 極彼此分離。· 圖崎示的蔽陰遮罩M與突起結構69„起，彳自洽地構 ，少在有機發光二極體元件16三個方向的端部，同時還 ^ ”下邛、纟σ構。在本發明構成彩色顯示器裝置的情形中 而要利用4別與R、（^σΒ三色對應的蔽陰遮罩進行圖案 處理。在此情形中’儘管其構造使得對於每—顏色都要 位像素，但也有助於自洽地形成對應於R、g*b每一顏 的像素。因此，也明顯便於遮罩對齊等操作。The thickness of the photodiode element. For example, in the specific embodiment of the present invention, the thickness of the organic light emitting diode element may be set within a range of 100 nm to 200 nm. In addition, "in the present invention", in order to improve the luminous efficiency, various organic or inorganic dopants may be added to the above-mentioned layers. In addition, in the present invention, in consideration of the characteristics of the device, a higher-level organic light emitting diode element may also be used as the organic light emitting diode element, and its structure is such that the anode, hole injection layer, light emitting layer, electron transport layer, The other static poles formed on demand and having another function are separated from each other. · The shadow mask M shown in Fig. Qi and the protruding structure 69 are constructed in a self-consistent manner, less at the ends of the three directions of the organic light-emitting diode element 16, and at the same time, the lower and the upper structures are also ^ σ. In the case where the present invention constitutes a color display device, pattern processing is performed using 4 shade masks corresponding to the three colors of R, (^ σB. In this case, 'although its structure makes it necessary to set pixels for each color' However, it also helps to form pixels corresponding to each color of R, g * b. Therefore, it is obviously easier to perform operations such as mask alignment.
其後，在本發明的製程中，如圖7所示，依序由功函數值 小的材料（如MgAg、A1Li)圖案化陰極，以塗佈有機發光 二極體元件及圖6中形成的其它結構。如上所述，形成的陰 極係為很薄的薄膜，以賦予其透明度。因&，就會擔心陰 極中斷且不穩定。0而，需要在陰極上粘附一透明的導電 膜（如™)’以增加陰極的導電性，並保護功函數值小的該 ,疋材料卩过後，進一步沉積SiNx等材料構成的鈍化膜 78，以保護各結構，如此即形成依據本發明的有機發光二 -18- (14) (14)200303624Thereafter, in the manufacturing process of the present invention, as shown in FIG. 7, the cathode is sequentially patterned with a material having a small work function value (such as MgAg, A1Li) to coat the organic light emitting diode element and the one formed in FIG. 6. Other structures. As described above, the formed cathode is a thin film to impart transparency. With & you worry about the cathodic interruption and instability. However, a transparent conductive film (such as ™) 'needs to be adhered to the cathode to increase the conductivity of the cathode and protect the work function value. After the material has been passed, a passivation film composed of SiNx and other materials is further deposited. 78 to protect the structures, thus forming organic light-emitting diodes according to the present invention-18- (14) (14) 200303624
極體裝置10。 在本發明中，形成的上述突起結構69環繞有機發光二極 體元件。因此，形成有機發光二極體元件後，利用突起結 構69，就可在有機發光二極體元件上自洽地形成該類元件 ，如陰極76及ITO膜。此外，由於形成的突起結構的還包括 懸突，目而同時可確保鄰近的像素彼此隔離。因此，沉積 陰極76時，就不必利用蔽蔭遮罩形成圖案，因而可以明顯 提升製程效率。其後，沉積純化膜。 圖8係依據本發明製造TFT基板8〇的平面圖。在圖8所示 的TFT基板中，形成複數個像素81使其彼此相鄰。在突起結 構69環繞的一區域中形成一個像素。可看出在突起結構 圍繞的區域内部，形成圖2所示的有機發光二極體元件16 及接觸孔38，其中依據本發明形成的孔料係以連接元件68 塗佈。此外，在突起結構69内部的區域令，利用突起結構 的，自洽地形成陰極及鈍化膜，其係在有機發光二極體元 件16的上部形成。 如圖6所示，成形的突起結構69包含懸突，其中形成的沉 積過程中之上游側較寬，而形成的下游側則較窄。因此: 在鄰近突起結構69的-側上’可自洽地形成有機發光二極 體元件的端部。此外，由於上部結構也可由突起結構69自 洽形成，不需要其製造過程及必須的構件，因而可降低製 造成本。 此外，儘管在圖7說明的製程之後，最好移除上述突起結 構69,但是只要不阻礙製程及裝置特徵，在本發明中也^ -19- (15) 200303624极 体 装置 10。 Polar body device 10. In the present invention, the above-mentioned protruding structure 69 is formed to surround the organic light emitting diode element. Therefore, after the organic light emitting diode element is formed, the protruding structure 69 can be used to form such elements on the organic light emitting diode element, such as the cathode 76 and the ITO film. In addition, since the protruding structure formed also includes overhangs, it can simultaneously ensure that adjacent pixels are isolated from each other. Therefore, when the cathode 76 is deposited, it is not necessary to use a shadow mask to form a pattern, so that the process efficiency can be significantly improved. Thereafter, a purified film was deposited. FIG. 8 is a plan view of a TFT substrate 80 manufactured according to the present invention. In the TFT substrate shown in FIG. 8, a plurality of pixels 81 are formed so as to be adjacent to each other. A pixel is formed in an area surrounded by the protruding structure 69. It can be seen that the organic light emitting diode element 16 and the contact hole 38 shown in FIG. 2 are formed inside the area surrounded by the protruding structure. The hole material formed according to the present invention is coated with the connecting element 68. In addition, in the region inside the protruding structure 69, a cathode and a passivation film are formed in a self-consistent manner using the protruding structure, which is formed on the upper portion of the organic light emitting diode element 16. As shown in Fig. 6, the formed protrusion structure 69 includes overhangs, in which the upstream side in the formation of the deposition process is wider and the downstream side formed is narrower. Therefore: on the -side adjacent to the protruding structure 69 ', the end portion of the organic light emitting diode element can be formed in a self-consistent manner. In addition, since the superstructure can also be formed by the protruding structure 69 in a self-consistent manner, its manufacturing process and necessary components are not required, and the manufacturing cost can be reduced. In addition, although it is preferable to remove the protruding structure 69 after the process illustrated in FIG. 7, as long as the process and device characteristics are not hindered, the present invention is also ^ -19- (15) 200303624
鈍化膜可在移除突起結構69之後 保留突起結構69。此外， 形成。 二圖=具體實施例為基礎，已對本發明進行了 關有… 明並不限於圖式中的具體實施例。有 序等的任何選握，” /冓 構 製程順 倉 、擇’/、要可獲得類似結構均適用。 儘管已詳細說明了本發明較佳具體實施 ΠΙΙ：：!^ 、 乾圍所定義的本發明之精神及範疇。 圖式簡單說明 2附圖參考上述詳細說明，即可更全面地瞭解本發明 及其優點。 圖 圖1係本發明之有機發光 一極體裝置的驅動器電路構造 圖2係構成本發明之驅動器電路的半導體結構斷面圖。 圖3顯示本發明之有機發光二極體裝置的製程。 圖4顯示本發明之有機發光二極體裝置的製程。 圖5顯示本發明之有機發光二極體裝置的製程。 圖6顯示本發明之有機發光二極體裝置的製程。 圖7顯示本發明之有機發光二極體裝置的製程。 斷 圖8係依據本發明製造有機發光二極體裝置的平面圖。 圖9係傳統的頂部發光結構之有機發光二極體裝置的 圖 1〇係陰極共用結構的傳統有機發光二極體裝置的驅動 -20- (16) (16)200303624 器電路圖。 圖11係半導體結構的斷面圖，其構成傳統的有機發光二 :體裝置的驅動器電路’該裝置具有利用n_型摻雜ΤΗ的陽 極共用結構。 圖式代表符號說明 10 有機發光二極體裝置 12 n-型驅動器tft I2d 汲極電極 l2g 閘極 12S 源極電極 14 η-型開關tft !4d 沒極電極 l4g 閘極 14s 源極電極 16 有機發光二極體元件 18 電容器 2〇 共用電極 22 資料線 24 選擇線 26 基板 28 線 3〇 線 32 絕緣膜 34 陽極 -21- 200303624 (17) 36 38 42 44 48 50 52 54 56 58 60 61 62 64 66 67 67 68 69 76 78 80 81 82 陰極 接觸孔洞 絕緣基板 閘極 閘極絕緣膜 活動層 通道保護層 源極電極 没極電極 絕緣膜 接觸孔洞 連接元件 聚合物絕緣膜 孔 陽極 有機或無機絕緣膜 部分 連接元件 突起結構 陰極 純化膜 TFT基板 像素 薄膜電晶體（TFT)結構The passivation film may retain the protruding structure 69 after removing the protruding structure 69. Also, formed. Two figures = based on specific embodiments, the present invention has been related ... The description is not limited to the specific embodiments in the drawings. Any selection orderly, etc., "/ 冓 structuring process to go forward, choose '/, to obtain a similar structure are applicable. Although the preferred embodiment of the present invention has been described in detail ΠΙΙ:! ^, As defined by Qianwei The spirit and scope of the present invention. Brief description of the drawings 2 The drawings can refer to the above detailed description to understand the present invention and its advantages more fully. FIG. 1 is a driver circuit structure of the organic light emitting diode device of the present invention FIG. 2 It is a cross-sectional view of a semiconductor structure constituting a driver circuit of the present invention. Fig. 3 shows the manufacturing process of the organic light emitting diode device of the present invention. Fig. 4 shows the manufacturing process of the organic light emitting diode device of the present invention. Manufacturing process of organic light emitting diode device. Fig. 6 shows the manufacturing process of organic light emitting diode device of the present invention. Figure 7 shows the manufacturing process of organic light emitting diode device of the present invention. Fig. 8 shows the production of organic light emitting diode according to the present invention. A plan view of a polar device. Fig. 9 shows a conventional organic light-emitting diode device with a top-emission structure, and Fig. 10 shows a conventional organic light-emitting diode device with a cathode-shared structure. -20- (16) (16) 200303624 device circuit diagram. Figure 11 is a cross-sectional view of a semiconductor structure, which constitutes a traditional organic light-emitting device driver circuit. This device has an anode shared by n-type doped TiO. Structure. Symbol description of the diagram 10 Organic light emitting diode device 12 n-type driver tft I2d drain electrode 12g gate 12S source electrode 14 η-type switch tft! 4d non-polar electrode l4g gate 14s source electrode 16 Organic light-emitting diode element 18 Capacitor 20 Common electrode 22 Data line 24 Selection line 26 Substrate 28 Line 30 Line 32 Insulation film 34 Anode-21- 200303624 (17) 36 38 42 44 48 50 52 54 56 58 60 61 62 64 66 67 67 68 69 76 78 80 81 82 Cathode contact hole insulation substrate gate gate insulation film active layer channel protection layer source electrode non-electrode electrode insulation film contact hole connection element polymer insulation film hole anode organic or inorganic insulation film Partially connected element protrusion structure cathode purification film TFT substrate pixel thin film transistor (TFT) structure
-22- 200303624 (18) 84 絕緣膜 86 反射式陽極 88 電洞注入層 90 電洞傳輸層 92 電子傳輸層 94 陰極 96 緩衝層 98 玻璃保護層 100 驅動器電路 102 p-型驅動器TFT 102d >及極電極 l〇2g 閘極 102s 源極電極 104 有機發光二極體元件 106 陰極 108 開關TFT 110 陽極 M 蔽陰遮罩-22- 200303624 (18) 84 insulating film 86 reflective anode 88 hole injection layer 90 hole transmission layer 92 electron transmission layer 94 cathode 96 buffer layer 98 glass protective layer 100 driver circuit 102 p-type driver TFT 102d > and Electrode electrode 102g Gate electrode 102s Source electrode 104 Organic light emitting diode element 106 Cathode 108 Switching TFT 110 Anode M Shield
-23--twenty three-
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| JP2002019887 | 2002-01-29 | ||
| JP2002150386A JP4095830B2 (en) | 2002-01-29 | 2002-05-24 | Organic LED device and manufacturing method thereof |
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| JP (1) | JP4095830B2 (en) |
| KR (2) | KR100607975B1 (en) |
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| TWI562352B (en) * | 2012-05-30 | 2016-12-11 | Samsung Display Co Ltd | Organic light emitting display device and method of manufacturing the same |
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| TWI562352B (en) * | 2012-05-30 | 2016-12-11 | Samsung Display Co Ltd | Organic light emitting display device and method of manufacturing the same |
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| KR20060079778A (en) | 2006-07-06 |
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