TW200302960A - System including power conditioning modules - Google Patents
System including power conditioning modules Download PDFInfo
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- TW200302960A TW200302960A TW092102596A TW92102596A TW200302960A TW 200302960 A TW200302960 A TW 200302960A TW 092102596 A TW092102596 A TW 092102596A TW 92102596 A TW92102596 A TW 92102596A TW 200302960 A TW200302960 A TW 200302960A
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Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
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- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
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- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Combinations Of Printed Boards (AREA)
- Power Sources (AREA)
Abstract
Description
200302960200302960
五、發明說明(1) 〔發明領域〕 本發明係有關於一種電功率 統的方法及裝置,特別是,本於:二…、捕捉、拒絕管理系 電功率調整技術及熱捕捉、移^个一個特徵係有關於整合 矽、鍺、砷化鎵)的内部或上方。付於共用基底(諸如: 〔習知技藝 隨著半 的急速增加 加。另外, 對於功率調 隨著微處理 消耗增加) 能的整合到 點處理器及 必須能夠及 間位準。再 及愈來愈多 生熱能的捕 功率供 應器與這個 個裝置間的 這個消耗裝 前所述,功 導體裝 ,電子 由於這 整及熱 器速度 調整的 微處理 視訊或 地滿 者,隨 功能的 捉及移 應器乃 消耗裝 有限線 置的需 率消耗 置(舉例 及電力裝 個持續增 拒絕能力 及電晶體 需求係持 器中(舉 圖像處理 足或因應 者微處理 整合到這 除亦已然 是用來滿 置卻常常 長會具有 求變動而 (舉例來 來說:微 置對於額 加的需求 的需求亦 數目的增 績增加。 例來說: 器完成) 急速變動 器速度及 個微處理 成為另一 足功率需 相隔一定 電容器及 導致功率 教:撒處 處理器) 外功率的 ’支援這 持續增加 加,電功 另外,隨 這些功能 ’這個功 的功率消 電晶體數 器中,這 個急速增 求,然而 距離。這 電感器, 傳輸的時 理器中) 上電晶 需求亦 類裝置 。舉例 率(平 著愈來 通常是 率調整 耗的時 目的增 類微處 加的需 ,這個 個供應 其可能 間延遲 的時態 體數目 持續增 的系統 來說, 均功率 愈多功 利用浮 系統亦 態及空 力口、以 理器所 求。 功率供 器及這 會因為 。如先 變動會V. Description of the Invention (1) [Field of the Invention] The present invention relates to a method and device for electric power systems. In particular, the present invention is based on the following two features: electric power adjustment technology for capture and rejection management systems, and thermal capture and shift. Related to the inside or above of integrated silicon, germanium, gallium arsenide). It can be integrated into the point processor and must be able to be integrated into the point processor (such as: [the know-how is increased with the rapid increase of half. In addition, the power adjustment is increased with the increase in microprocessing consumption.) Furthermore, the consumption between the more and more heat-generating power-supplying power supply and this device is described earlier. The work conductor is installed, and the electronic is processed by the micro-processing video or the ground due to the adjustment of the heater speed. The capture and transfer device is a demand rate device that uses a limited line device (for example, and a power supply device that continuously increases the rejection capacity and the transistor demand holder) (such as image processing or micro processing integrated by the responder) It is already used for full installation, but often has a long-term change (for example: the demand of the micro-set for the increase of the amount of demand also increases. For example: the completion of the device) rapid change of the speed of the device and a micro Processing to become another foot power requires a certain capacitor and lead to power teaching: the processor.) The external power's support for this continues to increase, electrical work. In addition, with these functions, the power of the power dissipation transistor is this rapid. Increasing demand, however, the distance. This inductor, the transmission time in the processor) power-on crystal demand is also a similar device. For example, the rate (usually more and more often the rate adjustment consumes time and purpose to increase the demand for more and more. For a system that provides a continuous increase in the number of time bodies that may be delayed, the more average power is used to use the floating system The state and the air force port, the logic device requires. Power supply and this will because. If the first change will
200302960 五、發明說明(2) 隨著處理器速度的增加、以及隨著愈來愈多〜 個處理器中而增加。有鑑於此,功率調整電力^的整合到這 設置便會愈來愈靠近這個消耗裝置。將這些:電子系統的 (諸如:電壓調整器、電容器、直流直流W ^周整元件 )放置在這個消耗裝置旁邊,這些功率調整兩:DC )轉換器 以滿足。 而求的考量便可 第1圖係表示這個功率調整系統的— 系統通常會包括分離的電容器、電壓調整哭、、4 構。這個 (AC-DC)或直流直流(DC—Dc)轉換;::交流直流 的電容器通常會設置在這個積體電路裝 二=地說,分離 電路裝置電性連接。如此,這個裝置以作並且與這 毛品求便可以經由這個電容器的儲存呆=期間的突 供應器滿足這個增加需求的必要肉二 藉以在這個 入電壓。這類電容器通常會稱為,/先 、相對常數的輸 並且是類比電路設計、數位電路… yfaSS )電容器Π, 常見元件。 5又计、功率裝置電路設計的200302960 V. Description of the invention (2) It increases with the increase of processor speed and with more and more processors. In view of this, the integration of the power adjustment power ^ into this setting will get closer and closer to the consumer device. Place these: electronic systems (such as: voltage regulators, capacitors, DC / DC converters) next to this consumer device, these power adjustment two: DC) converter to meet. The first consideration is shown in Figure 1. The system usually includes a separate capacitor, a voltage regulator, and a voltage regulator. This (AC-DC) or direct-current direct-current (DC-Dc) conversion; :: AC and DC capacitors are usually placed in this integrated circuit device. Two = to say, the discrete circuit device is electrically connected. In this way, the device can work with the wool product and can pass the storage of the capacitor to the sudden supply to meet the necessary demand to increase the voltage at this time. This kind of capacitor is usually called, / first, relatively constant output and is analog circuit design, digital circuit ... yfaSS) capacitor Π, common components. 5 Designed and designed for power device circuits
電壓(舉例來 電壓(舉例來 的這個低電壓 置的電流變動 。調整器通常 ,並且更加可 附近。 直流(DC -DC ,,7V )的輸 說:1至5V ) ’其對於這個 ’通常會具有 會用在類比及 能會放置在具 電壓調整器乃是用來接收高 入功率、並且輸出相對穩定的低 輸出功率。電壓調整器傾向提供 高電壓位準的變動或這個消耗裝 大幅增加的抗擾性(immuni ty ) 數位電子功率調整系統的設計中 有快速時間變動功率需求的裝置 父流直流(A C — D C )及直流 )轉換器乃是Voltage (for example, voltage (for example, the current variation of this low voltage set. The regulator is usually, and more accessible, the output of direct current (DC-DC, 7V): 1 to 5V) 'It is usually for this' It can be used in analogy and can be placed in a voltage regulator to receive high input power and output relatively stable low output power. Voltage regulators tend to provide high voltage level changes or this consumption device increases significantly Immunity (immuni ty) The design of the digital electronic power adjustment system has fast time-varying power requirements. The device is a direct current (AC-DC) and direct-current (DC) converter.
200302960 五、發明說明(3) 用來將某便利來源的特定供應 供,舉例來說,這個積體電路裝“耗至二當型態,藉以提 統功率電路會提供單個相 ’ f终多例子中,系 110V K),藉此’這個積體带例來說:48V DC或 的供應電壓(舉例來說··丨至^ ^彳更可以要求非常不同 器便可以轉換這個功率、並下,轉換 在部分系統中,轉換哭1 θ 個衣置需要的輸入電壓。 邊,莽以為.古彳 、°°疋m可此设置於這個消耗裝置旁 壓。:於二’:置所生的功率消耗變動期間提供穩定的電 Meiqiol/ 、?、,牛例來說,美國專利號碼1^59 0 1 040 ; US6191945 AUS6285550 〇 ) :功率管理考量外,這些裝置的功率消耗增加亦會對 二個‘、、、能管㈣統(亦即:捕捉及/或拒絕熱能的系統) ^頜外負擔。有鏗於此,熱能管理系統便會利用諸如散熱 衣置(heat sink )、鼓風機(fail )、利用冷卻水的冷卻板 j⑶Id Plates )系統、及/或上述組合組合的習知技藝, 藉以完成來自,舉例來說,積體電路裝置的熱捕捉、移除、 及拒絕。這類習知的熱能管理設計乃是將這些熱捕捉及拒絕 70件設置於這個積體電路裝置包裝的上方或附近。(請參 照’舉例來說,美國專利號碼US6191945及US62855 5 0。) 舉例來說,請參考第1圖,散熱裝置通常會包括具有直 尾翅的金屬板,藉以利用自然對流將熱能由這個消耗裝置傳 送至周圍氣體。散熱裝置通常會直接設置或放置在這個積體 電路裝置包裝的上方。散熱裝置乃是用來增加這個裝置及周 圍氣體的接觸面積,藉以降低給定功率的溫度上升。200302960 V. Description of the invention (3) It is used to supply a specific supply from a convenient source. For example, this integrated circuit device "consumes up to two types, so that the power circuit will provide a single phase." (Medium, 110V K), to take the example of this integrated belt: 48V DC or the supply voltage (for example, ·· 丨 to ^ ^ 彳 can also require a very different device to convert this power, and down, Conversion In some systems, the input voltage required to convert 1 θ clothes is converted. Side, I think that. 彳, °° 疋 m can be set next to this consumer device .: Yu 2 ': Set the power generated Provide stable electricity during consumption changes. Meiqiol /,? ,, for example, U.S. Patent No. 1 ^ 59 0 1 040; US6191945 AUS6285550 〇): In addition to power management considerations, the increase in power consumption of these devices will also affect the two ' Energy management systems (ie, systems that capture and / or reject thermal energy) ^ Extramaxillary burdens. For this reason, the thermal energy management system will use, for example, heat sinks, blowers, and Cooling plate j⑶Id of cooling water Plates) systems, and / or the combined techniques of the above-mentioned combinations, to complete the heat capture, removal, and rejection from, for example, integrated circuit devices. This type of conventional thermal energy management design is to integrate these heat Capturing and rejecting 70 pieces placed above or near the package of this integrated circuit device. (Refer to 'for example, US Patent Nos. US6191945 and US62855 50.) For example, please refer to Figure 1. The heat sink usually Includes a metal plate with straight tail fins to use natural convection to transfer thermal energy from the consumer to the surrounding gas. The heat sink is usually placed directly above or above the package of the integrated circuit device. The heat sink is used to increase this The contact area of the device and the surrounding gas, thereby reducing the temperature rise of a given power.
第10頁 200302960 五、發明說明(4) 加強某個散熱裝置及其周圍 乃是共同利用一個鼓風機(典型 馬達驅動)及一個散熱袭置。鼓 裝置内部、利用比自然對流更快 散熱裝置及其周圍氣體間的熱傳 習知系統用來加強這個熱能 乃是降低這個消耗裝置及這個散 術通常會牽涉到這個裝置、這個 間的層積數目及層積厚度縮減。 專利號碼US6 1 9 1 945 及US62855 50Page 10 200302960 V. Description of the invention (4) Strengthening a certain heat sink and its surroundings It is a common use of a blower (typical motor drive) and a heat sink. Inside the drum device, a heat transfer learning system that uses faster heat dissipation than the natural convection and the surrounding gas is used to enhance this thermal energy. This is to reduce the consumption device and the dispersive technique usually involves the number of layers between the device and the space. And the laminated thickness is reduced. Patent numbers US6 1 9 1 945 and US62855 50
總而言之,習知系統乃是同 捉、拒絕元件盡可能地設置於這 滿足功率調整及熱能管理的需求 所示之典型、習知佈局。請參考 一個積體電路巢置。這個熱能管 耗裝置的散熱裝置。在部分實施 (經由泛個散熱裝置)係相對為 再者’這個功率調整電路( 直流(AC -DC )及直流直流(DC 攻個消耗裝置旁邊,藉以降低這 置間的線長。 雖然這類習知功率調整及熱 分現有裝置的功率消耗及熱捕捉 術亦可能無法同時滿足其他現有 氣體間 地,旋 風機可 的速度 輸。 管理系 熱裝置 裝置包 (請參 ° ) 時將這 個積體 。這種 第1圖, 理元件 例中, 1¾。 電容器 -DC ) 個供應 能管理 、拒絕 裝置及 的熱傳輸的_種技術 轉葉片乃是利用電子 以讓氣體在這個散熱 流通,藉以加強某個 統能力的另一種技術 間的熱阻抗。這種技 裝、及這個散熱裝置 照’舉例來說,美國 些功率調整及熱捕 電路裝置附近,藉以 做法會導致如第1圖 1這個消耗裝置乃是 乃是一個接觸這個消 熱捕捉、移除及拒絕 、電壓調整器、交流 轉換為)則是放置於 器及這個積體電路穿 技術確實能夠滿足A 需求’然而,習知 未來裝置的功率s fAll in all, the conventional system is a typical, conventional layout as shown in the figure that the catch and reject components are set as far as possible to meet the needs of power adjustment and thermal energy management. Please refer to a nested circuit. The heat dissipation device of this heat energy consumption device. In some implementations (via a cooling device), the power adjustment circuit (DC (AC-DC) and DC (DC) are next to a consumer device, so as to reduce the line length of this space. It is known that the power consumption and heat capture of existing devices may not be able to meet the speed of other existing gas, and the speed of the cyclone can be lost at the same time. When managing the thermal device package (please see °), integrate this product. In this figure 1, the example of the physical component is 1¾. Capacitor-DC) A technology that can manage and reject the device and the heat transfer. The rotor blades use electrons to allow gas to circulate in this heat, thereby strengthening a certain The thermal impedance between the other technologies of this system. This technology and the heat sink are based on, for example, some power adjustment and thermal capture circuit devices in the United States. By doing so, this will lead to the consumption device as shown in Figure 1 and Figure 1. However, it is a contact with this adiabatic capture, removal and rejection, voltage regulator, AC conversion) is placed in the device and the integrated circuit wear A technique to meet the demand does' However, conventional power means future s f
第11頁 200302960 五、發明說明(5) 及熱捕捉、移除、拒绢的猫# , 的便是提出-種新顧的期:加。因此,本發明的-個目 耗及熱捕捉、移除、'及正技術’藉以同時適應功率消 另外,本發明的!求的預期增加。 及熱能管理技術,藉以同二:乃疋提供一種改良的功率調整 及熱捕捉、移除、拒絕現有及未來裝置的功率消耗 的乃是提供-種改良的:率氕::敎:5 ’本發明的-個目 裝置。就此而言,本發;例來…攜式電腦)中的 熱捕捉、拒絕元件加入到二是將這些功率調整及 滿足功率消耗及熱捕捉、目:體積中、並且同時 另外,本發明的一個π乃=求的預期增加。 及熱捕捉、拒絕技術,藉以將這種改良的功率調整 元件與這個消耗裝置(舉來個^正及熱捕捉、拒絕 入,、佳二牧/ , 兄某個積體電路裝置)整 & 降低由於信號傳遞延遲所生的功率誦敕缺P々、卩备柄 由於物理分隔及額外介面所生、。正、曰 * ^ A個裝置至這個散埶裝置 的熱阻抗。如此,這個系統的功率、1戚…衣直 體效率便可以同時提升。…周整及熱能管理能力的整 芊構:I的明的拓:目t乃是提供功率調整及利用緊密 :構^的熱捕捉、=:,藉以完成一個緊密包裝的裝 遞延遲所生的 、並 且加強14個包裝裝置的熱屬性。 再:’雖然這整技術可能適用於部分應用 袭置,本兔明的一個目的乃疋提供—種功率調整技術,藉以Page 11 200302960 Fifth, the description of the invention (5) and the cat # of heat capture, removal, and rejection of silk are the period for raising a new kind of care: plus. Therefore, the present invention's individual consumption and heat capture, removal, 'and positive technology' can be used to adapt to power consumption at the same time. In addition, the present invention! Expected increase in demand. And thermal management technology, so that the same two: Nai Yi provides an improved power adjustment and thermal capture, removal, rejection of power consumption of existing and future devices is provided-a kind of improved: rate 氕 :: 敎: 5 '本Invented-a personal device. In this regard, the present invention (for example ... portable computer) heat capture, rejection elements are added to the second is to adjust these power and meet power consumption and heat capture, the purpose: the volume, and at the same time, in addition, one of the invention π is the expected increase in demand. And thermal capture, rejection technology, so as to integrate this improved power adjustment element with this consumer device (for example, ^ positive and thermal capture, rejection, Jia Ermu /, a certain integrated circuit device) integration & Reduce the power generated due to signal transmission delays, such as lack of power, and equipment handles due to physical separation and additional interfaces. Positive and negative * ^ A device to the thermal impedance of this scattered device. In this way, the power and efficiency of this system can be improved at the same time. … Surrounding structure and thermal energy management capabilities: I's clear extension: Objective t is to provide power adjustment and utilization of tight: structure ^ 's thermal capture, = :, to complete a tightly packed delivery delay And strengthen the thermal properties of 14 packaging devices. Again: ’Although this entire technology may be suitable for some applications, one of the goals of this rabbit is to provide a power adjustment technology by which
第12頁 200302960 五、發明說明(6) 滿足所有應用 明的一個目的 可實施於空間 一個目的乃是 的預期增加及Page 12 200302960 V. Description of the invention (6) Meeting all applications One purpose of the invention can be implemented in space One purpose is the expected increase of and
= 消耗的預期增加。舉例來說,本發 限制供種改良的功率調整技術,藉以用在 限制應用裝詈中沾壯要. 稽Μ用在 提供改良的功㈣:技桁鑑於此,本發明的 具有嚴厲藉以適應功率消耗 嚴厲空間需求的應用裝置Q 〔發明 因 整模組 個積體 基底, 於第二 孔,用 第一介 面上的 第二介 面上的 另 體基底 概述〕 應本發 ,其固 電路裝 其具有 介面。 以提供 面上的 對應介 面上的 對應介 外,這 内,用 這兩個介面上 及至少一個電 因應本發 亦具有置於第 明的第一個主 定於一個積體 置的功率。這 第一介面及第 另外,這個功 ,性連接於第 第一組焊墊, 面穿孔。另外 第二組烊墊, 面穿孔。 個功率調整模 以調整欲施加 於第一介面上 。另外,這個 容器。 明這個特徵的 二介面上的至 要特徵, 電路裝置 個功率調 二介面, 率調整模 本發明乃 ’用以調整欲施 整模組具 其中,第 組更具有 是一個 有一個 一介面 介面及第二介面 塾分別會 率調整模 墊會分別 且這些焊 ,這個功 且這些焊 複數個 間,以 連接至 組亦具 連接至 功率調 加至這 半導體 係相對 介面穿 及置於 第一介 有置於 第二介 組更具有 至這個積 、置於第 電路更具有至少一 電路,其置於一個半導 體電路裝 一個實施 少一個功 面上 例,這個 率焊墊及 置的功率。這 、或同時置於 個電壓調整器 功率調整模組 置於這個半導= Expected increase in consumption. For example, the present invention restricts the use of improved power adjustment techniques to limit the use of equipment. It is used to provide improved power: technology. In view of this, the present invention has a strict way to adapt to power Application device Q that consumes severe space requirements [Invented because of the integrated substrate of the entire module, in the second hole, the use of a separate substrate on the second interface on the first interface is summarized.] interface. In order to provide the corresponding interface on the corresponding interface on the surface, the two interfaces and at least one of the electrical components should also have the power of the first one that is determined by a product in accordance with the present invention. This first interface and the first, in addition, this function is sexually connected to the first set of pads, and the surface is perforated. In addition, a second group of cymbal pads is perforated. A power adjustment mode to adjust the power to be applied to the first interface. Also, this container. The essential features of the two interfaces that explain this feature, the circuit device has a power-adjusting two interface, and the rate adjustment mold. The present invention is used to adjust the module to be assembled. The second group has one interface with one interface and The second interface 塾 will adjust the die pads separately and these solders. This function and these solders are connected to the group and also connected to the power adjustment. This semiconductor interface is connected to the interface and placed in the first interface. The second dielectric group has at least one product, and the first circuit has at least one circuit, which is placed in a semiconductor circuit, and implements one less work surface, the rate of pads, and power. This or both voltage regulators and power regulator modules are placed in this semiconductor
第13頁 200302960 五、發明說明(7) —______ 體基底中的至少一個功 個功率焊墊,用以 牙礼。這個功率穿孔係電性連接這 器及電容器之至少一去連接於第二介面及這些電壓調整 連接至置於這個半導轉二二另外,這個功率穿孔亦可以電性 墊、穿孔、導^體基底中的一個功率導管。這個功率焊 這歧電壓調整^及ί ί乃是用來提供電性連接於第二介面及 一电& η正為及電容器之至少一者間。 -個例t ’這個功率調整模組亦可以具有至少 ㈡Γ置。這個輸出功率導管可以連接置於第- 個積體電路裝置的一個輸入。 力车乃疋對應於以 因應本發明的這個特徵,這個功率調整模組亦可以且有 —個電流感應器,其置於這個半導體基底中,用以提供表示 這個積體電路裝置及/或這個電路的電流消耗的資訊了 ^, 外,一個控制器,其耦接這個電流感應器’亦可以接收這個 資訊,並藉以調整這個積體電路裝置及/或這個功整賴 組的冷卻。 另外,這個功率調整模組亦:以具有—個溫度感應器,Page 13 200302960 V. Description of the invention (7) —______ At least one power pad in the body substrate is used for dental salvation. This power hole is electrically connected to at least one of the device and the capacitor to the second interface and these voltage adjustments are connected to the semi-conductor. In addition, this power hole can also be electrically mated, perforated, and conductive. A power duct in the base. This power welding voltage and voltage adjustment ^ and ί are used to provide electrical connection between at least one of the second interface and an electrical & capacitor. -Case t 'The power adjustment module may also have at least ㈡Γ. This output power conduit can be connected to an input placed on the first integrated circuit device. Liche is corresponding to this feature of the present invention. This power adjustment module may also have a current sensor, which is placed in the semiconductor substrate to provide the integrated circuit device and / or this. Information about the current consumption of the circuit ^ In addition, a controller, which is coupled to the current sensor, can also receive this information, and thereby adjust the cooling of the integrated circuit device and / or this function. In addition, this power adjustment module also has: a temperature sensor,
這個半導體基底中々;用以ί供表示這個溫度感應器1 近區域的溫度的資訊。另外,一個控制器,其 感應器,亦可以接收這個資訊,並藉以調整 孤J 置及/或這個功率調整模組的冷卻。 k個積體電路! 因應本發明的第二個主要特徵,本發明乃H 一 ^ 整及熱能管理模組,用以耦接一個積體電路梦=固功率彰 岭展置。這個功今The semiconductor substrate is used to indicate the temperature of the near area of the temperature sensor 1. In addition, a controller, its sensor, can also receive this information and use it to adjust the solitary position and / or the cooling of the power adjustment module. k integrated circuits! In response to the second main feature of the present invention, the present invention is a H _ ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ / ^ / I this invention is a H-integration and thermal energy management module to respond to a second major feature of our invention, which is used to couple an integrated circuit dream = solid power Zhangling exhibition. This achievement
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五、發明說明(8) 調整及熱能管理模組具有一個 面及第二介面,其中,第一介 這個功率調整元件亦具有一個 孔’其置於這個半導體基底中 至這個積體電路裝置的功率。 整裔及至少一個電容器。另外 率調整元件的第一介面上、第 介面上。 功率調整元件,其具有第一介 面係相對於弟二介面。另外, 半導體基底,複數個介面穿 ’以及電路,用以調整欲施加 這個電路具有至少一個電壓調 ’這個電路亦可以置於這個功 二介面上、或同時置於這兩個 因應本發 更可以具有一 面,其中,第 件,在操作期 另外,這個熱 係具有置於其 流體經過。 明的這個特徵,這個功率調整及熱能管理模組 個熱能管理元件,其具有第一介面及第二介 一介面係相對於第二介面。這個熱能管理元 間丄乃是利用一個具有液相的流體捕捉熱能。 能官理元件亦具有一個基底,其中,這個基底 中的一個微通道的至少一部分、並架構以允許 用以ί ί Φ這個熱能管理模組亦可以具有複數個介面穿孔 生ΐ接於這個熱能管理元件的第-介面及匕 連接至這個* Ϊ個熱能官理70件的複數個介面穿孔可以分 接於這個整元”對應介面穿孔,用以提供電性 二介面門。1^正兀件的第一介面及這個熱能管理元件的 曲間。就此而言,这姻埶沾其田-理連結至f ^ …月匕吕理兀件的弟一介面可以 另外,ΐ 個率調整元件的第二介面。 微通道::功ί:5及熱能管理模組亦可以具有電路及-、、、、。構。迫個電路乃是置於這個半導體基底中,用以V. Description of the invention (8) The adjustment and thermal energy management module has a surface and a second interface, wherein the power adjustment element of the first interface also has a hole, which is placed in the semiconductor substrate to the power of the integrated circuit device . Whole family and at least one capacitor. In addition, the first interface and the second interface of the rate adjusting element. The power adjusting element has a first interface relative to the second interface. In addition, the semiconductor substrate, a plurality of interface interfaces, and a circuit are used to adjust the circuit to be applied with at least one voltage adjustment. The circuit can also be placed on the work interface, or both. Has one side, where, the first piece, in addition to the operating period, this thermal system has to place its fluid through. This feature of the invention, the power adjustment and thermal energy management module is a thermal energy management element, which has a first interface and a second interface, which are opposite to the second interface. This thermal energy management element uses a fluid with a liquid phase to capture thermal energy. The energy management element also has a base, wherein at least a part of a microchannel in the base is structured to allow the thermal energy management module to have a plurality of interface perforations to connect to the thermal energy management. The first interface of the component and the dagger are connected to this * A plurality of interface perforations of 70 pieces of thermal energy management can be tapped into this integer unit "corresponding interface perforations to provide electrical two interface doors. The first interface and the song between this thermal energy management element. In this regard, this marriage partner is connected to f ^… the first interface of the moon and the moon can be added to the second interface of the rate adjustment element . Micro-channel :: Function: 5 and thermal energy management module can also have circuits and-,,,, ... structure. A circuit is placed in this semiconductor substrate to
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整欲施加至這個積體電路裝置的功率。這個電路可以置於第 一介面上、置於第二介面上、或同時置於這兩個介面上。'另 外,這個電路具有至少一個電壓調整器及至少一個電容器。 這個微通道結構具有至少一個微通道,其置於這個半導^其 底中,用以捕捉熱能。 & 因應本發明的這個特徵, 亦可以具有一個電流感應器、 器。這些電流感應器、溫度感 個功率調整及熱能管理模組中 流感應器及/或溫度感應器, 訊,並藉以利用這個微通道結 吕’這個控制器可以調整這個 個唧筒輸出的流體流率。 XI個功率調整及熱能管理模組 一個溫度感應器、及一個控帝 應器及/或控制器可以置於這 。這個控制器可以耦接這些電 用以接收電流或溫度指示資 構调整熱能捕捉速率。就此而 微通道中的流體流動及/或這 =本發明這個特徵的一個實施例,這個 二m會具有置於第二介面上的至少一個功率=至’ i ,用t ί牙孔。這個功率焊墊係電性連接至這個功率穿 二提=性連接於第二介面及這些電 G 。這個功率穿孔係可以電性連接至-個: 連接於這個功率焊^ 二。這個功率導管係提供電伯 間。 墊及化些電壓調整器及電容器之至少一省 在另一個實施例中, 有至少一個輸出功率導管 整功率至這個積體電路裝 這個功率調整及熱能管理模組會具 ,其耦接至這個電路,用以提供調 置。這個輸出功率導管可以連接至Adjust the power to be applied to this integrated circuit device. This circuit can be placed on the first interface, on the second interface, or on both interfaces. 'In addition, this circuit has at least one voltage regulator and at least one capacitor. The microchannel structure has at least one microchannel, which is placed in the bottom of the semiconductor to capture thermal energy. & In accordance with this feature of the present invention, it may also have a current sensor. These current sensors, temperature sensors, power adjustment and thermal management modules are used in the current sensor and / or temperature sensor, and the microchannel junction is used to control the fluid flow rate output by the controller. XI power adjustment and thermal management modules, a temperature sensor, and a controller and / or controller can be placed here. This controller can be coupled to these electric currents to receive current or temperature indications to adjust the thermal energy capture rate. In this regard, the fluid flow in the microchannel and / or this = an embodiment of this feature of the present invention, these two m will have at least one power placed on the second interface = to 'i, using t ί. The power pad is electrically connected to the power connector and is electrically connected to the second interface and the electrical G. This power piercing system can be electrically connected to one: connected to this power welding ^ 2. This power conduit system provides electrical connections. Pads and at least one of the voltage regulators and capacitors. In another embodiment, there is at least one output power pipe with the full power to the integrated circuit. The power adjustment and thermal energy management module assembly is coupled to this. Circuitry to provide adjustments. This output power conduit can be connected to
第16頁 200302960 五、發明說明(ίο)Page 16 200302960 V. Description of the Invention (ίο)
一個輸入功2焊墊,其置於這個功率調整元件的第一介 上^ = "個輸入功率焊墊可以對應於這個積體電路11 的功率輸出。 &衣置 〔較佳實 本發 積體電路 術及系統 上方或下 行最佳化 應用裝置 要提供這 這些實施 效益的功 另外 率,以及 電路的技 應用裝置 需求,對 而言,在 用於空間 除及拒絕 或整合功 類似足跡 施例的詳細說明 明乃是有關於 裝置)欲施加 乃疋猎著堆疊 方,藉以對這 或加強。本發 中’堵如:可 個消耗裝置一 例便可以提供 率調整系統。 ,本發明亦是 管理消耗裝置 術及系統。本 的環境限制( 功率調整及熱 幾個實施例中 限制的應用裝 能力。另外, 率調整電路及(footprint ) 一種調整消耗裝置(舉例來說,一個 功率的技術及系統。本發明的這種技 這個功率調整電路於這個消耗電路的 個消耗裝置的輸入功率的功率調整進 明的幾個實施例係適用於空間限制的 攜式或手持式應用裝置,其可能會需 個良善調整的輸入功率供應。藉此, 一個有效、緊密(縮減體積)、成本 有關於一種 熱捕捉、移 發明的這種 舉例來說) 能管理能力 ,本發明的 置,其亦可 這些實施例 熱能管理元 的基底中, 調整消耗裝置欲施加功 除及/或拒絕及功率調整 技術及系統乃是因應這個 及這個消耗裝置及系統的 進行最佳化或加強。就此 這種技術及系統亦可以適 能會需要南度熱捕捉、移 的技術及系統亦可以組合 件於相同的基底中、具有 •及/或這個消耗裝置的An input work 2 pad is placed on the first interface of the power adjustment element. ^ = &Quot; Input power pads can correspond to the power output of the integrated circuit 11. & Clothing [It is better to implement the integrated circuit technology and system optimization application device above or below to provide these additional benefits of implementation benefits, as well as the demand for circuit technology application devices. The detailed description of the space removal and rejection or integration similar to the footprint example is clearly related to the device. In the present example, a plug-in device can provide a rate adjustment system as an example. The present invention is also a technology and system for managing consumption devices. The present environmental limitation (power adjustment and thermal limit the application capacity in several embodiments. In addition, the rate adjustment circuit and a footprint) adjust the consumption device (for example, a power technology and system. This kind of the invention Several embodiments of the power adjustment circuit that use the power adjustment circuit to input power of the consuming device of the consumption circuit are suitable for space-constrained portable or handheld applications, which may require a well-adjusted input Power supply. In this way, an effective, compact (reduced volume), cost related to a heat capture, transfer invention, for example, can manage the ability, the device of the present invention, which can also be the heat management element of these embodiments. In the base, the adjustment and consumption devices are intended to apply power division and / or rejection, and the power adjustment technology and system are optimized or strengthened in response to this and this consumption device and system. In this regard, such technologies and systems may also be suitable as needed. Nandu heat capture and transfer technologies and systems can also be combined in the same substrate, with • and / or this Consumption means
200302960 外,本發 置及/或 。這個控 或功率調 熱捕捉、 工作流體 唧筒的的 以滿足這 變動所生 進一步降 些熱能管 或結構。 結構以捕 熱能。 外,本發 或排列以 整能力加 明亦可 這個功 制器可 整電路 移除及 以捕捉 流體流 個消耗 的預期 低這個 理元件 就此而 捉及移 五、發明說明(11) 基底中。藉此, 以提供有效、緊 本發明亦具 一個控制器以接 動)的回授信號 一個熱捕捉、移 動。 另 消耗裝 控制器 置及/ 元件的 筒提供 整這個 動,藉 率消耗 為 跡,這 用基底 微通道 電路的 另 夠設置 功率調 這些實施例的功率 密、成本效益的功 有利用一個熱能管 收參數感應器(舉 ,並據以調整一個 除及/或拒絕元件 以利用一個 率調整電路 以,因應這 的熱產生變 /或拒絕能 及移除熱能 動、或調整 裝置及/或 熱能管理。 功率調整及 可以與這個 吕,這些熱 除這個消耗 明乃是提供一牙重& 依據這個系統的需 強或最佳化。另夕卜 調整及熱能管理系統便可 率調整及熱能管理技術。 理元件的實施例,其具有 例來說,溫度、壓力或流 即陶的流體流動、或調整 的微通道結構中的流體流 電流感應提供表示這個 的電流消耗的資訊至一個 個資訊,預期這個消耗裝 動、並調整這些熱能管理 力。舉例來說,當利用唧 時’這個控制器便可以調 這些微通道中的流體流 這個功率調整元件因應功 熱能管理系統呈現的足 功率調整模組整合至_共 ,官理元件可以利用一個 t置及/或這個功率調整 率及熱能管理模組,其能 要或需求’有效地將這個 本發明這個功率及熱能200302960, this device and / or. This control or power adjustment of the heat capture, working fluid cartridge is to meet this change and further reduce some thermal energy pipes or structures. Structure to capture heat. In addition, the present invention can also be used to improve the capability of the whole circuit. This controller can be used to remove the circuit and capture the fluid flow. The expected low consumption of this physical element is captured and moved. V. Description of the invention (11). In this way, in order to provide effective and compact, the present invention also has a controller to respond to the feedback signal, a thermal capture, movement. In addition, the tube containing the controller and / or components is provided for this operation, and the rate of consumption is used as a trace. This is based on the additional power of the base microchannel circuit to adjust the power density and cost-effectiveness of these embodiments. A thermal energy tube is used. Receive parameter sensors (for example, and adjust a division and / or rejection element accordingly to use a rate adjustment circuit to respond to the heat generation and / or reject energy and remove thermal energy, or adjust the device and / or thermal energy management The power adjustment can be related to this Lu, these heat removal in addition to the consumption is clearly to provide a weight and optimization based on the needs of this system. In addition, the adjustment and thermal energy management system can be adjusted and thermal energy management technology The embodiment of the physical element has, for example, temperature, pressure, or flow, ie, the fluid flow of the ceramic, or fluid flow in the adjusted microchannel structure. Current sensing provides information indicating this current consumption to each piece of information. It is expected that This consumption activates and adjusts these thermal management capabilities. For example, when using 唧 'this controller can adjust these micro- The power flow adjustment element of the fluid flow in the channel is integrated with the power adjustment module corresponding to the foot and heat energy management system. The official management element can use a device and / or the power adjustment rate and heat energy management module, which can or Demand 'to effectively convert the power and heat of this invention
200302960 五、發明說明(12) 管理模組的設置或排列可以將這個系統的熱捕捉、移除及/ 或拒絕能力加強或最佳化。就此而言,這些功率調整元件及 熱能管理元件的彼此或與這個消耗裝置的相對設置或位置亦 可以將這個熱能管理元件及功率調整效能加強或最佳化。在 特定情況下,本發明可以實施多於一個的熱能管理元件,藉 以進一步加熱捕捉及拒絕能力,其可以進一步加強這個系統 (舉例來說,這個功率管理模組及這個消耗裝置)的可靠 性。 请參考第2、3及4圖,在一個實施例中,本發明乃是一 個功率調整模組1 〇〇,其可以置於裝置2〇〇 (舉例來說,一個 積體電路裝置,諸如··一個微處理器)及印刷電路板4〇Q (如圖所示)之間、或置於裝置2〇〇及熱能管理模組3〇〇 (如第4圖所示)之間。功率調整模組丨〇〇,相對於消耗裝置 20 0及熱能管理模組3〇〇,的位置可以因應系統1〇〇的功 熱能及空間考量加以選定。 第2圖的功率調整模組丨〇〇係包括一個半導體基底丨〇〇、 介面穿孔104&至1〇411、介面焊墊1063至1〇61)、功率及地點穿 孔108a及108b、功率及地點焊墊11〇&及11〇1)、 底m具有第一介面,用以與褒置二或介 面、及弟一;丨面,用以與基底或電路板400 ( 一 =統印刷電路板,諸如:一個主機或子機板)匹配或介 這個半導體基底102可以利用數種 來說:石夕或鍺。在特定情況中,吾等使用的材抖衣作,舉例 200302960 五、發明說明(13) Ϊ;2:、的基底相同、或能夠具有類似的特性(舉例來★兒, .,、、擴展)。這種架構可以提供加強的操作 :周二模組10°及裝置2°°的類似熱擴展特性可以將功 :。,裝置200間的電性連接缺陷的電位最小化 同的材料亦可以具有相同製= = 卜’利用相 而潛在地降低製造成本。技術及心八備的好處’進 =介面穿孔ma至mh75是用來提供裝置2_ =的電性連接’但是卻不會提供給功率調整 1進行:周整裝置20°的功率調整。就此而言,功率調整模: 乃吹疋用來提供裝置2〇〇利用的其他信號的電性互連,諸 “ :ΐ及Ϊ址信號。舉例來說’當裝置200是-個微處理 。。衣置%,"面穿孔10“至1〇4}1可以,經由功率調整模组 0:,在廷個微處理器及’舉例來說’動態隨機存取記憶體 ⑽AM)或靜態隨機存取記憶體(SRAM)記憶體裝置間提供 :個電路路徑。如&,系、統1()(舉例來說,動態隨機存取記 板體(DRAM)或靜態隨機存取記憶體(SRAM)記憶體裝置) 的其他部分信號便可以利用印刷電路板4〇〇上的信號執跡, 經由功率調整模組100,利用介面穿孔1〇栳至1〇4行進至 至裝置20 0。 廷些介面穿孔1 〇4a至1 〇4h可以利用習知處理技術加以製 作。當裝置20 0上行進或傳遞的信號數目很大時,吾等最好 ,用高非等向性蝕刻在基底1 〇 2中形成窄路徑,並在這些路 從中沈積(舉例來說,利用化學氣相沈積法(VCD )或低壓200302960 V. Description of the Invention (12) The setting or arrangement of the management module can enhance or optimize the heat capture, removal and / or rejection capabilities of this system. In this regard, the relative arrangement or position of these power adjustment elements and thermal energy management elements with respect to each other or with this consuming device can also enhance or optimize this thermal energy management element and power adjustment performance. In certain cases, the present invention can implement more than one thermal energy management element to further heat capture and rejection capabilities, which can further enhance the reliability of the system (for example, the power management module and the consumer). Please refer to Figs. 2, 3, and 4. In one embodiment, the present invention is a power adjustment module 100, which can be placed in the device 200 (for example, an integrated circuit device such as · A microprocessor) and the printed circuit board 400Q (as shown in the figure), or between the device 200 and the thermal management module 300 (as shown in figure 4). The position of the power adjustment module 丨 〇〇, relative to the consumption device 200 and the thermal energy management module 300, can be selected according to the system's power, heat, and space considerations. The power adjustment module in Fig. 2 includes a semiconductor substrate, interface holes 104 & to 10411, interface pads 1063 to 1061), power and location holes 108a and 108b, power and location The pads 11 and 10) and the bottom m have a first interface for the second or interface and the first one; and the surface for the base or the circuit board 400 (one = uniform printed circuit board) , Such as: a host or a daughter board) matching or interposing this semiconductor substrate 102 can use several kinds of words: Shi Xi or germanium. In specific cases, we used the material shaker as an example, 200302960 V. Description of the invention (13) Ϊ; 2: The base of the same, or can have similar characteristics (for example, ★ ,,,,,,,,,,,,,,,,,,,,,,,,,,,,) . This architecture can provide enhanced operation: the similar thermal expansion characteristics of the module 10 ° and the device 2 °° on Tuesday can work: Therefore, the potential of the electrical connection defect between the devices 200 is minimized. The same material can also have the same system. The benefits of technology and ingenuity ‘in = interface perforation ma to mh75 is used to provide the electrical connection of the device 2_ = but it is not provided for power adjustment. In this regard, the power adjustment module: is an electrical interconnection used to provide other signals utilized by the device 2000, such as: and address signals. For example, when the device 200 is a micro-processor. . %%, " face perforation 10 "to 1〇4} 1 can, through the power adjustment module 0 :, in a microprocessor and 'for example' dynamic random access memory (AM) or static random The access memory (SRAM) memory device provides: a circuit path. For example, & system, system 1 () (for example, dynamic random access memory (DRAM) or static random access memory (SRAM) memory device) other parts of the signal can use the printed circuit board 4 The signal trace on the 〇〇, through the power adjustment module 100, travels to the device 200 using the interface perforation 101 to 104. These interface perforations 104a to 104h can be made using conventional processing techniques. When the number of signals that the device 200 travels or transmits is large, it is best for us to use high anisotropic etching to form narrow paths in the substrate 102 and deposit in these paths (for example, using chemistry Vapor Deposition (VCD) or Low Pressure
200302960200302960
化學氣相沈積法(LPCVD)技術)一個高導電性材料(諸 如.金、銅、鋁)或咼摻質複晶矽,藉以製作一高導電性互 接著,請繼續參考第2圖,這個實施例的功率調整模组 100更可以包括介面焊墊10仏至1061),藉以在功率調整模植 100及裝置200或電路板400間促進更大的導電性。就此而 言,這些介面焊墊106a至106P可以在匹配或介面功率調整模 組1〇〇與電路板400及/或裝置200時提供更大的容忍声。迻、 些介面焊墊1063至10613可以利用習知技術,經由高導&電性材 料(諸如:金、銅、鋁)完成製作。在一個較佳實施例中, 穿孔10切至10牝及介面焊塾106&至1〇叶最好能夠利用相 同材料。事實上,焊墊1063至1061)可以利用球格陣列(bga 晶片尺規包裝(CSP)裝置所利用的相同或類似方法及 材料完成製作。這個術語"焊墊”,如文中所 Π,)、晶片尺規包裝(叫、及諸如== 利用的球形(b a 11 )連接技術。 接著,請繼續參考第2圖,功率調整模組丨〇〇亦可以包括功率 及地點穿孔108a及108b,藉以提供一個供應電壓、供應電 流、參考電壓、及/或地點(供應)電壓至電路丨丨2’、。…這些 功率及地點穿孔108a及1 〇8b可以利用與介面穿孔丨 ^二 相同的方法加以設計及製作。 功率及地點穿 條件而增加額外 功率及地點穿孔 應該注意的是’雖然本發明僅介紹兩個 孔’但是熟習此技藝者當能夠視需要及其他 的功率及地點穿孔。另外,應該注意的是,Chemical Vapor Deposition (LPCVD) technology) A highly conductive material (such as gold, copper, aluminum) or erbium-doped polycrystalline silicon to make a highly conductive interconnect. Please continue to refer to Figure 2. This implementation The exemplary power adjustment module 100 may further include interface pads 10 to 1061), so as to promote greater conductivity between the power adjustment mold 100 and the device 200 or the circuit board 400. In this regard, these interface pads 106a to 106P may provide greater tolerance when matching or interface power adjustment module 100 to circuit board 400 and / or device 200. These interfacial pads 1063 to 10613 can be fabricated using conventional techniques using high-conductivity & electrical materials (such as: gold, copper, aluminum). In a preferred embodiment, the perforations 10 to 10 and interface solders 106 & 10 are preferably made of the same material. In fact, pads 1063 to 1061) can be fabricated using the same or similar methods and materials used in a ball grid array (bga wafer rule package (CSP) device. The term " pads ", as described herein,) , Wafer ruler packaging (called, and spherical (ba 11) connection technology such as ==. Then, please continue to refer to Figure 2. The power adjustment module 丨 〇〇 can also include power and location perforations 108a and 108b. Provide a supply voltage, supply current, reference voltage, and / or location (supply) voltage to the circuit 丨 2 ', ... These power and location perforations 108a and 108b can be applied in the same way as interface perforations. Design and production. Additional power and location perforation due to power and location penetration conditions It should be noted that although the present invention only introduces two holes, those skilled in the art should be able to perforate according to needs and other powers and locations. In addition, should pay attention to,
200302960 五、發明說明(15) 108a及108b亦V以提供電路112需要的其他電壓或電流,藉 以報及文中所述的功能或其他想要的功能。 這個功率調整模組1 0 0亦可以具有功率及地點焊墊11 〇 a 及1 0 0 b,藉以加強功率調整模組1 〇 〇及印刷電路板4 〇 〇間的導 電性。這些功率及地點焊墊1 1 〇a及1 lb,與介面焊墊丨06a至 106p相同,乃是在匹配或介面功率調整模組1〇〇及電路板4〇〇 日供更大的谷忍度或不匹配。另外,這些功率及地點焊塾 11〇3及11〇1)亦可以利用與介面焊墊1〇63至1〇613相同的方法加 以設計及製作。 這個功率調整模組1 〇 〇亦可以包括電路11 2。這個電路 Π2乃是用來將調整功率傳送至裝置20〇。特別是,電路^2 了以k供裝置2 0 0所需要的電壓參數(舉例來說,供應電壓 ^地點)及電流參數(舉例來說,供應、峰值及典型操作電 流)的適當調整,藉以使裝置2 0 0可利用的電壓及電流能夠 在,,巧來說,正常操作、啟動及//或關閉期間,落於適當 及可靠操作所需要的範圍及容忍度。這個電路丨丨2亦可以具 有,壓j整器、旁路電容器、直流直流(Dc _ dc )轉換器、 =^交流直流(AC —DC )轉換器,其可以利用習知技術及 舉例來說,習知的互補式金氧半電晶體(CMOS )或雙 =電晶體(BJT)設計及製作技術)力雨列、架構、設 薛I i連。這些元件的簡界概述已在發明背景中介紹,並因 間易考量而不再予以重述。 的=,糟著設置電路112,諸如:裝置2〇〇旁邊的電壓調 方路電容器、亞鐵焊珠、直流直流(Dc — DC )轉換200302960 V. Description of the invention (15) 108a and 108b are also V to provide other voltages or currents required by the circuit 112, so as to provide the functions described in the report and the article or other desired functions. This power adjustment module 100 can also have power and location pads 11 〇 a and 100 b to enhance the electrical conductivity between the power adjustment module 100 and the printed circuit board 400. These power and location pads 1 10a and 1 lb are the same as the interface pads 06a to 106p, but they are used for matching or interface power adjustment module 100 and circuit board 400 days for greater valley tolerance. Degrees or mismatch. In addition, these power and spot welding pads (1033 and 1101) can also be designed and manufactured using the same method as the interface pads 1063 to 10613. The power adjustment module 1 00 may also include a circuit 112. This circuit Π2 is used to transmit the adjustment power to the device 20. In particular, the circuit ^ 2 appropriately adjusts the voltage parameters (for example, supply voltage ^ location) and current parameters (for example, supply, peak value, and typical operating current) required by k to supply device 200. The voltage and current available to the device 200 can, for example, fall into the range and tolerance required for proper and reliable operation during, for example, normal operation, startup and / or shutdown. This circuit 2 can also have a voltage regulator, a bypass capacitor, a DC-DC converter, and an AC-DC converter, which can use conventional techniques and examples. , The conventional complementary metal-oxide-semiconductor (CMOS) or dual-transistor (BJT) design and manufacturing technology) force rain, architecture, and design. A brief overview of these elements has been introduced in the background of the invention and will not be repeated for reasons of time. ==, badly set the circuit 112, such as: voltage regulating capacitors next to the device 200, ferrous bead, DC-DC conversion
第22頁 200302960 器 '及/或交流直流(AC_DC)轉換器,與功率調整的上述 考量便可以滿足。另外,電路丨丨2消耗的水平及垂直間隙, 相較於第1圖及美國專利號碼US628 5550所示的習知技3術及系 統,亦可j相當程度地降低。另外,將功率調整模組/〇〇設、 置在熱能管理模組30 0上方或附近亦可以促進 1()〇中/電路112所生熱能的有效捕捉及拒絕。羊巧正核、、且 圖^所示的電路112乃是置於基底102的第一介面上 方。=個實施例亦可以促進與電力功率及裝置2〇〇的地點輸 ,;丨面:、、:而,應该注意的是,電路1 1 2亦可以置於第4圖 所不=第二介面上方。這種架構可以,舉例來說,加強相對 於功率調整模組100的電路的熱能捕捉及拒絕能力、並且可 以加強裝置2 0 0及印刷電路板4 〇 〇上信號執跡間的信號導電 ^ #另夕,卜第4圖所示的這種架構亦可以適應裝置2 〇 0的包裝 =1诒亚且可以降低功率調整模組1〇〇及消耗裝置200間的熱 二。弟4圖的實施例亦可以適應功調整模組1〇〇的電路 1 1 2的製造限制。 * ,延個電路112亦可以同時置於第-及第二介面上 :门同時置於第-及第二介面上方的-種佈局可 加以=:衣置2〇0的功率調整需求可以考量功率調整模組100 的功::外,Ϊ是ΐ該注意的是,除了功率調整模組100執行 以利ΐ 、: ί供濾波功能的額外分離電力功率調整元件亦可 亚利用類似習知系統的方法加以放置。在這種情況 力率调整模組100並不會執行系統10的全部功率調整功Page 22 200302960 converter and / or AC-DC converter, and the above considerations of power adjustment can be satisfied. In addition, the horizontal and vertical gaps consumed by the circuit 2 can also be considerably reduced compared to the conventional techniques and systems shown in Figure 1 and US Patent No. US628 5550. In addition, setting the power adjustment module / 〇〇 above or near the thermal energy management module 300 can also promote the effective capture and rejection of the thermal energy generated by 1 () 0 / circuit 112. Sheep is positive, and the circuit 112 shown in FIG. 2 is placed above the first interface of the substrate 102. = This embodiment can also promote the transmission of electrical power and the location of the device 200; Surface: ,,: And, it should be noted that the circuit 1 1 2 can also be placed in Figure 4 = second Above the interface. This architecture can, for example, enhance the thermal energy capture and rejection capabilities of the circuit relative to the power adjustment module 100, and can strengthen the signal conduction between the signal tracks on the device 2000 and the printed circuit board 400 # In addition, the structure shown in FIG. 4 can also be adapted to the packaging of the device 2000 = 1 ya and can reduce the heat of the power adjustment module 100 and the consumption device 200. The embodiment of FIG. 4 can also adapt to the manufacturing restrictions of the circuit 1 12 of the power adjustment module 100. *, The extension circuit 112 can also be placed on the first and second interfaces at the same time: the door can be placed above the first and second interfaces at the same time-the layout can be added =: the power adjustment needs of the clothing can be considered for power The power of the adjustment module 100 ::, it ’s important to note that, in addition to the power adjustment module 100 to perform the filter function, the additional separate power power adjustment element can also use similar conventional systems Method to place. In this case, the power rate adjustment module 100 will not perform all the power adjustment functions of the system 10
200302960 五、發明說明(17) ί件率;模組1〇°僅會配合分離電力功率調整 來執行電壓及電:的二:離電力1力率調整元件可以用 一個夺统可瓜 /或附加調整功能。舉例來說, 個糸統可以利用一個主 个凡 一個外部供應功率的啟#功Iw /、有为離兀件)提供 100,隨㉟率调整。這個功率調整模組 在it個nY"對裝置20 0的功率提供區域性的功率調整。 包括裝置m 供應可以提供這料統中、 便仍然可以實ί ;而i此:Γ模組10°的許多優點 ,、 、 …、 匕二額外的分離電力功率調整元株 卻可此會增加整體系統的功率調整足跡。 電路112利用的這些參考電壓及電流可以利用許多方法 提供給或繞線至電路11 2的转宕分杜 斑/丨十 、们電反及電流可以利用功率及地點 ―官114a及114b提供給電路112,其乃是内嵌在半導體基底 102内部。這些功率及地點導管U4a&U4b乃是由功率及地 點穿孔108a及108b延伸、並且連接至電路112,誠如實施的 特定功率調整電路設計所規定。在這個實施例中,功率及地 點穿孔108a及l〇8b不需要延伸至半導體基底1〇2的整個長度 (如第2圖所不)、,因為功率及地點導管114a&114b可以在 基底102内部達成良好的連接。這些功率及地點導管丨丨“及 114b亦可以利用導電材料(舉例來說,金、銅、鋁、或高摻 質袓晶石夕)進行‘作、並且利用習知的半導體處理或製作技 術(舉例來說’習知的微影、兹刻、及沈積處;200302960 V. Description of the invention (17) The rate of the module; the module 10 ° will only perform the voltage and electricity in conjunction with the separation of the power and power adjustment: Second: the power rate adjustment element from the power 1 can be used to control the system and / or additional Adjustment function. For example, a system can use 100% of the external power supply (power, Iw, and other components) to provide 100, and adjust with the rate. This power adjustment module provides regional power adjustments to the power of the device at 200 nY. Including the device m supply can provide this material, it can still be implemented; and i this: many advantages of the 10 ° module, the additional separation power and power adjustment elements can increase the overall System power adjustment footprint. These reference voltages and currents used by the circuit 112 can be provided to or wound around the circuit 112 by a number of methods. 10. Electricity and current can be provided to the circuit using power and location-officials 114a and 114b 112, which is embedded in the semiconductor substrate 102. These power and location conduits U4a & U4b are extended from the power and location perforations 108a and 108b and connected to the circuit 112, as specified by the specific power adjustment circuit design implemented. In this embodiment, the power and location perforations 108a and 108b need not extend to the entire length of the semiconductor substrate 102 (as shown in Figure 2), because the power and location conduits 114a & 114b can be inside the substrate 102 Reach a good connection. These power and location conduits and 114b can also be made using conductive materials (for example, gold, copper, aluminum, or highly doped sparlite), and use conventional semiconductor processing or fabrication techniques ( For example, 'the familiar lithography, grave, and Shen Jichu;
第24頁 200302960Page 24 200302960
請茶考第6圖,功率及地點導管114a及1141)的形成亦可 以更加面向半導體基底102的介面(但是仍然位於基底1〇2内 部)°在這個實施例中,功率及地面穿孔1〇8a及1〇81)亦可以 延伸至半導體基底1〇2的整個或幾乎整個長度,由於功率及 地點導管11 4a及11 4b會連接至更靠近基底1〇2的介面表面的 電路112。第6圖的這些功率及地點導管n4a及1141)可以由功 率及地點穿孔l〇8a及108b延伸(未示於第6圖中)、並且連 接至電路112 ’其亦是製作於基底1〇2的介面附近。這些功率 及地點導管11 4a及114b可以利用習知的處理及製作技術、利 用導電材料(舉例來說,金、銅、鋁、或高摻質複晶矽)加 以製作。 第4及7圖係表示對電路11 2供應功率及地點的另一種方 法。在這些實施例中,功率及地點乃是利用習知的繞線連結 技術提供給電路112,其乃是利用第4圖所示的習知繞線 及連結焊墊1 2 2。熟習此技藝者當瞭解,經由電路板4 〇 〇 (或 功率供應,圖中未示)對電路i i 2供應功率及地點的方法還 可以利用許多其他技術。在電路丨丨2上提供功率及地點連接 的所有技術,無論是已知的或是未來發展得到的,均應該屬 於本發明的範圍内。 ~ ~ 如先前所述,電路11 2乃是利用習知方法調整功率、並 將這個需要功率傳送至裝置20 0。這個電路112 (舉例來說, 電壓調整器、旁路電容器、直流直流(DC—DC)轉換器°、及 /或交流直流(AC — DC )轉換器)亦可以利用習知技術及設Please refer to Fig. 6. The formation of the power and location ducts 114a and 1141) can also face the interface of the semiconductor substrate 102 (but still inside the substrate 102). In this embodiment, the power and ground perforation 108a And 1081) can also extend to the entire or almost the entire length of the semiconductor substrate 102. Since the power and location conduits 11a and 114b will be connected to the circuit 112 closer to the interface surface of the substrate 102. These power and location ducts (n4a and 1141) in Figure 6 can be extended by power and location perforations 108a and 108b (not shown in Figure 6) and connected to the circuit 112 'which is also made on the substrate 102 Near the interface. These power and location conduits 114a and 114b can be fabricated using conventional processing and fabrication techniques using conductive materials such as gold, copper, aluminum, or highly doped polycrystalline silicon. Figures 4 and 7 show another method of supplying power and location to the circuit 112. In these embodiments, the power and location are provided to the circuit 112 using a conventional winding connection technique, which uses the conventional winding and connection pads 1 2 2 shown in FIG. 4. Those skilled in the art should understand that the method of supplying power and location to the circuit i i 2 via the circuit board 400 (or power supply, not shown) can also utilize many other technologies. All technologies that provide power and location connections on the circuit, whether known or derived in the future, should fall within the scope of the present invention. ~ ~ As mentioned earlier, the circuit 112 uses conventional methods to adjust the power and transmits this required power to the device 200. This circuit 112 (for example, a voltage regulator, a bypass capacitor, a DC-DC converter, and / or an AC-DC converter) may also use conventional techniques and equipment.
第25頁 200302960 五、發明說明(19) ί曰(Ϊ ; D : f功率調整功能的習知互補式金氧半 以排列及互連,藉以在操作的所有時、=及=啟)力、 準備、及關閉期严曰],將適當的電麼及電流提供給裝置2〇〇。 功率調整模組1 〇 0的這個輪& 、 ^ ^ 、1U称出功及/或地點可以利用類 ^於^電路U2如供電路板4〇〇 (或功率供應 =功地點的技術,藉以提供或繞線至就 此而言,請參考第5圖,在一 _垂a " 士 衣置⑼υ就 出功率導營n Rpi ^ ^ 個只轭例中,電112乃是利用輸 ί t 輸出地點導管—、輸出功率穿孔118a、 及輸出地點穿孔11 8b,藉以供 丰牙孔11 8a 2〇〇。隨後,信號路徑便可以提率及ς或地點至裝置 及1 1 6b問的雷枚洁扭 捉供輸出功率及地點導管1 1 6a 及116=的電路連接至裝置2〇〇的功率及輸入。 或者,請繼續參考第5圖, 116a及U6b亦可以直接繞線 二:”地點¥官 對應於裝置200的功率及地㈣ 2的"面上方、匹配或 例中,穿孔118aM18b可以力的特定焊塾。在這個實施 導管U6a及116b會在沒略’因騎出功率及地點 200的適當功率及地點又輪入/兴接的情況下’被繞線至裝置 這個輸出功率及/ ¾地^ 牛歹· “ §兄,功率調整模組1 〇〇的 至裝置20。。 地點亦可以利用第6圖所示的方法繞線 乃是利用ΐ:6製圖作技輪/功率及地點導管116a、U6b及116c 裝置的丄形成於基底102内部、並且至對應於 10 6z。在這個實施例 ' l〇6x、l〇6y、及 中,輸出功率及地點穿孔並不是必需 第26頁 200302960 五、發明說明(20) 的,因為輸出功率及地點導管乃是直接繞 底102的介面上方、匹配或對土 的指定焊塾· 及116b可以經由導電材料(舉例來說,金鋁巧6 a 質複晶矽)加以製作。 銘次同# 另外,功率調整模組100的輸出功率及 f及地點乃是利用習知繞線連結技術提供給褒置㈣^出力 吕之,習知繞線1 2〇 (及連接焊墊,圖中未示 功率調整模組100的輸出互連至裝置2〇〇的適當輸入。…、 應該注意的是,功率調整模組100可以利用一個兩階段 處理力=:,其中,穿孔104及108 (及其 :互;導管114及116)係首先形成,然後,利用ί ϋϊϋ 晶體(CM〇S)或雙極性電晶體(BJT)處 ,的電路112再接著形成。事實上,應該瞭解的是,製作功 ^ §周整模組100的任何製作技術(及其中利用的材料),益 :疋已知#或是未來發展出來均應該屬於本發明的範圍 屮仕ί i ’應邊注意的’參考說明書内的所有實施例,孰習 带能夠明白及瞭解:仍有其他許多技術能夠將 包路12的凋整或輸出功率及地點提供至裝置2〇〇。奋 ?:瞭解的是,設計及製作焊墊、穿孔、導管、電路貝及繞 'u 11何技·,無論是現在已知的或是未來發展的,均 玄屬於本發明的範圍内;另外,應該瞭解的是,這些基Page 25, 200302960 V. Description of the invention (19) ί y (Ϊ; D: f) The conventional complementary metal oxide half of the power adjustment function is arranged and interconnected, so that at all times of operation, = and = Kai) force, Prepare, and shut down period strictly], provide appropriate electricity and current to the device 2000. This round &, ^ ^, 1U of the power adjustment module 1 00 can be used to output power and / or location, which can be used in the circuit U2 such as for the circuit board 400 (or power supply = work location technology, so that Provide or wind the wire. In this regard, please refer to Figure 5. In one example, the electric power output is n Rpi ^ ^. Location duct—the output power perforation 118a, and the output location perforation 11 8b, which can be used to enrich the teeth hole 11 8a 2 00. Then, the signal path can be improved and the location to the device and 1 1 6b Twist the circuit for the output power and location of the conduit 1 1 6a and 116 = to the power and input of the device 2000. Or, please continue to refer to Figure 5, 116a and U6b can also be directly wound 2: Corresponds to the power of the device 200 and the ground surface 2 "on the surface, matching or example, the specific welding hole can be perforated 118aM18b. In this implementation, the ducts U6a and 116b will be slightly different due to the power and location of the 200 In the case of appropriate power and location in turn / connection, it is' wound to the device this Output power and / ¾ ground 歹 Niu · "§ Brother, power adjustment module 100 to device 20. Place can also use the method shown in Figure 6 to wind the line is to use ΐ: 6 drawing as a technical wheel / Power and location ducts 116a, U6b, and 116c devices are formed inside the substrate 102 and correspond to 10 6z. In this embodiment '106x, 106y, and, the output and location perforations are not necessary Page 26, 200302960 V. Description of the invention (20), because the output power and location of the duct is directly above the interface of the bottom 102, matching or specified welding to the soil, and 116b can pass through conductive materials (for example, gold Aluminum alloy 6 a-quality polycrystalline silicon) was made. 铭 次 同 # In addition, the output power, f, and location of the power adjustment module 100 are provided to the device using conventional winding connection technology. It is known that the winding 1220 (and the connection pads are not shown in the figure. The output of the power adjustment module 100 is interconnected to the appropriate input of the device 200. It should be noted that the power adjustment module 100 can use a two Stage processing power = :, of which perforations 104 and 108 (And: mutual; conduits 114 and 116) are formed first, and then the circuit 112 is formed next using a ϋϊϋ crystal (CMOS) or a bipolar transistor (BJT). In fact, it should be understood that Production skills ^ § Any production technology (and materials used in it) of the whole module 100, benefit: 疋 known # or future development should belong to the scope of the present invention. With reference to all the embodiments in the description, the training tape can understand and understand that there are still many other technologies that can provide the aging or output power and location of the packet path 12 to the device 200. Fen ?: It is understood that the design and production of solder pads, perforations, conduits, circuit shells, and coils, whether known or developed in the future, are all within the scope of the present invention; It should be understood that these bases
第27頁 200302960 五、發明說明(21) 及繞線連結中利用的任何 發展的,亦應該屬於本發 材 明 底、焊墊、穿孔、導管、電路、 料’無論是現在已知的或是未來 的範圍内。 本發明係特別有適合用 言,將功率調整元件設置成 本足跡可以讓積體電路裝置 舉例來說,外部靜態或動態 杰’精以降低戒與記憶體 更快速的系統操作。 於空間限制的環境中。就此而 與積體電路裝置基本上相同的基 四周的間隙能夠提供其他用途。 記憶體可以設置為更接近微處理 通k的移動時間。這亦可以獲致 这個功率調整模組10〇亦可以設置於裝置2〇〇及雷踗祐 400間,如第3圖所示。在^言個〜二衣^川及電路板 士月敕y &彳n n °貝知例中,弟2圖所示的功率 口周整权組1 0 0的一個架構乃异鉍盘 干 外,這些穿孔亦可以促進了別的以 _ 风退衣置20 0所利用(但不為功率蜩敕 :、、且100所利用)信號的電性連接,舉例來說,動態隨機存 :二己憶f (DRAM)或靜態隨機存取記憶體(SR 置的貧料及位址信號。 G U篮衣 if π 功率調整模組1 00亦可以設置於裝置200及孰能管 及7圖所示。有鑑於功率調㈣ =動電性層(舉例來說,電路112) 0是與電路板侧分離, Q此在這個電性層及電路板400間形成分離電性連接便成為 =需。如先前所述,這可以利用繞線連結12〇 (如第4及7圖 斤不)、或其他現在已知的或未來發展的互連技術加以完 成,並且,這些均應該屬於本發明的範圍内。 在特定情況下,熱能管理元件300最好能夠設置為遠離Page 27, 200302960 V. Description of the invention (21) and any developments used in the winding connection should also belong to the background of the hair material, solder pads, perforations, conduits, circuits, materials, whether they are now known or Within the future. The present invention is particularly suitable. Setting the power adjustment element to a cost footprint allows integrated circuit devices to be integrated. For example, external static or dynamic features can be used to reduce system speed and memory operation. In space-constrained environments. In this regard, the gap around the substrate, which is substantially the same as that of the integrated circuit device, can provide other uses. The memory can be set closer to the moving time of the micro processor k. This can also be obtained. This power adjustment module 100 can also be installed in the device 200 and Lei Yueyou 400, as shown in Figure 3. In the example of the two-year-old and two-year-old Chuan and the circuit board Shiyue y & 彳 nn ° Beijing example, the structure of the power port week weighting group 100 shown in Figure 2 is different from the bismuth disk. These perforations can also promote the electrical connection of other signals that are used by _ wind return clothing 20 0 (but not for power 蜩 敕:, and 100), for example, dynamic random storage: two self Memory f (DRAM) or static random access memory (SR set the lean material and address signal. GU basket clothing if π power adjustment module 1 00 can also be set in the device 200 and the energy tube and 7 as shown in the figure. Power modulation = dynamic electrical layer (for example, circuit 112) 0 is separated from the circuit board side, and Q becomes a required electrical connection between this electrical layer and the circuit board 400. As described previously This can be accomplished using wire-wound connections 12 (as shown in Figures 4 and 7), or other interconnection technologies now known or developed in the future, and these should all fall within the scope of the invention. In the case, the thermal energy management element 300 should preferably be set away from
200302960 五、發明說明(22) 系統10的其他元件。就此而言,熱能管理模組3〇〇可以曰一 個能夠讓氣體在系統1 0的元件上方行進的風扇,& ^一 模組100及裝置200所生的熱能。這種架構可以促9 二 空間限制環境中的利用,同時亦可以在微小足跡中二= 的功率調整功能。在這個實施例中,這個遠離設 埶j 理模組300可以在不干擾周邊設備(諸如:記憶體二: 存裝置)的其他系統需求下情況,放置在襞置^附斤"绪 個具有足夠體積(用以放置風扇)的區域中。0附近'一 另外,在特定實施例中,實施一個更緊宓 处# 組3 0 0可能會較第3圖所示的習知直尾::更、:::模 舉例來說’如接下來將要提到,利用一個具有。 =捕捉兀件捕捉及移除裝置2〇〇及/或 ==$的 會更為㈣。隨後,這個敎能可 2:生的熱旎亦 其相對於裝置200可以是區域―個熱,絕元件’ 上,應該瞭解的是,敎姑4戈遢離的,加以拒絕。事實 術,無論是現在Ξ知:=及拒絕裝置或子系統的任何技 範圍内。 的或未來發展的,均應該屬於本發明的 要的。舉例來=疋^况"下Λ熱能管理模組300亦可以是不必 的Crusoe處理器,你口入、冷部晶片”,諸如:Transmeta公司 可以由於其微:足跡::5現:熱能曲線。如是,系統1〇便 可攜式或手持式裝置^轭於空間限制的環境(舉例來說, 熱能力及空間考^。 中,並且不在乎熱能管理模組300的 因應本發明的另一個特徵,本發明乃是一個整合的功率 第29頁 200302960 五、發明說明(23) 及熱能管理模組,其可以將這個功率調整元件(亦即:功率 調整)及這個熱能管理元件(亦即:熱能捕捉、移除、及/ 或拒絕)的功能加入至單一個結構中。相對地,在先前討論 的實施例中,這些功率調整及熱能捕捉、移除、及拒絕的模 組係利用各種架構進行推疊的分離結構,與裝置2 〇〇分離, 藉以形成一個三層結構。因應本發明的這個特徵,這個功率 調整元件及這個熱能管理元件乃是加入在單一個結構中。如 ,,除先前所述的好處外,吾等亦可以得到額外好處,舉例 來說,大幅降低整體佔用體積,且這個消耗裝置、這個功率 調整模組及這個熱能管理模組間的直接物理接觸亦可 促進功率調整結構及/或消耗裝置的熱能捕捉及拒絕 另外,本發明的這個特徵亦可以提供這個組合功率 理模組的獨一無二包裝架構—消耗裝置結構羊岸; 提二二ί於這個消耗裂置及這個功率調整模組乃是;; t廷個整合功率調整及熱能管理模組的埶能管理处六; 二匕額外的熱能捕捉及拒絕元件亦將可以省略:么舌1 :特徵’因為在部分例子中,這個功率調整模二非:重? 可以會達成裝置20 0的操作溫度。 、、的知作溫)· 另外,使這個熱能管理模組”微型 率調整及熱能管理模組在高空間限制if促進整合〕 的熱能管理元件的熱能捕捉及埶能拒兄:的貫施。當模〗 以使這些熱能捕捉功能能夠 特欲係分離,藉 個結構",這個單一結構(㈣士周整功能整合在單· 弟8圖所不的功率調整200302960 V. Description of invention (22) Other elements of system 10. In this regard, the thermal energy management module 300 can be referred to as a fan capable of allowing gas to travel above the components of the system 10, and the thermal energy generated by the module 100 and the device 200. This architecture can promote the use of 9 2 space-constrained environments, and also the power adjustment function of 2 = in a small footprint. In this embodiment, the remote device management module 300 can be placed in the device without any interference with other system requirements of the peripheral devices (such as: memory two: storage device). Area of sufficient volume for the fan. Near 0 '-In addition, in a specific embodiment, implement a more tight place #group 3 0 0 may be straighter than the conventional straight tail shown in Figure 3: :: More, ::: Modulus for example' 如 接 ' I'm going to mention that using one has. = Capture element capture and removal device 2000 and / or == $ will be even more rampant. Subsequently, this energy can be 2: the heat generated by the device can be an area relative to the device 200-a heat, insulation element ', it should be understood that the aunt is rejected and rejected. Facts, whether it is now known: = and rejection of any technical scope of the device or subsystem. Anything or future development should belong to the invention. For example, = 疋 ^ 情 " The next Λ thermal energy management module 300 can also be an unnecessary Crusoe processor, you can use the mouth, the cold chip ", such as: Transmeta company can because of its micro: footprint: 5 now: thermal curve If so, the system 10 can be a portable or handheld device yoke in a space-constrained environment (for example, thermal capacity and space test), and does not care about another feature of the thermal management module 300 corresponding to the present invention The present invention is an integrated power. Page 29 200302960 V. Description of the invention (23) and thermal energy management module, which can integrate this power adjustment element (ie: power adjustment) and this thermal energy management element (ie: thermal energy (Capture, remove, and / or reject) functions are added to a single structure. In contrast, in the previously discussed embodiments, these power adjustment and thermal capture, remove, and reject modules are implemented using various architectures. The stacked separation structure is separated from the device 2000 to form a three-layer structure. In accordance with this feature of the present invention, the power adjustment element and the thermal energy management element It is added to a single structure. For example, in addition to the benefits described previously, we can also obtain additional benefits, such as greatly reducing the overall occupied volume, and the consumption device, the power adjustment module, and the thermal energy The direct physical contact between the management modules can also promote the capture and rejection of the power adjustment structure and / or the thermal energy of the consuming device. In addition, this feature of the present invention can also provide a unique packaging structure for this combined power management module—the structure of the consuming device. ; Mention two and two in this consumption split and this power adjustment module ;; t one of the energy management office integrated power adjustment and thermal management module six; two additional thermal energy capture and rejection components will also be able to Omit: Modal tongue 1: Features' because in some examples, this power adjustment module is not: heavy? Can reach the operating temperature of the device 20 0. In addition, make this thermal energy management module " Miniature rate adjustment and thermal energy management module in a high space limit if promoting integration] The thermal energy capture of the thermal energy management element and the ability to reject it: Implementation. In order to enable these thermal energy capture functions to be separated specifically, borrow a structure " this single structure (the integration of the function of the warrior's week is integrated in the power adjustment not shown in Figure 8)
第30頁 200302960 五、發明說明(24) " ' 及熱能官理模組1 0 0 0 )將可以實施在一個積體電路裝置的包 裝内部(請參照,舉例來說,第丨丨圖)。這些熱能^絕功能 可以利用置於這個裝置/包裝表面、或是置於裝置/包裝遠 處的一個熱槽加以完成。 請參考第8及9圖,功率調整及熱能管理模組1〇〇〇可以具 有功率調整元件1 1 0 0。這個功率調整元件丨丨〇 〇可以大體上類 似於第2至7圖所示的功率調整模組1〇〇、並且可以具有,舉 例來說,先前所述的穿孔、焊墊、及電路。為方便說明,功 率凋整元件1 1 〇 〇的細節及功能將不再這裡重覆。 這個功率调整及熱肖b管理模組1 〇 〇 〇亦可以包括熱能管理元件 1200。熱此管理元件1200乃是用來捕捉及移除裝置及/ 或功率调整模組1 1 〇 〇所生的熱能,藉以使裝置2 〇 〇及/或功 率调整模組11 0 0的溫度不會超過一個給定溫度。這個熱能管 理,件1 2 0 0亦可以用來拒絕這個熱能。如此,在操作中,熱 月匕官理tl件1 2 0 0便可以捕捉裝置2 〇 〇及功率調整模組丨丨〇 〇所 生的熱能、並且移除這個熱能,藉以使其能夠透過對流或一 個熱能拒絕元件(舉例來說,一個習知熱槽)散播至鄰近環 境。 功率調整及熱能管理模組1〇〇〇亦可以具有基底1〇2&,其 中形成功率調,模組丨〇〇〇的一個主要部分,以及基底1〇2b\、 其中形成熱能官理元件1 2 0 0的一個部分。這兩個基底可以利 用,舉例來說,玻璃及半導體結構的陽極(an〇dic )或熔解 (f us i on )連結、共溶(eu t ec t i c )連結、或黏著劑 (adhesive )連結,加以連結。另外,利用金屬結構亦可以Page 30, 200302960 V. Description of the invention (24) " 'and thermal energy management module 1 0 0 0) will be implemented inside the package of an integrated circuit device (please refer to, for example, Figure 丨 丨) . These thermal energy insulation functions can be performed using a heat sink placed on the surface of the device / package, or remotely from the device / package. Please refer to Figures 8 and 9. The power adjustment and thermal management module 1000 can have a power adjustment element 1 100. This power adjustment element can be substantially similar to the power adjustment module 100 shown in Figs. 2 to 7, and can have, for example, the aforementioned through holes, pads, and circuits. For the convenience of explanation, the details and functions of the power reduction element 11 100 will not be repeated here. The power adjustment and thermal management module 1000 may also include a thermal energy management element 1200. The heat management element 1200 is used to capture and remove the thermal energy generated by the device and / or the power adjustment module 1 1 00, so that the temperature of the device 2 0 and / or the power adjustment module 1 1 0 0 will not More than a given temperature. This thermal energy management piece 12 00 can also be used to reject this thermal energy. In this way, in operation, the thermal moon dagger 1200 pieces can capture the thermal energy generated by the device 2000 and the power adjustment module 丨 丨 〇〇 and remove this thermal energy so that it can pass through convection Or a heat rejection element (for example, a conventional heat sink) is spread to the surrounding environment. The power adjustment and thermal energy management module 1000 can also have a substrate 102, which forms a main part of the power modulation module 10000, and a substrate 102b, which forms a thermal energy management element 1 A part of 2 0 0. These two substrates can be used, for example, anodically or fus i on, glass, or eu tec tic, or adhesive bonding of glass and semiconductor structures. Connect. In addition, metal structures can also be used
II
31頁 200302960 五、發明說明(25) 利用溶接(welding)、焊接(soldering)、共溶連名士 (eutectic bonding)、或黏著劑(adhesive)加以連結。 這個組合基底102a及1 02b便可以形成功率調整及熱能管= 組1 0 0 0。 果 在這種架構中,在印刷電路板400及裝置200輸入^/輪出 的信號路徑間提供電性連接的介面穿孔可以利用兩個步驟加 以製作。首先,一個分離組合的介面穿孔會形成在功率調整 元件1100及熱能管理元件1200的各個基底中。隨後,當這兩 個基底連結時,基底l〇2a中的一個介面穿孔會匹配於基底 l〇2b中的對應介面穿孔,藉以形成模組1〇〇〇的介面穿孔。一 為加強基底102a及l〇2b中、這些介面穿孔間的電性連 續,中間介面焊墊可以置於基底1〇2&及1〇21)中、各個匹配介 面的表面。各個匹配介面上的焊墊,在這兩個基底連結後, 將會接觸另一匹配介面的對應焊墊。這種架構可以在匹配及 =面功率調整元件1 100及熱能管理元件12〇〇時提供更大的容 忍度’且如此,可以加強功率調整及熱能管理模組丨0 00,在 連結基底未能完美對齊時,的曝露介面間的電性連續。 Μ另外’在利用功率及地點穿孔將外部功率提供給功率調 整杈=11 0的那些例子中,吾等可以利用先前所述的製作技 術,藉以形成這些功率及地點穿孔。然而,在利用繞線連結 將外部功率提供給功率調整模組丨丨00的那些例子中,功率及 地點穿孔則不見得必要。 凊繼續苓考第8及9圖,在一個實施例中,熱能管理模組 1 2 0 〇可以具有一個微通道熱能交換器丨2丨〇,其具有複數個微Page 31 200302960 V. Description of the invention (25) It is connected by welding, soldering, eutectic bonding, or adhesive. This combined substrate 102a and 102b can form a power adjustment and thermal energy tube = group 1 0 0 0. In this architecture, an interface hole providing electrical connection between the printed circuit board 400 and the signal path of the input / output of the device 200 can be fabricated in two steps. First, a separate combined interface hole is formed in each substrate of the power adjustment element 1100 and the thermal energy management element 1200. Subsequently, when the two substrates are connected, an interface perforation in the substrate 102a will match the corresponding interface perforation in the substrate 102b, thereby forming an interface perforation of the module 1000. First, in order to enhance the electrical continuity between the interface perforations in the substrates 102a and 102b, the intermediate interface pads can be placed on the surfaces of the mating interfaces in the substrates 102 and 102). After the two pads are connected, the pads on each matching interface will contact the corresponding pads on the other matching interface. This architecture can provide greater tolerance when matching and matching the area power adjustment element 1 100 and the thermal energy management element 12 00 '. In this way, the power adjustment and thermal energy management module 丨 0 00 can be strengthened. When perfectly aligned, the electrical interface between the exposure interfaces is continuous. Μ In addition, in those cases where power and location perforations are used to provide external power to the power adjustment fork = 110, we can use the production techniques described previously to form these power and location perforations. However, in those examples where a winding connection is used to provide external power to the power conditioning module 00, power and location perforations are not necessary.凊 Continuing the tests of Figures 8 and 9, in one embodiment, the thermal energy management module 1220 can have a micro-channel thermal energy exchanger 丨 2 丨 〇, which has a plurality of micro
第32頁 200302960 五、發明說明(26) '— -- 通道1 220。這個微通道熱能交換器121〇亦可以包括唧兮 1 2 3 0、流體入口 1 2 4 0、流體出口 1 2 5 0、及管道j 2 6 〇,二 供流體至微通道1 2 2 0。 胃 & 請參考第10A及10B圖,微通道熱能交換器121〇可以3 , 舉例來說,一個微製作的半導體基底、機械製作的金=, 底、或機械製作的玻璃基底。第l〇A及log圖乃是分別用來人 紹一個範例微通道結構1 220的俯視及剖面圖。熱管理元件 1200的基底可以具有蝕刻於介面中的一個微通道i22〇—】及 1220 — 2的圖案。這些微通道1220—1及122〇〜2亦可以因應 功率調整元件11 0 0特定區域的熱能移除需求,排列在熱能〜管 理元件1 200的介面上方。微通道結構122〇的密度可以^對應 於預測或量測的超額熱能來源區域增加,或者,微通道12^ 一 1及1 2 2 0 — 2的繞線亦可以設計,藉以將微通道熱能交換器 1 2 1 0、由入口至出口的溫度梯度降低及/或最小化。這些微 通道122〇 — umo —2的寬度、深度、及形狀亦可以設;^及 製作,藉以改善裝置的溫度一致性或滿足裝置2 〇 〇及/或功 率調整元件11 00上方的熱點。事實上,微通道結構122〇的形 成及排列亦可以經由美國專利申請案(Kenny等人於2 0 0 2年1 月19日提申的”電滲性微通道冷卻系統,,申請案)所述的熱能 模型工具進行輔助设計或決定。另毁埶 121〇及微通道122〇-U 1 22 0 — 2的許多不同類型=換佈 局、及架構則會在Kenny等人於2〇〇2年1月19日提申的美國專 利申請案中進行說明及介紹。Page 32 200302960 V. Description of the invention (26) '--Channel 1 220. The micro-channel thermal energy exchanger 121〇 may also include a heat pump 1230, a fluid inlet 1240, a fluid outlet 1250, and a pipe j 2 6o, and the fluid is supplied to the microchannel 1220. Stomach & Please refer to Figures 10A and 10B. The microchannel thermal energy exchanger 121 can be 3, for example, a microfabricated semiconductor substrate, a mechanically fabricated gold substrate, or a mechanically fabricated glass substrate. The 10A and log diagrams are respectively a top view and a cross-sectional view of an example microchannel structure 1 220. The substrate of the thermal management element 1200 may have a pattern of microchannels i22- and 1220-2 etched into the interface. These micro-channels 1220-1 and 1220 ~ 2 can also be arranged above the interface of the thermal energy ~ management element 1200 in response to the thermal energy removal requirements of a specific area of the power adjustment element 1 100. The density of the microchannel structure 122 can be increased corresponding to the predicted or measured area of the excess thermal energy source, or the windings of the microchannel 12 ^ -1 and 1 2 2 0 — 2 can also be designed to exchange the microchannel thermal energy. 1 2 1 0, the temperature gradient from the inlet to the outlet is reduced and / or minimized. The width, depth, and shape of these micro-channels 122-umo-2 can also be set; and manufactured to improve the temperature consistency of the device or to meet the hot spots above the device 200 and / or the power adjustment element 1100. In fact, the formation and arrangement of the microchannel structure 1220 can also be approved by the United States Patent Application ("Electroosmotic Microchannel Cooling System", filed by Kenny et al. On January 19, 2002, application) The thermal model tools described above are used to assist in design or decision. In addition, many different types of 埶 121〇 and microchannels 122〇-U 1 22 0-2 = change layout, and architecture will be described in Kenny et al. Description and introduction in the US patent application filed on January 19,
Kenny等人於2002年1月19曰提申的美國專利申請案(發Kenny et al. U.S. patent application filed on January 19, 2002 (issued
200302960 五、發明說明(27) 明名稱為π電滲性微通道冷卻系統”申請案)尚未取得申請序 號。這個Kenny等人提申的美國專利申請案,在本說明書 中,將稱為’’ Kenny專利申請案π。並且,這個Kenny專利申請 案,總體觀之,亦會提供本說明書參考。 應该注意的是’微通道1 2 2 0亦可以延伸至功率調整元件 11 0 0的介面内部。另外,微通道結構丨22 〇亦可以同時形成在 熱管理模組1 2 〇 〇的第一及第一匹配介面上方。在這個實施例 中’微通道熱能交換器1 2 1 〇可以更有效地捕捉及移除裝置 2 0 0及功率調整元件11 〇 〇所生的熱能,其部分原因乃是這個 熱此父換器1 2 1 0與裝置2 〇 〇及功率調整元件11 〇 〇間的更親密 物理接觸。 ’山 這個微通道熱能交換器1210亦可以,利用微通道122〇 _ 1及1 220 — 2,具有至少一個流體路徑,如第1〇A圖所示。這 些獨立路徑可以因應這個應用裝置的需求及/或設計,連、接 至不同唧筒1 230及/或不同熱能拒絕元件141〇。如先前所 述,微通道熱能交換器121〇及微通道1 22 0 — 1及1 220_ 多不同類型的排列、佈局、及架構均已在卜⑽丫專利 ° 中加以說明及介紹,其可以進一步參考。 明系 這個唧筒1 2 3 0可以是任何類型的唧筒裝置,1可 捕捉裝置2 0 0及/或功率調整元件丨丨〇〇產生熱能所需=2、 動及壓力。就此而言,唧筒可以是一個電滲性類型、 置,誠如Kenny專利申請案所說明及介紹。這種電滲性同衣 的唧筒裝置並不在此詳細說明,其對應討論將可以泉*、 Kenny專利中請案。 夕巧200302960 V. Description of the Invention (27) The application name “π electroosmotic microchannel cooling system” has not been obtained. The US patent application filed by Kenny et al. Will be referred to in this specification as “ Kenny patent application π. In addition, this Kenny patent application, as a whole, will also provide a reference to this specification. It should be noted that 'microchannel 1 2 2 0 can also be extended to the inside of the interface of the power adjustment element 1 1 0 0 In addition, the micro-channel structure 丨 22 〇 can also be formed on the first and first matching interface of the thermal management module 12 2000 at the same time. In this embodiment, the 'micro-channel heat exchanger 1 2 1 〇 can be more effective Ground capture and removal of the thermal energy generated by the device 2000 and the power adjustment element 1 1 00 is partly due to the heat generated between the parent converter 1 2 1 0 and the device 2 0 0 and the power adjustment element 1 1 0 0 Closer physical contact. 'The microchannel heat exchanger 1210 can also use microchannels 122〇_1 and 1 220-2, with at least one fluid path, as shown in Figure 10A. These independent paths can be In accordance with the requirements and / or design of this application device, connect and connect to different drums 1 230 and / or different thermal energy rejection elements 141〇. As mentioned earlier, microchannel heat exchanger 121〇 and microchannel 1 22 0 — 1 And 1 220_ Many different types of arrangements, layouts, and architectures have been described and introduced in the Bu Yi Ya patent °, which can be further referenced. Ming Department of this tube 1 2 3 0 can be any type of tube device, 1 can The capture device 2000 and / or the power adjustment element 丨 丨 〇〇 required to generate thermal energy = 2, kinetic and pressure. In this regard, the cartridge can be of an electroosmotic type, as described in the Kenny patent application and Introduction. This kind of electroosmotic jacket device is not described in detail here, and its corresponding discussion will be filed in the patent of Kenny * and Kenny.
第34頁 200302960 五、發明說明(28) 第8及9圖的這個功率調整及熱能管理模組1〇〇〇可 功率调整το件11 〇〇在裝置2〇〇附近的有效 管理元件测捕捉及移除功率調整元件u⑽及;^供置^ 所生^的額外好處。另外’藉著將這些功整 理元件放置於裝置2 0 0下方的單一個模組内,裝置2〇〇的、 表面(舉例來說,上表面)便卩 * 沾 上Γ:驟ΐΐ Ϊ;)及,或記憶體裝置的放置。這個 放置步驟亦可以讓裝置200的表面 =例土說:額外的熱能管理元件(如第3圖=二 )或弟二熱能管理元件(如第17Α及ΐ7β圖所示)^ ”、、 做成另Γ ’第8及9圖的功率調整及熱能管理模組亦可以促進 做為一個分離裝置的有效包袭。就此而言,請參;進 12Α圖,模组^号第11及 包穿1 30 0、中^ 加入至一個具有接腳13⑽的典型電子 體:中,八可以调整適應熱能管理元件1 2 0 0所需的流 第11圖實施例所示的這個裝置議可以利用—種習知的 冰σ :方、球狀連結的固定架構至一個電性互連陣列。另 者镇裝置2〇0亦可以利用類似於先前所述的方法(請參 加描^、裝置〇中利用一個面向下方、球狀連結的固定 二-:广提供幾個額外的好處,包括··提供裝置20 0及熱管 親宓桩2〇°、(及填滿流體的微通道1 220 )熱能捕捉能力間6^ lt ,以及提供裝置2 〇 〇的背面存取,藉以用於其他功 月匕,如先前所述。Page 34, 200302960 V. Description of the invention (28) The power adjustment and thermal energy management module in Figs. 8 and 9 can be adjusted with power το 11 〇〇 Effective management components near the device 2000 Remove the power adjustment elements u 调整 and ^ for additional benefits of ^^. In addition, 'by placing these work finishing components in a single module below the device 2000, the surface (for example, the upper surface) of the device 2000 will be stained with Γ: Γ ΐΐ;) And, or the placement of memory devices. This placement step can also make the surface of the device 200 = for example: an additional thermal energy management element (as shown in Figure 3 = 2) or a second thermal energy management element (as shown in Figures 17A and 7β) ^ ", made In addition, the power adjustment and thermal energy management modules in Figures 8 and 9 can also promote effective package attack as a separate device. In this regard, please refer to Figure 12A, module ^ No. 11 and package wear 1 30 0, Medium ^ Add to a typical electronic body with pin 13⑽: Medium, eight can be adjusted to meet the required flow of the thermal energy management element 1 2 0 0 The device shown in the embodiment of Figure 11 can be used-kind of practice Known ice σ: square, spherically connected fixed architecture to an electrical interconnection array. In addition, the town device 2000 can also use a method similar to the previously described (please participate in the description, device 0 uses an orientation Bottom, spherical connection fixed II: Wide provides several additional benefits, including providing device 20 0 and heat pipe prosthetic pile 20 ° (and micro channel 1 220 filled with fluid) thermal energy capture capacity 6 ^ lt, and provides back access for device 2000, for which Dagger power month, as previously described.
第35頁 200302960 五、發明說明(29) 第12A圖實施例所述 向上*、繞線連接的固定架V種習知的面 孔可以是不必要的,的二接:在這個實施例中,這些互連穿 連結至裝置2 0 0。然而/、、:知^的繞線連結技術可以提供電性 處,包括,舉例來說,將了貫施 裝1 300中,藉以讓功率;;ς =…、能捕捉元件加入至包 〃手5周整兀件1 1 〇 〇與 此外,這個實施例亦可以得到另一;置2°〇保持接近。 200、功率調整元件i7 ‘·提供裝置 觸古藉以使裝置_及,或功率調整元=〇】=二 以有效地捕捉(利用微通道122〇中的流牛 生的熱月匕可 施例的另一個好處是,裝置2。心^^ :其他的裝置,;:r (諸如:ccd )、及/或光學開關。 先干成像衣置 在想在粗糙環境中實施裝置2〇〇 1300可能是較為有利的選擇。如 2了 3包裝 可以遠垃一加心朴 戈弟圖所不,包裝1 30 0上 組1〇〇〇的整人功及Ϊ:提供一個密封環境,其中,模 觸。這個遮i_;:不透 r:=2°亦可能在紅外線或可見以=(如=裝 置見)、。將功率調整及熱能管理功能整合在這 ^ ^可以讓熱感應裝置發揮最佳操作,如成像陣列。 裴置200直接固定在基底(舉例來說,印刷電路板4〇〇 第36頁 200302960 五、發明說明(30) )上方的情況下,利用固定 將動作流體供應至熱能管理 擇。睛參考第13圖,這個動 成的通道或管道1260、由功 方提供給微通道熱能交換器 接(solder)、及/或黏著 或内嵌管道1 260直接固定至 (圖中未不)及流體出口 以促進模組1 000在晶片移載 實施。 模組1 0 0 0的 元件1 2 0 0可 作流體乃是 率調整及熱 1 2 1 0。壓合 劑(a d h e s i 微通道熱能 (圖中未示 (pick -pi 基底中的製作通道, 能是較為有利的選 利用基底中内嵌或形 能管理模組1 0 0 0的下 (press fit )、焊 ve)可以將這些通道 交換器1 2 1 〇的流體入 )。第1 3圖的架構可 ace )構件處理中的 應該 行技術有 口,藉以 並連接至 以利用焊 亦可以在 孔連接管 兩個表面 能交換器 的或是未 第13 整及熱能 情況中。 置的基底 注意的是,將通道 很多種,舉例來說 讓管道片段及/或 定位。這些連結可 接(solder )或黏 模組1 0 0 0的頂面或 道,精以將一個配 。事貫上,將内喪 1 2 1 0流體入口及輸 來發展的,均應該 圖的内嵌通道架構 管理模組1 0 0 0被包 如第1 3圖所示,這 中、内嵌或形成的 或管道1 260連結至模組〗000的可 ’吾專可以在模組1 〇 〇 〇中形成開 其他聯結器能夠插入模組1 〇 〇 〇、 以是壓合(press fit)、或可 著劑(adhesive)。或者,吾等 底面形成開口,並且利用一個開 件連結至這些開口上方的一個或 通道或管道1260固定至微通道熱 出的所有技術,無論是現在已= 屬於本發明的範圍内。 亦可以適用於消耗裝置與功率調 裳、且這個包裝被固定在基底的 個動作流體可以利用固定消耗裝 通道或管道,提供給功率調整^Page 35, 200302960 V. Description of the invention (29) The upwardly-oriented, winding-connected fixing brackets of the conventional V-type faces described in the embodiment of FIG. 12A may be unnecessary. Two connections: In this embodiment, these The interconnect is connected to the device 2000. However, the winding connection technology of / ,, and: ^ can provide electrical properties, including, for example, the implementation of 1 300 in order to allow power; ς = ..., can capture components added to the bag 5 weeks, the whole piece 11 00 and in addition, this embodiment can also get another; set 2 ° 0 to keep close. 200. The power adjustment element i7 '· provides the device with touch to make the device _, or the power adjustment element = 〇] = 二 to effectively capture (using the hot moon moon of the cow in the microchannel 122〇 can be implemented. Another benefit is device 2. Heart ^^: Other devices;: r (such as: ccd), and / or optical switch. Dry the imaging garment first. Implementing device 20001300 in a rough environment may be More favorable choices. For example, 2 packs and 3 packs can be far removed, and Pak Gedi's package is not as good as the pack. The pack's entire power of 1 000 and 1 packs can be provided: a sealed environment, in which the mold touches. This cover i_ ;: opaque r: = 2 ° may also be infrared or visible with = (eg = see device). Integrating power adjustment and thermal management functions here ^ ^ can make the best operation of thermal sensing devices, such as imaging Array. In the case where the Pei 200 is directly fixed on the substrate (for example, printed circuit board 400, page 36, 200302960 V. Description of the invention (30)), the fixed fluid is used to supply the operating fluid to the thermal energy management option. Figure 13: This moving channel or pipe 1260 The microchannel heat exchanger is provided with a solder, and / or an adhesive or embedded pipe 1 260 is directly fixed to (not shown in the figure) and the fluid outlet to promote the implementation of the module 1000 in the wafer transfer. Module 1 0 0 0's components 1 2 0 0 can be used for fluid rate adjustment and heat 1 2 1 0. Pressing agent (adhesi microchannel thermal energy (not shown in the figure) (pick-pi substrate production channel can be a more favorable choice) By using the built-in or shape energy management module 1 0 0 0's (press fit) and welding ve), these channel exchangers 12 1 0 can flow in). The architecture of Figure 13 can be a) components There should be a technique in the process, which can be used to connect to the two surface energy exchangers in the hole connection pipe or use the welding. In the case of the 13th and the thermal energy. Note that there are many channels These are, for example, channel segments and / or positioning. These links can be connected to the top or channels of the solder or sticky module 1 0 0 0, so as to match one. In the end, the internal funeral 1 2 1 0 Fluid inlets and transmissions should be developed with embedded channel architecture Module 1 0 0 0 is packaged as shown in Figure 13. This, embedded or formed or pipeline 1 260 is connected to the module [000] can be formed in the module 1 000 Other couplings can be inserted into the module 1000, so as to press fit, or adhesive. Or, our bottom surface is formed with an opening, and an opening is connected to one or more above these openings. All techniques for fixing channels or pipes 1260 to microchannel heat out, whether they are now = fall within the scope of the invention. It can also be applied to the consumption device and power adjustment, and the packaging fluid is fixed to the substrate. The action fluid can be used for power adjustment using a fixed consumption channel or pipe ^
200302960200302960
熱能管理模組的微通道埶 些通道(或内爭a、t ^這 件可以用來將這 流體J Sr;)曰直接固定在這個微通道熱能交換器的 通道(或内、f f &個包裝的流體入σ及出口。在這些 子中,在這個的流體入口及出口的例 中這些通道〔式= 的管道及通道可以提供基底 間的互連。或&迢)及微通這熱能交換器流體入口及出口 另外,這個 供模組1 0 G 〇操作 更及時的冷卻及 率詰整及熱能管 來說,溫度、壓 應器1 270乃是用 資訊(舉例來說 便會繞線至控制 1 0 0 〇功能的封閉The microchannels of the thermal energy management module (or internal disputes a, t ^ This piece can be used to fix the fluid J Sr;) is directly fixed to the channel (or internal, ff & Packaged fluid enters σ and outlet. In these cases, in this example of fluid inlet and outlet, these channels (the channels and channels of the formula = can provide the interconnection between the substrates. Or & 迢) and micro-pass the thermal energy Exchanger fluid inlet and outlet In addition, for the module 10 G 〇 for more timely cooling and rate trimming and thermal energy pipes, the temperature, the reactor 1 270 is information (for example, it will be wound Close to control 1 0 0 〇 function
功率調整及熱能管理模組丨〇 〇 〇亦可以具有提 參數資訊的電路或裝置,用以達成更^效及 功率調整。請參考第丨4及丨5圖,本發明的功 理模組1 0 0 0可以額外具有感應器丨2 7 〇 (舉例 力、及流動感應器)及控制器128〇。這些感 來提供表示裝置2 0 〇及模組1 〇 〇 〇操作條件的 ’操作溫度)。感應器1 270的信號,隨後, 裔1 2 8 0 ’藉以提供功率調整及熱能管理模組 迴路控制。 特別是,當感應器丨2 7 〇具 制為1 2 8 0係可以利用這個溫度 整熱能管理元件12〇〇、功率調 的操作。在這些情況下,功率 操作於熱能控制模式,其中, 或更多個溫度感應器所量測到 制裔1 2 8 0的回授信號。這個控 k供的資訊,藉以決定,舉例 有一個溫度量測感應器時,控 感應器提供的資料來變動或調 整元件1100、及/或裝置200 調整及熱能管理模組1 〇 〇 〇乃是 散佈在整個模組1 〇 〇 〇中、一個 的溫度變動便可以提供做為控 制器1 2 8 0可以利用感應器1 2 7 0 來說,模組1 0 0 0及/或裝置The power adjustment and thermal energy management module 丨 〇 〇 〇 can also have circuits or devices to provide parameter information to achieve more efficient and power adjustment. Please refer to FIGS. 4 and 5, the power module 1 0 0 0 of the present invention may additionally have a sensor 2 7 0 (for example, a force and flow sensor) and a controller 128 0. These senses provide the 'operating temperature' indicating the operating conditions of the device 2000 and the module 100). The signal of the sensor 1 270 is then used to provide power adjustment and thermal management module loop control. In particular, when the sensor 2700 is equipped with a 1280 series, this temperature can be used to adjust the operation of the thermal management element 1200 and the power adjustment. In these cases, the power is operated in a thermal control mode, in which the feedback signal of the system 1 2 0 0 is measured by one or more temperature sensors. This control information is used to decide, for example, when there is a temperature measurement sensor, the data provided by the control sensor is used to change or adjust the component 1100, and / or the device 200 adjustment and thermal energy management module 1 〇〇〇 Scattered in the entire module 1000, one temperature change can be provided as a controller 1 2 0 0 can use the sensor 1 2 70, for the module 1 0 0 0 and / or device
第38頁 200302960 五、發明說明(32) 20 0的平均溫度及相對於模組1 0 0 0及/或裝置2 0 0的溫度空間 變動。因應這些資訊,控制器1 2 8 0便可以調整通過微通道熱 能交換器1 21 0的微通道1 220的流體流率。另外,這個控制哭 1 280亦可以控制唧筒1 230的操作、或調整經過微通道熱能交 換裔的不同通道形式的流體分佈,藉以調整微通道1220中的 流體流率。 另外’控制1 2 8 0 ’在決定 ㈣/凰,又巫敬狀恶傻, 以警告裝置200可能會超過(或已經超過)其額定操作溫 度。藉此’裝置2 0 0便可以啟動一個低功率模式,藉以降低 其操作溫度及功率消耗。再者,消耗較少的功率亦會使裝置 200及功率調整元件11〇〇產生的熱能降低。這個裝置,因 應與其操作溫度有關的資訊,便可以進入一個關閉程序,藉 以做為保護性的措施。因應溫度變動的其他動作係說明於 Kenny專利申請案中,其亦可以提供進一步的參考。 感應器1 270 (舉例來說,溫度、壓力、及/或流動感應 器)在基底102a及l〇2b内部的放置或位置可以基於數個考量 口素。舉例來說,將溫度感應器,相對於這些微通道1 2 2 〇及 電路112及/或裝置2〇〇的預測或量測熱源,橫向放置可能是 相當有利的選擇。另外,將溫度感應器放置在基底丨〇2&及 102b的不同深度(垂直位置)亦可能是相當有利的選擇。第 1 一〇a、l〇b、14及15圖係表示在功率調整元件丨1〇〇及熱能管理 :, 1 200中、置於各種位置的感應器127〇。這些感應器η” 2 7 Ιίΐ供表示裝置200及模組1 000在特定區域的操作條 件(舉例來說’溫度)至控制器128〇。P.38 200302960 V. Description of the invention (32) The average temperature of (20) 200 and the spatial variation of the temperature with respect to the module 1 0 0 and / or the device 2 0 0. In response to this information, the controller 1280 can adjust the fluid flow rate through the microchannel 1 220 of the microchannel heat exchanger 1 210. In addition, this control cry 1 280 can also control the operation of the drum 1 230, or adjust the fluid distribution in different channel forms through the micro-channel thermal energy exchange, thereby adjusting the fluid flow rate in the micro-channel 1220. In addition, the control 1 2 8 0 ′ is deciding to be ㈣ / phoenix, and it looks like a fool, to warn that the device 200 may exceed (or have exceeded) its rated operating temperature. By this means, the device 200 can activate a low power mode, thereby reducing its operating temperature and power consumption. Furthermore, consuming less power will also reduce the thermal energy generated by the device 200 and the power adjusting element 1100. This device can enter a shutdown procedure based on information related to its operating temperature as a protective measure. Other actions in response to temperature fluctuations are described in the Kenny patent application, which can also provide further reference. The placement or location of sensors 1 270 (for example, temperature, pressure, and / or flow sensors) within substrates 102a and 102b can be based on several considerations. For example, placing a temperature sensor laterally relative to the predicted or measured heat source of these microchannels 1220 and the circuit 112 and / or the device 200 may be a very advantageous option. In addition, placing temperature sensors at different depths (vertical positions) of the substrates 02 and 102b may also be a very advantageous option. Figures 10a, 10b, 14 and 15 show the sensors 1270 placed in various positions in the power adjustment element 100 and the thermal energy management 1200. These sensors are used to indicate the operating conditions (for example, 'temperature') of the device 200 and the module 1000 in a specific area to the controller 128.
第39頁 200302960 五'發明說明(33) 感應器1 270的詳細討論、操作、及其放置或位置的各種 J ^兄明於Kenny專利申請案中,其亦可以提供進一步的 =注意的是,雖然第9及15圖的實施例僅介 同(亦即:唧筒1 230 ),作是功率古月敕爲也处Μ 亦可以且古夕於加i仁疋力羊口周正及熱能管理模組1000 λ 尸、ί夕於一個的唧筒機構。額外的唧筒機構亦可以實 ^,错以在模組1 000的特定區域中提供 ς 流動控制。這在裝置200及/或功率調整元件11〇〇呈^^期體 熱點的情況中格外重要。舉例來說,多於—個㈣筒可以與 施於微通道熱能交肖器1210具有分離且獨立的微通道12心 ϊ ’如第1()Α圖所示。另外’利用多於-個°即筒機 構的其他貫施例亦詳細說明sKenny專利申請案中,豊 以提供進一步的參考。 /、丌了 如,,總括來說,第丨5圖的功率調整及熱能管理模組 1 0 0 0乃是用來提供裝置20 0的功率調整功能、以及將裝置 及/或功率調整元件1100維持於可接受溫度範圍内的冷 能。攻個控制器1 280,配合感應器127〇,乃是用來完成 200及功>率調整及熱能管理模組丨〇〇〇操作參數變動的分析、 偵測。這類變動可能會導因於裝置2〇〇所利用皂率變動。 此,熱能管理元件1 20 0便可以調整冷卻能力(舉例來說,曰 用流體唧筒的控制信號來增加流體流率),藉以將裝置2 〇 〇 的溫度維持在可接受的溫度範圍内。 另外,這個功率調整及熱能管理模組i 〇 〇 〇亦可以具有電 t感應器,藉以偵測裝置2 0 0的電流消耗。請參考第丨6圖,Page 39, 200302960 Five 'Invention Description (33) Detailed discussion, operation, and placement or position of various sensors 1 270 J ^ brother Ming in the Kenny patent application, which can also provide further = Note that, Although the embodiments in Figs. 9 and 15 only refer to the same (ie, the tube 1 230), it is also possible to use the power of the ancient moon, and it is also okay, and the ancient evening is added to the sheep's mouth and the thermal management module. 1000 λ corpse, 夕 Xi Yu in a single tube mechanism. An additional cartridge mechanism can also be implemented, providing the flow control in a specific area of the module 1000. This is particularly important in the case where the device 200 and / or the power adjustment element 1100 are hot spots. For example, more than one capsule can have a separate and independent microchannel 12 core from the microchannel thermal energy converter 1210, as shown in Figure 1 () A. In addition, other implementation examples that utilize more than one tube mechanism also detail the sKenny patent application for further reference. / 、 For example, in a nutshell, the power adjustment and thermal energy management module 1 0 0 0 of FIG. 5 is used to provide the power adjustment function of the device 200, and the device and / or the power adjustment element 1100. Cold energy maintained within an acceptable temperature range. Attacking a controller 1 280 and cooperating with a sensor 1270 is to complete the analysis and detection of 200 and work > rate adjustment and thermal energy management module 丨 00 operation parameter changes. Such changes may be caused by changes in the soap rate used by the device 2000. Therefore, the thermal management element 120 can adjust the cooling capacity (for example, using a control signal of the fluid cartridge to increase the fluid flow rate), thereby maintaining the temperature of the device 2000 within an acceptable temperature range. In addition, the power adjustment and thermal energy management module i 〇 〇 〇 can also have an electric t sensor to detect the current consumption of the device 2000. Please refer to Figure 6
/;IL/; IL
200302960 五、發明說明(34) 電流感應器1 2 9 0可以内嵌於丰墓辨i 本+爿士罢οπηη /丄門甘入於牛蜍體基底102内部,藉以提供 表不裝置2 0 〇及/或電路丨丨2雷法 ^ ^ ^ ^ z4耗的貧訊至控制器1 2 8 0。200302960 V. Description of the invention (34) The current sensor 1 2 9 0 can be embedded in the tomb to identify the i + shishi π πηη / 丄 门 gan is inserted into the base of the toad body 102 to provide a table device 2 0 〇 And / or circuit 丨 丨 2 lightning method ^ ^ ^ ^ z4 consumes poor signal to the controller 1 2 8 0.
Ik後,廷個控制器1 280便可以剎田、π τ , _ , 整熱能官理το件I 2 〇 〇的握柞。斑^ 士 1 9 Q 〇 ^ '0,1 ^ ^ 作舉例來說,因應電流感應器 1 2 9 (Μ貞測的電流需求變動, ^19^0 ^ ^ ^ ^ ^ t 控制為1 280便可以增加或減少唧 同i Z d U的>;|L體流動,籍以纲敕也 .t .> 精以凋整熱能管理元件1 2 0 0的流體冷卻 求變動,㈣:二I 偵測及分析裝置200的電流需 件1100的溫度變動。 予頁moo及/或功率調整元 凊繼續參考第1 6圖,電产片 * - ,4- 1 1 Λ η ,, 电机感應器1 290亦可以偵測經過功 率调整兀件11 〇 〇 (舉例央% 不m n 雪4 一加, j來说,電麼調整裝置)的電路1 1 2的 電流。這個經過電路1 1 ? & fγ w 2 電流可以表示裝置200的電流及/ A功率扁耗及需求。這個批在丨 %氺、i ^ y t a 控制器亦可以利用感應器1 290的資 及/或功率誦敫开杜1 1 nn乍稭以增加或降低因為裝置200 ^ ^ J Γ 的電流消耗變動所生的溫度變動。 另外,這個控制器亦可以利用這個資 變動所生的熱能捕捉及拒絕需求。 、疋口為電“耗 基於經過這些電壓調整妒 宗雷厭#敕突ΛΑ丄t L正褒置的電流置測,吾等便可以決 疋電壓调整器的功率消耗及奘 在丨1哭1 9 q η处私、1〜& 褒置2 0 0的功率消耗,藉以使控 制σσ 1 2 8 0月b夠決定整體功車、、由紅并务 口口、1 Ο ·« η ΛΛ M A 、 + 4耗亚據以調整微通道熱能交拖 裔1 2 1 0的熱能捕捉及移除沾a 、 炉捕招及銘力。微通道熱能交換器m〇的執 此捕捉及移除i力亦可以藉著改㈣ 的流率(舉例來說,調整9Qn & = 甲動作流體 敗 v al ^ 正即同1 230的輸出流率)而加以碉 整。另外,控制器1 28 0亦可以,A娃切刀以口周 J以,在捕捉及移除裝置2〇〇及模After Ik, the controller 1 280 can hold the grip of I2, π, τ, _, and thermal energy management το. Spot ^ 士 1 9 Q 〇 ^ '0,1 ^ ^ For example, in response to the current demand change of the current sensor 1 2 9 (Μ 贞), ^ 19 ^ 0 ^ ^ ^ ^ ^ t is controlled to 1 280 It is possible to increase or decrease the flow of the L body with i Z d U, so as to outline it. T. ≫ The fluid cooling of the thermal management element 1 2 0 0 is required to be changed precisely. Detects and analyzes the temperature change of the current demand piece 1100 of the device 200. The moo and / or power adjustment element of the pre-continued page continues to refer to FIG. 16, the electric chip *-, 4- 1 1 Λ η ,, motor sensor 1 290 can also detect the current through the circuit 1 1 2 of the power adjustment element 11 00 (for example, the central% mn snow 4 one plus, j, the electric adjustment device). This passes through the circuit 1 1? &Amp; fγ The w 2 current can represent the current and power consumption of the device 200 and the demand and power consumption of the device. This batch of controllers can also use the resources and / or power of the sensor 1 290 to open up 1 1 nn At first, the temperature change caused by the current consumption change of the device 200 ^ ^ J Γ can be increased or decreased. In addition, this controller can also use the heat energy generated by the change in the resource. Catching and rejecting the demand. The power consumption is based on the current measurement of the positive current setting after these voltage adjustments are made. We can determine the power consumption and voltage of the voltage regulator. Crying at 丨 1 1 9 q η, 1 ~ & set the power consumption of 2 0 0, so that control σσ 1 2 8 0 b is enough to determine the overall work car, and by the red parallel port, 1 〇 · «Η ΛΛ MA, +4 is used to adjust the thermal energy of the microchannel to capture and remove the thermal energy of 1 2 1 0 and remove the stains, furnace traps, and power. The microchannel thermal energy exchanger m〇 captures this And removing the i-force can also be adjusted by changing the flow rate (for example, adjusting 9Qn & = A action fluid failure v al ^ is the same as the output flow rate of 1 230). In addition, the controller 1 2 0 0 is also possible, A baby cutting knife with the mouth around J with, in the capture and removal device 2000 and the mold
第41頁 200302960 五、發明說明(35) 組1 0 0 0的熱能後,調整熱能拒絕能力。改變微通道熱能交換 器1 2 1 0熱能捕捉及移除能力的其他技術則詳細說明於、 專利申請案中,其亦可以提供進一步的參考。 ny 在第1 6圖的實施例中,感應器丨2 9 〇乃是與功率調敕一 1100的電壓調整器整合在一起。應該注意的是,控制^ ^ 亦可以由裝置20 0在操作期間的功率消耗,直接決定裝 的功率需求及/或消耗。隨後,這個控制器丨28〇便可以 這個資訊來決定或實施適當的動作,舉例來說,調整 通道熱能交換器1210的熱能捕捉及移除能力 ^ = 能拒絕能力,如先前所述。、 、似糸統的熱 可以::在=〇意二是’控制器1 280執行的功能/操作亦 了 乂貝細在裝置200内部。在這種情況下, ^’舉例來說’感應器127。(舉例來說,溫度、d 先%:戈電流感;器i29°的資訊、或是有關時脈速率、3 Ϊ: U 理…及類比電流輸出 州便可以調整功率調整元年i⑽的功力/傳^;猎此,裝置 這個裝置200亦可以調整熱能管 。另外, 除、及/或拒絕能力。利用裝置2 〇= °〇的熱能捕捉、移 的部分或全部功能/操作可以促進0裂來執;亍控制器1280執行 說,時脈速率)的利用、以及裝置咖可供應^訊」舉例來 用。 T既存運异貧源的利 另外,對於執行重覆或可預期功 可以預測裝置的功率消耗變動、並 2置而&,吾等亦 用i個系統的動態模型Page 41 200302960 V. Description of the invention (35) After the thermal energy of group 1 0 0, adjust the thermal energy rejection capability. Other technologies that change the thermal energy capture and removal capabilities of the microchannel heat exchanger 1 2 10 are described in detail in the patent application, which can also provide further reference. ny In the embodiment of FIG. 16, the inductor 2 9 0 is integrated with the voltage regulator of the power regulator 1100. It should be noted that the control ^ ^ can also be directly determined by the power consumption and / or consumption of the device by the power consumption of the device 200 during operation. Subsequently, the controller 280 can use this information to determine or implement appropriate actions, for example, to adjust the thermal energy capture and removal capabilities of the channel heat exchanger 1210 ^ = ability to reject, as previously described. The heat of the system is as follows: The function / operation performed by the controller 1 280 is also in the meaning of 0, and it is contained inside the device 200. In this case, ^ 'for example,' sensor 127. (For example, temperature, d first%: Ge current sense; information about i29 °, or clock rate, 3 Ϊ: U theory ... and analog current output states can adjust the power to adjust the power of the first year i⑽ / Pass this, the device 200 can also adjust the thermal energy tube. In addition, the ability to remove, and / or reject. Use the thermal energy of the device 2 〇 = ° 〇 to capture or move some or all of the functions / operations can promote 0 cracks For example, the controller 1280 executes the clock rate, and the device can supply the information. T Existing benefits from different sources of transportation In addition, for performing repeated or predictable functions, it is possible to predict the power consumption changes of the device, and arranging & we also use a dynamic model of i systems
第42頁 200302960 五、發明說明(36) 產生熱能捕捉及拒絕管理的最佳或加強策略,藉以將事 20 0内部的溫度時態或空間變動最小化。這個裝置2〇〇2 控制器1 280亦可以實施複雜的控制演算法,#以讓裝置心 及/或控制器1 280可以決定熱能管理元件12〇〇的適當 二1吏裝置200及/或功率調整元件11。〇的溫度能夠維持 ,極乍車,。另外,這個資訊亦可以用來發展一個熱能捕 足、,絕的操作程序,藉以在裝置2 〇〇的溫度變動及功 熱能管理模組1 0 00的操作成本間取得最佳平衡。這類操 ==200的消耗功率、運算複雜性、及/或較佳流 動及熱能範圍内的操作。 9nn /外,裝置200及/或控制器1 280亦可以利用表示裝置 2 00 #作的資訊來預測裝置2〇〇内部的功率消耗的空間分佈。 二!!來說、,,倘若裝置200是一個微處理器,則這個浮點處理 态、功率消耗,其可能會佔據這個微處理器的小部分表面, ^ t暫f超過這個微處理器其他部分的功率消耗。在這類例 ’延個微處理器的子系統溫度將會快速上升至超過建 二仑酿度的水準。如此,裝置20 0及/或控制器1280最好能 裝置20 0的密集功率消耗、並藉以提供必要的熱能捕 此力,其對於裝置200的密集功率消耗區域係呈現動態。 因應本發明的另一個特徵,本發明乃是一個封閉迴路的 凋整及熱能管理系統。請參考第丨7 A圖,在一個實施例 敕只封閉迴路的功率調整及熱能管理系統2〇〇〇係具有功率調 π…、此答理模組1 〇 〇0,如先前所述,並搭配熱能捕捉及拒 、、巴果組1 400。在這個實施例中,功率調整及熱能管理模組Page 42 200302960 V. Description of the invention (36) The best or strengthened strategy for generating thermal energy capture and refusal of management, in order to minimize the temporal or spatial variation of temperature within the event. This device 2000 controller 1 280 can also implement complex control algorithms, so that the device core and / or controller 1 280 can determine the appropriate thermal management element 12 00. Device 200 and / or power Adjusting element 11. 〇The temperature can be maintained. In addition, this information can also be used to develop a thermal energy capture, absolute operating procedure, in order to achieve the best balance between the temperature change of the device 2000 and the operating cost of the thermal energy management module 1000. This type of operation == 200 consumes power, computational complexity, and / or operations in the range of better flow and thermal energy. Besides 9nn /, the device 200 and / or the controller 1 280 can also use the information representing the device 2 00 # to predict the spatial distribution of the power consumption inside the device 2000. Two, for example, if the device 200 is a microprocessor, the floating-point processing state and power consumption may occupy a small part of the surface of the microprocessor. Part of the power consumption. In this type of example, the temperature of the subsystem of a microprocessor will rise rapidly to a level higher than that of the second gallon. As such, the device 200 and / or the controller 1280 preferably can consume the dense power consumption of the device 200 and thereby provide the necessary thermal energy to capture this force, which presents dynamics to the dense power consumption area of the device 200. According to another feature of the present invention, the present invention is a closed loop aging and thermal energy management system. Please refer to Figure 7A. In one embodiment, only a closed loop power adjustment and thermal energy management system 2000 series has a power adjustment π, this answering module 1 000, as described earlier, and is matched with Thermal energy capture and rejection, Bago group 1,400. In this embodiment, the power adjustment and thermal management module
200302960 五、發明說明(37) ' ' "" - 1000乃是置於印刷電路板400表面、裝置2〇〇乃是置於功率調 整及熱能管理模組1 0 〇 〇表面、且熱能捕捉及拒絕模組丨4 〇 〇乃 疋置於裝置200表面。在這種架構中,功率調整及熱能管理 模^的功率調整元件11 00乃是置於裝置2〇〇附近,藉以提供 先前所述的功率調整好處。另外,微通道熱能交換器1210/乃 是置於功率調整元件11 〇 0的附近,藉以促進加強的熱能捕 捉、移除、及拒絕,藉以將功率調整元件丨丨〇 〇的溫度維持在 一個可接受的範圍内。隨後,熱能管理元件丨2 0 0捕捉的熱能 便會提供(經由流體流動)給熱能捕捉及拒絕模組i 4 〇 〇的熱 能拒絕元件1410。 … 這個熱此捕捉及拒絕模組1 4 0 0乃是利用熱能拒絕元件1 & 1 〇 (如具有直尾翅的熱槽所示)及熱能捕捉元件丨42〇拒絕熱能 管理元件1 2 〇 〇所生的熱能。這個熱能拒絕元件1 4 1 〇可以利用 許多不同類型的熱能拒絕技術,包括··在高表面積結構(諸 如:直尾翅中的流體通道)上具有流體流動路徑的設計,如 K e η n y專利申請案所說明及介紹。κ e n n y專利申請案所說明及 介紹的全部熱能捕捉、移除及拒絕技術亦可以提供進一步的 蒼考。 熱能捕捉元件1 4 2 0具有一個微通道熱能交換器1 4 3 0,其 可以促進裝置20 0所生熱能的區域化熱能捕捉、移除、及拒 絕(搭配熱能拒絕元件1 4 1 〇 )。這個微通道熱能交換器1 4 3 0 具有複數個微通道1 440 (其操作中具有流體),藉以完成裝 置的有效熱能捕捉。這個微通道熱能交換器1 430 ,包括微通 道1 440 ’可以利用與微通道熱能交換器121〇及微通道122〇相200302960 V. Description of the invention (37) '' " "-1000 is placed on the surface of the printed circuit board 400, and the device 200 is placed on the surface of the power adjustment and thermal energy management module 100, and the thermal energy is captured. And the rejection module 丨 400 is placed on the surface of the device 200. In this architecture, the power adjustment element 1100 of the power adjustment and thermal management module is placed near the device 200, thereby providing the power adjustment benefits previously described. In addition, the micro-channel heat exchanger 1210 / is placed near the power adjustment element 1 1 0 0 to promote enhanced thermal energy capture, removal, and rejection, thereby maintaining the temperature of the power adjustment element 1 Accepted. Subsequently, the thermal energy captured by the thermal energy management element 丨 2 0 0 will be provided (via fluid flow) to the thermal energy rejection element 1410 of the thermal energy capture and rejection module i 4 00. … The heat capture and rejection module 1 4 0 0 is the use of thermal energy rejection element 1 & 1 (as shown by the heat sink with straight tail fins) and thermal energy capture element 42 4 rejection of thermal energy management element 1 2 〇 〇 Generated thermal energy. This thermal energy rejection element 1 4 1 〇 can utilize many different types of thermal energy rejection technology, including ... Designs with fluid flow paths on high surface area structures (such as fluid channels in straight fins), such as the Keen ny patent Description and introduction of the application. All of the thermal energy capture, removal, and rejection technologies described and introduced in the κeny patent application can also provide further research. The thermal energy capturing element 1420 has a micro-channel thermal energy exchanger 1430, which can promote the regionalized thermal energy capture, removal, and rejection of the thermal energy generated by the device 200 (with the thermal energy rejection element 1410). This micro-channel thermal energy exchanger 1 4 3 0 has a plurality of micro-channels 1 440 (with fluid in operation) to complete the effective thermal energy capture of the device. This micro-channel thermal energy exchanger 1 430 includes micro-channel 1 440 ′ and can be used with the micro-channel thermal energy exchanger 121〇 and the micro-channel 122〇
第44頁 200302960 五、發明說明(38) 同的方法及材料加以製作。 另外’這個微通道熱能交換器1 4 3 0亦可以因應裝置2 〇 〇 特定區域的熱能移除需求,藉以,舉例來說,安排在熱能捕 捉元件1420的介面。微通道144〇的密度可以在對應預期或量 測過量熱源的區域内增加。另外,微通道丨44〇的繞線亦可以 進行設計,藉以將微通道熱能交換器丨42 〇入口及出口的溫度 梯度降低及/或最小化。微通道1 4 4 〇的寬度、深度、及形狀 亦可以進行設計及製作,藉以改善裝置2 〇〇中的裝置溫度一 致性。事實上,微通道1 440的形狀及佈局亦可以透過Kenny 專利申請案所述的熱能模型工具進行輔助設計。另外,微通 道熱能交換器1 4 2 0及微通道1 4 4 0的許多不同類型排列、佈 局、架構及设計技術亦說明及介紹於K e n n y專利申請案中, 其亦可以提供進一步的參考。 類似於先前對於熱能管理模組丨2〇〇所述,微通道熱能交換器 1 4 2 0的微通道亦可以同時置於熱能捕捉元件丨4 2 〇的兩個介面 上’藉以加以熱能產生裝置的熱能捕捉、移除、及/或拒 絕。另外,應該注意的是,微通道熱能交換器丨43〇亦可以架 構為一個微通道柱子的陣列。就此而言,一個垂直通道陣列 係仏向互連於熱能捕捉元件1 4 2 0的一個介面(或兩個介面) 上方。這種架構更可以加強裝置2 〇 〇及/或功率調整及熱能 官理模組1 0 〇 〇所生熱能的熱能捕捉、移除、及/或拒絕。 請繼續參考第1 7 A圖,在這個實施例中,卿筒1 2 3 〇係置 於熱能捕捉及拒絕模組1 4 0 0及熱能拒絕元件1 4 1 〇間。這個哪 茼1 2 3 0可以是一個電滲性°即筒裝置,如κ e η n y專利申請案所Page 44 200302960 V. Description of the invention (38) The same method and materials are used to make it. In addition, this micro-channel heat exchanger 1 430 can also respond to the heat removal requirement of a specific area of the device 2000, so that, for example, it is arranged at the interface of the heat capture element 1420. The density of the microchannel 1440 can increase in areas corresponding to expected or measured excess heat sources. In addition, the winding of the microchannel 44o can also be designed to reduce and / or minimize the temperature gradient at the inlet and outlet of the microchannel thermal energy exchanger 42o. The width, depth, and shape of the microchannel 1440 can also be designed and fabricated to improve the consistency of the device temperature in the device 2000. In fact, the shape and layout of the microchannel 1 440 can also be assisted by the thermal modeling tool described in the Kenny patent application. In addition, many different types of permutations, layouts, architectures, and design techniques for microchannel heat exchangers 1420 and microchannels 1440 are also explained and introduced in the Kenny patent application, which can also provide further reference . Similar to the previous description of the thermal energy management module 丨 200, the microchannels of the microchannel thermal energy exchanger 1420 can also be placed on the two interfaces of the thermal energy capture element 4200 at the same time to use the thermal energy generating device. Thermal energy is captured, removed, and / or rejected. In addition, it should be noted that the microchannel thermal energy exchanger 43 can also be constructed as an array of microchannel pillars. In this regard, a vertical channel array is interconnected vertically above one interface (or two interfaces) of the thermal energy capture element 142. This architecture can further enhance the capture, removal, and / or rejection of the thermal energy generated by the device 2000 and / or power adjustment and thermal energy management module 1000. Please continue to refer to FIG. 17A. In this embodiment, the cylinder 1230 is disposed between the thermal energy capturing and rejecting module 1440 and the thermal energy rejecting element 1410. This 茼 1 2 3 0 can be an electroosmotic ° cylinder device, such as the κ e η n y patent application.
第45頁 200302960 五、發明說明(39) 述。另外,唧筒1 2 3 〇的斗夕丁 受,其包括Kenny專利申t/电不同類型架構及設計亦可以接 可以提供進一步的參考/案所述的那些架構及設計,且亦 應該注意的是,系綠 獨立的流體冷卻迴路V萨::可以利用複數個唧筒及/或 能捕捉能力提供獨立Cf1。。。内部、不同位置的熱 案中詳細說明,且亦可;個特徵亦在Ke_專利申請 』以k供進一步的參考。 請參考第17B圖,在特定卜主、口 設置於遠離“2_的Λ ,3將熱能拒絕元件141 〇 幻,、他兀件可以是相當有利的選擇。這 類^可以促進系謂◦。在”限制環境巾的制,並 ^在微小足跡中提供足夠的功率調整及熱能管理。當熱能拒 絶兀件1410係遠離地設置時,管道126〇便可以提供裝置2〇〇 及功率調整元件121〇加熱流體的流體路徑至熱能拒絕元件 1410。在這個實施例中,這個遠離設置的熱能拒絕元件ΐ4ι〇 可以放置在具有足夠體積(用以放置直尾翅陣陣,其可以具 有了個風扇)的區域中,並且不會干擾到裝置2〇〇附近的周、 邊系統(諸如:記憶體或資料儲存裝置)的其他系統需求。 事貝上’如先前所述’在特定情況下,熱能拒絕功能亦可能 不是必要的。 第8至17Β圖的功率調整及熱能管理模組1〇〇〇乃是用來介 紹置於熱能管理元件表面的功率調整元件。在第丨8圖的實施 例中,熱能管理元件11⑽乃是置於功率調整元件1 2 〇 〇的表 面。在這個實施例中,熱能管理元件1 20 0可以更有效地捕捉 及移除裝置2〇〇所生的熱能,因為微通道與裝置2〇〇的鄰近。Page 45 200302960 V. Description of Invention (39). In addition, the Dou Xi Ding Shou of the tube 1 2 3 0, which includes different types of architecture and design of Kenny patent application / electricity can also be connected to those architectures and designs that can provide further references / cases, and it should also be noted that , Is a green independent fluid cooling circuit V Sa :: can provide independent Cf1 by using a plurality of drums and / or capture ability. . . It is described in detail in the hot cases inside and at different positions, and it is also possible; this feature is also used in Ke_patent application "for further reference. Please refer to FIG. 17B. In a specific place, the mouth is set away from "2_", 3 will reject the thermal energy rejection element 141, and other components can be quite advantageous choices. This type of ^ can promote the system. The "limits the production of environmental towels, and provides sufficient power adjustment and thermal management in a small footprint." When the heat rejection element 1410 is disposed away from the ground, the pipe 1260 can provide the device 200 and the power adjustment element 121 to heat the fluid path of the fluid to the heat rejection element 1410. In this embodiment, the heat-rejecting element 远离 4ι, which is far away from the setting, can be placed in an area with sufficient volume (for placing straight-tailed arrays, which can have a fan), and will not interfere with the device 2 〇 Other system requirements for nearby weekly and peripheral systems (such as memory or data storage devices). On the matter, as described previously, in certain circumstances, the thermal rejection function may not be necessary. The power adjustment and thermal management module 1000 in Figs. 8 to 17B is used to introduce the power adjustment element placed on the surface of the thermal energy management element. In the embodiment shown in FIG. 8, the thermal energy management element 11 ′ is placed on the surface of the power adjustment element 12 2000. In this embodiment, the thermal energy management element 120 can capture and remove the thermal energy generated by the device 2000 more effectively because the microchannel is adjacent to the device 200.
200302960 五、發明說明(40) 另=,功率調整元件11 00的電路112的熱能捕捉及移除亦可 以、、、持相對不變。如此,熱能管理元件丨200便可以更有效地 捕捉裝置t〇〇及功率調整元件丨丨〇〇所生熱能的捕捉及移除。 因^丄在這個實施例中,吾等便可以因為熱能管理元件1 1 00 所行的熱旎捕捉及移除功能,而不需要加入一個熱能拒絕 元件(舉例來說,一個熱槽,圖中未示)。 斤應该 >主意的是’如同第8圖所示的實施例,微通道丨2 2 〇 (第18圖所示)亦可以延伸至功率調整元件11〇〇的介面中。 另$ ’微通這結構1 2 2 0亦可以同時形成在熱能管理模組丨2 〇 〇 =第一及第二匹配介面上。在這種情況下,微通道熱能交換 1 2 1 0甚至可以更有效地捕捉及移除裝置2 〇 〇及功率調整元 件11 〇〇的熱能,其部分原因為這個微通道熱能交換器1210與 裝置20 0及功率調整元件11〇〇的更親密物理接觸 除了熱能考量以外,功率調整元件的電路仍然會緊鄰這 個裝置’藉以提供先前所述的全部功率調整好處。 第1 8圖的這個功率調整及熱能管理模組丨〇 〇 〇亦可以利用 第8圖所示功率調整及熱能管理模組1〇〇〇的相同方法加以製 作及實施。另外,第18圖的功率調整及熱能管理模組1〇〇〇亦 可以具有第8至1 7 Β圖所示功率調整及熱能管理模組1 〇⑽的全 部特定、附加物、屬性、及實施例。就此而言,第丨8圖的功 率調整及熱能管理模組1 0 〇 〇可以具有,舉例來說,一個控制 器、量測或偵測裝置2 ο 〇及/或功率調整元件11 〇 〇操作條件 的參數感應器(舉例來說,溫度、壓力、及流動)、及監控 裝置2 0 0及/或功率調整元件11 0 0消耗電流的電流感應器 第47頁 200302960200302960 V. Description of the invention (40) In addition, the thermal energy capture and removal of the circuit 112 of the power adjustment element 11 00 can also be relatively unchanged. In this way, the thermal energy management element 丨 200 can more effectively capture and remove the thermal energy generated by the device t00 and the power adjustment element 丨 丨 〇〇. Because in this embodiment, we can use the thermal energy capture and removal function of the thermal energy management element 1 1 00 without adding a thermal energy rejection element (for example, a heat sink, the figure Not shown). It should be > the idea is that, like the embodiment shown in FIG. 8, the micro channel 2 2 0 (shown in FIG. 18) can also be extended to the interface of the power adjustment element 1100. In addition, the micro communication structure 1 2 2 0 can also be formed at the same time on the thermal energy management module 丨 2 00 = the first and second matching interfaces. In this case, the microchannel thermal energy exchange 1 2 1 0 can even more effectively capture and remove the thermal energy of the device 2000 and the power adjustment element 1 100, in part because of the microchannel thermal energy exchanger 1210 and the device. The more intimate physical contact between the 200 and the power adjustment element 1100, in addition to thermal considerations, the circuit of the power adjustment element will still be in close proximity to this device, thereby providing all the power adjustment benefits previously described. The power adjustment and thermal energy management module shown in FIG. 18 can also be manufactured and implemented by using the same method of the power adjustment and thermal energy management module shown in FIG. 8. In addition, the power adjustment and thermal energy management module 1000 shown in FIG. 18 may also have all the specifics, additions, attributes, and implementations of the power adjustment and thermal energy management module 1 shown in FIGS. 8 to 17B. example. In this regard, the power adjustment and thermal management module 100 in FIG. 8 can have, for example, a controller, measurement or detection device 2 ο 〇 and / or power adjustment element 11 〇〇 operation Conditional parameter sensors (for example, temperature, pressure, and flow), and monitoring devices 2 0 0 and / or power adjustment elements 1 1 0 0 current sensors for current consumption page 47 200302960
另外,第 筒,藉以 有微小足 入這個模 1 0 0 0亦可 或功率調 另外 施成第11 例相同。 1 0 0 0的全 1 8圖的功 例的特色 微通道 藉以協 這個功 通道, 的獨立 及熱能 架構, 所示功 前所述 組中。 覆。 18圖的功率調整及熱 提供動作流體至這些 跡的電滲性唧筒), 組。另外,第1 8圖的 以具有複數個獨立微 整元件11 0 0指定區域 ,第1 8圖的功率調整 、12A及12B圖的包裝 事實上,第8至17B圖 部特色及屬性,如先 率調整及熱能管理模 及屬性將不再加以重 模組1 0 0 0亦可以具有。即 (包括,舉例來說,具 助在空間限制環境中加 率調整及熱能管理模組 藉以允許裝置200及/ 熱能捕捉及移除。 管理模組1 0 0 0亦可以實 其大體上與第8圖實施 率調整及熱能管理模組 ’均會同等地應用於第 為精簡目的,這些實施 請繼縯參考第18圖,功率調整及熱能管理模組1〇〇 ,利用第2至17B圖所述的全部相同技術在裝置2〇〇上進行信 號繞線。另外,功率及地點亦可以利用相同技術,在電路° lj2及裝置200上繞線。舉例來說,第18圖的實施例可以利 第6圖所述的繞線技術,其中,輸出功率及地點導管係利用 習知製作技術形成在基底中、並繞線至對應裝置2〇〇的功率 及地點輸入的預定焊墊。在這種情況下,輸出功率及地點 管係直接繞線至裝置2 0 0的功率及地點輸入。 在另一個實施例中,這個功率調整元件及這個埶能管理 元件的微通道結構乃是形成在相同的基底中〜而不是形成在 ,個基底102a及l〇2b中,如先前所述及第8及18圖所示。請 參考第1 9 A圖,Μ通道結構1 2 2 0及功率調整元件11 〇 〇係製作In addition, the first tube, with a small foot to enter the mold 1 0 0 0, or the power adjustment is the same as the 11th example. The features of the example of all the figures in the figure 1 0 0 0 are the micro channel and the independent and thermal architecture of this power channel. cover. Figure 18 shows the power adjustment and heat (osmotic cartridges that provide the working fluid to these traces). In addition, Figure 18 specifies the area with a plurality of independent fine-tuning elements 11 0 0, the power adjustment of Figure 18, and the packaging of Figures 12A and 12B. In fact, the features and attributes of Figure 8 to 17B are as follows. Rate adjustment and thermal management modules and attributes will no longer be re-modeled. 1 0 0 0 can also be provided. That is, (including, for example, the rate adjustment and thermal energy management module in a space-constrained environment to allow the device 200 and / or thermal energy capture and removal. The management module 1 0 0 0 can also be implemented substantially in line with the first The implementation rate adjustment and thermal energy management modules in Figure 8 will be equally applied to the first for streamlining purposes. For these implementations, please refer to Figure 18, the power adjustment and thermal energy management module 100, and use the information in Figures 2 to 17B All the same technologies described above are used for signal winding on the device 2000. In addition, the power and location can also be wound on the circuit ° j2 and the device 200 using the same technology. For example, the embodiment of FIG. The winding technology described in FIG. 6, wherein the output power and location duct is a predetermined pad formed in the substrate using conventional manufacturing technology and wound to the power and location input of the corresponding device 200. In this kind of In the case, the output power and location pipe is directly wound to the power and location input of the device 2000. In another embodiment, the micro-channel structure of the power adjustment element and the energy management element is formed in In the same substrate ~ instead of being formed in the substrates 102a and 102b, as described previously and shown in Figures 8 and 18. Please refer to Figure 19A, M channel structure 1 2 2 0 and power adjustment Element 11 〇〇 series production
200302960 五、發明說明(42) :ί:5 :。在這個實施例中,由於熱能管理元件及功率 调整兀件不需要在介面這個消耗裝置及另一:及力羊 說,一個印刷電路板)前,由 ^ 牛列來 組合的成本可以降低。另外,因為:^ :合’因士這個 耗裝置表面的熱能產生電路,消耗穿二:敎=2置於逆個消 相對於第9圖的實施例,亦可 ' 的外、'捕捉及移除, 的電路U2的熱能捕捉及移力除:可=夠功=元: 不f要,舉例來說,熱槽或風扇的曰額外:能 移除、捕捉、及拒絕能力。 π I ”、、此 請繼續參考第19Α圖,在這個實施例中,執能管理 測的微通這結構㈣亦可以利用f知的微通道製作技術及 (或1(議7專利申請案所述的其他技術加以製作,盆亦可以 ί:步的參考。隨後’功率調整元件1100的電路112便 ί 金氧半電晶體(c騰)及雙極性電晶 :上1 Λ二 以製作。在這個實施例中,這 形成後加以製作。連接這個穿孔的焊塾(若;籌㊁ 路112及微通道1 220的製作後加以製作。 』乂隹冤 應該注意的是,具有複數基底(亦即:1〇2& 功率調整及熱能管理模組1〇〇〇的全部特色、屬性、替代^的 案、及貫施例亦完全適用於第19A圖的實施例中。就此而 言,第19A圖的功率調整及熱能管理模組1〇〇〇可以具 例來說,參數感應器(舉例來說,溫度、壓力、流動 電 流感應器。另外,第19A圖的功率調整及熱能管理模組1〇〇〇200302960 V. Description of the Invention (42): ί: 5 :. In this embodiment, because the thermal energy management element and the power adjustment element do not need to be interfaced with this consumption device and another one: Heliyang said, a printed circuit board), the cost of assembling by the cows can be reduced. In addition, because: ^: combined with the heat-generating circuit that consumes the surface of the device, the consumption wears two: 敎 = 2 is placed in the reverse phase. Compared to the embodiment of FIG. 9, it can also be used to capture and move In addition, the thermal energy capture and displacement of the circuit U2 is divided by: can = enough work = yuan: It does not matter, for example, the heat sink or fan's extra: the ability to remove, capture, and reject. π I ”, please continue to refer to FIG. 19A, in this embodiment, the structure of the micro-channel that can manage the measurement can also use the micro-channel production technology and (or 1 The other techniques described above can be made, and the basin can also be used as a step reference. Subsequently, the circuit 112 of the power adjustment element 1100 will be a metal oxide semi-transistor (c-teng) and a bipolar transistor: 1 Λ 2 to make. In this embodiment, this is made after it is formed. The welded solder joint (if; the chip 112 and the microchannel 1 220 is connected and made after making it.) It should be noted that there is a plural base (that is, : All features, attributes, alternatives, and implementation examples of the power adjustment and thermal management module 1000 are also fully applicable to the embodiment of FIG. 19A. In this regard, FIG. 19A The power adjustment and thermal energy management module 1000 can be exemplified by parameter sensors (for example, temperature, pressure, flow current sensors. In addition, the power adjustment and thermal energy management module 1 of FIG. 19A 〇〇
第49頁 200302960 五、發明說明(43) 亦可以具有哪筒及複數個獨立的微通道,藉以達成裝置2 〇 〇 及/或功率調整元件1 1 〇 〇指定區域的獨立熱能捕捉及移除。 另外,第1 8 A圖的功率調整及熱能管理模組丨〇 〇 〇亦可以 實施成第11、12A、12B圖的包裝架構。事實上,第8至18圖 所示功率調整及熱能管理模組丨0 0 0,如先前所述,的全部°特 色及屬性,亦會同等適用於第丨9A圖的功率調整及熱能管理 模組。 請繼續參考第19A圖,功率調整及熱能管理模組1〇〇〇可 以利用先前所述的任何繞線技術,在裝置2 〇〇上進行信號繞 線。另外,功率及地點亦可以利用相同技術(包括第6圖戶^ 示及先前所述的技術),在電路112及裝置2〇〇上進行繞線。 應該注意的是,在功率調整元件11 〇 〇電路丨丨2能夠不產 生損害地進行微通道處理的那些情況下,電路丨丨2亦可以在 微通道結構的製作前加以製作。如此,這些介面、功率、地 點穿孔便可以在微通道結構的形成前或形成後加以製作。連 接這些穿孔的焊墊(若有)係可以在功率調整及熱能管理模 組1 0 0 0的其他元件完成後加以製作。 在第1 9 A圖的實施例中,功率調整元件丨i 〇 〇及熱能管理 元件1200的微通道結構乃是製作於一個基底中。在另一個實 %例中,整個微通道結構(或這個結構的部分)可以製作於 裝置200的背側。請參考第19B及19C圖,微通道結構的微通 道1 220可以完整地製作於裝置2〇〇中(第19B圖)、或部分地 製作於裝置200及功率調整元件"00中(第19c圖)。另外, 第19A圖的相關討論亦可以完整及等同地適用於第19B及igcPage 49 200302960 V. Description of the invention (43) It is also possible to have a tube and a plurality of independent micro-channels, so as to achieve independent thermal energy capture and removal of the designated area of the device 200 and / or the power adjustment element 1 1 00. In addition, the power adjustment and thermal management module in Figure 18A can also be implemented as the packaging architecture in Figures 11, 12A, and 12B. In fact, the power adjustment and thermal energy management modules shown in Figures 8 to 18, as described earlier, all the features and attributes of ° will also be equally applicable to the power adjustment and thermal energy management modules in Figure 9A. group. Please continue to refer to Figure 19A. The power adjustment and thermal management module 1000 can use any of the winding technologies described previously to perform signal winding on the device 2000. In addition, the power and location can also be wound on the circuit 112 and the device 200 using the same technology (including the technology shown in Figure 6 and previously described). It should be noted that, in those cases where the power adjustment element 1 100 circuit 2 can be micro-channel processed without causing damage, the circuit 2 2 can also be fabricated before the fabrication of the micro-channel structure. In this way, these interfaces, power and ground perforations can be made before or after the microchannel structure is formed. The pads (if any) connected to these perforations can be made after the other components of the power adjustment and thermal management module 1 00 0 are completed. In the embodiment of FIG. 19A, the micro-channel structure of the power adjustment element 丨 i00 and the thermal energy management element 1200 is fabricated in a substrate. In another example, the entire microchannel structure (or part of this structure) can be fabricated on the back side of the device 200. Please refer to Figures 19B and 19C. The microchannel 1 220 of the microchannel structure can be completely manufactured in the device 2000 (Figure 19B), or partially manufactured in the device 200 and the power adjustment element " 00 (Figure 19c Figure). In addition, the discussions in Figure 19A can also be applied to Figures 19B and igc completely and equally.
第50頁 200302960Page 50 200302960
圖所述的功率調整及熱能管理模組。為簡便起見,這些討論 將不再加以重覆。 本發明的另一個特徵乃是利用這個模組及^/或先前所述 兀件(舉例來說,功率調整元件丨丨〇 〇、熱能捕捉及拒絕模組 1 40 0、熱能拒絕元件1410、及熱能捕捉元件142〇 )做為系統 的設計方塊,其具有區域性的功率調整功能及熱能捕捉、移 除及/或拒絕能力。舉例來說,請參考第2 〇圖,在一個實施 例中’裝置20 0係置於印刷電路板4 〇〇上,且熱能捕捉元件 1420係置於裝置200表面,藉以促進裝置2〇〇所生區域熱能的 捕捉。這個功率調整及熱能管、理模組〗〇 〇 〇係置於熱能捕捉元 人牛1 4 2 0表面。在這個實施例中,將功率調整元件11 〇 〇設置 於熱能捕捉元件1 420及熱能管理元件丨2〇〇乃是相當有利的選 擇,其可以加強功率調整元件11 〇 〇所生熱能的捕捉。再者, 熱能拒絕元件1 41 0 (舉例來說,具有直尾翅的熱槽)亦可以 置於熱能管理元件1 2 0 0表面’藉以得到熱能管理元件1 2 〇 〇及 熱能捕捉元件1420 (主要是由裝置200產生)捕捉熱能(主 要是由功率調整元件11 0 〇產生)的加強拒絕功能。 在第2 0圖所示的實施例中,功率調整元件11 〇 〇係緊鄰於 裝置2 0 0。功率調整元件11 〇 〇上的功率及地點連接可以利用 先前所述的繞線連結架構加以完成(請參照,舉例來說,第 4及7圖)° 請繼繽參考第2 0圖’這個σ即筒(圖中未示)可以是一個 電滲性類塑的唧筒,其設置於熱能管理模組1 20 0及/或熱能 捕捉元件1420中。另外,這個唧筒並不見得要設置於熱能管The power adjustment and thermal management module described in the figure. For simplicity, these discussions will not be repeated. Another feature of the present invention is to use this module and ^ / or the previously described elements (for example, power adjustment element 丨 丨 〇〇, thermal energy capture and rejection module 1 400, thermal energy rejection element 1410, and The thermal energy capture element 142) is used as a design block of the system, which has a regional power adjustment function and thermal energy capture, removal and / or rejection capabilities. For example, please refer to FIG. 20. In one embodiment, “the device 200 is placed on the printed circuit board 400, and the thermal energy capturing element 1420 is placed on the surface of the device 200, thereby promoting the device 200 The capture of thermal energy in the area. This power adjustment and thermal energy tube and management module is placed on the surface of thermal energy capture element 142. In this embodiment, setting the power adjustment element 1100 to the thermal energy capture element 1420 and the thermal energy management element 2200 is a quite advantageous option, which can enhance the capture of the thermal energy generated by the power adjustment element 1100. In addition, the thermal energy rejection element 1 41 0 (for example, a heat tank with a straight tail fin) can also be placed on the surface of the thermal energy management element 12 0 0 to obtain the thermal energy management element 12 00 and the thermal energy capture element 1420 ( The enhanced rejection function, which is mainly generated by the device 200, captures thermal energy (mainly generated by the power adjustment element 1100). In the embodiment shown in FIG. 20, the power adjusting element 1100 is immediately adjacent to the device 2000. The power and location connection on the power adjustment element 11 〇 can be completed using the previously described winding connection structure (please refer to, for example, Figures 4 and 7) ° Please follow Bin Bin to refer to Figure 20 'This σ The cartridge (not shown) may be an electro-osmotic plastic-like cartridge, which is disposed in the thermal energy management module 1 200 and / or the thermal energy capturing element 1420. In addition, this tube is not necessarily installed in a heat pipe
第51頁 200302960 五、發明說明(45) 理模組1 200或熱能捕捉元件142〇中,而可以是一個獨立 (stand — alone )裝置。如先前所述,這個唧筒亦可以具有 複數個唧筒機構,其包括:具有以⑽乂專利申請案所述架構 的機構。 第2 1圖係表不利用模組及/或元件為設計元件的另一個 例子明參考第21圖,在這個實施例中,功率調整及敎能管 理模組1 0 0 0係置於裝置200表面,且熱能捕捉元件142〇係置 於功率凋整及熱能官理模組i 〇 〇 〇的功率調整元件1 1⑽表面 再者,熱能拒絕元件1410係置於熱能捕捉元件1 420的表面 藉以加強熱能管理元件1 20 0 (主要是由裝置20 0產生)及熱 f捕捉兀件1 420 (主要是由功率調整元件11〇〇產生 熱能的拒絕能力。 7 另外’這些功率調整及熱能管理功能亦可以加入(全部 土部分)至其他的模組或元件中,甚至是加入消耗裝置本 j二就,而言’這些功能可以與消耗裝置組合,藉以促進更 緊二成3率的系統。請參考第22圖,在本發明的這 二^中,功率調整及熱能管理模組1〇〇〇係置於袭置2〇〇中,、 :、能捕捉兀件1 420亦可以置於裝置2〇〇表自 月官理元件1 200所捕捉熱能(由裳置2〇〇及功率調整元=‘·、、 ποο產生)的拒絕能力。另外,中於熱能拒絕元件i4i〇及穿 置200的鄰近關係,熱能拒絕元件141〇亦可以直接捕捉及^ ^42Q()所生的熱能° “ ’在&能拒絕元件1410提供額 ^ ί捕捉及拒絕能力並非必需的情況下,則熱能拒絕元件 1 4 1 〇亦可以省略。 π 第52頁 200302960 五、發明說明(46) 應該注意的是,功率調整及熱能管理模組1〇〇〇亦可以置 於裝置20 0、或功率言周整元件j j 〇〇的背側及/或熱能管理元件 2 (H)亦可以同k置於裝置2 Q Q的前側及背側。再者,功率調 正凡件11 0 0亦可以置於裝置2 〇 〇的前側,且熱能管理元件 1 20 0亦可以置於裝置2〇〇的背側。 明參考第23圖’在本發明的另一個實施例中,系統20 0 0 具有置於裝置200中的功率調整模組1〇〇,且熱能捕捉及拒 組1 40 0係可以置於裝置2〇〇表面,藉以提供裝置及功率 二正元件1 1 0 〇的熱旎官理。如第2 2圖所示的實施例,第2 3圖 的功率調整模組1 00可以置於裝置2〇〇的背側或置於裝置2〇() j前側。另外,功率調整模組100亦可以同時置於裝置200的 耵側及背側。 一應該注意的是,在第20至23圖所示的全部實施例中,這 ^ π件及模組,以及具有功率調整及/或熱能管理功能/元 件的消耗裝置,亦可以具有第2至19圖所示對應元件及模组 =種種特色、屬性、替代方案、及好處,如先前所述。為簡 便起見,這些特色、屬性、及好處將不再予以重覆。Page 51 200302960 V. Description of the invention (45) The management module 1 200 or the thermal energy capturing element 1420 can be a stand-alone device. As previously mentioned, this cartridge may also have a plurality of cartridge mechanisms, including: a mechanism having the architecture described in the patent application. FIG. 21 shows another example in which a module and / or component is not used as a design element. Referring to FIG. 21, in this embodiment, the power adjustment and energy management module 1 0 0 0 is placed in the device 200. Surface, and the thermal energy capturing element 1420 is placed on the power adjustment element 11 of the power conditioning and thermal management module i 00. The surface is furthermore, the thermal energy rejection element 1410 is placed on the surface of the thermal energy capturing element 1 420 to strengthen The thermal energy management element 1 200 (mainly generated by the device 200) and the thermal f capture element 1 420 (mainly generated by the power adjustment element 1 100) to reject heat. 7 In addition, these power adjustment and thermal energy management functions are also You can add (all parts) to other modules or components, or even add consumer devices. In terms of 'these functions can be combined with consumer devices to promote a tighter 20% rate system. Please refer to FIG. 22 shows that in the two aspects of the present invention, the power adjustment and thermal energy management module 1000 is placed in the attack device 200, and the capture device 1 420 can also be placed in the device 2. 〇Table since month official management element 1 20 The rejection ability of the thermal energy captured by 0 (generated by Changzhi 200 and the power adjustment element = ',,, ποο). In addition, the thermal energy rejection element i4i〇 and the proximity relationship of the wearer 200, the thermal energy rejection element 141〇 also It can directly capture the thermal energy generated by ^ ^ 42Q () ° "'In the case where & able to reject the element 1410 to provide the amount ^‚ capture and rejection is not necessary, the thermal energy rejection element 1 4 1 〇 can also be omitted. Page 52 200302960 V. Description of the invention (46) It should be noted that the power adjustment and thermal energy management module 1000 can also be placed on the back side of the device 200, or the power conditioning element jj 〇〇 and / or The thermal energy management element 2 (H) can also be placed on the front and back side of the device 2 QQ with k. In addition, the power adjustment element 1 100 can also be placed on the front side of the device 2 0, and the thermal energy management element 1 20 0 can also be placed on the back of the device 2000. Refer to FIG. 23 for reference. In another embodiment of the present invention, the system 2 0 0 has a power adjustment module 100 placed in the device 200 and has thermal energy. The capture and rejection group 1 40 0 can be placed on the surface of the device 200, whereby Provide thermal management of the device and the power two positive components 1 100. As in the embodiment shown in FIG. 22, the power adjustment module 100 in FIG. 23 can be placed on the back side of the device 200 or It is placed on the front side of the device 20 () j. In addition, the power adjustment module 100 can also be placed on the back side and the back side of the device 200. It should be noted that in all the embodiments shown in Figures 20 to 23 ^ Π pieces and modules, as well as consumption devices with power adjustment and / or thermal energy management functions / components, can also have corresponding components and modules shown in Figures 2 to 19 = various features, attributes, alternatives, and Benefits, as previously described. For simplicity, these features, attributes, and benefits will not be repeated.
另外,在熱能拒絕元件1 4 1 〇提供熱能捕捉及拒絕能力並 非必要的情況下,熱能拒絕元件丨4丨〇亦可加以省略。 W 本發明的另一個特徵乃是一種具有複數個消耗裝置的系統, 其中,各個消耗裝置分別具有一個功率調整及熱能管理模 、、且,用以接收主要功率供應的功率及流體唧筒機構的動作漭 ,。請參考第24圖,在這個實施例中,主要功率供應31〇〇 = 是用來提供外部功率來源(圖中未示)的啟始功率調整。主 第53頁 200302960 五、發明說明(47) 要功率供應3 1 0 0的輸出乃是用來分別提供給功率調整及熱能 管理模組1000a至1000c的各個功率調整元件ll〇〇a至iiooc。 這些功率調整元件1 l〇〇a至1100c乃是用來分別提供消耗裝置 200a至200c的區域性功率調整。這些功率調整元件1丨〇〇a至 11 0 0 c可以是第8至1 9圖所示及先前所述實施例的任何一種。 這個主要功率供應31 00乃是利用功率匯流排311〇,藉以 提供啟始調整功率給各個功率調整元件丨1 〇 〇 a至11 0 0 c。這個 功率匯流排311 0可以並聯繞線至各個熱能管理元件丨2〇〇a至 1200c 。 這個主要功率供應3 100可以具有分離的元成(類似於第 1圖所示)、或可以是一個功率調整模組丨1 〇 〇 (如第2圖所示 )。另外,主要功率供應3 1 0 0亦可以具有額外的功率供應電 路’其分別放置於裝置200a至200c的鄰近區域。這些額外的 功率供應電路可以在供應功率調整元件1100a至iiooc前,用 來提供額外的啟始功率調整。 請繼續參考第2 4圖,流體唧筒機構3 2 〇 〇可以分別提供動 作流體至各個功率調整及熱能管理模組丨0 〇 〇 a至1 〇 〇 〇 c的熱能 管理元件1200a至1200c。這些熱能管理元件i2〇〇a至1200c可 以捕捉及移除裝置200a至200c及/或功率調整元件ii〇Qa至 1100c所生的熱能。這些熱能管理元件12〇〇a至12〇〇(:可以是 先前所述或第8至1 9圖所示的任何一個實施例。另外,第2 4 圖的系統3 0 0 0亦可以具有區域的熱能拒絕元件(圖中未示 )’其係置於裝置200a至200c表面或附近。另外,系統3〇〇〇 亦可以、或選擇性地具有一個全域熱能拒絕元件(圖中未示In addition, in the case where the thermal energy rejection element 141 is not necessary to provide the thermal energy capture and rejection capability, the thermal energy rejection element 415 can also be omitted. W Another feature of the present invention is a system with a plurality of consumption devices, wherein each consumption device has a power adjustment and thermal energy management module, and is used to receive the power of the main power supply and the action of the fluid cartridge mechanism. expansive,. Please refer to FIG. 24. In this embodiment, the main power supply 3100 = is used to provide an initial power adjustment for an external power source (not shown). Main page 53 200302960 V. Description of the invention (47) The output of the power supply 3 1 0 0 is used to provide the power adjustment elements 1000a to 1000c of the power adjustment elements 1000a to 1000c respectively. These power adjustment elements 110a to 1100c are used to provide regional power adjustments of the consuming devices 200a to 200c, respectively. These power adjusting elements 110a to 110c can be any one of the embodiments shown in Figs. 8 to 19 and described previously. This main power supply 31 00 utilizes the power bus 3110 to provide the initial adjustment power to each power adjustment element 1 100a to 1100c. This power bus 3110 can be wound in parallel to each thermal energy management element 200a to 1200c. This main power supply 3 100 may have a separate element (similar to that shown in Fig. 1), or it may be a power adjustment module 1 100 (as shown in Fig. 2). In addition, the main power supply 3 1 0 may also have an additional power supply circuit 'which is placed in the vicinity of the devices 200a to 200c, respectively. These additional power supply circuits can be used to provide additional start-up power adjustments before power adjustment elements 1100a to iiooc are supplied. Please continue to refer to FIG. 24. The fluid cartridge mechanism 3 2 00 can provide working fluid to each of the power adjustment and thermal energy management modules 丨 0 〇 a to 100 〇 c thermal energy management elements 1200a to 1200c. These thermal energy management elements i200a to 1200c can capture and remove the thermal energy generated by the devices 200a to 200c and / or the power adjustment elements iiQa to 1100c. These thermal energy management elements 1200a to 1200 (: may be any of the embodiments described previously or shown in Figs. 8 to 19. In addition, the system 3 0 0 in Fig. 24 may also have zones The thermal energy rejection element (not shown) is placed on or near the surface of the devices 200a to 200c. In addition, the system 3000 can also or optionally have a global thermal rejection element (not shown)
第54頁 200302960 五、發明說明(48) ),用以拒絕一個或更多個熱能管理元件1 20 0a至1 2 0 0c的熱 能。另外,這些熱能拒絕元件亦可以具有第2至1 9圖所示及 先前所述熱能拒絕元件及熱能拒絕模組的全部特色。 這個流體唧筒機構乃是利用流體匯流排3 2 1 0,用來交換 動作流體及各個熱能管理元件1 2 0 〇 a至1 2 0 0 c。亦即,π即筒機 構3 2 0 0乃是利用流體匯流排3 2 1 0,提供冷卻流體至各個熱能 管理元件1 200a至1 20 0c ;且流體匯流排321〇乃是用來提供熱 能管理元件1 2 0 0 a至1 2 0 0 c的加熱流體的路徑給流體唧筒機構 3 2 0 0。這個流體匯流排3 2 1 0亦可以並聯或串聯地繞線至各個 熱能管理元件1 200a至1 200c。 應該 不及先前 下,這些 括先前所 用的熱能 3 2 1 0便可 本發 解,然而 藝者亦可 發明的範 舉例來說 具有功率 設計方塊 見,且因 注意的是,第 所述的功率調 熱能管理操作 述及第2至7、 管理技術類型 不再必要。 明的各種實施 ,在不違背本 能對本發明進 圍當以申請專 ’這些模組及 調整特色及熱 手段得到的模 此,應該落在 24圖的系統3〇〇〇可以利 整拉組1 0 〇加以實施例<: 或功能便可以利用各種 20及21圖所示的方法。 ’流體唧筒機構320 0及 例已說明如上。熟習此 發明範圍及精神的情況 行各種變動、調整及變 利範圍為準,必要時亦 元件組合的其他變更可 能管理特色的系統。就 組及元件的其他組合亦 本發明的範圍内。 方法執行,包 如此,因應利 流體匯流排 技藝者當瞭 下,熟習此技 更。因此,本 可參酌前述。 能是提供一個 此而言,利用 應該可以預Page 54 200302960 V. Description of the Invention (48)) is used to reject the thermal energy of one or more thermal energy management elements 1 20 0a to 1 2 0 0c. In addition, these heat rejection elements can also have all the features of the heat rejection elements and heat rejection modules shown in Figures 2 to 19 and previously described. This fluid pumping mechanism uses a fluid bus 3 2 10 to exchange working fluid and various thermal energy management elements 12 20 a to 12 0 c. That is, π means the barrel mechanism 3 2 0 is to provide cooling fluid to each thermal energy management element 1 200a to 1 200 0c by using the fluid bus 3 2 10; and the fluid bus 3210 is used to provide thermal energy management The path of the heated fluid from elements 1 2 0 0 a to 1 2 0 0 c gives the fluid cartridge mechanism 3 2 0 0. This fluid bus 3 2 1 0 can also be wound in parallel or in series to the respective thermal energy management elements 1 200a to 1 200c. It should be better than the previous ones. These include the previously used thermal energy 3 2 10, which can be solved, but the artist can also invent the example of a power design block. See also, because it is noted that the power adjustment Thermal energy management operations mentioned in Sections 2 to 7. Management technology types are no longer necessary. The various implementations of the Ming Dynasty will not violate the instincts of the present invention and apply for these modules and adjust the characteristics and models obtained by thermal means. The system that should fall on Figure 24 can be used to rectify the group 1 0 〇Exemplary embodiments <: Various methods shown in Figs. 20 and 21 can be used for functions. The 'fluid pump mechanism 3200' and the examples have been described above. Familiarize yourself with the scope and spirit of the invention. Various changes, adjustments, and scope of changes shall prevail, and other changes in the combination of components may manage the unique system if necessary. Groups and other combinations of elements are also within the scope of the invention. The method is implemented, including this. In response to the benefits of the fluid bussiness artist, he is familiar with this technique. Therefore, one could take the above into account. Can be provided in this regard, the use should be predictable
第55頁 200302960 五、發明說明(49) ' 〜^ _— 另外,這些:功率調整及熱能管理 裝置(包括第22及23圖所示u志此 < 苛色亦可以組合於這個 模組、元件、或裝置中。的其他 工:落在本發”範圍= ==: ^ ,微通道熱旎父換器、微通道、感應器、及唧筒機 、許^不同類型排列、佈局、架構、設計、及技術,亦應 二Γ以提供進一步的參考。事實上,Kenny專利申請案全文 均應做為本案的參考。 、Page 55, 200302960 V. Description of the invention (49) '~ ^ _ — In addition, these: power adjustment and thermal energy management devices (including the pictures shown in Figures 22 and 23). ≪ harsh colors can also be combined in this module, Components or devices. Other work: falling within the scope of the present invention = ===: ^, micro-channel heat exchangers, micro-channels, sensors, and tube machines, different types of arrangements, layouts, architectures, Design and technology should also be used to provide further reference. In fact, the entire Kenny patent application should be used as a reference for this case.
第56頁 200302960 圖式簡單說明 ί 種積體電路裝置(舉例來說,微處理哭)的* 调正及熱捕捉/拒絕的傳統手段的方塊圖。时)的功率 m根據本發明的一個特徵、一種分 的剖面圖。 、刀千凋整模組 第3圖係加入至一個積體電路應用裝置中、第2 組的一個實施例的方塊圖。 回力率凋整模 第4圖係加入至一個積體電路應用裝置中、根摅 率調整及熱捕捉/拒絕模組的另一個實施例的方换m明的功 第5圖係根據本發明的一個特徵 分 方塊圖敕 ★(包括功率及接地導管)的剖面圖。刀離式功率調整模組 第6圖係根據本發明的一個特徵、這個功率 俯視圖的方塊圖。 JE'拉、、且介面的 第7圖係加入至一個積體電路應用裝置中、根 Λ功Λ調整*熱能管理模組的方塊圖。 個 面據圖本發明的- 第9圖係加人至_個積體電路應用裝置中 熱能管理模組的方塊圖。 圖功率调整及 第m圖係根據本發明的—個特徵、 個微通道架構的俯視圖。 ”、、此&理7L件的一 第10Β圖係第10Α圖所示的一個埶 架構沿著ΑΑ切線的剖面圖。”、、&里兀件中、這個微通道 第11圖係加入至一個雙線(dual _in — Ηη 方(face — down )積體雷路廍用获罢 匕裝、面向下 積體電路應用裝置中另一個實施例的方塊 第57頁 200302960 圖式簡單說明 圖。 第12〜圖係加入至-個雙線(dual — in - line )包裝、面向 ee〜down)積體電路應用裝置中另一個實施例的方 ^^ ^ 2A ® ^ ^ ^ ^ 路應用裝置中實施例二^ :面向上方(faCe~d〇Wn)積體電 — 二1 Τ^例的方塊圖。 =1 3 ::系根據本發明、這個功率調整 第1 4 H #妒i +板)的另一個實施例的剖面圖。 個與浐俐2 本發明、這個功率調整及熱能管理模έ且的另 個貫施例的剖面圖。 保、、且的另一 第1 5圖係加入至_細 及熱能管理模電路應用裝置中、第12圖功率調整 第貫施例的方塊圖。 弟1 6圖係根據本發 個實施例的剖面圖。、個力羊凋整及熱能官理模組的另_ 第1 7Α圖係加入至一個積體電路應 式熱捕捉/拒絕模組施^ 、置中、格配一個分離 第17Β圖係加入至—個/鈿例的方塊圖及剖面圖。 式熱捕捉凡件一個實施 ,置中格配一個分離 第㈣係根據本發明的另一個方:圖及剖面圖。 理模組的剖面圖。 做、一個功率調整及熱能管 第19A、19B及19C圖係加入至一 、才、路功率調整及熱能管理Page 56 200302960 Schematic description ί A block diagram of the traditional means of adjustment and thermal capture / rejection of integrated circuit devices (for example, microprocessing). The power m) is a sectional view according to a feature of the present invention. 3, Figure 3 is a block diagram of an embodiment of the second group added to an integrated circuit application device. Figure 4 of the pullback rate shaping mode is added to an integrated circuit application device, and the root-cut rate adjustment and thermal capture / rejection module of another embodiment of the square-meter-square function are shown in Figure 5 according to the present invention. A characteristic block diagram 敕 ★ (including power and ground ducts) section. Knife-off power adjustment module Fig. 6 is a block diagram of a top view of this power according to a feature of the present invention. Figure 7 of the JE 'pull, and interface is a block diagram of the Λ work Λ adjustment * thermal energy management module added to an integrated circuit application device. According to the figures of the present invention-Figure 9 is a block diagram of a thermal energy management module added to an integrated circuit application device. The graph power adjustment and the m-th graph are top views of a feature and a microchannel architecture according to the present invention. "、 A &10; a 10B drawing of this & 7L piece is a cross-sectional view of a 埶 frame shown in Fig. 10A along the AA tangent line.", &Amp; inside, the 11th drawing of this microchannel is added To a dual line (dual _in — Ηη square (face — down) integrated circuit of the integrated circuit, which is equipped with a striker and facing downward, is a block diagram of another embodiment of the integrated circuit application device on page 57. Figures 12 ~ 12 are added to a dual-in-line package, ee ~ down) integrated circuit application device of another embodiment. ^^ ^ 2A ® ^ ^ ^ ^ Road application device Embodiment 2 ^: A block diagram of an example of a top-facing (faCe ~ d0Wn) integrated capacitor—two 1T ^. = 1 3 :: is a sectional view of another embodiment of this power adjustment according to the present invention. This is a cross-sectional view of another embodiment of the present invention, this power adjustment and thermal energy management module. Another 15th figure is a block diagram of the embodiment of the power adjustment of the twelfth figure, which is added to the application device of the thermal management mode circuit, and the twelfth figure. Figure 16 is a cross-sectional view according to an embodiment of the present invention. 、 The other one of the Sheep Shearing and Thermal Energy Management Module_ Figure 1 7A is added to an integrated circuit application-type thermal capture / rejection module. ^, Centered, and a separate module is added. Figure 17B is added to —Block diagram and section view of each case. An implementation of each type of thermal capture, centering with a separation The third line is according to the other aspect of the present invention: a diagram and a sectional view. Sectional view of the management module. Do, a power adjustment and thermal energy tube Figures 19A, 19B and 19C are added to the first, power, and power management and thermal energy management
第58頁 個功率調整及熱能管理個積體電路應用裝置中、 ㈣圖係根據本發明、===圖。 、Page 58 In the integrated circuit application device for power adjustment and thermal energy management, the diagram is a diagram according to the present invention. ,
統的一個實施例的方塊 _ 第21圖係根據本發明、這個 統的另一個實施例的 閉迴路功率調整及熱能管 第22圖係根據本發明、塊圖。 糸Block diagram of one embodiment of the system _ Figure 21 is a block diagram of the closed loop power adjustment and thermal energy tube according to the present invention, another embodiment of the system. Figure 22 is a block diagram according to the present invention. Ito
統的另一個實施例的方了閉迴路功率調整及熱能管理 第2 3圖係根據本發明、^ I 方塊圖。 現口功率調整系統的另一個實施例的 第24圖係根據本發明的另一 及熱能管理系統(包括 固特徵、一個封閉迴路功率調整 ;、及熱匯流排)的方塊圖。 元件符號說明 1 旁路電容器 2 直尾翅 4 熱能散佈裝置 6 裝置 !〇 J 3000 系統 1〇2,l〇2a,l〇2b 基底 I 06a--l 〇6p介面焊墊 l〇8a,ll〇a,n4a 功率 II 〇 b 接地焊墊 11 4 b 接地導管 及接地導管 11 8 b輸出接地穿孔 1 2 2 連結焊塾 3 電壓整流體 5 電性連接 7 印刷繞線基底 1 0 0功率調整模組 104a--104h介面穿孔 106x,106y,106z 預定焊塾 108b接地穿孔 11 2電路 116a,116b ’ 116c 輪出功率 118a輸出功率穿孔 1 2 0 習知繞線Another embodiment of the system is closed-loop power adjustment and thermal energy management. Figures 23 and 3 are block diagrams according to the present invention. Figure 24 of another embodiment of the present power adjustment system is a block diagram of another and thermal energy management system (including solid features, a closed loop power adjustment; and thermal busbars) according to the present invention. Description of component symbols 1 Bypass capacitor 2 Straight tail fin 4 Thermal energy dispersing device 6 Device! 0J 3000 System 1 02, 102a, 102b Substrate I 06a--106p pads 08a, 111 a, n4a Power II 〇b Ground pad 11 4 b Grounding conduit and grounding conduit 11 8 b Output ground perforation 1 2 2 Connection welding pad 3 Voltage rectifier 5 Electrical connection 7 Printed winding base 1 0 0 Power adjustment module 104a--104h interface perforations 106x, 106y, 106z scheduled solder holes 108b ground perforation 11 2 circuits 116a, 116b '116c output power 118a output power perforation 1 2 0 conventional winding
200302960 圖式簡單說明 200 ’200a--200c 裝置 400 電路板 300 ’1000 ’1000a--1000c 熱能管理模組 1100功率調整元件 1260管道 1200 ’1200a--1200c熱能管理元件 1 280控制器 1 30 0包裝 1210,1 430微通道熱能交換器 1220,1220—1,1220—2 ,1440 微通道 1230唧筒 1 24 0流體入口 1250流體出口 1320遮蓋 1 2 70,1 290感應器 1410熱能拒絕元件 1 40 0熱能捕捉及拒絕模組 1 42 0熱能捕捉元件 3 1 0 0主要功率供應 3 11 0功率匯流排 3 2 0 0流體唧筒機構 3 2 1 0流體匯流排200302960 Simple illustration 200'200a--200c device 400 circuit board 300'1000'1000a--1000c thermal energy management module 1100 power adjustment element 1260 pipeline 1200 '1200a--1200c thermal energy management element 1 280 controller 1 30 0 packaging 1210, 1 430 microchannel thermal energy exchanger 1220, 1220-1, 1220-2, 1440 microchannel 1230 cylinder 1 24 0 fluid inlet 1250 fluid outlet 1320 cover 1 2 70, 1 290 sensor 1410 thermal energy rejection element 1 40 0 thermal energy Capturing and rejecting module 1 42 0 Thermal energy capturing element 3 1 0 0 Main power supply 3 11 0 Power bus 3 2 0 0 Fluid pump mechanism 3 2 1 0 Fluid bus
第60頁Page 60
Claims (1)
Applications Claiming Priority (2)
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US10/072,137 US6606251B1 (en) | 2002-02-07 | 2002-02-07 | Power conditioning module |
US10/114,005 US6678168B2 (en) | 2002-02-07 | 2002-03-27 | System including power conditioning modules |
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TWI239438B TWI239438B (en) | 2005-09-11 |
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TW (1) | TWI239438B (en) |
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US9451112B2 (en) | 2011-05-04 | 2016-09-20 | Samsung Electronics Co., Ltd. | Image forming apparatus and method for controlling the same |
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JP3477781B2 (en) * | 1993-03-23 | 2003-12-10 | セイコーエプソン株式会社 | IC card |
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- 2003-01-31 AU AU2003217286A patent/AU2003217286A1/en not_active Abandoned
- 2003-01-31 AU AU2003217287A patent/AU2003217287A1/en not_active Abandoned
- 2003-01-31 WO PCT/US2003/002868 patent/WO2003067730A2/en not_active Application Discontinuation
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US9451112B2 (en) | 2011-05-04 | 2016-09-20 | Samsung Electronics Co., Ltd. | Image forming apparatus and method for controlling the same |
TWI558161B (en) * | 2011-05-04 | 2016-11-11 | 三星電子股份有限公司 | Image forming apparatus and method for controlling the same |
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AU2003217287A8 (en) | 2003-09-02 |
AU2003217286A1 (en) | 2003-09-02 |
WO2003067730A3 (en) | 2004-01-29 |
TWI239438B (en) | 2005-09-11 |
AU2003217287A1 (en) | 2003-09-02 |
WO2003067730A2 (en) | 2003-08-14 |
WO2003067630A2 (en) | 2003-08-14 |
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WO2003067630A3 (en) | 2003-12-31 |
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