SU773063A1 - Solution for removing tin-lead plating from copper base - Google Patents
Solution for removing tin-lead plating from copper base Download PDFInfo
- Publication number
- SU773063A1 SU773063A1 SU792725239A SU2725239A SU773063A1 SU 773063 A1 SU773063 A1 SU 773063A1 SU 792725239 A SU792725239 A SU 792725239A SU 2725239 A SU2725239 A SU 2725239A SU 773063 A1 SU773063 A1 SU 773063A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- copper
- solution
- nitric acid
- polyethylene glycol
- acid
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
1one
Изобретение относитс к техноло-. гии химической обработки металлов и предназначено дл использовани в гальванотехнике и производстве печатных плат.5FIELD: technology. chemical processing of metals and is intended for use in electroplating and the production of printed circuit boards.
Известен раствор дл сн ти опов нно-свинцовых покрытий, содержагдий борфтористоводородную кислоту и перекись водорода 1.A known solution for removing lead-bearing coatings containing hydrofluoric acid and hydrogen peroxide 1.
Этот раствор позвол ет удал ть Ю олов нно-свинцовые покрыти с большой скоростью (3-6 мкм/мин), однако, вызывает интенсивное растравливание поверхности основы и образование пленки шлама.15This solution allows you to remove 10 Å lead-lead coatings at high speed (3-6 µm / min), however, causes intense etching of the substrate surface and the formation of a sludge film.
Наиболее близким к пре.цлагаемому вл етс раствор дл сн ти олов нно-свинцовых покрытий, содержащий борфтористоводо рдную кислоту, борфтористую медь в количестве 2-50 г/л 20 ( в пересчете на металл), борфтористое железо и воду (2,The closest to the above is a solution for removing tin-lead coatings containing bortochloric acid, copper boron fluoride in an amount of 2-50 g / l 20 (in terms of metal), ferrofluoric iron and water (2,
Этот раствор также вызывает растравливание поверхности основы.This solution also causes etching of the substrate surface.
Цель изобретени - предотвращение 25 растравливани поверхности основы.The purpose of the invention is to prevent 25 etching of the substrate surface.
Поставленна цель достигаетс тем, что в раствор, содержащий кислоту , борфтористую медь и воду, ввод т . в качестве кислоты азотную кислоту, 30This goal is achieved in that a solution containing acid, copper boron and water is added. as acid nitric acid, 30
22
а также неионогенное моющее вещество при следующем соотношении компонентов , г/л:as well as non-ionic detergent in the following ratio of components, g / l:
Азотна кислота 350-450Nitric acid 350-450
Борфториста медьBoron fluoride copper
в пересчете наin terms of
металл0,5-1,0metal0,5-1,0
Неионогенное моющееNon-ionic detergent
вещество1-10substance1-10
ВодаДо 1 лWater up to 1 l
при этом в качестве неионогенного чюющего вещества раствор содержит толиэтиленгликолевые эфиры высших жирных спиртов и полиэтиленгликолевые эфиры алкилфенолов.while as a non-ionic substance, the solution contains polyethylene glycol ethers of higher fatty alcohols and polyethylene glycol ethers of alkylphenols.
Содержаща с в растворе азотна кислота обеспечивает высокую скорость сн ти покрыти (2,5-5 мкм/мин), так как вл етс сильным окислителем и образует со свинцом и оловом растворимые соединени . Содержание кислоты свыше 450 г/л вызывает растравливание основы, ниже 350 г/л уменьшает скорость удалени покрыти . Борфториста медь выполн ет дво кую функцию. Ионы меди ускор ют растворение олов нно-свинцового покрыти за счет контактного выделени меди на нем. Однако, содержание меди свыше 1 г/л можртThe nitric acid contained in the solution provides a high removal rate of the coating (2.5-5 µm / min), as it is a strong oxidizing agent and forms soluble compounds with lead and tin. Acid content above 450 g / l causes etching of the base; below 350 g / l reduces the rate of removal of the coating. The boron fluoride performs a double function. Copper ions accelerate the dissolution of the tin-lead coating due to the contact release of copper on it. However, the copper content is above 1 g / l.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU792725239A SU773063A1 (en) | 1979-02-15 | 1979-02-15 | Solution for removing tin-lead plating from copper base |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU792725239A SU773063A1 (en) | 1979-02-15 | 1979-02-15 | Solution for removing tin-lead plating from copper base |
Publications (1)
Publication Number | Publication Date |
---|---|
SU773063A1 true SU773063A1 (en) | 1980-10-23 |
Family
ID=20810449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU792725239A SU773063A1 (en) | 1979-02-15 | 1979-02-15 | Solution for removing tin-lead plating from copper base |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU773063A1 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0119262A1 (en) * | 1982-09-20 | 1984-09-26 | Circuit Chemistry Corp | Solder stripping solution. |
US4761245A (en) * | 1987-01-27 | 1988-08-02 | Olin Corporation | Etching solutions containing ammonium fluoride and an alkylphenol polyglycidol ether surfactant |
US4863563A (en) * | 1987-01-27 | 1989-09-05 | Olin Corporation | Etching solutions containing ammonium fluoride and a nonionic alkyl amine glycidol adduct and method of etching |
US4871422A (en) * | 1987-01-27 | 1989-10-03 | Olin Corporation | Etching solutions containing ammonium fluoride and anionic sulfate esters of alkylphenol polyglycidol ethers and method of etching |
WO1989011517A1 (en) * | 1988-05-16 | 1989-11-30 | Olin Corporation | Etching solutions containing anionic sulfate esters of alkylphenol polyglycidol ethers |
RU2470093C1 (en) * | 2011-06-16 | 2012-12-20 | Федеральное государственное образовательное учреждение высшего профессионального образования "Государственный университет-учебно-научно-производственный комплекс" (ФГОУ ВПО "Госуниверситет-УНПК") | Selective etchant for removal of tin-and-leaden coatings from copper base |
RU2580770C2 (en) * | 2014-09-03 | 2016-04-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Государственный университет -учебно-научно-производственный комплекс" (ФГБОУ ВПО "Госуниверситет-УНПК") | Selective gel for removal of tin-lead coatings from copper substrate |
-
1979
- 1979-02-15 SU SU792725239A patent/SU773063A1/en active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0119262A1 (en) * | 1982-09-20 | 1984-09-26 | Circuit Chemistry Corp | Solder stripping solution. |
US4761245A (en) * | 1987-01-27 | 1988-08-02 | Olin Corporation | Etching solutions containing ammonium fluoride and an alkylphenol polyglycidol ether surfactant |
US4863563A (en) * | 1987-01-27 | 1989-09-05 | Olin Corporation | Etching solutions containing ammonium fluoride and a nonionic alkyl amine glycidol adduct and method of etching |
US4871422A (en) * | 1987-01-27 | 1989-10-03 | Olin Corporation | Etching solutions containing ammonium fluoride and anionic sulfate esters of alkylphenol polyglycidol ethers and method of etching |
WO1989011517A1 (en) * | 1988-05-16 | 1989-11-30 | Olin Corporation | Etching solutions containing anionic sulfate esters of alkylphenol polyglycidol ethers |
RU2470093C1 (en) * | 2011-06-16 | 2012-12-20 | Федеральное государственное образовательное учреждение высшего профессионального образования "Государственный университет-учебно-научно-производственный комплекс" (ФГОУ ВПО "Госуниверситет-УНПК") | Selective etchant for removal of tin-and-leaden coatings from copper base |
RU2580770C2 (en) * | 2014-09-03 | 2016-04-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Государственный университет -учебно-научно-производственный комплекс" (ФГБОУ ВПО "Госуниверситет-УНПК") | Selective gel for removal of tin-lead coatings from copper substrate |
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