SU548312A1 - Method of growing activated monocrystals - Google Patents
Method of growing activated monocrystalsInfo
- Publication number
- SU548312A1 SU548312A1 SU2097971A SU2097971A SU548312A1 SU 548312 A1 SU548312 A1 SU 548312A1 SU 2097971 A SU2097971 A SU 2097971A SU 2097971 A SU2097971 A SU 2097971A SU 548312 A1 SU548312 A1 SU 548312A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- melt
- growing
- monocrystals
- source material
- crystal
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 7
- 239000013078 crystal Substances 0.000 claims description 10
- 239000000155 melt Substances 0.000 claims description 10
- 238000002425 crystallisation Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 4
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
но 1,35. Столб расплава непрерывно увеличивают в течение всего процесса разраш,ивани непрерывной подпиткой расплава исходным сырьем, отношение площадей расплава и фронта кристаллизации поддерживают посто нным . При выт гивании кристалла со скоростью 4 мм/час уровень расплава понижаетс на 0,005 мм (чувствительность датчика) за 8 сек. Следовательно, точность измерени скорости роста кристалла и соответственно чувствительность управлени ею по изменению уровн расплава увеличиваетс по сравнению с прототипом в 90 раз.but 1.35. The melt column is continuously increased throughout the entire process, expanded by continuously feeding the melt with the raw material, the ratio of the melt areas and the crystallization front is kept constant. When the crystal is pulled out at a speed of 4 mm / hour, the melt level decreases by 0.005 mm (sensor sensitivity) in 8 seconds. Therefore, the accuracy of measuring the crystal growth rate and, accordingly, the sensitivity of controlling it by changing the level of the melt is increased by 90 times compared with the prototype.
Небольшой начальный объем расплава (9 мл), из которого выраш;ивают кристаллы, позвол ет добитьс равномерного распределени примесей по всему объему кристалла. Кроме того, выт гивание кристалла из небольшого объема расплава имеет преимущество в том, что позвол ет исключить большую инерционность при корректировке температуры расплава.A small initial volume of the melt (9 ml), from which crystals grow, makes it possible to achieve a uniform distribution of impurities throughout the volume of the crystal. In addition, pulling a crystal from a small volume of the melt has the advantage of eliminating large inertia when adjusting the temperature of the melt.
Чувствительность управлени разращиванием кристалла по диаметру (скорость роста ) в предлагаемом способе значительно увеличиваетс и остаетс стабильной на прот л ении всего выращивани . Это уменьи1ает веро тность зарождени блоков. Растущий кристалл на прот жении всего процесса выращивани практически закрывает зеркало расплава и рост по диаметру идет в зоне максимального градиента температуры (вблизи стенок тигл ). По вление «льдинок в процессе выращивани исключено, что также приводит к уменьшению блочности кристалла.The sensitivity of crystal growth control by diameter (growth rate) in the proposed method increases significantly and remains stable throughout the entire growth. This reduces the likelihood of block formation. A growing crystal during the whole growing process practically closes the melt mirror and its diameter increases in the zone of maximum temperature gradient (near the walls of the crucibles). The appearance of ice in the process of growing is excluded, which also leads to a decrease in the blockiness of the crystal.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU2097971A SU548312A1 (en) | 1975-01-17 | 1975-01-17 | Method of growing activated monocrystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU2097971A SU548312A1 (en) | 1975-01-17 | 1975-01-17 | Method of growing activated monocrystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU548312A1 true SU548312A1 (en) | 1977-02-28 |
Family
ID=20607831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU2097971A SU548312A1 (en) | 1975-01-17 | 1975-01-17 | Method of growing activated monocrystals |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU548312A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5178719A (en) * | 1991-08-20 | 1993-01-12 | Horiba Instruments, Inc. | Continuous refill crystal growth method |
-
1975
- 1975-01-17 SU SU2097971A patent/SU548312A1/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5178719A (en) * | 1991-08-20 | 1993-01-12 | Horiba Instruments, Inc. | Continuous refill crystal growth method |
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