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SU375613A1 - THE METHOD OF ENHANCEMENT AND MODULATION OF LIGHT - Google Patents

THE METHOD OF ENHANCEMENT AND MODULATION OF LIGHT

Info

Publication number
SU375613A1
SU375613A1 SU1294282A SU1294282A SU375613A1 SU 375613 A1 SU375613 A1 SU 375613A1 SU 1294282 A SU1294282 A SU 1294282A SU 1294282 A SU1294282 A SU 1294282A SU 375613 A1 SU375613 A1 SU 375613A1
Authority
SU
USSR - Soviet Union
Prior art keywords
light
modulation
enhancement
photoresistor
electrons
Prior art date
Application number
SU1294282A
Other languages
Russian (ru)
Inventor
В. Корнилов Б.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to SU1294282A priority Critical patent/SU375613A1/en
Application granted granted Critical
Publication of SU375613A1 publication Critical patent/SU375613A1/en

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  • Electroluminescent Light Sources (AREA)

Description

Изобретение относитс  к опто- и фотоэлектронике и может найти применение в различных оптоэлектронных устройствах в автоматике , вычислительной технике и других област х, где не требуетс  высокое быстродействие. Оно может быть также использовано в различных модел х биологических систем. Известны способы усилени  света и оптроны , в которых используют свойства комбинации фотопроводник - электролюминофор. В 10 качестве фотопроводников используют обычно пленки CdS, PdS и CdSe, ZnSe, ZnTl, a в качестве электролюминофоров кристаллы ZnS, активированные различными элементами , например Си, Мп и др.15 Однако при использовании этих систем электролюминофор испытывает старение кроме того, возникает необходимость использовани  сравнительно высоковольтных источников 20 питани  переменного тока (дл  «зажигани  электролюминофора требуетс  напр жение не менее 10 в). Цель изобретени  - повышение коэффици .ента усилени  и модул ции света.25 Цель достигаетс  тем, что при усилении и модул ции света по предлагаемому способу с использованием последовательно включенных источника излучени  (светового диода), фо1орезистора и батареи посто нного тока к фо- 30 истору прикладывают поле ЕС, определ из услови  Е - 1 Т У (1 + К |хс„(-1) D - коэффициент амбипол рной диффузии; YP - частота захвата дырок; |j, - подвижность носителей; а- -Р По - концентраци  электронов; РО - концентраци  дырок; Тр - времена жизни электронов и дырок соответственно, и облучают его светом посто нной интенсивности. эффициент К усилени  такой системы опл етс  соотношением К-- А -Г и - напр жение батареи. т - врем  жизни носителей, р, - подвижность носителей, I - коэффициент, учитываюш,ий долю отраженного света, Р - квантовый выход, а - длина фоторезистора.The invention relates to optoelectronics and photoelectronics, and can be used in various optoelectronic devices in automation, computing and other areas where high speed performance is not required. It can also be used in various models of biological systems. Methods for enhancing light and optocouplers are known, in which the properties of the photoconductor-electroluminor combination are used. 10 As photoconductors, CdS, PdS and CdSe, ZnSe, ZnTl films are usually used, and ZnS crystals activated by various elements, such as Cu, Mn, etc., are used as electroluminescent electrons. relatively high voltage power supply sources of alternating current (for the ignition of the electroluminescent powder a voltage of at least 10 V is required). The purpose of the invention is to increase the coefficient of amplification and modulation of light. 25 The goal is achieved by the amplification and modulation of light according to the proposed method using a series-connected radiation source (light diode), a photoresistor and a direct current battery to the photoresistor. apply an EC field, determined from the condition E - 1 T U (1 + К | xc „(- 1) D is the ambipolar diffusion coefficient; YP is the hole capture frequency; | j, is the carrier mobility; a- –P By — concentration electrons; PO — concentration of holes; Tp — lifetimes of electrons and holes with correspondingly, and irradiated with light of constant intensity. The gain K of such a system is compounded by the ratio K - A - G and is the voltage of the battery, t is the carrier lifetime, p, is the carrier mobility, I is the coefficient that accounts for reflected light, P - quantum output, and - the length of the photoresistor.

SU1294282A 1968-12-27 1968-12-27 THE METHOD OF ENHANCEMENT AND MODULATION OF LIGHT SU375613A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU1294282A SU375613A1 (en) 1968-12-27 1968-12-27 THE METHOD OF ENHANCEMENT AND MODULATION OF LIGHT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU1294282A SU375613A1 (en) 1968-12-27 1968-12-27 THE METHOD OF ENHANCEMENT AND MODULATION OF LIGHT

Publications (1)

Publication Number Publication Date
SU375613A1 true SU375613A1 (en) 1973-03-23

Family

ID=20444217

Family Applications (1)

Application Number Title Priority Date Filing Date
SU1294282A SU375613A1 (en) 1968-12-27 1968-12-27 THE METHOD OF ENHANCEMENT AND MODULATION OF LIGHT

Country Status (1)

Country Link
SU (1) SU375613A1 (en)

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