SU141521A1 - Waveguide meter of the passing pulse microwave power - Google Patents

Description

The known waveguide meters of the transmitted microwave microwave power, which use a change in the conductivity of a valence semiconductor due to a decrease in mobility, the current carriers in the electric field, are complex and inconvenient in operation.

The proposed meter contains a bar from germanium or silicon located in the waveguide, a source of flat voltage pulses, a pulsed voltmeter with a limiter and a source regulated by means of a bridge current circuit.

This allows us to significantly increase the design of the device and use it to implement the method of measuring the transmitted pulse power (onisan in ed. St. 136799).

A semiconductor sensor 1 (see block diagram), made in the form of a flat bar of germanium or silicon, is placed in waveguide 2 either through a longitudinal groove in the middle of the wall and up to contact with the bottom wall (for the case of measuring low and medium power) or wide wall in the plane of this wall. The resistance of a semiconductor is measured using flat voltage pulses produced by source 3 and arriving at the semiconductor through resistance 4. The fission of these pulses causes a pause between the measured imulses. A pulsed voltmeter 5 with a limiter from the bottom only passes impulses caused by microwave power.

In order to maintain a constant temperature of a semiconductor located in the waveguide, a direct current is passed through it, which is produced by source 6 and is controlled by a bridge circuit, one of the arms of which includes the semiconductor under investigation. Temperature control is carried out automatically.

The temperature regulator allows power measurements from liquid nitrogen temperature to 50 ° C and higher using semiconductor sensors made of silicon.