SG99827A1 - A method of manufacturing a semiconductor device - Google Patents

A method of manufacturing a semiconductor device

Info

Publication number: SG99827A1
Authority: SG; Singapore
Prior art keywords: manufacturing; semiconductor device; semiconductor
Prior art date: 1989-02-14

Application number

SG9602101A

Inventor

Hideaki Oka

Satoshi Takenaka

Masafumi Kunii

Original Assignee

Seiko Epson Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-02-14

Filing date

1990-02-12

Publication date

2003-11-27

1989-02-14 Priority claimed from JP3414089A external-priority patent/JPH02213123A/en

1989-03-27 Priority claimed from JP1074229A external-priority patent/JP2773203B2/en

1989-03-27 Priority claimed from JP7423089A external-priority patent/JPH02252246A/en

1990-02-12 Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp

2003-11-27 Publication of SG99827A1 publication Critical patent/SG99827A1/en

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP3414089A JPH02213123A (en)	1989-02-14	1989-02-14	Manufacture of semiconductor device
JP1074229A JP2773203B2 (en)	1989-03-27	1989-03-27	Method for manufacturing semiconductor device
JP7423089A JPH02252246A (en)	1989-03-27	1989-03-27	Manufacture of semiconductor device

Publications (1)

Publication Number	Publication Date
SG99827A1 true SG99827A1 (en)	2003-11-27

Family

ID=31721127

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SG9602101A SG99827A1 (en)	1989-02-14	1990-02-12	A method of manufacturing a semiconductor device

Country Status (1)

Country	Link
SG (1)	SG99827A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5879718A (en) *	1981-11-07	1983-05-13	Toshiba Corp	Manufacture of semiconductor device
US4448632A (en) *	1981-05-25	1984-05-15	Mitsubishi Denki Kabushiki Kaisha	Method of fabricating semiconductor devices
JPS6342112A (en) *	1986-08-07	1988-02-23	Sharp Corp	Method for forming polycrystalline silicon thin film

1990
- 1990-02-12 SG SG9602101A patent/SG99827A1/en unknown

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4448632A (en) *	1981-05-25	1984-05-15	Mitsubishi Denki Kabushiki Kaisha	Method of fabricating semiconductor devices
JPS5879718A (en) *	1981-11-07	1983-05-13	Toshiba Corp	Manufacture of semiconductor device
JPS6342112A (en) *	1986-08-07	1988-02-23	Sharp Corp	Method for forming polycrystalline silicon thin film

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