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SG86965A1 - Nonlinear resistance element, manufacturing fabrication method thereof, and liquid crystal display device - Google Patents

Nonlinear resistance element, manufacturing fabrication method thereof, and liquid crystal display device

Info

Publication number
SG86965A1
SG86965A1 SG9601269A SG1996001269A SG86965A1 SG 86965 A1 SG86965 A1 SG 86965A1 SG 9601269 A SG9601269 A SG 9601269A SG 1996001269 A SG1996001269 A SG 1996001269A SG 86965 A1 SG86965 A1 SG 86965A1
Authority
SG
Singapore
Prior art keywords
liquid crystal
display device
crystal display
resistance element
fabrication method
Prior art date
Application number
SG9601269A
Inventor
Kenichi Takahara
Takashi Inami
Takashi Inoue
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of SG86965A1 publication Critical patent/SG86965A1/en

Links

SG9601269A 1993-02-10 1994-02-10 Nonlinear resistance element, manufacturing fabrication method thereof, and liquid crystal display device SG86965A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2283993 1993-02-10
JP2283793 1993-02-10
JP4144993 1993-03-02

Publications (1)

Publication Number Publication Date
SG86965A1 true SG86965A1 (en) 2002-03-19

Family

ID=27283986

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9601269A SG86965A1 (en) 1993-02-10 1994-02-10 Nonlinear resistance element, manufacturing fabrication method thereof, and liquid crystal display device

Country Status (1)

Country Link
SG (1) SG86965A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0271291A2 (en) * 1986-12-08 1988-06-15 General Electric Company MIM-diode having mixed oxide insulator
JPH01300226A (en) * 1988-05-30 1989-12-04 Toshiba Corp Matrix array substrate and its manufacture
EP0430702A2 (en) * 1989-11-30 1991-06-05 Kabushiki Kaisha Toshiba Line material, electronic device using the line material and liquid crystal display

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0271291A2 (en) * 1986-12-08 1988-06-15 General Electric Company MIM-diode having mixed oxide insulator
JPH01300226A (en) * 1988-05-30 1989-12-04 Toshiba Corp Matrix array substrate and its manufacture
EP0430702A2 (en) * 1989-11-30 1991-06-05 Kabushiki Kaisha Toshiba Line material, electronic device using the line material and liquid crystal display

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