SG171692A1 - Chemical mechanical polishing composition - Google Patents
Chemical mechanical polishing compositionInfo
- Publication number
- SG171692A1 SG171692A1 SG201103505-2A SG2011035052A SG171692A1 SG 171692 A1 SG171692 A1 SG 171692A1 SG 2011035052 A SG2011035052 A SG 2011035052A SG 171692 A1 SG171692 A1 SG 171692A1
- Authority
- SG
- Singapore
- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing composition
- combinations
- inhibitor composition
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 3
- 239000000126 substance Substances 0.000 title abstract 2
- -1 imidazoline compound Chemical class 0.000 abstract 3
- 239000003112 inhibitor Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 abstract 2
- 108010077895 Sarcosine Proteins 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229940043230 sarcosine Drugs 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
An inhibitor composition according to the present invention at least comprises an imidazoline compound or a triazole compound or combinations thereof, and sarcosine and salt compounds thereof or combinations thereof. The inhibitor composition is applicable to chemical mechanical polishing so as to maintain a high removal rate of metal layers as well as suppress metal etching, thereby reducing polishing defects such as dishing, erosion and the like. Nil
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW097114974A TW200945429A (en) | 2008-04-24 | 2008-04-24 | Composition of chemical mechanical polishing |
Publications (1)
Publication Number | Publication Date |
---|---|
SG171692A1 true SG171692A1 (en) | 2011-06-29 |
Family
ID=41392753
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG201103505-2A SG171692A1 (en) | 2008-04-24 | 2008-08-05 | Chemical mechanical polishing composition |
SG200805785-3A SG156559A1 (en) | 2008-04-24 | 2008-08-05 | Chemical mechanical polishing composition |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200805785-3A SG156559A1 (en) | 2008-04-24 | 2008-08-05 | Chemical mechanical polishing composition |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5567261B2 (en) |
SG (2) | SG171692A1 (en) |
TW (1) | TW200945429A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9528030B1 (en) * | 2015-10-21 | 2016-12-27 | Cabot Microelectronics Corporation | Cobalt inhibitor combination for improved dishing |
JP6901297B2 (en) | 2017-03-22 | 2021-07-14 | 株式会社フジミインコーポレーテッド | Polishing composition |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002348562A (en) * | 2001-05-25 | 2002-12-04 | Minebea Co Ltd | Compound for coating sheet metal |
JP2004153086A (en) * | 2002-10-31 | 2004-05-27 | Showa Denko Kk | Metal abrasive compound, metal film grinding method and substrate manufacturing method |
EP1682625A1 (en) * | 2003-11-14 | 2006-07-26 | Showa Denko K.K. | Polishing composition and polishing method |
JP2005340755A (en) * | 2003-11-14 | 2005-12-08 | Showa Denko Kk | Abrasive compound and polishing method |
JP2006179845A (en) * | 2004-11-26 | 2006-07-06 | Fuji Photo Film Co Ltd | Polishing solution for metal, and polishing method |
JP2007088379A (en) * | 2005-09-26 | 2007-04-05 | Fujifilm Corp | Aqueous polishing slurry and chemical mechanical polishing method |
JP2007189148A (en) * | 2006-01-16 | 2007-07-26 | Fujifilm Corp | Chemical mechanical polishing method |
TWI437083B (en) * | 2006-07-28 | 2014-05-11 | Showa Denko Kk | Abrasive composition |
JP2007221170A (en) * | 2007-05-18 | 2007-08-30 | Hitachi Chem Co Ltd | Method of preparing polishing solution for metal |
JP2009081300A (en) * | 2007-09-26 | 2009-04-16 | Fujifilm Corp | Metal polishing composition, and polishing method using the same |
JP2009094430A (en) * | 2007-10-12 | 2009-04-30 | Adeka Corp | Polishing composition for cmp |
JP2009123880A (en) * | 2007-11-14 | 2009-06-04 | Showa Denko Kk | Polishing composition |
US7955520B2 (en) * | 2007-11-27 | 2011-06-07 | Cabot Microelectronics Corporation | Copper-passivating CMP compositions and methods |
US9202709B2 (en) * | 2008-03-19 | 2015-12-01 | Fujifilm Corporation | Polishing liquid for metal and polishing method using the same |
-
2008
- 2008-04-24 TW TW097114974A patent/TW200945429A/en unknown
- 2008-08-05 SG SG201103505-2A patent/SG171692A1/en unknown
- 2008-08-05 SG SG200805785-3A patent/SG156559A1/en unknown
- 2008-08-06 JP JP2008202884A patent/JP5567261B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
SG156559A1 (en) | 2009-11-26 |
TW200945429A (en) | 2009-11-01 |
TWI355026B (en) | 2011-12-21 |
JP2009267325A (en) | 2009-11-12 |
JP5567261B2 (en) | 2014-08-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MX370395B (en) | Flat steel product, method for producing a flat steel product, and method for producing a component. | |
MY173068A (en) | Stripping compositions having high wn/w etching selectivity | |
MX2009002220A (en) | Disinfectant systems and methods. | |
MX2011010332A (en) | Pyrimidine substituted purine compounds as kinase (s) inhibitors. | |
PH12013500365A1 (en) | Anti-infective agents and uses thereof | |
TW200639166A (en) | Amino-pyridines as inhibitors of β-secretase | |
JP2007116105A5 (en) | ||
WO2011136597A3 (en) | Copper and titanium composition for metal layer etching solution | |
MY161562A (en) | Rinse liquid for lithography and pattern formation method using the same | |
SG179158A1 (en) | Composition and method for polishing bulk silicon | |
TWI456013B (en) | Polishing slurry composition | |
MY150778A (en) | Fused heterocyclic compound | |
MY150651A (en) | Polishing composition and polishing method | |
RU2015153430A (en) | COMPOSITIONS OF CONVERSION COVERING BASED ON PERMANGANATE | |
TN2009000401A1 (en) | New methods | |
MX2012013332A (en) | Preparation of posaconazole intermediates. | |
MY158213A (en) | Cutting fluid composition for wiresawing | |
MY182270A (en) | Compositions for inhibiting corrosion | |
WO2012056390A3 (en) | Solutions and methods for metal deposition | |
SG158816A1 (en) | Process for inhibiting corrosion and removing contaminant from a surface during wafer dicing and composition useful thereof | |
MY165453A (en) | Drill having a coating | |
MX2013011333A (en) | Combinations of akt and mek inhibitor compounds, and methods of use. | |
TW200634138A (en) | Low-dishing composition and method for chemical-mechanical planarization with branched-alkylphenol-substituted benzotriazole | |
WO2015044576A3 (en) | Anti-corrosion formulations with storage stability | |
GB201105381D0 (en) | Cubic boron nitride grit and tools comprising same |