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SG11202104157QA - Precursor composition for forming metal film, metal film forming method using same, and semiconductor device comprising same metal film - Google Patents

Precursor composition for forming metal film, metal film forming method using same, and semiconductor device comprising same metal film

Info

Publication number
SG11202104157QA
SG11202104157QA SG11202104157QA SG11202104157QA SG11202104157QA SG 11202104157Q A SG11202104157Q A SG 11202104157QA SG 11202104157Q A SG11202104157Q A SG 11202104157QA SG 11202104157Q A SG11202104157Q A SG 11202104157QA SG 11202104157Q A SG11202104157Q A SG 11202104157QA
Authority
SG
Singapore
Prior art keywords
metal film
same
forming
semiconductor device
precursor composition
Prior art date
Application number
SG11202104157QA
Inventor
Chang Sung Hong
Yong Joo Park
Tae Hoon Oh
In Chun Hwang
Sang Kyung Lee
Dong Hyun Kim
Original Assignee
Sk Trichem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sk Trichem filed Critical Sk Trichem
Priority claimed from PCT/KR2019/017151 external-priority patent/WO2020122506A2/en
Publication of SG11202104157QA publication Critical patent/SG11202104157QA/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
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    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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    • C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
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    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
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    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2

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  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
SG11202104157QA 2018-12-12 2019-12-06 Precursor composition for forming metal film, metal film forming method using same, and semiconductor device comprising same metal film SG11202104157QA (en)

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KR1020190160118A KR20200072407A (en) 2018-12-12 2019-12-04 Precursor composition for film deposition, deposition method of film and semiconductor device of the same
PCT/KR2019/017151 WO2020122506A2 (en) 2018-12-12 2019-12-06 Precursor composition for forming metal film, metal film forming method using same, and semiconductor device comprising same metal film

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KR102103346B1 (en) * 2017-11-15 2020-04-22 에스케이트리켐 주식회사 Precursor Solution for Vapor Deposition and Fabrication Method of Thin Film Using the Same
JP7487119B2 (en) * 2019-02-15 2024-05-20 株式会社半導体エネルギー研究所 Method for manufacturing a semiconductor device
KR102798961B1 (en) * 2019-11-11 2025-04-25 솔브레인 주식회사 Metal precursor for forming thin film, thin film composition comprising the same and method for forming thin film thereof
US12312677B2 (en) 2020-10-16 2025-05-27 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Step coverage using an inhibitor molecule for high aspect ratio structures
KR102550599B1 (en) * 2020-11-26 2023-07-03 오션브릿지 주식회사 Metal precursor compound and deposition method for preparing film using the same
US20220205099A1 (en) * 2020-12-29 2022-06-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Group iv element containing precursors and deposition of group iv element containing films
US12291490B2 (en) * 2021-01-14 2025-05-06 Burak Karadag Method and apparatus for producing liquid nitrogen fertilizer and plasma activated water
WO2022164698A1 (en) * 2021-01-26 2022-08-04 Entegris, Inc. High throughput deposition process
KR20220157741A (en) * 2021-05-21 2022-11-29 주식회사 아이켐스 Novel hafnium compound, precursor composition comprising the same, thin film using the same and deposition method of the same
KR102679322B1 (en) * 2021-05-21 2024-06-28 에스케이트리켐 주식회사 Precursor for film deposition, deposition method of film and semiconductor device of the same
KR102712673B1 (en) * 2022-01-21 2024-10-04 티이엠씨씨엔에스 주식회사 Metal precursor compound including cyclopentadienyl ligand and deposition method for preparing film using the same
WO2023219446A1 (en) * 2022-05-13 2023-11-16 주식회사 유피케미칼 Film depositing composition including group 4 metal element-containing precursor compound and method for forming film using same

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US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
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KR20200072407A (en) 2020-06-22
CN113423862B (en) 2023-06-09
CN113423862A (en) 2021-09-21
US20210327708A1 (en) 2021-10-21
KR20210070179A (en) 2021-06-14
KR102521465B1 (en) 2023-04-12

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