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SG11202002413UA - Systems and methods for device-correlated overlay metrology - Google Patents

Systems and methods for device-correlated overlay metrology

Info

Publication number
SG11202002413UA
SG11202002413UA SG11202002413UA SG11202002413UA SG11202002413UA SG 11202002413U A SG11202002413U A SG 11202002413UA SG 11202002413U A SG11202002413U A SG 11202002413UA SG 11202002413U A SG11202002413U A SG 11202002413UA SG 11202002413U A SG11202002413U A SG 11202002413UA
Authority
SG
Singapore
Prior art keywords
systems
methods
overlay metrology
correlated overlay
correlated
Prior art date
Application number
SG11202002413UA
Inventor
Frank Laske
Ulrich Pohlmann
Stefan Eyring
Nadav Gutman
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11202002413UA publication Critical patent/SG11202002413UA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/26Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706835Metrology information management or control
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electromagnetism (AREA)
  • Polyamides (AREA)
SG11202002413UA 2017-12-07 2018-12-06 Systems and methods for device-correlated overlay metrology SG11202002413UA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762595987P 2017-12-07 2017-12-07
US16/009,939 US10474040B2 (en) 2017-12-07 2018-06-15 Systems and methods for device-correlated overlay metrology
PCT/US2018/064145 WO2019113262A1 (en) 2017-12-07 2018-12-06 Systems and methods for device-correlated overlay metrology

Publications (1)

Publication Number Publication Date
SG11202002413UA true SG11202002413UA (en) 2020-06-29

Family

ID=66696697

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202002413UA SG11202002413UA (en) 2017-12-07 2018-12-06 Systems and methods for device-correlated overlay metrology

Country Status (8)

Country Link
US (1) US10474040B2 (en)
EP (1) EP3721294B1 (en)
JP (1) JP7118152B2 (en)
KR (1) KR102435141B1 (en)
CN (1) CN111433676B (en)
SG (1) SG11202002413UA (en)
TW (1) TWI781259B (en)
WO (1) WO2019113262A1 (en)

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US10964566B2 (en) * 2018-06-29 2021-03-30 Taiwan Semiconductor Manufacturing Go., Ltd. Machine learning on overlay virtual metrology
US11073768B2 (en) 2019-06-26 2021-07-27 Kla Corporation Metrology target for scanning metrology
US11914290B2 (en) 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
US11221561B2 (en) 2020-01-14 2022-01-11 Kla Corporation System and method for wafer-by-wafer overlay feedforward and lot-to-lot feedback control
CN111458984A (en) * 2020-03-13 2020-07-28 华中科技大学 Step-by-step optimization method for overlay mark and measurement configuration
CN115428139B (en) * 2020-04-15 2024-04-12 科磊股份有限公司 Offset targets with device level features useful for measuring semiconductor device offset
US11300405B2 (en) * 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
US11556738B2 (en) * 2020-10-01 2023-01-17 Kla Corporation System and method for determining target feature focus in image-based overlay metrology
US11460783B2 (en) * 2021-01-07 2022-10-04 Kla Corporation System and method for focus control in extreme ultraviolet lithography systems using a focus-sensitive metrology target
US11703767B2 (en) 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
US11720031B2 (en) 2021-06-28 2023-08-08 Kla Corporation Overlay design for electron beam and scatterometry overlay measurements
US11862524B2 (en) 2021-06-28 2024-01-02 Kla Corporation Overlay mark design for electron beam overlay
US12085385B2 (en) 2021-10-06 2024-09-10 Kla Corporation Design-assisted large field of view metrology
CN117546090B (en) * 2021-10-21 2025-05-13 科磊股份有限公司 Inductive displacement for improved overlay error metering
EP4202552B1 (en) * 2021-12-24 2024-04-17 Imec VZW Method and structure for determining an overlay error
US12354970B2 (en) 2022-04-08 2025-07-08 Nanya Technology Corporation Semiconductor device structure with overlay mark
US12243832B2 (en) 2022-04-08 2025-03-04 Nanya Technology Corporation Method for manufacturing semiconductor device structure with overlay marks
TWI809931B (en) * 2022-04-08 2023-07-21 南亞科技股份有限公司 Method for fabricating semiconductor device structure with overlay mark

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US7068833B1 (en) 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US6432591B1 (en) * 2000-08-30 2002-08-13 Micron Technology, Inc. Overlay target design method with pitch determination to minimize impact of lens aberrations
WO2002019415A1 (en) 2000-08-30 2002-03-07 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US6486954B1 (en) 2000-09-01 2002-11-26 Kla-Tencor Technologies Corporation Overlay alignment measurement mark
US20030002043A1 (en) 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
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Also Published As

Publication number Publication date
WO2019113262A1 (en) 2019-06-13
US10474040B2 (en) 2019-11-12
JP7118152B2 (en) 2022-08-15
US20190179231A1 (en) 2019-06-13
TWI781259B (en) 2022-10-21
JP2021505959A (en) 2021-02-18
EP3721294A1 (en) 2020-10-14
EP3721294B1 (en) 2025-05-28
CN111433676B (en) 2022-08-05
KR20200086748A (en) 2020-07-17
TW201935148A (en) 2019-09-01
KR102435141B1 (en) 2022-08-22
EP3721294A4 (en) 2021-09-01
CN111433676A (en) 2020-07-17

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