SG11202000620SA - Substrate treatment apparatus, method for manufacturing semiconductor device, and program - Google Patents
Substrate treatment apparatus, method for manufacturing semiconductor device, and programInfo
- Publication number
- SG11202000620SA SG11202000620SA SG11202000620SA SG11202000620SA SG11202000620SA SG 11202000620S A SG11202000620S A SG 11202000620SA SG 11202000620S A SG11202000620S A SG 11202000620SA SG 11202000620S A SG11202000620S A SG 11202000620SA SG 11202000620S A SG11202000620S A SG 11202000620SA
- Authority
- SG
- Singapore
- Prior art keywords
- program
- semiconductor device
- treatment apparatus
- manufacturing semiconductor
- substrate treatment
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2017/033044 WO2019053806A1 (en) | 2017-09-13 | 2017-09-13 | Substrate treatment apparatus, method for manufacturing semiconductor device, and program |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202000620SA true SG11202000620SA (en) | 2020-02-27 |
Family
ID=65722580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202000620SA SG11202000620SA (en) | 2017-09-13 | 2017-09-13 | Substrate treatment apparatus, method for manufacturing semiconductor device, and program |
Country Status (6)
Country | Link |
---|---|
US (1) | US11145491B2 (en) |
JP (1) | JP6805358B2 (en) |
KR (1) | KR102501660B1 (en) |
CN (1) | CN111033701B (en) |
SG (1) | SG11202000620SA (en) |
WO (1) | WO2019053806A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019058597A1 (en) * | 2017-09-20 | 2019-03-28 | 株式会社Kokusai Electric | Substrate processing device, semiconductor device production method, and program |
JP7025012B2 (en) * | 2018-04-19 | 2022-02-24 | 株式会社Soken | Electronic component characteristic detection device |
WO2024053140A1 (en) * | 2022-09-09 | 2024-03-14 | 株式会社Kokusai Electric | Substrate treatment method, production method for semiconductor device, program, and substrate treatment device |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58127334U (en) * | 1982-02-22 | 1983-08-29 | 田嶋 晴光 | thermocouple |
US5525159A (en) * | 1993-12-17 | 1996-06-11 | Tokyo Electron Limited | Plasma process apparatus |
JPH0922795A (en) * | 1995-07-04 | 1997-01-21 | Sony Corp | Device and method for plasma cvd |
US6017221A (en) | 1995-12-04 | 2000-01-25 | Flamm; Daniel L. | Process depending on plasma discharges sustained by inductive coupling |
US5965034A (en) * | 1995-12-04 | 1999-10-12 | Mc Electronics Co., Ltd. | High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced |
JP3269407B2 (en) | 1996-10-21 | 2002-03-25 | トヨタ自動車株式会社 | Failure diagnosis device for evaporation purge system |
US6486081B1 (en) * | 1998-11-13 | 2002-11-26 | Applied Materials, Inc. | Gas distribution system for a CVD processing chamber |
JP2002009044A (en) * | 2000-06-23 | 2002-01-11 | Mitsubishi Electric Corp | Semiconductor-treating device and method and semiconductor device performing treatment thereby and its manufacturing method |
US7514377B2 (en) | 2002-12-27 | 2009-04-07 | Hitachi Kokusai Electric Inc. | Plasma generator, ozone generator, substrate processing apparatus and manufacturing method of semiconductor device |
JP4490938B2 (en) | 2006-04-20 | 2010-06-30 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
JP5185790B2 (en) * | 2008-11-27 | 2013-04-17 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
JP5184334B2 (en) * | 2008-12-26 | 2013-04-17 | 山里産業株式会社 | Probe for temperature measurement |
JP5577160B2 (en) * | 2010-06-07 | 2014-08-20 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus and plasma processing method |
JP6085079B2 (en) * | 2011-03-28 | 2017-02-22 | 東京エレクトロン株式会社 | Pattern forming method, temperature control method for member in processing container, and substrate processing system |
JP2013045933A (en) | 2011-08-25 | 2013-03-04 | Spp Technologies Co Ltd | Plasma substrate processing apparatus, control program therefor, and computer readable storage medium recording the same |
WO2013121493A1 (en) * | 2012-02-17 | 2013-08-22 | シャープ株式会社 | Semiconductor processing system, semiconductor device manufacturing method, device data collecting method, control program, and readable storage medium |
JP2013197449A (en) * | 2012-03-22 | 2013-09-30 | Hitachi Kokusai Electric Inc | Substrate processing method and substrate processing device |
JP6257071B2 (en) | 2012-09-12 | 2018-01-10 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
JP6162980B2 (en) * | 2013-03-01 | 2017-07-12 | 株式会社日立国際電気 | Plasma processing apparatus and plasma processing method |
JPWO2015108065A1 (en) * | 2014-01-15 | 2017-03-23 | 東京エレクトロン株式会社 | Film forming method and heat treatment apparatus |
US20160372306A1 (en) * | 2015-06-18 | 2016-12-22 | Tokyo Electron Limited | Method for Controlling Plasma Uniformity in Plasma Processing Systems |
JP6568822B2 (en) * | 2016-05-16 | 2019-08-28 | 東京エレクトロン株式会社 | Etching method |
WO2017221808A1 (en) * | 2016-06-20 | 2017-12-28 | 東京エレクトロン株式会社 | Method for treating workpiece |
JP6796519B2 (en) * | 2017-03-10 | 2020-12-09 | 東京エレクトロン株式会社 | Etching method |
JP7071175B2 (en) * | 2017-04-18 | 2022-05-18 | 東京エレクトロン株式会社 | How to process the object to be processed |
-
2017
- 2017-09-13 SG SG11202000620SA patent/SG11202000620SA/en unknown
- 2017-09-13 KR KR1020207001651A patent/KR102501660B1/en active Active
- 2017-09-13 CN CN201780093745.9A patent/CN111033701B/en active Active
- 2017-09-13 WO PCT/JP2017/033044 patent/WO2019053806A1/en active Application Filing
- 2017-09-13 JP JP2019541539A patent/JP6805358B2/en active Active
-
2020
- 2020-01-30 US US16/776,693 patent/US11145491B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US11145491B2 (en) | 2021-10-12 |
KR102501660B1 (en) | 2023-02-20 |
JPWO2019053806A1 (en) | 2020-03-26 |
CN111033701A (en) | 2020-04-17 |
CN111033701B (en) | 2023-08-04 |
JP6805358B2 (en) | 2020-12-23 |
KR20200019218A (en) | 2020-02-21 |
US20200168434A1 (en) | 2020-05-28 |
WO2019053806A1 (en) | 2019-03-21 |
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