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SG11202000620SA - Substrate treatment apparatus, method for manufacturing semiconductor device, and program - Google Patents

Substrate treatment apparatus, method for manufacturing semiconductor device, and program

Info

Publication number
SG11202000620SA
SG11202000620SA SG11202000620SA SG11202000620SA SG11202000620SA SG 11202000620S A SG11202000620S A SG 11202000620SA SG 11202000620S A SG11202000620S A SG 11202000620SA SG 11202000620S A SG11202000620S A SG 11202000620SA SG 11202000620S A SG11202000620S A SG 11202000620SA
Authority
SG
Singapore
Prior art keywords
program
semiconductor device
treatment apparatus
manufacturing semiconductor
substrate treatment
Prior art date
Application number
SG11202000620SA
Inventor
Masaki Murobayashi
Koichiro Harada
Hiroto Igawa
Teruo Yoshino
Masanori Nakayama
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Publication of SG11202000620SA publication Critical patent/SG11202000620SA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211Antennas, e.g. particular shapes of coils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/16Vessels; Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32467Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32522Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645Radiofrequency discharges
    • H05H1/4652Radiofrequency discharges using inductive coupling means, e.g. coils

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Formation Of Insulating Films (AREA)
SG11202000620SA 2017-09-13 2017-09-13 Substrate treatment apparatus, method for manufacturing semiconductor device, and program SG11202000620SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/033044 WO2019053806A1 (en) 2017-09-13 2017-09-13 Substrate treatment apparatus, method for manufacturing semiconductor device, and program

Publications (1)

Publication Number Publication Date
SG11202000620SA true SG11202000620SA (en) 2020-02-27

Family

ID=65722580

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202000620SA SG11202000620SA (en) 2017-09-13 2017-09-13 Substrate treatment apparatus, method for manufacturing semiconductor device, and program

Country Status (6)

Country Link
US (1) US11145491B2 (en)
JP (1) JP6805358B2 (en)
KR (1) KR102501660B1 (en)
CN (1) CN111033701B (en)
SG (1) SG11202000620SA (en)
WO (1) WO2019053806A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019058597A1 (en) * 2017-09-20 2019-03-28 株式会社Kokusai Electric Substrate processing device, semiconductor device production method, and program
JP7025012B2 (en) * 2018-04-19 2022-02-24 株式会社Soken Electronic component characteristic detection device
WO2024053140A1 (en) * 2022-09-09 2024-03-14 株式会社Kokusai Electric Substrate treatment method, production method for semiconductor device, program, and substrate treatment device

Family Cites Families (25)

* Cited by examiner, † Cited by third party
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JPS58127334U (en) * 1982-02-22 1983-08-29 田嶋 晴光 thermocouple
US5525159A (en) * 1993-12-17 1996-06-11 Tokyo Electron Limited Plasma process apparatus
JPH0922795A (en) * 1995-07-04 1997-01-21 Sony Corp Device and method for plasma cvd
US6017221A (en) 1995-12-04 2000-01-25 Flamm; Daniel L. Process depending on plasma discharges sustained by inductive coupling
US5965034A (en) * 1995-12-04 1999-10-12 Mc Electronics Co., Ltd. High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced
JP3269407B2 (en) 1996-10-21 2002-03-25 トヨタ自動車株式会社 Failure diagnosis device for evaporation purge system
US6486081B1 (en) * 1998-11-13 2002-11-26 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
JP2002009044A (en) * 2000-06-23 2002-01-11 Mitsubishi Electric Corp Semiconductor-treating device and method and semiconductor device performing treatment thereby and its manufacturing method
US7514377B2 (en) 2002-12-27 2009-04-07 Hitachi Kokusai Electric Inc. Plasma generator, ozone generator, substrate processing apparatus and manufacturing method of semiconductor device
JP4490938B2 (en) 2006-04-20 2010-06-30 株式会社日立ハイテクノロジーズ Plasma processing equipment
JP5185790B2 (en) * 2008-11-27 2013-04-17 株式会社日立ハイテクノロジーズ Plasma processing equipment
JP5184334B2 (en) * 2008-12-26 2013-04-17 山里産業株式会社 Probe for temperature measurement
JP5577160B2 (en) * 2010-06-07 2014-08-20 株式会社日立ハイテクノロジーズ Plasma processing apparatus and plasma processing method
JP6085079B2 (en) * 2011-03-28 2017-02-22 東京エレクトロン株式会社 Pattern forming method, temperature control method for member in processing container, and substrate processing system
JP2013045933A (en) 2011-08-25 2013-03-04 Spp Technologies Co Ltd Plasma substrate processing apparatus, control program therefor, and computer readable storage medium recording the same
WO2013121493A1 (en) * 2012-02-17 2013-08-22 シャープ株式会社 Semiconductor processing system, semiconductor device manufacturing method, device data collecting method, control program, and readable storage medium
JP2013197449A (en) * 2012-03-22 2013-09-30 Hitachi Kokusai Electric Inc Substrate processing method and substrate processing device
JP6257071B2 (en) 2012-09-12 2018-01-10 株式会社日立国際電気 Substrate processing apparatus and semiconductor device manufacturing method
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JPWO2015108065A1 (en) * 2014-01-15 2017-03-23 東京エレクトロン株式会社 Film forming method and heat treatment apparatus
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JP6568822B2 (en) * 2016-05-16 2019-08-28 東京エレクトロン株式会社 Etching method
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JP6796519B2 (en) * 2017-03-10 2020-12-09 東京エレクトロン株式会社 Etching method
JP7071175B2 (en) * 2017-04-18 2022-05-18 東京エレクトロン株式会社 How to process the object to be processed

Also Published As

Publication number Publication date
US11145491B2 (en) 2021-10-12
KR102501660B1 (en) 2023-02-20
JPWO2019053806A1 (en) 2020-03-26
CN111033701A (en) 2020-04-17
CN111033701B (en) 2023-08-04
JP6805358B2 (en) 2020-12-23
KR20200019218A (en) 2020-02-21
US20200168434A1 (en) 2020-05-28
WO2019053806A1 (en) 2019-03-21

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