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SG11201909742XA - Semiconductor inspection device - Google Patents

Semiconductor inspection device

Info

Publication number
SG11201909742XA
SG11201909742XA SG11201909742XA SG11201909742XA SG 11201909742X A SG11201909742X A SG 11201909742XA SG 11201909742X A SG11201909742X A SG 11201909742XA SG 11201909742X A SG11201909742X A SG 11201909742XA
Authority
SG
Singapore
Prior art keywords
optical path
deflection angle
galvano mirrors
mirror
controls
Prior art date
Application number
Inventor
Tomonori Nakamura
Yoshitaka IWAKI
Original Assignee
Hamamatsu Photonics Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Publication of SG11201909742XA publication Critical patent/SG11201909742XA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G02B26/105—Scanning systems with one or more pivoting mirrors or galvano-mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G02B26/12—Scanning systems using multifaceted mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/32—Optical coupling means having lens focusing means positioned between opposed fibre ends
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N2021/0106—General arrangement of respective parts
    • G01N2021/0112—Apparatus in one mechanical, optical or electronic block
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • General Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)

Abstract

An inspection system includes a light source, a mirror, Galvano mirrors, a casing that holds the mirror and the Galvano mirrors inside and includes an attachment portion for attaching an optical element, and a control unit that controls a deflection angle of the Galvano mirrors, 5 wherein the control unit controls the deflection angle so that an optical path optically connected to a semiconductor device is switched between a first optical path passing through the Galvano mirrors and the mirror, and a second optical path passing through the Galvano mirrors and the attachment portion, and controls the deflection angle so that the 10 deflection angle when switching to the first optical path has been performed and the deflection angle when switching to the second optical path has been performed do not overlap. Figure 2 15
SG11201909742X 2017-06-02 2018-03-07 Semiconductor inspection device SG11201909742XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017109918A JP6419893B1 (en) 2017-06-02 2017-06-02 Semiconductor inspection equipment
PCT/JP2018/008830 WO2018220931A1 (en) 2017-06-02 2018-03-07 Semiconductor inspection device

Publications (1)

Publication Number Publication Date
SG11201909742XA true SG11201909742XA (en) 2019-11-28

Family

ID=64098718

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201909742X SG11201909742XA (en) 2017-06-02 2018-03-07 Semiconductor inspection device

Country Status (8)

Country Link
US (2) US11209476B2 (en)
EP (2) EP3633355B1 (en)
JP (1) JP6419893B1 (en)
KR (2) KR102562196B1 (en)
CN (2) CN110691968B (en)
SG (1) SG11201909742XA (en)
TW (2) TWI769229B (en)
WO (1) WO2018220931A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6820184B2 (en) * 2016-10-26 2021-01-27 浜松ホトニクス株式会社 Semiconductor device inspection method and semiconductor device inspection equipment
US11536792B2 (en) * 2020-04-30 2022-12-27 Applied Materials Israel Ltd. Test of an examination tool
EP4148438A4 (en) * 2020-05-26 2024-04-17 Hamamatsu Photonics K.K. SEMICONDUCTOR COMPONENT INSPECTION METHOD AND SEMICONDUCTOR COMPONENT INSPECTION APPARATUS
JP7579853B2 (en) * 2020-05-26 2024-11-08 浜松ホトニクス株式会社 Semiconductor device inspection method and semiconductor device inspection apparatus
JP7306355B2 (en) * 2020-09-23 2023-07-11 トヨタ自動車株式会社 Conversion adapter
CN112485271B (en) * 2020-12-04 2024-07-05 中山市东照照明有限公司 PCB board detection device

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JPH0580497A (en) * 1991-09-20 1993-04-02 Canon Inc Surface state inspecting device
JPH05129399A (en) * 1991-11-01 1993-05-25 Toshiba Corp Surface attached particle detection device
JP3798481B2 (en) * 1996-10-16 2006-07-19 株式会社キーエンス Laser marking device
JPH11197109A (en) * 1998-01-19 1999-07-27 Kowa Co Scanning laser ophthalmoscope
CN1129788C (en) * 1998-08-10 2003-12-03 三菱电机株式会社 Inspection device for printed circuit board
JP2002353558A (en) * 2001-05-25 2002-12-06 Opnext Japan Inc Semiconductor laser module and optical-fiber communication device using the same
JP5110894B2 (en) * 2007-02-05 2012-12-26 株式会社ジャパンディスプレイウェスト Defect correction apparatus, wiring board manufacturing method, display device manufacturing method
EP2169442B1 (en) * 2007-07-19 2015-10-28 Nikon Corporation Scanning type confocal microscope
US7952374B2 (en) 2008-06-02 2011-05-31 Quantum Focus Instruments Corporation Transient emission scanning microscopy
JP2009295414A (en) 2008-06-05 2009-12-17 Panasonic Corp Induction heating cooker
JP5187843B2 (en) * 2008-09-01 2013-04-24 浜松ホトニクス株式会社 Semiconductor inspection apparatus and inspection method
JP5231927B2 (en) * 2008-10-06 2013-07-10 株式会社日立ハイテクノロジーズ Microprojection inspection device
JP2011075441A (en) * 2009-09-30 2011-04-14 Hamamatsu Photonics Kk Semiconductor device failure analysis apparatus
JP2012083351A (en) * 2011-10-17 2012-04-26 Hitachi High-Technologies Corp Defect inspection device and method of the same
US8836934B1 (en) * 2012-05-15 2014-09-16 The Boeing Company Contamination identification system
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Also Published As

Publication number Publication date
EP3633355B1 (en) 2024-08-07
US11714120B2 (en) 2023-08-01
CN110691968B (en) 2022-08-26
TWI831288B (en) 2024-02-01
TW201903394A (en) 2019-01-16
WO2018220931A1 (en) 2018-12-06
EP3633355C0 (en) 2024-08-07
KR20220150993A (en) 2022-11-11
US20200110129A1 (en) 2020-04-09
KR102562196B1 (en) 2023-08-02
JP2018205083A (en) 2018-12-27
US11209476B2 (en) 2021-12-28
US20220050137A1 (en) 2022-02-17
TW202242395A (en) 2022-11-01
CN110691968A (en) 2020-01-14
EP3633355A4 (en) 2021-03-31
CN115326827A (en) 2022-11-11
EP3633355A1 (en) 2020-04-08
EP4414694A3 (en) 2024-11-13
JP6419893B1 (en) 2018-11-07
KR20200013639A (en) 2020-02-07
EP4414694A2 (en) 2024-08-14
KR102459819B1 (en) 2022-10-27
TWI769229B (en) 2022-07-01

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