[go: up one dir, main page]

SG11201907515WA - Bottom and middle edge rings - Google Patents

Bottom and middle edge rings

Info

Publication number
SG11201907515WA
SG11201907515WA SG11201907515WA SG11201907515WA SG11201907515WA SG 11201907515W A SG11201907515W A SG 11201907515WA SG 11201907515W A SG11201907515W A SG 11201907515WA SG 11201907515W A SG11201907515W A SG 11201907515WA SG 11201907515W A SG11201907515W A SG 11201907515WA
Authority
SG
Singapore
Prior art keywords
international
fremont
california
ho1l
pct
Prior art date
Application number
SG11201907515WA
Inventor
Hiran Rajitha Rathnasinghe
Shawn E S Tokairin
Jon Mcchesney
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=66631121&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG11201907515W(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG11201907515WA publication Critical patent/SG11201907515WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H10P72/0421—
    • H10P72/0436—
    • H10P72/74—
    • H10P72/7606—
    • H10P72/7611—
    • H10P72/7612—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)

Abstract

316 336 372 376 304 W O 20 19/ 1037 22 Al -364 r -344 136 0 388 384 j --324 348 320 FIG. 3B 352 356 312 308-f - (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 31 May 2019 (31.05.2019) WIPO I PCT 111111111111110111111111111111101111101011111111111111111111111011101111111011110111111 (10) International Publication Number WO 2019/103722 Al (51) International Patent Classification: HO1L 21/687 (2006.01) HO1L 21/67 (2006.01) HO1L 21/683 (2006.01) (21) International Application Number: PCT/US2017/062769 (22) International Filing Date: 21 November 2017 (21.11.2017) (25) Filing Language: English (26) Publication Language: English (71) Applicant: LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway, Fremont, California 94538 (US). (72) Inventors: RATHNASINGHE, Hiran Rajitha; 4300 Cushing Parkway, CA4 1011, Fremont, California 94538 (US). TOKAIRIN, Shawn E S; 40971 Cruz Ct., Fremont, California 94539 (US). MCCHESNEY, Jon; 46509 Fre- mont Blvd., #104, Fremont, California 94539 (US). (74) Agent: CHAPP, Jeffrey J. et al.; HARNESS, DICKEY & PIERCE, P.L. C., P.O. Box 828, Bloomfield Hills, Michigan 48303 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, 1E, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: — of inventorship (Rule 4.17(iv)) Published: with international search report (Art. 21(3)) (54) Title: BOTTOM AND MIDDLE EDGE RINGS (57) : A bottom ring is configured to support a moveable edge ring. The edge ring is configured to be raised and lowered relative to a substrate support. The bottom ring includes an upper surface that is stepped, an annular inner diameter, an annular outer diameter, a lower surface, and a plurality of vertical guide chan- nels provided through the bottom ring from the lower surface to the upper surface of the bottom ring. Each of the guide channels includes a first region having a smaller diameter than the guide channel, and the guide channels are configured to receive respec- tive lift pins for raising and lowering the edge ring.
SG11201907515WA 2017-11-21 2017-11-21 Bottom and middle edge rings SG11201907515WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2017/062769 WO2019103722A1 (en) 2017-11-21 2017-11-21 Bottom and middle edge rings

Publications (1)

Publication Number Publication Date
SG11201907515WA true SG11201907515WA (en) 2019-09-27

Family

ID=66631121

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201907515WA SG11201907515WA (en) 2017-11-21 2017-11-21 Bottom and middle edge rings

Country Status (7)

Country Link
US (4) US12237154B2 (en)
EP (3) EP3843129B1 (en)
JP (5) JP6878616B2 (en)
KR (7) KR102254224B1 (en)
CN (6) CN118380371A (en)
SG (1) SG11201907515WA (en)
WO (1) WO2019103722A1 (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
SG11201907515WA (en) 2017-11-21 2019-09-27 Lam Res Corp Bottom and middle edge rings
US11798789B2 (en) 2018-08-13 2023-10-24 Lam Research Corporation Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features
JP7140610B2 (en) * 2018-09-06 2022-09-21 株式会社日立ハイテク Plasma processing equipment
JP7105666B2 (en) * 2018-09-26 2022-07-25 東京エレクトロン株式会社 Plasma processing equipment
WO2020257095A1 (en) * 2019-06-18 2020-12-24 Lam Research Corporation Reduced diameter carrier ring hardware for substrate processing systems
TWM602283U (en) * 2019-08-05 2020-10-01 美商蘭姆研究公司 Edge ring with lift pin grooves for a substrate processing system
JP7597788B2 (en) * 2019-08-05 2024-12-10 ラム リサーチ コーポレーション Edge ring system for substrate processing system
CN114223054A (en) * 2019-08-14 2022-03-22 朗姆研究公司 Movable edge ring for substrate processing system
KR102747645B1 (en) * 2019-10-10 2024-12-27 삼성전자주식회사 Electro-static chuck and substrate processing apparatus including the same
TWI904132B (en) * 2020-02-04 2025-11-11 美商蘭姆研究公司 Electrostatic edge ring mounting system for substrate processing
GB202002798D0 (en) * 2020-02-27 2020-04-15 Lam Res Ag Apparatus for processing a wafer
US12444579B2 (en) 2020-03-23 2025-10-14 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
KR102848914B1 (en) 2020-05-07 2025-08-21 엘지전자 주식회사 Laundry Treatment Apparatus
US11600516B2 (en) * 2020-05-13 2023-03-07 Asmpt Singapore Pte. Ltd. Die ejector height adjustment
JP7455012B2 (en) * 2020-07-07 2024-03-25 東京エレクトロン株式会社 Plasma processing equipment and mounting table for plasma processing equipment
US11380575B2 (en) * 2020-07-27 2022-07-05 Applied Materials, Inc. Film thickness uniformity improvement using edge ring and bias electrode geometry
US12381029B2 (en) * 2020-09-25 2025-08-05 Intel Corporation Stepped coax MIL PTHS for modulating inductance within a package
CN112397366B (en) * 2020-11-05 2023-07-14 北京北方华创微电子装备有限公司 A carrying device and a semiconductor reaction chamber
CN116250072A (en) * 2020-11-19 2023-06-09 应用材料公司 Rings for extreme edge protection of substrates
KR102327270B1 (en) 2020-12-03 2021-11-17 피에스케이 주식회사 Support unit, apparatus for treating a substrate and method for treating a substrate
KR102904705B1 (en) * 2021-11-09 2025-12-29 삼성전자주식회사 Focus ring, apparatus for substrate treatment including the same and method for substrate treatment using the same
KR102427214B1 (en) * 2021-11-12 2022-08-01 비씨엔씨 주식회사 A focus ring assembly for semiconductors that can be combined and disassembled
TWM639962U (en) * 2021-12-03 2023-04-21 美商蘭姆研究公司 Wide-coverage edge ring and edge ring system for enhanced shielding in substrate processing systems
KR20240161340A (en) * 2023-05-04 2024-11-12 삼성전자주식회사 Focus ring and apparatus for processing a substrate including the same
KR102900293B1 (en) * 2024-10-29 2025-12-12 나이스 스타 코퍼레이션 Focus ring for wafer etching

Family Cites Families (461)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3534753A (en) 1968-03-18 1970-10-20 Veriflo Corp Ratio controller for gases
DE2831856B2 (en) 1978-07-20 1981-07-02 Drägerwerk AG, 2400 Lübeck Arrangement for electrically controlled dosing and mixing of gases
NL8004005A (en) 1980-07-11 1982-02-01 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
US4431477A (en) 1983-07-05 1984-02-14 Matheson Gas Products, Inc. Plasma etching with nitrous oxide and fluoro compound gas mixture
US4793897A (en) 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
US5190823A (en) 1989-07-31 1993-03-02 General Electric Company Method for improving adhesion of synthetic diamond coatings to substrates
EP0424299A3 (en) 1989-10-20 1991-08-28 International Business Machines Corporation Selective silicon nitride plasma etching
US5304248A (en) 1990-12-05 1994-04-19 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
US5220515A (en) 1991-04-22 1993-06-15 Applied Materials, Inc. Flow verification for process gas in a wafer processing system apparatus and method
US6165311A (en) 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6024826A (en) 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5376214A (en) 1992-09-22 1994-12-27 Nissan Motor Co., Ltd. Etching device
US5346578A (en) 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
US5413145A (en) 1993-04-19 1995-05-09 Texaco Inc. Low-pressure-drop critical flow venturi
US5329965A (en) 1993-07-30 1994-07-19 The Perkin-Elmer Corporation Hybrid valving system for varying fluid flow rate
JP2638443B2 (en) 1993-08-31 1997-08-06 日本電気株式会社 Dry etching method and dry etching apparatus
US5520969A (en) 1994-02-04 1996-05-28 Applied Materials, Inc. Method for in-situ liquid flow rate estimation and verification
TW254030B (en) 1994-03-18 1995-08-11 Anelva Corp Mechanic escape mechanism for substrate
US6003185A (en) 1994-07-15 1999-12-21 Ontrak Systems, Inc. Hesitation free roller
US5762714A (en) 1994-10-18 1998-06-09 Applied Materials, Inc. Plasma guard for chamber equipped with electrostatic chuck
US5605179A (en) 1995-03-17 1997-02-25 Insync Systems, Inc. Integrated gas panel
US5886863A (en) * 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
US5683517A (en) 1995-06-07 1997-11-04 Applied Materials, Inc. Plasma reactor with programmable reactant gas distribution
US5702530A (en) 1995-06-23 1997-12-30 Applied Materials, Inc. Distributed microwave plasma reactor for semiconductor processing
US6050283A (en) 1995-07-07 2000-04-18 Air Liquide America Corporation System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing
TW283250B (en) 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US5907221A (en) 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
JP2713276B2 (en) 1995-12-07 1998-02-16 日本電気株式会社 Semiconductor device manufacturing apparatus and semiconductor device manufacturing method using the same
US6075606A (en) 1996-02-16 2000-06-13 Doan; Trung T. Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates
US5662143A (en) 1996-05-16 1997-09-02 Gasonics International Modular gas box system
US5952060A (en) 1996-06-14 1999-09-14 Applied Materials, Inc. Use of carbon-based films in extending the lifetime of substrate processing system components
US5879128A (en) 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US5744695A (en) 1997-01-10 1998-04-28 Sony Corporation Apparatus to check calibration of mass flow controllers
JP3247079B2 (en) 1997-02-06 2002-01-15 松下電器産業株式会社 Etching method and etching apparatus
US6210593B1 (en) 1997-02-06 2001-04-03 Matsushita Electric Industrial Co., Ltd. Etching method and etching apparatus
US6062256A (en) 1997-02-11 2000-05-16 Engineering Measurements Company Micro mass flow control apparatus and method
US6376386B1 (en) 1997-02-25 2002-04-23 Fujitsu Limited Method of etching silicon nitride by a mixture of CH2 F2, CH3F or CHF3 and an inert gas
DE19718501A1 (en) 1997-05-02 1998-11-05 Fhp Motors Gmbh Holding device for a stator winding of an electric motor
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6042687A (en) 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
JP3586075B2 (en) 1997-08-15 2004-11-10 忠弘 大見 Pressure type flow controller
US6186092B1 (en) 1997-08-19 2001-02-13 Applied Materials, Inc. Apparatus and method for aligning and controlling edge deposition on a substrate
US6074959A (en) 1997-09-19 2000-06-13 Applied Materials, Inc. Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide
US20030011619A1 (en) 1997-10-08 2003-01-16 Robert S. Jacobs Synchronization and blending of plural images into a seamless combined image
JP2001522142A (en) 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド Improved low mass wafer support system
US6106625A (en) 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
EP1042787B1 (en) 1997-12-23 2005-03-02 Unaxis Balzers Aktiengesellschaft Holding device
US6060400A (en) 1998-03-26 2000-05-09 The Research Foundation Of State University Of New York Highly selective chemical dry etching of silicon nitride over silicon and silicon dioxide
US6048403A (en) 1998-04-01 2000-04-11 Applied Materials, Inc. Multi-ledge substrate support for a thermal processing chamber
US6294466B1 (en) 1998-05-01 2001-09-25 Applied Materials, Inc. HDP-CVD apparatus and process for depositing titanium films for semiconductor devices
US6217937B1 (en) 1998-07-15 2001-04-17 Cornell Research Foundation, Inc. High throughput OMVPE apparatus
JP3830670B2 (en) 1998-09-03 2006-10-04 三菱電機株式会社 Semiconductor manufacturing equipment
JP3076791B2 (en) 1998-10-19 2000-08-14 アプライド マテリアルズ インコーポレイテッド Semiconductor manufacturing equipment
KR20010089376A (en) * 1998-10-29 2001-10-06 조셉 제이. 스위니 Apparatus for coupling power through a workpiece in a semiconductor wafer processing system
US6231716B1 (en) 1998-11-09 2001-05-15 Applied Materials, Inc. Processing chamber with rapid wafer exchange
US6022809A (en) 1998-12-03 2000-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Composite shadow ring for an etch chamber and method of using
US6579805B1 (en) 1999-01-05 2003-06-17 Ronal Systems Corp. In situ chemical generator and method
US7150994B2 (en) 1999-03-03 2006-12-19 Symyx Technologies, Inc. Parallel flow process optimization reactor
US6797189B2 (en) 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
WO2000063756A1 (en) 1999-04-16 2000-10-26 Fujikin Incorporated Parallel bypass type fluid feeding device, and method and device for controlling fluid variable type pressure system flow rate used for the device
US6210482B1 (en) 1999-04-22 2001-04-03 Fujikin Incorporated Apparatus for feeding gases for use in semiconductor manufacturing
US6709547B1 (en) 1999-06-30 2004-03-23 Lam Research Corporation Moveable barrier for multiple etch processes
JP2001023955A (en) 1999-07-07 2001-01-26 Mitsubishi Electric Corp Plasma processing equipment
US6508911B1 (en) 1999-08-16 2003-01-21 Applied Materials Inc. Diamond coated parts in a plasma reactor
EP1214459B1 (en) 1999-08-17 2009-01-07 Tokyo Electron Limited Pulsed plasma processing method and apparatus
US6206976B1 (en) 1999-08-27 2001-03-27 Lucent Technologies Inc. Deposition apparatus and related method with controllable edge exclusion
JP4394778B2 (en) 1999-09-22 2010-01-06 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
KR100315088B1 (en) * 1999-09-29 2001-11-24 윤종용 Apparatus for processing semiconductor wafer having focus ring
JP4592849B2 (en) 1999-10-29 2010-12-08 アプライド マテリアルズ インコーポレイテッド Semiconductor manufacturing equipment
US6589352B1 (en) 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
US6348558B1 (en) 1999-12-10 2002-02-19 Shearwater Corporation Hydrolytically degradable polymers and hydrogels made therefrom
US6605352B1 (en) 2000-01-06 2003-08-12 Saint-Gobain Ceramics & Plastics, Inc. Corrosion and erosion resistant thin film diamond coating and applications therefor
JP2001230239A (en) 2000-02-15 2001-08-24 Tokyo Electron Ltd Apparatus and method for treating
AU2001240104A1 (en) 2000-03-07 2001-09-17 Symyx Technologies, Inc. Parallel flow process optimization reactor
US6645302B2 (en) 2000-04-26 2003-11-11 Showa Denko Kabushiki Kaisha Vapor phase deposition system
JP2001313329A (en) * 2000-04-28 2001-11-09 Applied Materials Inc Wafer support device in semiconductor manufacturing equipment
JP4422295B2 (en) 2000-05-17 2010-02-24 キヤノンアネルバ株式会社 CVD equipment
JP2002009139A (en) * 2000-06-20 2002-01-11 Nikon Corp Electrostatic chuck
TW506234B (en) 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
US20040026149A1 (en) 2000-09-19 2004-02-12 Wilkinson Donald Raymond Occupant restraint
JP2002110570A (en) 2000-10-04 2002-04-12 Asm Japan Kk Gas line system for semiconductor manufacturing apparatus
US6492774B1 (en) 2000-10-04 2002-12-10 Lam Research Corporation Wafer area pressure control for plasma confinement
US6333272B1 (en) 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP3388228B2 (en) 2000-12-07 2003-03-17 株式会社半導体先端テクノロジーズ Plasma etching apparatus and plasma etching method
US6537429B2 (en) 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
JP4433614B2 (en) 2001-01-17 2010-03-17 ソニー株式会社 Etching equipment
JP4477784B2 (en) * 2001-02-02 2010-06-09 東京エレクトロン株式会社 Placement mechanism of workpiece
EP1233333A1 (en) 2001-02-19 2002-08-21 Hewlett-Packard Company Process for executing a downloadable service receiving restrictive access rights to al least one profile file
KR20020071398A (en) 2001-03-06 2002-09-12 삼성전자 주식회사 Apparatus for dry etching in semiconductor device processing
US6962879B2 (en) 2001-03-30 2005-11-08 Lam Research Corporation Method of plasma etching silicon nitride
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
DE10216703A1 (en) 2001-04-20 2002-11-28 Festo Corp Hauppauge Stackable valve manifold arrangement used in industrial or laboratory environment, has top and bottom valve manifolds connected such that lower surface of top manifold opposes upper surface of bottom valve manifold
KR20040019293A (en) 2001-05-24 2004-03-05 셀레리티 그룹 아이엔씨 Method and apparatus for providing a determined ratio of process fluids
US20020189947A1 (en) 2001-06-13 2002-12-19 Eksigent Technologies Llp Electroosmotic flow controller
US6703235B2 (en) 2001-06-25 2004-03-09 Board Of Regents, The University Of Texas System Complex multicellular assemblies ex vivo
US6949704B2 (en) 2001-06-27 2005-09-27 Yamaha Corporation Apparatus for delivering music performance information via communication network and apparatus for receiving and reproducing delivered music performance information
US20030003696A1 (en) 2001-06-29 2003-01-02 Avgerinos Gelatos Method and apparatus for tuning a plurality of processing chambers
JP2003032001A (en) 2001-07-13 2003-01-31 Murata Mfg Co Ltd Compound high frequency switch, high frequency module and communication device
US20030070620A1 (en) 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
AU2002366921A1 (en) 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
EP1324033B1 (en) 2001-12-21 2006-09-20 Agilent Technologies, Inc. (a Delaware corporation) Method for providing flow rates for fluids
US6766260B2 (en) 2002-01-04 2004-07-20 Mks Instruments, Inc. Mass flow ratio system and method
KR20030065126A (en) 2002-01-31 2003-08-06 (주) 엠큐브테크놀로지 System for cooling stimulus coil for use in equipment using magnetic field
US6744212B2 (en) 2002-02-14 2004-06-01 Lam Research Corporation Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions
US6868302B2 (en) 2002-03-25 2005-03-15 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus
US7041200B2 (en) 2002-04-19 2006-05-09 Applied Materials, Inc. Reducing particle generation during sputter deposition
US6814813B2 (en) 2002-04-24 2004-11-09 Micron Technology, Inc. Chemical vapor deposition apparatus
US20030213560A1 (en) 2002-05-16 2003-11-20 Yaxin Wang Tandem wafer processing system and process
JP3856730B2 (en) 2002-06-03 2006-12-13 東京エレクトロン株式会社 A gas diversion supply method to a chamber from a gas supply facility provided with a flow rate control device.
US20040040664A1 (en) 2002-06-03 2004-03-04 Yang Jang Gyoo Cathode pedestal for a plasma etch reactor
US6900877B2 (en) 2002-06-12 2005-05-31 Asm American, Inc. Semiconductor wafer position shift measurement and correction
US6913652B2 (en) 2002-06-17 2005-07-05 Applied Materials, Inc. Gas flow division in a wafer processing system having multiple chambers
US7552015B2 (en) 2002-06-24 2009-06-23 Mks Instruments, Inc. Apparatus and method for displaying mass flow controller pressure
US6810308B2 (en) 2002-06-24 2004-10-26 Mks Instruments, Inc. Apparatus and method for mass flow controller with network access to diagnostics
US7136767B2 (en) 2002-06-24 2006-11-14 Mks Instruments, Inc. Apparatus and method for calibration of mass flow controller
US6841943B2 (en) 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
US7903742B2 (en) 2002-07-15 2011-03-08 Thomson Licensing Adaptive weighting of reference pictures in video decoding
US6843882B2 (en) 2002-07-15 2005-01-18 Applied Materials, Inc. Gas flow control in a wafer processing system having multiple chambers for performing same process
US6938505B2 (en) 2002-08-13 2005-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Chamber wafer detection
US6887317B2 (en) * 2002-09-10 2005-05-03 Applied Materials, Inc. Reduced friction lift pin
US6896765B2 (en) 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
US6895983B2 (en) 2002-09-26 2005-05-24 The Chemithon Corporation Method and apparatus for dividing the flow of a gas stream
US6722642B1 (en) * 2002-11-06 2004-04-20 Tokyo Electron Limited High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism
JP4502590B2 (en) 2002-11-15 2010-07-14 株式会社ルネサステクノロジ Semiconductor manufacturing equipment
US7311784B2 (en) 2002-11-26 2007-12-25 Tokyo Electron Limited Plasma processing device
KR20040050080A (en) 2002-12-09 2004-06-16 주식회사 하이닉스반도체 Apparatus for driving focus ring of plasma etch chamber
US7169231B2 (en) 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
US20040112540A1 (en) 2002-12-13 2004-06-17 Lam Research Corporation Uniform etch system
US6997202B2 (en) 2002-12-17 2006-02-14 Advanced Technology Materials, Inc. Gas storage and dispensing system for variable conductance dispensing of gas at constant flow rate
US6898558B2 (en) 2002-12-31 2005-05-24 Tokyo Electron Limited Method and apparatus for monitoring a material processing system
US20040163601A1 (en) 2003-02-26 2004-08-26 Masanori Kadotani Plasma processing apparatus
US20040168719A1 (en) 2003-02-28 2004-09-02 Masahiro Nambu System for dividing gas flow
US6907904B2 (en) 2003-03-03 2005-06-21 Redwood Microsystems, Inc. Fluid delivery system and mounting panel therefor
JP4286025B2 (en) 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 Method of reclaiming quartz jig, method of reusing and using semiconductor device
JP2004296553A (en) 2003-03-25 2004-10-21 Ngk Insulators Ltd Structural for semiconductor manufacturing equipment
WO2004097919A1 (en) 2003-05-02 2004-11-11 Tokyo Electron Limited Process gas introducng mechanism and plasma processing device
CN100350569C (en) 2003-05-02 2007-11-21 东京毅力科创株式会社 Processing gas introduction mechanism and plasma processing device
JP2005045210A (en) 2003-05-12 2005-02-17 Agere Systems Inc Method of mass flow control, and verification and calibration thereof
JP4500510B2 (en) 2003-06-05 2010-07-14 東京エレクトロン株式会社 Etching amount detection method, etching method, and etching apparatus
CN100454200C (en) 2003-06-09 2009-01-21 喜开理株式会社 Relative pressure control system and relative flow control system
JP4195837B2 (en) 2003-06-20 2008-12-17 東京エレクトロン株式会社 Gas diversion supply apparatus and gas diversion supply method
US6955072B2 (en) 2003-06-25 2005-10-18 Mks Instruments, Inc. System and method for in-situ flow verification and calibration
US7064812B2 (en) 2003-08-19 2006-06-20 Tokyo Electron Limited Method of using a sensor gas to determine erosion level of consumable system components
KR100578129B1 (en) 2003-09-19 2006-05-10 삼성전자주식회사 Plasma etching device
US7137400B2 (en) 2003-09-30 2006-11-21 Agere Systems Inc. Bypass loop gas flow calibration
JP4399227B2 (en) 2003-10-06 2010-01-13 株式会社フジキン Chamber internal pressure control device and internal pressure controlled chamber
US6869348B1 (en) 2003-10-07 2005-03-22 Strasbaugh Retaining ring for wafer carriers
US7129171B2 (en) 2003-10-14 2006-10-31 Lam Research Corporation Selective oxygen-free etching process for barrier materials
US7128806B2 (en) 2003-10-21 2006-10-31 Applied Materials, Inc. Mask etch processing apparatus
KR20050038898A (en) * 2003-10-23 2005-04-29 삼성전자주식회사 Apparatus for dry etching a semiconductor substrate
US20050155625A1 (en) 2004-01-20 2005-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Chamber cleaning method
US7095179B2 (en) 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US7247348B2 (en) 2004-02-25 2007-07-24 Honeywell International, Inc. Method for manufacturing a erosion preventative diamond-like coating for a turbine engine compressor blade
US7072743B2 (en) 2004-03-09 2006-07-04 Mks Instruments, Inc. Semiconductor manufacturing gas flow divider system and method
JP2005288853A (en) 2004-03-31 2005-10-20 Brother Ind Ltd Inkjet head manufacturing method and inkjet head
UA87842C2 (en) 2004-04-29 2009-08-25 Везувіус Крусібл Компані Crucible for crystallization of silicon and method for production thereof
US20070066038A1 (en) 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
JP4407384B2 (en) 2004-05-28 2010-02-03 株式会社Ｓｕｍｃｏ Manufacturing method of SOI substrate
CN102157372B (en) * 2004-06-21 2012-05-30 东京毅力科创株式会社 Plasma processing apparatus and method
US7412986B2 (en) 2004-07-09 2008-08-19 Celerity, Inc. Method and system for flow measurement and validation of a mass flow controller
US7338907B2 (en) 2004-10-04 2008-03-04 Sharp Laboratories Of America, Inc. Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications
US20060124169A1 (en) 2004-12-09 2006-06-15 Tokyo Electron Limited Gas supply unit, substrate processing apparatus, and supply gas setting method
JP2006173223A (en) 2004-12-14 2006-06-29 Toshiba Corp Plasma etching apparatus and plasma etching method using the same
JP4006004B2 (en) 2004-12-28 2007-11-14 株式会社東芝 Semiconductor manufacturing apparatus and semiconductor device manufacturing method
KR20070114349A (en) 2004-12-30 2007-12-03 이 아이 듀폰 디 네모아 앤드 캄파니 Electronic device with optical resonator
JP4707421B2 (en) 2005-03-14 2011-06-22 東京エレクトロン株式会社 Processing apparatus, consumable part management method for processing apparatus, processing system, and consumable part management method for processing system
US7376520B2 (en) 2005-03-16 2008-05-20 Lam Research Corporation System and method for gas flow verification
US7621290B2 (en) 2005-04-21 2009-11-24 Mks Instruments, Inc. Gas delivery method and system including a flow ratio controller using antisymmetric optimal control
US7288482B2 (en) 2005-05-04 2007-10-30 International Business Machines Corporation Silicon nitride etching methods
JP2006344701A (en) 2005-06-08 2006-12-21 Matsushita Electric Ind Co Ltd Etching apparatus and etching method
KR100621778B1 (en) 2005-06-17 2006-09-11 삼성전자주식회사 Plasma processing equipment
US20070021935A1 (en) 2005-07-12 2007-01-25 Larson Dean J Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber
US7431788B2 (en) * 2005-07-19 2008-10-07 Lam Research Corporation Method of protecting a bond layer in a substrate support adapted for use in a plasma processing system
US7322629B2 (en) 2005-07-26 2008-01-29 Intier Automotive Inc. Locking hinge for a door structure
US7291560B2 (en) 2005-08-01 2007-11-06 Infineon Technologies Ag Method of production pitch fractionizations in semiconductor technology
US7344596B2 (en) 2005-08-25 2008-03-18 Crystal Systems, Inc. System and method for crystal growing
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
JP4895167B2 (en) 2006-01-31 2012-03-14 東京エレクトロン株式会社 Gas supply apparatus, substrate processing apparatus, and gas supply method
US20070187363A1 (en) 2006-02-13 2007-08-16 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
JP4909609B2 (en) 2006-03-01 2012-04-04 株式会社東芝 Machining shape simulation method, semiconductor device manufacturing method, and machining shape simulation system
US20070204914A1 (en) 2006-03-01 2007-09-06 Asahi Organic Chemicals Industry Co., Ltd. Fluid mixing system
US7578258B2 (en) 2006-03-03 2009-08-25 Lam Research Corporation Methods and apparatus for selective pre-coating of a plasma processing chamber
US20070208427A1 (en) 2006-03-06 2007-09-06 Davidson Marc G Prosthesis for joint replacement
JP4788920B2 (en) 2006-03-20 2011-10-05 日立金属株式会社 Mass flow control device, verification method thereof, and semiconductor manufacturing device
US7674337B2 (en) 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
US8997791B2 (en) 2006-04-14 2015-04-07 Mks Instruments, Inc. Multiple-channel flow ratio controller
US8475625B2 (en) 2006-05-03 2013-07-02 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US8440049B2 (en) 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US20070283884A1 (en) 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
JP2007332022A (en) 2006-06-13 2007-12-27 Young Sang Cho Apparatus for producing polycrystalline silicon ingot
US7777152B2 (en) 2006-06-13 2010-08-17 Applied Materials, Inc. High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
JP4814706B2 (en) 2006-06-27 2011-11-16 株式会社フジキン Flow ratio variable type fluid supply device
JP4806598B2 (en) 2006-07-18 2011-11-02 株式会社日立ハイテクノロジーズ Vacuum processing equipment
KR101352365B1 (en) 2006-08-09 2014-01-16 엘아이지에이디피 주식회사 Plasma processing apparatus
US8196609B2 (en) 2006-08-23 2012-06-12 Horiba Stec, Co., Ltd. Integrated gas panel apparatus
KR20080023569A (en) 2006-09-11 2008-03-14 주식회사 하이닉스반도체 Plasma Etching Device to Prevent Etch Profile Deformation
US7757541B1 (en) 2006-09-13 2010-07-20 Pivotal Systems Corporation Techniques for calibration of gas flows
KR100803858B1 (en) 2006-09-21 2008-02-14 현대자동차주식회사 Helical Gear Processing Fixture
US7309646B1 (en) 2006-10-10 2007-12-18 Lam Research Corporation De-fluoridation process
US7875824B2 (en) 2006-10-16 2011-01-25 Lam Research Corporation Quartz guard ring centering features
WO2008052168A2 (en) 2006-10-26 2008-05-02 Symyx Technologies, Inc. High pressure parallel fixed bed reactor and method
US7964818B2 (en) 2006-10-30 2011-06-21 Applied Materials, Inc. Method and apparatus for photomask etching
US9405298B2 (en) 2006-11-20 2016-08-02 Applied Materials, Inc. System and method to divide fluid flow in a predetermined ratio
US7758698B2 (en) 2006-11-28 2010-07-20 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US20080121177A1 (en) 2006-11-28 2008-05-29 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
KR101444964B1 (en) 2006-12-05 2014-09-26 가부시키가이샤 호리바 에스텍 Flow controller, flow measuring device testing method, flow controller testing system, and semiconductor manufacturing apparatus
JP4642115B2 (en) 2006-12-12 2011-03-02 株式会社堀場エステック Flow rate ratio controller
SE530902C2 (en) 2006-12-19 2008-10-14 Alfa Laval Corp Ab Sectioned flow device and method for controlling the temperature thereof
JP4792381B2 (en) * 2006-12-25 2011-10-12 東京エレクトロン株式会社 Substrate processing apparatus, focus ring heating method, and substrate processing method
KR100783062B1 (en) 2006-12-27 2007-12-07 세메스 주식회사 Substrate Supporting Device, Plasma Etching Device and Plasma Etching Method
TW200832901A (en) 2007-01-18 2008-08-01 Asustek Comp Inc Filter circuit for reducing EMI of differential signal
US7968469B2 (en) 2007-01-30 2011-06-28 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
US8074677B2 (en) 2007-02-26 2011-12-13 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US7846497B2 (en) 2007-02-26 2010-12-07 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US7775236B2 (en) 2007-02-26 2010-08-17 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US7988813B2 (en) 2007-03-12 2011-08-02 Tokyo Electron Limited Dynamic control of process chemistry for improved within-substrate process uniformity
JP5317424B2 (en) 2007-03-28 2013-10-16 東京エレクトロン株式会社 Plasma processing equipment
JP2008251681A (en) 2007-03-29 2008-10-16 Hitachi High-Technologies Corp Wafer stage
US8062487B2 (en) 2007-06-25 2011-11-22 United Microelectronics Corp. Wafer supporting device of a sputtering apparatus
US8563619B2 (en) 2007-06-28 2013-10-22 Lam Research Corporation Methods and arrangements for plasma processing system with tunable capacitance
US8440157B2 (en) 2007-07-20 2013-05-14 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing cast silicon from seed crystals
US8202393B2 (en) 2007-08-29 2012-06-19 Lam Research Corporation Alternate gas delivery and evacuation system for plasma processing apparatuses
US7832354B2 (en) 2007-09-05 2010-11-16 Applied Materials, Inc. Cathode liner with wafer edge gas injection in a plasma reactor chamber
US8440259B2 (en) 2007-09-05 2013-05-14 Intermolecular, Inc. Vapor based combinatorial processing
US7824146B2 (en) 2007-09-07 2010-11-02 Advanced Technology Development Facility Automated systems and methods for adapting semiconductor fabrication tools to process wafers of different diameters
JP4858395B2 (en) 2007-10-12 2012-01-18 パナソニック株式会社 Plasma processing equipment
JP5459895B2 (en) 2007-10-15 2014-04-02 Ｃｋｄ株式会社 Gas shunt supply unit
KR20110130535A (en) 2007-10-31 2011-12-05 도쿄엘렉트론가부시키가이샤 Plasma Treatment System and Plasma Treatment Method
JP2009123795A (en) 2007-11-13 2009-06-04 Hitachi Kokusai Electric Inc Semiconductor device manufacturing method and substrate processing apparatus
US8191397B2 (en) 2007-12-12 2012-06-05 Air Liquide Electronics U.S. Lp Methods for checking and calibrating concentration sensors in a semiconductor processing chamber
US8137463B2 (en) 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US8999106B2 (en) 2007-12-19 2015-04-07 Applied Materials, Inc. Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
JP5336513B2 (en) 2007-12-27 2013-11-06 ラム リサーチ コーポレーション System and method for dynamic alignment beam calibration
US8037894B1 (en) 2007-12-27 2011-10-18 Intermolecular, Inc. Maintaining flow rate of a fluid
JP4585035B2 (en) 2007-12-27 2010-11-24 株式会社堀場エステック Flow rate ratio controller
WO2009091935A1 (en) 2008-01-18 2009-07-23 Pivotal Systems Corporation Method and apparatus for in situ testing of gas flow controllers
JP2009188173A (en) 2008-02-06 2009-08-20 Tokyo Electron Ltd Substrate processing method and substrate processing apparatus
SG188140A1 (en) 2008-02-08 2013-03-28 Lam Res Corp Adjustable gap capacitively coupled rf plasma reactor including lateral bellows and non-contact particle seal
US7754518B2 (en) 2008-02-15 2010-07-13 Applied Materials, Inc. Millisecond annealing (DSA) edge protection
WO2009107777A1 (en) 2008-02-27 2009-09-03 株式会社 東芝 Moving image encoding/decoding device
US8969151B2 (en) 2008-02-29 2015-03-03 Globalfoundries Singapore Pte. Ltd. Integrated circuit system employing resistance altering techniques
US8110068B2 (en) 2008-03-20 2012-02-07 Novellus Systems, Inc. Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes
CN101978479A (en) 2008-03-21 2011-02-16 应用材料公司 Method and equipment for substrate etching system and process
CN101552182B (en) 2008-03-31 2010-11-03 北京北方微电子基地设备工艺研究中心有限责任公司 Marginal ring mechanism used in semiconductor manufacture technology
US9062379B2 (en) 2008-04-16 2015-06-23 Applied Materials, Inc. Wafer processing deposition shielding components
US20090260982A1 (en) 2008-04-16 2009-10-22 Applied Materials, Inc. Wafer processing deposition shielding components
US8185242B2 (en) 2008-05-07 2012-05-22 Lam Research Corporation Dynamic alignment of wafers using compensation values obtained through a series of wafer movements
RU2011101453A (en) 2008-06-16 2012-07-27 ДжиТи СОЛАР ИНКОРПОРЕЙТЕД (US) SYSTEMS AND METHODS OF GROWING SINGLE CRYSTAL SILICON BARS BY DIRECTIONAL CURING
JP2010034416A (en) 2008-07-30 2010-02-12 Hitachi High-Technologies Corp Plasma processing apparatus and plasma processing method
JP5564043B2 (en) 2008-08-13 2014-07-30 シエル・インターナシヨネイル・リサーチ・マーチヤツピイ・ベー・ウイ Method for controlling the gas flow rate between multiple gas streams
US8089046B2 (en) 2008-09-19 2012-01-03 Applied Materials, Inc. Method and apparatus for calibrating mass flow controllers
KR101592061B1 (en) 2008-10-31 2016-02-04 램 리써치 코포레이션 Lower electrode assembly of plasma processing chamber
US20100122655A1 (en) 2008-11-14 2010-05-20 Tiner Robin L Ball supported shadow frame
KR101644495B1 (en) 2008-11-25 2016-08-01 쿄세라 코포레이션 Wafer heating apparatus, electrostatic chuck, and method for manufacturing wafer heating apparatus
US8809196B2 (en) 2009-01-14 2014-08-19 Tokyo Electron Limited Method of etching a thin film using pressure modulation
JP5216632B2 (en) 2009-03-03 2013-06-19 東京エレクトロン株式会社 Fluid control device
US8291935B1 (en) 2009-04-07 2012-10-23 Novellus Systems, Inc. Flexible gas mixing manifold
JP5071437B2 (en) 2009-05-18 2012-11-14 パナソニック株式会社 Plasma processing apparatus and tray mounting method in plasma processing apparatus
JP2011047930A (en) 2009-07-31 2011-03-10 Tdk Corp Magnetoresistance effect element and sensor
JP5650935B2 (en) 2009-08-07 2015-01-07 東京エレクトロン株式会社 Substrate processing apparatus, positioning method, and focus ring arrangement method
US8409995B2 (en) 2009-08-07 2013-04-02 Tokyo Electron Limited Substrate processing apparatus, positioning method and focus ring installation method
CN102473634B (en) 2009-08-20 2015-02-18 东京毅力科创株式会社 Plasma processing device and plasma processing method
KR101854922B1 (en) 2009-08-31 2018-05-04 램 리써치 코포레이션 Radio frequency (rf) ground return arrangements
CN102550130A (en) 2009-08-31 2012-07-04 朗姆研究公司 A multi-peripheral ring arrangement for performing plasma confinement
KR20120098751A (en) 2009-10-26 2012-09-05 솔베이 플루오르 게엠베하 Etching process for producing a tft matrix
US8270141B2 (en) 2009-11-20 2012-09-18 Applied Materials, Inc. Electrostatic chuck with reduced arcing
DE202010015933U1 (en) * 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont An edge ring arrangement for plasma etching chambers
US20120244715A1 (en) 2009-12-02 2012-09-27 Xactix, Inc. High-selectivity etching system and method
US9127361B2 (en) 2009-12-07 2015-09-08 Mks Instruments, Inc. Methods of and apparatus for controlling pressure in multiple zones of a process tool
JP5650548B2 (en) 2009-12-25 2015-01-07 株式会社堀場エステック Mass flow controller system
US9324572B2 (en) 2010-03-04 2016-04-26 Tokyo Electron Limited Plasma etching method, method for producing semiconductor device, and plasma etching device
JP2011210853A (en) 2010-03-29 2011-10-20 Tokyo Electron Ltd Method for measuring wear rate
US20110265951A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system
US20110265883A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Methods and apparatus for reducing flow splitting errors using orifice ratio conductance control
JP5584517B2 (en) 2010-05-12 2014-09-03 東京エレクトロン株式会社 Plasma processing apparatus and semiconductor device manufacturing method
US8826855B2 (en) 2010-06-30 2014-09-09 Lam Research Corporation C-shaped confinement ring for a plasma processing chamber
US8485128B2 (en) 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
BR112013002632B1 (en) 2010-08-02 2020-01-21 Basell Polyolefine Gmbh process and apparatus for mixing and dividing fluid streams
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
US8742666B2 (en) 2010-08-06 2014-06-03 Lam Research Corporation Radio frequency (RF) power filters and plasma processing systems including RF power filters
JP2012049376A (en) 2010-08-27 2012-03-08 Hitachi High-Technologies Corp Plasma processing apparatus and plasma processing method
JP5654297B2 (en) * 2010-09-14 2015-01-14 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
US8846437B2 (en) 2010-10-01 2014-09-30 Applied Materials, Inc. High efficiency thin film transistor device with gallium arsenide layer
US8633423B2 (en) * 2010-10-14 2014-01-21 Applied Materials, Inc. Methods and apparatus for controlling substrate temperature in a process chamber
US8905074B2 (en) 2010-10-22 2014-12-09 Applied Materials, Inc. Apparatus for controlling gas distribution using orifice ratio conductance control
EP2649218B1 (en) 2010-12-08 2017-08-23 Evatec AG Apparatus and method for depositing a layer onto a substrate
US20120149213A1 (en) 2010-12-09 2012-06-14 Lakshminarayana Nittala Bottom up fill in high aspect ratio trenches
DE102010054875B4 (en) 2010-12-17 2012-10-31 Eagleburgmann Germany Gmbh & Co. Kg Low-friction sliding ring with cost-effective diamond coating
JP5855921B2 (en) 2010-12-17 2016-02-09 株式会社堀場エステック Gas concentration adjustment device
US9303319B2 (en) 2010-12-17 2016-04-05 Veeco Instruments Inc. Gas injection system for chemical vapor deposition using sequenced valves
US9790594B2 (en) 2010-12-28 2017-10-17 Asm Ip Holding B.V. Combination CVD/ALD method, source and pulse profile modification
US8470127B2 (en) 2011-01-06 2013-06-25 Lam Research Corporation Cam-locked showerhead electrode and assembly
JP5719599B2 (en) * 2011-01-07 2015-05-20 東京エレクトロン株式会社 Substrate processing equipment
JP5690596B2 (en) * 2011-01-07 2015-03-25 東京エレクトロン株式会社 Focus ring and substrate processing apparatus having the focus ring
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
WO2012125365A2 (en) 2011-03-15 2012-09-20 Gtat Corporation Automated vision system for a crystal growth apparatus
WO2012134512A1 (en) 2011-03-28 2012-10-04 Applied Materials, Inc. Method and apparatus for the selective deposition of epitaxial germanium stressor alloys
WO2012133585A1 (en) * 2011-03-29 2012-10-04 東京エレクトロン株式会社 Plasma etching device, and plasma etching method
JP6003011B2 (en) 2011-03-31 2016-10-05 東京エレクトロン株式会社 Substrate processing equipment
US9059678B2 (en) 2011-04-28 2015-06-16 Lam Research Corporation TCCT match circuit for plasma etch chambers
US20120280429A1 (en) 2011-05-02 2012-11-08 Gt Solar, Inc. Apparatus and method for producing a multicrystalline material having large grain sizes
US8746284B2 (en) 2011-05-11 2014-06-10 Intermolecular, Inc. Apparatus and method for multiple symmetrical divisional gas distribution
CN105977126B (en) 2011-05-31 2018-12-07 应用材料公司 Hole component for plasma etch chamber
KR101909439B1 (en) 2011-06-06 2018-10-18 지티에이티 코포레이션 Heater assembly for crystal growth apparatus
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
CN103620734B (en) 2011-06-30 2017-02-15 应用材料公司 Methods and apparatus for rapid gas exchange, rapid gas switching, and programmable gas delivery
JP5377587B2 (en) 2011-07-06 2013-12-25 東京エレクトロン株式会社 Antenna, plasma processing apparatus, and plasma processing method
JP5739261B2 (en) 2011-07-28 2015-06-24 株式会社堀場エステック Gas supply system
US8728239B2 (en) 2011-07-29 2014-05-20 Asm America, Inc. Methods and apparatus for a gas panel with constant gas flow
JP5948026B2 (en) 2011-08-17 2016-07-06 東京エレクトロン株式会社 Semiconductor manufacturing apparatus and processing method
US20130045605A1 (en) 2011-08-18 2013-02-21 Applied Materials, Inc. Dry-etch for silicon-and-nitrogen-containing films
US8849466B2 (en) 2011-10-04 2014-09-30 Mks Instruments, Inc. Method of and apparatus for multiple channel flow ratio controller system
US20130104996A1 (en) 2011-10-26 2013-05-02 Applied Materials, Inc. Method for balancing gas flow supplying multiple cvd reactors
US8933628B2 (en) 2011-10-28 2015-01-13 Applied Materials, Inc. Inductively coupled plasma source with phase control
JP5932599B2 (en) 2011-10-31 2016-06-08 株式会社日立ハイテクノロジーズ Plasma etching method
US8671733B2 (en) 2011-12-13 2014-03-18 Intermolecular, Inc. Calibration procedure considering gas solubility
US8988848B2 (en) 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability
US8900469B2 (en) 2011-12-19 2014-12-02 Applied Materials, Inc. Etch rate detection for anti-reflective coating layer and absorber layer etching
JP5973731B2 (en) 2012-01-13 2016-08-23 東京エレクトロン株式会社 Plasma processing apparatus and heater temperature control method
WO2013108750A1 (en) 2012-01-17 2013-07-25 東京エレクトロン株式会社 Substrate mounting table and plasma treatment device
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
JP5905735B2 (en) * 2012-02-21 2016-04-20 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing method, and method for changing settable band of substrate temperature
EP2817616B1 (en) 2012-02-22 2017-05-10 Agilent Technologies, Inc. Mass flow controllers and methods for auto-zeroing flow sensor without shutting off a mass flow controller
JP5881467B2 (en) 2012-02-29 2016-03-09 株式会社フジキン Gas diversion supply apparatus and gas diversion supply method using the same
US9682398B2 (en) 2012-03-30 2017-06-20 Applied Materials, Inc. Substrate processing system having susceptorless substrate support with enhanced substrate heating control
US9301383B2 (en) 2012-03-30 2016-03-29 Tokyo Electron Limited Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus
US20130255784A1 (en) 2012-03-30 2013-10-03 Applied Materials, Inc. Gas delivery systems and methods of use thereof
WO2013162842A1 (en) 2012-04-25 2013-10-31 Applied Materials, Inc. Wafer edge measurement and control
US9948214B2 (en) 2012-04-26 2018-04-17 Applied Materials, Inc. High temperature electrostatic chuck with real-time heat zone regulating capability
KR101390422B1 (en) * 2012-05-07 2014-04-29 주식회사 제우스 Lift pin unit in oven chamber for lcd glass substrate
KR101974420B1 (en) 2012-06-08 2019-05-02 세메스 주식회사 Apparatus and Method for treating substrate
KR101974422B1 (en) 2012-06-27 2019-05-02 세메스 주식회사 Apparatus and Method for treating substrate
US9243325B2 (en) 2012-07-18 2016-01-26 Rohm And Haas Electronic Materials Llc Vapor delivery device, methods of manufacture and methods of use thereof
US9184030B2 (en) 2012-07-19 2015-11-10 Lam Research Corporation Edge exclusion control with adjustable plasma exclusion zone ring
DE102012106796A1 (en) * 2012-07-26 2014-01-30 Aixtron Se Device useful for thermal treatment of a semiconductor substrate, comprises susceptor, which forms the base of a process chamber and comprises substrate support base, substrate support ring and heat source
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US8865602B2 (en) 2012-09-28 2014-10-21 Applied Materials, Inc. Edge ring lip
KR102207992B1 (en) 2012-10-23 2021-01-26 램 리써치 코포레이션 Sub-saturated atomic layer deposition and conformal film deposition
JP5616416B2 (en) 2012-11-02 2014-10-29 株式会社フジキン Integrated gas supply device
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US20140144471A1 (en) 2012-11-28 2014-05-29 Intermolecular, Inc. Contamination Control, Rinsing, and Purging Methods to Extend the Life of Components within Combinatorial Processing Systems
US9090972B2 (en) 2012-12-31 2015-07-28 Lam Research Corporation Gas supply systems for substrate processing chambers and methods therefor
US9997381B2 (en) 2013-02-18 2018-06-12 Lam Research Corporation Hybrid edge ring for plasma wafer processing
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
JP6473131B2 (en) 2013-03-12 2019-02-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Multi-zone gas injection assembly with azimuthal and radial distribution control
US9337002B2 (en) 2013-03-12 2016-05-10 Lam Research Corporation Corrosion resistant aluminum coating on plasma chamber components
US20140273460A1 (en) 2013-03-13 2014-09-18 Applied Materials, Inc. Passive control for through silicon via tilt in icp chamber
US9472443B2 (en) 2013-03-14 2016-10-18 Applied Materials, Inc. Selectively groundable cover ring for substrate process chambers
US9425077B2 (en) 2013-03-15 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor apparatus with transportable edge ring for substrate transport
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9224583B2 (en) 2013-03-15 2015-12-29 Lam Research Corporation System and method for heating plasma exposed surfaces
WO2014145360A1 (en) 2013-03-15 2014-09-18 Nanonex Corporation Imprint lithography system and method for manufacturing
KR20140132542A (en) 2013-05-08 2014-11-18 주식회사 미코 Ceramic heater and method for manufacturing the same
US20160099162A1 (en) 2013-06-26 2016-04-07 Applied Materials, Inc. Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber
FR3008266B1 (en) 2013-07-03 2015-08-07 Commissariat Energie Atomique METHOD AND SYSTEM FOR MULTIPLE ACCESS WITH FREQUENTIAL MULTIPLEXING OF DATA SENDER AUTHORIZATION REQUESTS
US20150010381A1 (en) 2013-07-08 2015-01-08 United Microelectronics Corp. Wafer processing chamber and method for transferring wafer in the same
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
US20150020848A1 (en) 2013-07-19 2015-01-22 Lam Research Corporation Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning
CN107516626B (en) 2013-07-19 2021-03-26 朗姆研究公司 System and method for in-situ wafer edge and backside plasma cleaning
US9816506B2 (en) 2013-07-31 2017-11-14 Trane International Inc. Intermediate oil separator for improved performance in a scroll compressor
US9123661B2 (en) 2013-08-07 2015-09-01 Lam Research Corporation Silicon containing confinement ring for plasma processing apparatus and method of forming thereof
JP6193679B2 (en) 2013-08-30 2017-09-06 株式会社フジキン Gas diversion supply apparatus and gas diversion supply method
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US10937634B2 (en) 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
CN103730318B (en) 2013-11-15 2016-04-06 中微半导体设备(上海)有限公司 A kind of method of crystal round fringes guard ring and minimizing crystal round fringes particle
US10804081B2 (en) * 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
WO2015099892A1 (en) 2013-12-23 2015-07-02 Applied Materials, Inc. Extreme edge and skew control in icp plasma reactor
US20150184287A1 (en) 2013-12-26 2015-07-02 Intermolecular, Inc. Systems and Methods for Parallel Combinatorial Vapor Deposition Processing
CN104752141B (en) 2013-12-31 2017-02-08 中微半导体设备(上海)有限公司 Plasma processing device and operating method thereof
CN104851832B (en) 2014-02-18 2018-01-19 北京北方华创微电子装备有限公司 A kind of fixing device, reaction chamber and plasma processing device
JP6218650B2 (en) 2014-03-11 2017-10-25 東京エレクトロン株式会社 Plasma processing equipment
US9580360B2 (en) 2014-04-07 2017-02-28 Lam Research Corporation Monolithic ceramic component of gas delivery system and method of making and use thereof
JP6204869B2 (en) 2014-04-09 2017-09-27 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
US20150340209A1 (en) 2014-05-20 2015-11-26 Micron Technology, Inc. Focus ring replacement method for a plasma reactor, and associated systems and methods
US9026244B1 (en) 2014-05-22 2015-05-05 Applied Materials, Inc. Presence sensing and position correction for wafer on a carrier ring
US9034771B1 (en) 2014-05-23 2015-05-19 Applied Materials, Inc. Cooling pedestal for dicing tape thermal management during plasma dicing
US9318343B2 (en) 2014-06-11 2016-04-19 Tokyo Electron Limited Method to improve etch selectivity during silicon nitride spacer etch
JP6442296B2 (en) 2014-06-24 2018-12-19 東京エレクトロン株式会社 Mounting table and plasma processing apparatus
CN105336561B (en) 2014-07-18 2017-07-21 中微半导体设备(上海)有限公司 Plasma etching apparatus
JP5767373B2 (en) 2014-07-29 2015-08-19 東京エレクトロン株式会社 Plasma processing apparatus, plasma processing method, and storage medium for storing program for implementing the same
KR20160015510A (en) * 2014-07-30 2016-02-15 삼성전자주식회사 Electrostatic chuck assemblies, semiconducotor fabricating apparatus having the same, and plasma treatment methods using the same
JP2016046451A (en) * 2014-08-26 2016-04-04 株式会社アルバック Substrate processing apparatus and substrate processing method
CN107148661B (en) 2014-10-17 2019-10-18 朗姆研究公司 Gas supply delivery device including gas flow divider for adjustable gas flow control
US10242848B2 (en) 2014-12-12 2019-03-26 Lam Research Corporation Carrier ring structure and chamber systems including the same
US20160181116A1 (en) 2014-12-18 2016-06-23 Lam Research Corporation Selective nitride etch
US9865437B2 (en) 2014-12-30 2018-01-09 Applied Materials, Inc. High conductance process kit
CN107112265B (en) 2015-01-09 2020-12-04 应用材料公司 Substrate transfer mechanism
US20170263478A1 (en) * 2015-01-16 2017-09-14 Lam Research Corporation Detection System for Tunable/Replaceable Edge Coupling Ring
US11605546B2 (en) 2015-01-16 2023-03-14 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10658222B2 (en) * 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
TW201634738A (en) 2015-01-22 2016-10-01 應用材料股份有限公司 Improved injector for spatially separated atomic layer deposition chamber
US9911620B2 (en) 2015-02-23 2018-03-06 Lam Research Corporation Method for achieving ultra-high selectivity while etching silicon nitride
US9966270B2 (en) 2015-03-31 2018-05-08 Lam Research Corporation Gas reaction trajectory control through tunable plasma dissociation for wafer by-product distribution and etch feature profile uniformity
US10957561B2 (en) 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US10153136B2 (en) 2015-08-04 2018-12-11 Lam Research Corporation Hollow RF feed with coaxial DC power feed
US9499289B1 (en) 2015-08-14 2016-11-22 Extreme Packaging Machinery, Inc. Film edge sealing device
KR101805552B1 (en) 2015-08-31 2017-12-08 엘지디스플레이 주식회사 Organic Light Emitting Diode Display Device
US10879041B2 (en) 2015-09-04 2020-12-29 Applied Materials, Inc. Method and apparatus of achieving high input impedance without using ferrite materials for RF filter applications in plasma chambers
US9837286B2 (en) 2015-09-04 2017-12-05 Lam Research Corporation Systems and methods for selectively etching tungsten in a downstream reactor
JP6541565B2 (en) * 2015-09-25 2019-07-10 東京エレクトロン株式会社 Mounting table and plasma processing apparatus
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US10044338B2 (en) 2015-10-15 2018-08-07 Lam Research Corporation Mutually induced filters
US20170115657A1 (en) 2015-10-22 2017-04-27 Lam Research Corporation Systems for Removing and Replacing Consumable Parts from a Semiconductor Process Module in Situ
TWI725067B (en) * 2015-10-28 2021-04-21 美商應用材料股份有限公司 Rotatable electrostatic chuck
US10985078B2 (en) * 2015-11-06 2021-04-20 Lam Research Corporation Sensor and adjuster for a consumable
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
JP6888007B2 (en) 2016-01-26 2021-06-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Wafer edge ring lifting solution
WO2017131927A1 (en) * 2016-01-26 2017-08-03 Applied Materials, Inc. Wafer edge ring lifting solution
US9640409B1 (en) 2016-02-02 2017-05-02 Lam Research Corporation Self-limited planarization of hardmask
DE102016202071A1 (en) 2016-02-11 2017-08-17 Siemens Aktiengesellschaft Electrical conductor for an electric machine with increased power-to-weight ratio and electrical component for the electric machine
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
CN107093569B (en) 2016-02-18 2019-07-05 北京北方华创微电子装备有限公司 A kind of wafer locating device and reaction chamber
JP7098273B2 (en) 2016-03-04 2022-07-11 アプライド マテリアルズ インコーポレイテッド Universal process kit
JP6896754B2 (en) 2016-03-05 2021-06-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Methods and equipment for controlling ion fractionation in the physical vapor deposition process
US20170278679A1 (en) 2016-03-24 2017-09-28 Lam Research Corporation Method and apparatus for controlling process within wafer uniformity
US10312121B2 (en) 2016-03-29 2019-06-04 Lam Research Corporation Systems and methods for aligning measurement device in substrate processing systems
US11011353B2 (en) 2016-03-29 2021-05-18 Lam Research Corporation Systems and methods for performing edge ring characterization
WO2017196540A1 (en) 2016-05-13 2017-11-16 Applied Materials, Inc. Sensor based auto-calibration wafer
DE102016212780A1 (en) 2016-07-13 2018-01-18 Siltronic Ag Device for handling a semiconductor wafer in an epitaxial reactor and method for producing a semiconductor wafer with an epitaxial layer
JP6635888B2 (en) 2016-07-14 2020-01-29 東京エレクトロン株式会社 Plasma processing system
US10096471B2 (en) 2016-08-04 2018-10-09 Lam Research Corporation Partial net shape and partial near net shape silicon carbide chemical vapor deposition
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
US10921251B2 (en) 2016-08-22 2021-02-16 Applied Materials, Inc. Chamber component part wear indicator and a system for detecting part wear
US10262887B2 (en) * 2016-10-20 2019-04-16 Lam Research Corporation Pin lifter assembly with small gap
US10541168B2 (en) * 2016-11-14 2020-01-21 Lam Research Corporation Edge ring centering method using ring dynamic alignment data
US10510516B2 (en) 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Moving focus ring for plasma etcher
JP6812224B2 (en) 2016-12-08 2021-01-13 東京エレクトロン株式会社 Board processing equipment and mounting table
US10910195B2 (en) 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
US10553404B2 (en) 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US11404249B2 (en) 2017-03-22 2022-08-02 Tokyo Electron Limited Substrate processing apparatus
US10504738B2 (en) 2017-05-31 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Focus ring for plasma etcher
KR101927936B1 (en) 2017-06-09 2018-12-11 세메스 주식회사 Substrate treating apparatus
CN113707530B (en) * 2017-07-24 2024-07-30 朗姆研究公司 Removable edge ring design
SG11201907515WA (en) * 2017-11-21 2019-09-27 Lam Res Corp Bottom and middle edge rings
US11387134B2 (en) 2018-01-19 2022-07-12 Applied Materials, Inc. Process kit for a substrate support
US10591934B2 (en) 2018-03-09 2020-03-17 Lam Research Corporation Mass flow controller for substrate processing
US10790123B2 (en) 2018-05-28 2020-09-29 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11093605B2 (en) 2018-06-28 2021-08-17 Cisco Technology, Inc. Monitoring real-time processor instruction stream execution
US10760944B2 (en) 2018-08-07 2020-09-01 Lam Research Corporation Hybrid flow metrology for improved chamber matching
US11798789B2 (en) 2018-08-13 2023-10-24 Lam Research Corporation Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features
JP7115942B2 (en) 2018-09-06 2022-08-09 東京エレクトロン株式会社 PLACE, SUBSTRATE PROCESSING APPARATUS, EDGE RING AND TRANSFER METHOD OF EDGE RING
KR102904924B1 (en) 2019-03-06 2025-12-26 램 리써치 코포레이션 Measuring system for measuring the thickness of an adjustable edge ring for a substrate processing system
JP2020155489A (en) * 2019-03-18 2020-09-24 キオクシア株式会社 Semiconductor manufacturing equipment and manufacturing method of semiconductor equipment
TWM593655U (en) 2019-05-10 2020-04-11 美商蘭姆研究公司 Central ring of semiconductor process modules
US12142466B2 (en) 2019-06-06 2024-11-12 Lam Research Corporation Automated transfer of edge ring requiring rotational alignment
TWM602283U (en) 2019-08-05 2020-10-01 美商蘭姆研究公司 Edge ring with lift pin grooves for a substrate processing system
CN114223054A (en) 2019-08-14 2022-03-22 朗姆研究公司 Movable edge ring for substrate processing system
US11823937B2 (en) 2019-08-19 2023-11-21 Applied Materials, Inc. Calibration of an aligner station of a processing system
JP2021040011A (en) 2019-09-02 2021-03-11 キオクシア株式会社 Plasma processing apparatus
US11443923B2 (en) 2019-09-25 2022-09-13 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus for fabricating a semiconductor structure and method of fabricating a semiconductor structure
KR102747645B1 (en) 2019-10-10 2024-12-27 삼성전자주식회사 Electro-static chuck and substrate processing apparatus including the same
JP7715721B2 (en) 2020-02-19 2025-07-30 ラム リサーチ コーポレーション Method for conditioning components of a semiconductor processing chamber - Patents.com
US11759954B2 (en) 2020-03-17 2023-09-19 Applied Materials, Inc. Calibration of an electronics processing system
US12444579B2 (en) 2020-03-23 2025-10-14 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
KR20230079226A (en) 2020-10-05 2023-06-05 램 리써치 코포레이션 Movable Edge Rings for Plasma Processing Systems

Also Published As

Publication number Publication date
JP6878616B2 (en) 2021-05-26
US20220189745A1 (en) 2022-06-16
EP4102551A1 (en) 2022-12-14
EP3566245A1 (en) 2019-11-13
JP2025111754A (en) 2025-07-30
JP7220251B2 (en) 2023-02-09
CN118380374A (en) 2024-07-23
KR102254224B1 (en) 2021-05-20
JP7678188B2 (en) 2025-05-15
EP3566245B1 (en) 2021-03-17
CN118380375A (en) 2024-07-23
JP2020512701A (en) 2020-04-23
JP2023055808A (en) 2023-04-18
KR20190068490A (en) 2019-06-18
EP3843129B1 (en) 2022-09-14
KR102617972B1 (en) 2023-12-22
KR20220073858A (en) 2022-06-03
CN118380373A (en) 2024-07-23
US20220189744A1 (en) 2022-06-16
CN118380371A (en) 2024-07-23
KR102143290B1 (en) 2020-08-11
US12183554B2 (en) 2024-12-31
KR20250171443A (en) 2025-12-08
CN118380372A (en) 2024-07-23
KR20200020991A (en) 2020-02-26
JP2024105438A (en) 2024-08-06
US20200312633A1 (en) 2020-10-01
EP3843129A1 (en) 2021-06-30
KR102182298B1 (en) 2020-11-25
CN110383454B (en) 2024-03-26
EP3566245A4 (en) 2020-03-11
KR20200054330A (en) 2020-05-19
KR102891545B1 (en) 2025-11-25
WO2019103722A1 (en) 2019-05-31
KR20230175352A (en) 2023-12-29
JP2021119625A (en) 2021-08-12
JP7487360B2 (en) 2024-05-20
KR20210059797A (en) 2021-05-25
US20250132135A1 (en) 2025-04-24
CN110383454A (en) 2019-10-25
KR102401722B1 (en) 2022-05-24
US12237154B2 (en) 2025-02-25

Similar Documents

Publication Publication Date Title
SG11201907515WA (en) Bottom and middle edge rings
SG11201900399WA (en) Method and apparatus for performing access barring check
SG11201407534PA (en) New diazaspirocycloalkane and azaspirocycloalkane
SG11201908401SA (en) Sharing of long-term evolution (lte) uplink spectrum
SG11201907857RA (en) Edible and biodegradable utensils
SG11201907928UA (en) Spatial-division multiple access (sdma) across multiple operators
SG11201804599VA (en) Methods and apparatus for selecting enhanced distributed channel access parameters for different stations
SG11201908194YA (en) Synchronization signal block designs for wireless communication
SG11201804758QA (en) Aqueous pharmaceutical formulation comprising anti-pd-1 antibody avelumab
SG11201906235YA (en) Narrowband time-division duplex frame structure for narrowband communications
SG11201810174UA (en) Methods and apparatus for managing interference across operators
SG11201805320XA (en) Materials and methods for treatment of amyotrophic lateral sclerosis and/or frontal temporal lobular degeneration
SG11201407417VA (en) Encoding and reconstruction of residual data based on support information
SG11201407486PA (en) Compositions and methods for modulating utrn expression
SG11201908127WA (en) Method for producing multispecific antibodies
SG11201805709RA (en) Anti-pro/latent myostatin antibodies and methods of use thereof
SG11201809499UA (en) Processes for preparing phosphorodiamidate morpholino oligomers
SG11201807041PA (en) Improved preparations of adult liver progenitor cells
SG11201408383SA (en) Methods of detecting diseases or conditions using circulating diseased cells
SG11201408198QA (en) Jumper tube locking assembly and method
SG11201407324UA (en) Handling tracking area update reject without extended delay
SG11202000333UA (en) Bicyclic ketone compounds and methods of use thereof
SG11201805311XA (en) Method of treating a mammal, including human, against cancer using methionine and asparagine depletion
SG11201806967TA (en) Method and apparatus for selecting network slices and services
SG11201903595TA (en) Modular construction system