[go: up one dir, main page]

SG11201900068PA - Single crystal silicon plate-shaped body and production method therefor - Google Patents

Single crystal silicon plate-shaped body and production method therefor

Info

Publication number
SG11201900068PA
SG11201900068PA SG11201900068PA SG11201900068PA SG11201900068PA SG 11201900068P A SG11201900068P A SG 11201900068PA SG 11201900068P A SG11201900068P A SG 11201900068PA SG 11201900068P A SG11201900068P A SG 11201900068PA SG 11201900068P A SG11201900068P A SG 11201900068PA
Authority
SG
Singapore
Prior art keywords
single crystal
crystal silicon
shaped body
silicon plate
ppma
Prior art date
Application number
SG11201900068PA
Inventor
Isao Masada
Shoji Tachibana
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of SG11201900068PA publication Critical patent/SG11201900068PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/64—Flat crystals, e.g. plates, strips or discs
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

SINGLE CRYSTAL SILICON PLATE-SHAPED BODY AND PRODUCTION METHOD THEREFOR An object of the invention is to develop a single crystal silicon that becomes such a high-performance device as a solar cell or a power device in which decrease in lifetime is suppressed even if heating treatment from 800°C to 1100°C performed in a device production process is applied in a single crystal silicon plate-shaped body having a high oxygen concentration. Provided is a single crystal silicon plate-shaped body as cut out from an upper portion of a straight body portion of a CZ method single crystal silicon ingot in which an interstitial oxygen concentration in a crystal is 25 ppma to 45 ppma and a substitutional carbon concentration is 0.5 ppma or less in a radial center, wherein in the radial center, oxygen precipitates are not observed in a bulk in an image of 200,000 times by means of a transmission electron microscope, and after heating the single crystal silicon plate-shaped body at 950°C for 60 minutes, oxygen precipitates are observed in an image of the 200,000 times, and a shape of the oxygen precipitates is observed in a polyhedral structure in an image of 2,000,000 times. (Fig.1)
SG11201900068PA 2016-07-06 2017-06-30 Single crystal silicon plate-shaped body and production method therefor SG11201900068PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016134375 2016-07-06
PCT/JP2017/024235 WO2018008561A1 (en) 2016-07-06 2017-06-30 Single crystal silicon plate-shaped body and production method therefor

Publications (1)

Publication Number Publication Date
SG11201900068PA true SG11201900068PA (en) 2019-02-27

Family

ID=60912812

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201900068PA SG11201900068PA (en) 2016-07-06 2017-06-30 Single crystal silicon plate-shaped body and production method therefor

Country Status (8)

Country Link
US (1) US10975496B2 (en)
JP (1) JP6484762B2 (en)
KR (1) KR102032535B1 (en)
CN (1) CN109477240B (en)
DE (1) DE112017003436T5 (en)
SG (1) SG11201900068PA (en)
TW (1) TWI732898B (en)
WO (1) WO2018008561A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6645545B1 (en) * 2018-09-03 2020-02-14 株式会社Sumco Method for evaluating carbon concentration of silicon sample, method for evaluating silicon wafer manufacturing process, method for manufacturing silicon wafer, and method for manufacturing silicon single crystal ingot
JP6979007B2 (en) * 2018-12-17 2021-12-08 グローバルウェーハズ・ジャパン株式会社 Ultra-low oxygen concentration measurement method for silicon wafers
AU2020329758A1 (en) 2019-08-09 2022-02-17 Leading Edge Equipment Technologies, Inc. Wafer with regions of low oxygen concentration
EP4010519A4 (en) 2019-08-09 2023-09-13 Leading Edge Equipment Technologies, Inc. PRODUCING A TAPE OR WAFER WITH AREAS OF LOW OXYGEN CONCENTRATION
US20240018689A1 (en) * 2021-09-28 2024-01-18 Xi’An Eswin Material Technology Co., Ltd. Crystal Puller for Pulling Monocrystalline Silicon Ingots
CN115148858B (en) * 2022-08-01 2024-06-11 安徽华晟新能源科技有限公司 Passivation method of silicon solar cell
US20240068122A1 (en) * 2022-08-29 2024-02-29 Globalwafers Co., Ltd. Axial positioning of magnetic poles while producing a silicon ingot

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03133121A (en) * 1989-10-19 1991-06-06 Showa Denko Kk Silicon substrate for semiconductor device and manufacture thereof
JPH0789789A (en) * 1993-09-20 1995-04-04 Fujitsu Ltd Si crystal, crystal growth method and crystal growth apparatus
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
JP3006669B2 (en) 1995-06-20 2000-02-07 信越半導体株式会社 Method and apparatus for producing silicon single crystal having uniform crystal defects
JPH09190954A (en) 1996-01-10 1997-07-22 Sumitomo Sitix Corp Semiconductor substrate and method of manufacturing the same
KR100351532B1 (en) * 1996-07-29 2002-09-11 스미토모 긴조쿠 고교 가부시키가이샤 Silicon epitaxial wafer and method for manufacturing the same
US6503594B2 (en) 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
JPH1143393A (en) * 1997-07-23 1999-02-16 Nippon Steel Corp Silicon single crystal wafer and method of manufacturing the same
JP4112654B2 (en) * 1997-09-19 2008-07-02 シルトロニック・ジャパン株式会社 Method for manufacturing silicon wafer
US6328795B2 (en) 1998-06-26 2001-12-11 Memc Electronic Materials, Inc. Process for growth of defect free silicon crystals of arbitrarily large diameters
TW505710B (en) * 1998-11-20 2002-10-11 Komatsu Denshi Kinzoku Kk Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
WO2000055397A1 (en) * 1999-03-16 2000-09-21 Shin-Etsu Handotai Co., Ltd. Production method for silicon wafer and silicon wafer
JP2002043318A (en) * 2000-07-28 2002-02-08 Shin Etsu Handotai Co Ltd Method for manufacturing silicon single crystal wafer
JP2002184779A (en) * 2000-12-13 2002-06-28 Shin Etsu Handotai Co Ltd Annealed wafer and method of manufacturing the same
US6846539B2 (en) * 2001-01-26 2005-01-25 Memc Electronic Materials, Inc. Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
EP1456875A2 (en) 2001-12-21 2004-09-15 MEMC Electronic Materials, Inc. Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same
US7201800B2 (en) * 2001-12-21 2007-04-10 Memc Electronic Materials, Inc. Process for making silicon wafers with stabilized oxygen precipitate nucleation centers
WO2003088346A1 (en) * 2002-04-10 2003-10-23 Memc Electronic Materials, Inc. Process for controlling denuded zone depth in an ideal oxygen precipitating silicon wafer
KR100573473B1 (en) 2004-05-10 2006-04-24 주식회사 실트론 Silicon Wafer and Manufacturing Method Thereof
US7700394B2 (en) * 2004-06-30 2010-04-20 Sumco Corporation Method for manufacturing silicon wafer method
CN1269186C (en) * 2004-11-22 2006-08-09 浙江大学 Carbon doped silicon sheet with internal impurity absorbing function and production thereof
KR100939299B1 (en) * 2005-07-27 2010-01-28 가부시키가이샤 사무코 Silicon Wafer and Manufacturing Method Thereof
JP2007194232A (en) * 2006-01-17 2007-08-02 Shin Etsu Handotai Co Ltd Process for producing silicon single crystal wafer
JP5151777B2 (en) * 2008-07-30 2013-02-27 株式会社Ｓｕｍｃｏ Method for manufacturing silicon epitaxial wafer and silicon epitaxial wafer
KR20100036155A (en) * 2008-09-29 2010-04-07 매그나칩 반도체 유한회사 Silicon wafer and fabrication method thereof
JP5088338B2 (en) * 2009-03-10 2012-12-05 信越半導体株式会社 Method of pulling silicon single crystal
JP2011228459A (en) 2010-04-19 2011-11-10 Sumco Corp Silicon wafer and method of manufacturing the same
JP5984448B2 (en) * 2012-03-26 2016-09-06 グローバルウェーハズ・ジャパン株式会社 Silicon wafer
JP5885305B2 (en) * 2013-08-07 2016-03-15 グローバルウェーハズ・ジャパン株式会社 Silicon wafer and manufacturing method thereof
CN104726931A (en) * 2015-03-30 2015-06-24 江苏盎华光伏工程技术研究中心有限公司 Single crystal furnace with annealing device and control method for single crystal furnace

Also Published As

Publication number Publication date
TW201816201A (en) 2018-05-01
TWI732898B (en) 2021-07-11
CN109477240B (en) 2019-12-27
DE112017003436T5 (en) 2019-03-21
CN109477240A (en) 2019-03-15
JP6484762B2 (en) 2019-03-13
KR20190007502A (en) 2019-01-22
KR102032535B1 (en) 2019-10-15
US20190161888A1 (en) 2019-05-30
WO2018008561A1 (en) 2018-01-11
US10975496B2 (en) 2021-04-13
JPWO2018008561A1 (en) 2018-11-29

Similar Documents

Publication Publication Date Title
SG11201900068PA (en) Single crystal silicon plate-shaped body and production method therefor
MY199526A (en) Solid body division by conversion of substances
JP2010056543A5 (en)
MY195790A (en) Wafer Producing Method and Wafer Producing Apparatus
EP4292702A3 (en) Manufacturing apparatus and method for making silicon nanowires on carbon based powders for use in batteries
WO2012019103A8 (en) System and apparatus for cell treatment
GB201010237D0 (en) Methods and apparatuses
WO2014190165A3 (en) Methods for producing low oxygen silicon ingots
TN2017000124A1 (en) Method for removing iron in the manufacture of phosphoric acid
MX2013001008A (en) Method of producing a light emitting device.
SG11201804874WA (en) Semiconductor wafer made of single-crystal silicon and process for the production thereof
MX2017008717A (en) Methods for thermally treating glass articles.
WO2009025337A1 (en) Silicon single crystal wafer for igbt, process for producing silicon single crystal wafer for igbt, and method for ensuring electric resistivity of silicon single crystal wafer for igbt
MY183935A (en) Solar cell production method and solar cell treatment method
SG195154A1 (en) Method for producing gaas single crystal and gaas single crystal wafer
WO2014107818A3 (en) Storage device for storing and/or for transporting objects from the site of production of electronic components
WO2014140901A3 (en) Directional solidification system and method
TW201614757A (en) Film forming method and film forming apparatus
MY178268A (en) Polycrystalline silicon rod pair and method for producing polycrystalline silicon
PH12014502089A1 (en) Gaseous ozone (o3) treatment for solar cell fabrication
MY187928A (en) Process for producing silicon single crystal
SG10201810200QA (en) Manufacture of optical elements by replication and corresponding replication tools and optical devices
EP3520883A4 (en) MODULE FOR CONCENTRATING INCUBATED WAFERS AND METHOD FOR PRODUCING WAFER PREPARATION USING THE SAME
MY153832A (en) Method for producing a multiplicity of semiconductor wafers by processing a single crystal
WO2018163726A1 (en) Method for measuring carbon concentration in monocrystalline silicon