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SG11201808114VA - Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium - Google Patents

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

Info

Publication number
SG11201808114VA
SG11201808114VA SG11201808114VA SG11201808114VA SG11201808114VA SG 11201808114V A SG11201808114V A SG 11201808114VA SG 11201808114V A SG11201808114V A SG 11201808114VA SG 11201808114V A SG11201808114V A SG 11201808114VA SG 11201808114V A SG11201808114V A SG 11201808114VA
Authority
SG
Singapore
Prior art keywords
supply
processing apparatus
substrate processing
semiconductor device
recording medium
Prior art date
Application number
SG11201808114VA
Inventor
Takeo Hanashima
Tsukasa Kamakura
Takafumi Sasaki
Hidenari Yoshida
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Publication of SG11201808114VA publication Critical patent/SG11201808114VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

[Problem] To provide a technique to improve inter-plane uniformity. [Solution] A substrate processing apparatus is provided with: a process chamber that internally houses a substrate support for supporting a plurality of substrates in a multiple stages and processes the substrates; a supply buffer part adjacent to the process chamber; a precursor gas supply part installed in the supply buffer part; and a reaction gas supply part installed in the supply buffer part. The precursor gas supply part is configured to supply a precursor gas from a position equal to or lower than a height of the substrate at a lowermost end of the substrate support into the supply buffer part. FIGURE 1
SG11201808114VA 2016-03-28 2016-03-28 Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium SG11201808114VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2016/059909 WO2017168513A1 (en) 2016-03-28 2016-03-28 Substrate processing device, semiconductor device manufacturing method, and recording medium

Publications (1)

Publication Number Publication Date
SG11201808114VA true SG11201808114VA (en) 2018-10-30

Family

ID=59963673

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201808114VA SG11201808114VA (en) 2016-03-28 2016-03-28 Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

Country Status (6)

Country Link
US (1) US10808318B2 (en)
JP (1) JP6548349B2 (en)
KR (1) KR102126146B1 (en)
CN (1) CN108780751B (en)
SG (1) SG11201808114VA (en)
WO (1) WO2017168513A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102138985B1 (en) * 2015-09-04 2020-07-28 가부시키가이샤 코쿠사이 엘렉트릭 Method for manufacturing reaction tube, substrate processing device, and semiconductor device
JP6462161B2 (en) 2016-02-09 2019-01-30 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing apparatus and semiconductor device manufacturing method
SG11201808114VA (en) * 2016-03-28 2018-10-30 Kokusai Electric Corp Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
KR101910085B1 (en) * 2017-06-08 2018-10-22 주식회사 유진테크 Apparatus for processing substrate
JP6820816B2 (en) * 2017-09-26 2021-01-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing equipment, reaction tubes, semiconductor equipment manufacturing methods, and programs
JP7012563B2 (en) * 2018-03-05 2022-01-28 東京エレクトロン株式会社 Film formation method and film formation equipment
US12233433B2 (en) * 2018-04-27 2025-02-25 Raytheon Company Uniform thin film deposition for poly-p-xylylene
KR102501650B1 (en) * 2018-08-03 2023-02-21 가부시키가이샤 코쿠사이 엘렉트릭 Substrate processing apparatus and method of manufacturing semiconductor device
JP6920262B2 (en) * 2018-09-20 2021-08-18 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Semiconductor device manufacturing methods, board processing methods, board processing devices, and programs
KR102782608B1 (en) * 2019-10-14 2025-03-14 삼성전자주식회사 Semiconductor manufacturing apparatus
US11688621B2 (en) * 2020-12-10 2023-06-27 Yield Engineering Systems, Inc. Batch processing oven and operating methods
US20230117184A1 (en) * 2021-10-20 2023-04-20 Yield Engineering Systems, Inc. Batch processing oven for magnetic anneal

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4086146B2 (en) * 2002-03-26 2008-05-14 株式会社日立国際電気 Semiconductor device manufacturing method and substrate processing apparatus
US20060124058A1 (en) 2002-11-11 2006-06-15 Hitachi Kokusai Electric Inc. Substrate processing device
JP5237133B2 (en) * 2008-02-20 2013-07-17 株式会社日立国際電気 Substrate processing equipment
JP5247528B2 (en) * 2009-02-23 2013-07-24 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, substrate processing method, and gas introducing means
JP2010287877A (en) * 2009-05-11 2010-12-24 Hitachi Kokusai Electric Inc Heat treatment apparatus and heat treatment method
JP2011071414A (en) * 2009-09-28 2011-04-07 Hitachi Kokusai Electric Inc Substrate processing apparatus and method of manufacturing semiconductor device
JP2011187536A (en) * 2010-03-05 2011-09-22 Hitachi Kokusai Electric Inc Substrate processing device
JP2011249407A (en) 2010-05-24 2011-12-08 Hitachi Kokusai Electric Inc Substrate processing apparatus
WO2012011423A1 (en) * 2010-07-22 2012-01-26 株式会社日立国際電気 Device for treating substrate and method for producing semiconductor device
JP2012059997A (en) * 2010-09-10 2012-03-22 Hitachi Kokusai Electric Inc Semiconductor device manufacturing method and substrate processing apparatus
JP2013045884A (en) * 2011-08-24 2013-03-04 Hitachi Kokusai Electric Inc Substrate processing apparatus
KR101740616B1 (en) * 2012-11-26 2017-05-26 가부시키가이샤 히다치 고쿠사이 덴키 Method for manufacturing semiconductor device, substrate processing device, and recording medium
WO2014123028A1 (en) * 2013-02-05 2014-08-14 株式会社日立国際電気 Cleaning method
JP6047228B2 (en) * 2013-03-15 2016-12-21 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, and program
JP6230809B2 (en) * 2013-04-22 2017-11-15 株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing apparatus, and program
JP5859586B2 (en) * 2013-12-27 2016-02-10 株式会社日立国際電気 Substrate processing system, semiconductor device manufacturing method, and recording medium
JP5859583B2 (en) * 2014-01-30 2016-02-10 株式会社日立国際電気 Substrate processing apparatus and semiconductor device manufacturing method
JP2015185579A (en) * 2014-03-20 2015-10-22 株式会社日立国際電気 Substrate processing apparatus, substrate holder, substrate holder, and method for manufacturing semiconductor device
JP5800964B1 (en) * 2014-07-22 2015-10-28 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, and recording medium
JP5840268B1 (en) * 2014-08-25 2016-01-06 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, and recording medium
KR101949060B1 (en) * 2014-09-30 2019-05-20 가부시키가이샤 코쿠사이 엘렉트릭 Substrate processing device, manufacturing method for semiconductor device, and reaction tube
WO2017056241A1 (en) * 2015-09-30 2017-04-06 株式会社日立国際電気 Substrate processing system, file management method of substrate processing device, and program
SG11201808114VA (en) * 2016-03-28 2018-10-30 Kokusai Electric Corp Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
JP6550029B2 (en) * 2016-09-28 2019-07-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing apparatus, nozzle base and method of manufacturing semiconductor device
KR102238585B1 (en) * 2017-02-15 2021-04-09 가부시키가이샤 코쿠사이 엘렉트릭 Substrate processing device, reaction tube, manufacturing method and program of semiconductor device
JP6820816B2 (en) * 2017-09-26 2021-01-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing equipment, reaction tubes, semiconductor equipment manufacturing methods, and programs
CN109950187B (en) * 2017-12-20 2024-04-12 株式会社国际电气 Substrate processing device, method for manufacturing semiconductor device, and recording medium

Also Published As

Publication number Publication date
CN108780751B (en) 2022-12-16
KR20180114925A (en) 2018-10-19
JPWO2017168513A1 (en) 2018-11-29
US10808318B2 (en) 2020-10-20
KR102126146B1 (en) 2020-06-23
CN108780751A (en) 2018-11-09
JP6548349B2 (en) 2019-07-24
WO2017168513A1 (en) 2017-10-05
US20190017169A1 (en) 2019-01-17

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