SG11201706660WA - Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin - Google Patents
Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resinInfo
- Publication number
- SG11201706660WA SG11201706660WA SG11201706660WA SG11201706660WA SG11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA SG 11201706660W A SG11201706660W A SG 11201706660WA
- Authority
- SG
- Singapore
- Prior art keywords
- lithography
- underlayer film
- resin
- forming
- compound
- Prior art date
Links
- 238000001459 lithography Methods 0.000 title 3
- 150000001875 compounds Chemical class 0.000 title 2
- 238000000034 method Methods 0.000 title 2
- 239000011347 resin Substances 0.000 title 2
- 229920005989 resin Polymers 0.000 title 2
- 239000000463 material Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
- C07D209/86—Carbazoles; Hydrogenated carbazoles with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the ring system
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D405/00—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
- C07D405/02—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings
- C07D405/04—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings directly linked by a ring-member-to-ring-member bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/124—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one nitrogen atom in the ring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials For Photolithography (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
- Plural Heterocyclic Compounds (AREA)
- Indole Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015050731 | 2015-03-13 | ||
| PCT/JP2016/057438 WO2016147989A1 (en) | 2015-03-13 | 2016-03-09 | Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201706660WA true SG11201706660WA (en) | 2017-09-28 |
Family
ID=56918793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201706660WA SG11201706660WA (en) | 2015-03-13 | 2016-03-09 | Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10577323B2 (en) |
| EP (1) | EP3269712A4 (en) |
| JP (1) | JP6028959B1 (en) |
| KR (1) | KR20170128287A (en) |
| CN (1) | CN107406383B (en) |
| IL (1) | IL254447A0 (en) |
| SG (1) | SG11201706660WA (en) |
| TW (1) | TWI694996B (en) |
| WO (1) | WO2016147989A1 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102203366B1 (en) | 2014-09-19 | 2021-01-15 | 닛산 가가쿠 가부시키가이샤 | Application solution for resist pattern coating |
| JP2018091943A (en) * | 2016-11-30 | 2018-06-14 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | Flattened film formation composition, flattened film prepared therewith, and method for producing device using the same |
| US20200002307A1 (en) * | 2017-02-28 | 2020-01-02 | Mitsubishi Gas Chemical Company, Inc. | Method for purifying compound or resin and method for producing composition |
| CN110383173B (en) * | 2017-03-10 | 2023-05-09 | Jsr株式会社 | Composition for forming resist underlayer film, method for forming resist underlayer film, and method for manufacturing patterned substrate |
| JP2018154600A (en) * | 2017-03-21 | 2018-10-04 | 三菱瓦斯化学株式会社 | Compound, resin, composition, patterning method, and purifying method |
| KR102349937B1 (en) * | 2017-03-27 | 2022-01-10 | 동우 화인켐 주식회사 | Composition for hard mask |
| JP7368791B2 (en) * | 2017-07-14 | 2023-10-25 | 日産化学株式会社 | Resist underlayer film forming composition, resist underlayer film, resist pattern forming method, and semiconductor device manufacturing method |
| KR102389260B1 (en) * | 2017-11-10 | 2022-04-20 | 동우 화인켐 주식회사 | Composition for hard mask |
| WO2019098109A1 (en) * | 2017-11-16 | 2019-05-23 | Jsr株式会社 | Composition for forming resist underlayer film, resist underlayer film and method for forming same, method for producing patterned substrate, and compound |
| JP6981945B2 (en) | 2018-09-13 | 2021-12-17 | 信越化学工業株式会社 | Pattern formation method |
| JP7161451B2 (en) | 2019-07-05 | 2022-10-26 | 信越化学工業株式会社 | Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and method for forming pattern |
| KR102456165B1 (en) * | 2020-03-10 | 2022-10-17 | 삼성에스디아이 주식회사 | Hardmask composition and method of forming patterns |
| JP2024116011A (en) | 2023-02-15 | 2024-08-27 | 信越化学工業株式会社 | Pattern Formation Method |
| JP2025117967A (en) | 2024-01-31 | 2025-08-13 | 信越化学工業株式会社 | Pattern forming method and laminate |
| JP2025180058A (en) | 2024-05-29 | 2025-12-11 | 信越化学工業株式会社 | METHOD FOR FORMING METAL-CONTAINING FILM PATTERN |
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| CA941222A (en) * | 1970-03-16 | 1974-02-05 | Horizons Research Incorporated | Polyvinylcarbazole photographic systems |
| LU76074A1 (en) * | 1976-10-26 | 1978-05-16 | ||
| CH645306A5 (en) | 1980-04-16 | 1984-09-28 | Ciba Geigy Ag | METHOD FOR PRODUCING CONCENTRATED SOLUTIONS OF COLOR IMAGES. |
| JPS6057340A (en) | 1983-09-08 | 1985-04-03 | Fuji Photo Film Co Ltd | Composition for printing-out |
| DE3923426A1 (en) * | 1989-07-15 | 1991-01-17 | Hoechst Ag | METHOD FOR PRODUCING NOVOLAK RESIN WITH A LOW METAL ION CONTENT |
| DE3940478A1 (en) * | 1989-12-07 | 1991-06-13 | Bayer Ag | BIS-TRIARYLMETHANE COMPOUNDS |
| JPH10152636A (en) * | 1991-05-30 | 1998-06-09 | Ricoh Co Ltd | Magnetic ink |
| JP3774668B2 (en) | 2001-02-07 | 2006-05-17 | 東京エレクトロン株式会社 | Cleaning pretreatment method for silicon nitride film forming apparatus |
| JP2003300922A (en) * | 2002-04-08 | 2003-10-21 | Honshu Chem Ind Co Ltd | Trimethylolated triphenol |
| JP3914493B2 (en) | 2002-11-27 | 2007-05-16 | 東京応化工業株式会社 | Underlayer film forming material for multilayer resist process and wiring forming method using the same |
| CN100350574C (en) | 2003-01-24 | 2007-11-21 | 东京毅力科创株式会社 | Method of CVD for forming silicon nitride film on substrate |
| JP3981030B2 (en) | 2003-03-07 | 2007-09-26 | 信越化学工業株式会社 | Resist underlayer film material and pattern forming method |
| JP4388429B2 (en) | 2004-02-04 | 2009-12-24 | 信越化学工業株式会社 | Resist underlayer film material and pattern forming method |
| JP4659678B2 (en) * | 2005-12-27 | 2011-03-30 | 信越化学工業株式会社 | Photoresist underlayer film forming material and pattern forming method |
| JP4781280B2 (en) | 2006-01-25 | 2011-09-28 | 信越化学工業株式会社 | Antireflection film material, substrate, and pattern forming method |
| JP4638380B2 (en) | 2006-01-27 | 2011-02-23 | 信越化学工業株式会社 | Antireflection film material, substrate having antireflection film, and pattern forming method |
| TW200741353A (en) * | 2006-02-27 | 2007-11-01 | Mitsubishi Gas Chemical Co | Compound for forming antireflective film and antireflective film |
| JP4847426B2 (en) * | 2007-10-03 | 2011-12-28 | 信越化学工業株式会社 | Resist underlayer film material and pattern forming method using the same |
| KR101397354B1 (en) * | 2007-12-07 | 2014-05-19 | 미츠비시 가스 가가쿠 가부시키가이샤 | Composition for forming base film for lithography and method for forming multilayer resist pattern |
| JP5641253B2 (en) * | 2009-06-19 | 2014-12-17 | 日産化学工業株式会社 | Carbazole novolac resin |
| JP5742715B2 (en) | 2009-09-15 | 2015-07-01 | 三菱瓦斯化学株式会社 | Aromatic hydrocarbon resin and composition for forming underlayer film for lithography |
| CN106094440B (en) * | 2011-08-12 | 2019-11-22 | 三菱瓦斯化学株式会社 | Material for forming underlayer film for lithography, underlayer film for lithography, and pattern forming method |
| EP2743769B1 (en) * | 2011-08-12 | 2017-03-22 | Mitsubishi Gas Chemical Company, Inc. | Resist composition, resist pattern formation method, polyphenol compound used therein, and alcohol compound capable of being derived therefrom |
| JP5958734B2 (en) * | 2011-10-17 | 2016-08-02 | 三菱瓦斯化学株式会社 | Novel epoxy compound and method for producing the same |
| JP6421942B2 (en) * | 2013-09-19 | 2018-11-14 | 日産化学株式会社 | Composition for forming underlayer of self-assembled film containing aliphatic polycyclic structure |
| US9920024B2 (en) * | 2013-11-29 | 2018-03-20 | Mitsubishi Gas Chemical Company, Inc. | Method for purifying compound or resin |
| KR102352289B1 (en) * | 2014-04-17 | 2022-01-19 | 삼성디스플레이 주식회사 | Photoresist composition and method of fabricating display substrate using the same |
| US11137686B2 (en) * | 2015-08-31 | 2021-10-05 | Mitsubishi Gas Chemical Company, Inc. | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method |
| KR20180048733A (en) * | 2015-08-31 | 2018-05-10 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | A lower layer film forming material for lithography, a composition for forming a lower layer film for lithography, a lower layer film for lithography and a manufacturing method thereof, a pattern forming method, a resin, and a refining method |
-
2016
- 2016-03-09 KR KR1020177025470A patent/KR20170128287A/en not_active Withdrawn
- 2016-03-09 JP JP2016542787A patent/JP6028959B1/en active Active
- 2016-03-09 CN CN201680015557.XA patent/CN107406383B/en not_active Expired - Fee Related
- 2016-03-09 SG SG11201706660WA patent/SG11201706660WA/en unknown
- 2016-03-09 WO PCT/JP2016/057438 patent/WO2016147989A1/en not_active Ceased
- 2016-03-09 US US15/557,747 patent/US10577323B2/en not_active Expired - Fee Related
- 2016-03-09 EP EP16764819.5A patent/EP3269712A4/en not_active Withdrawn
- 2016-03-11 TW TW105107603A patent/TWI694996B/en not_active IP Right Cessation
-
2017
- 2017-09-12 IL IL254447A patent/IL254447A0/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN107406383A (en) | 2017-11-28 |
| TW201641496A (en) | 2016-12-01 |
| TWI694996B (en) | 2020-06-01 |
| EP3269712A1 (en) | 2018-01-17 |
| JPWO2016147989A1 (en) | 2017-04-27 |
| IL254447A0 (en) | 2017-11-30 |
| WO2016147989A1 (en) | 2016-09-22 |
| EP3269712A4 (en) | 2018-08-08 |
| US20180065930A1 (en) | 2018-03-08 |
| JP6028959B1 (en) | 2016-11-24 |
| US10577323B2 (en) | 2020-03-03 |
| KR20170128287A (en) | 2017-11-22 |
| CN107406383B (en) | 2021-01-26 |
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