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SG11201607553QA - Polishing composition - Google Patents

Polishing composition

Info

Publication number
SG11201607553QA
SG11201607553QA SG11201607553QA SG11201607553QA SG11201607553QA SG 11201607553Q A SG11201607553Q A SG 11201607553QA SG 11201607553Q A SG11201607553Q A SG 11201607553QA SG 11201607553Q A SG11201607553Q A SG 11201607553QA SG 11201607553Q A SG11201607553Q A SG 11201607553QA
Authority
SG
Singapore
Prior art keywords
polishing composition
polishing
composition
Prior art date
Application number
SG11201607553QA
Inventor
Shuugo Yokota
Shota Suzuki
Tomohiko Akatsuka
Yasuyuki Yamato
Koichi Sakabe
Yoshihiro Izawa
Yukinobu Yoshizaki
Chiaki Saito
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201607553QA publication Critical patent/SG11201607553QA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/28Organic compounds containing halogen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3209Amines or imines with one to four nitrogen atoms; Quaternized amines
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23GCLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • C23G5/02Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
    • C23G5/028Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201607553QA 2014-03-28 2015-01-30 Polishing composition SG11201607553QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014069279A JP6343160B2 (en) 2014-03-28 2014-03-28 Polishing composition
PCT/JP2015/052761 WO2015146282A1 (en) 2014-03-28 2015-01-30 Polishing composition

Publications (1)

Publication Number Publication Date
SG11201607553QA true SG11201607553QA (en) 2016-10-28

Family

ID=54194822

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201607553QA SG11201607553QA (en) 2014-03-28 2015-01-30 Polishing composition

Country Status (8)

Country Link
US (1) US10144907B2 (en)
EP (1) EP3124570B1 (en)
JP (1) JP6343160B2 (en)
KR (3) KR20160138049A (en)
CN (1) CN106133104A (en)
SG (1) SG11201607553QA (en)
TW (1) TWI671391B (en)
WO (1) WO2015146282A1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108140569B (en) * 2015-09-30 2019-05-14 福吉米株式会社 Composition for polishing
KR102645587B1 (en) * 2016-02-29 2024-03-11 가부시키가이샤 후지미인코퍼레이티드 Polishing composition and polishing method using the same
JP7028782B2 (en) * 2016-09-28 2022-03-02 株式会社フジミインコーポレーテッド Surface treatment composition
KR102508181B1 (en) * 2016-12-28 2023-03-09 니타 듀퐁 가부시키가이샤 Polishing composition and polishing method
JP7093765B2 (en) * 2017-03-14 2022-06-30 株式会社フジミインコーポレーテッド A surface treatment composition, a method for producing the same, and a surface treatment method using the same.
KR102588218B1 (en) * 2017-09-22 2023-10-13 가부시키가이샤 후지미인코퍼레이티드 Composition for surface treatment, method for producing composition for surface treatment, surface treatment method, and method for producing semiconductor substrate
JP7216478B2 (en) * 2017-09-22 2023-02-01 株式会社フジミインコーポレーテッド Surface treatment composition, method for producing surface treatment composition, method for surface treatment, and method for production of semiconductor substrate
JP6955441B2 (en) * 2017-12-27 2021-10-27 花王株式会社 Abrasive liquid composition for synthetic quartz glass substrate
JP7421855B2 (en) * 2018-03-02 2024-01-25 Agc株式会社 Abrasives, polishing methods, and additives for polishing
WO2019187969A1 (en) * 2018-03-30 2019-10-03 株式会社フジミインコーポレーテッド Polishing composition
US11434391B2 (en) * 2018-09-28 2022-09-06 Fujimi Incorporated Polishing composition, polishing method, and method of producing substrate
WO2020196369A1 (en) 2019-03-26 2020-10-01 株式会社フジミインコーポレーテッド Polishing composition
US11702570B2 (en) * 2019-03-27 2023-07-18 Fujimi Incorporated Polishing composition
KR102520371B1 (en) * 2019-10-18 2023-04-10 삼성에스디아이 주식회사 Etching composition for silicon nitride layer and etching process of silicon nitride layer using the same
JP7409918B2 (en) * 2020-03-13 2024-01-09 株式会社フジミインコーポレーテッド Polishing composition, method for producing polishing composition, polishing method, and method for producing semiconductor substrate
KR20220131152A (en) * 2021-03-19 2022-09-27 가부시키가이샤 후지미인코퍼레이티드 Polishing composition, polishing method, and method for producing semiconductor substrate
KR20240045086A (en) 2022-09-29 2024-04-05 가부시키가이샤 후지미인코퍼레이티드 Surface treatment composition, surface treatment method, and method for producing semiconductor substrate
JP2025055389A (en) * 2023-09-27 2025-04-08 株式会社フジミインコーポレーテッド Polishing composition, concentrated polishing composition, and polishing method

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3265333B2 (en) * 1993-11-18 2002-03-11 株式会社ピュアレックス Silicon wafer cleaning liquid and method for cleaning silicon wafer using the cleaning liquid
CN100381537C (en) * 1998-08-31 2008-04-16 日立化成工业株式会社 Metal grinding liquid and grinding method
JP2003109930A (en) * 2001-09-28 2003-04-11 Mitsubishi Chemicals Corp Cleaning solution and method of cleaning board of semiconductor device
JP4304988B2 (en) * 2002-01-28 2009-07-29 三菱化学株式会社 Semiconductor device substrate cleaning method
JP4212861B2 (en) 2002-09-30 2009-01-21 株式会社フジミインコーポレーテッド Polishing composition and silicon wafer polishing method using the same, and rinsing composition and silicon wafer rinsing method using the same
US20040074518A1 (en) 2002-10-22 2004-04-22 Texas Instruments Incorporated Surfactants for post-chemical mechanical polishing storage and cleaning
EP1564797B1 (en) 2002-11-08 2016-07-27 Fujimi Incorporated Polishing composition and rinsing composition
TWI362415B (en) * 2003-10-27 2012-04-21 Wako Pure Chem Ind Ltd Novel detergent and method for cleaning
KR100640600B1 (en) 2003-12-12 2006-11-01 삼성전자주식회사 Slurry compositions, and fabrication method of semiconductor device including CMPchemical mechanical polishing process using the same
CN1654617A (en) 2004-02-10 2005-08-17 捷时雅株式会社 Cleaning composition, method for cleaning semiconductor substrate, and process for manufacturing semiconductor device
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
JP2007103515A (en) * 2005-09-30 2007-04-19 Fujimi Inc Polishing method
TW200801178A (en) 2006-03-22 2008-01-01 Fujifilm Corp Cleaning solution for substrate for use in semiconductor device and cleaning method using the same
JP4804986B2 (en) * 2006-03-30 2011-11-02 富士フイルム株式会社 Cleaning device for semiconductor device substrate and cleaning method using the same
KR101488444B1 (en) 2007-09-28 2015-01-30 니타 하스 인코포레이티드 Polishing composition
JP5474400B2 (en) * 2008-07-03 2014-04-16 株式会社フジミインコーポレーテッド Semiconductor wetting agent, polishing composition and polishing method using the same
JP5371416B2 (en) * 2008-12-25 2013-12-18 富士フイルム株式会社 Polishing liquid and polishing method
JP2010171362A (en) 2008-12-26 2010-08-05 Fujifilm Corp Cleaning agent for semiconductor device and method for manufacturing the semiconductor device using the same
WO2011135949A1 (en) * 2010-04-30 2011-11-03 株式会社Sumco Method for polishing silicon wafer and polishing liquid therefor
KR20130014588A (en) * 2010-07-02 2013-02-07 가부시키가이샤 사무코 Method for polishing silicon wafer
US8974691B2 (en) 2010-09-24 2015-03-10 Fujimi Incorporated Composition for polishing and composition for rinsing
JP2012156181A (en) * 2011-01-24 2012-08-16 Hitachi Chem Co Ltd Cleaning liquid for semiconductor substrate and cleaning method using the same
US20130053291A1 (en) * 2011-08-22 2013-02-28 Atsushi Otake Composition for cleaning substrates post-chemical mechanical polishing
WO2013162020A1 (en) * 2012-04-27 2013-10-31 和光純薬工業株式会社 Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface
JP2012145968A (en) 2012-05-08 2012-08-02 Asahi Kasei Chemicals Corp Lithography material and manufacturing method of regist pattern

Also Published As

Publication number Publication date
CN106133104A (en) 2016-11-16
KR20160138049A (en) 2016-12-02
JP6343160B2 (en) 2018-06-13
JP2015189899A (en) 2015-11-02
TWI671391B (en) 2019-09-11
US20170175053A1 (en) 2017-06-22
US10144907B2 (en) 2018-12-04
WO2015146282A1 (en) 2015-10-01
KR20210154887A (en) 2021-12-21
EP3124570B1 (en) 2020-09-09
TW201536903A (en) 2015-10-01
EP3124570A1 (en) 2017-02-01
EP3124570A4 (en) 2017-02-08
KR20210154886A (en) 2021-12-21
KR102451385B1 (en) 2022-10-07

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