SG11201607553QA - Polishing composition - Google Patents
Polishing compositionInfo
- Publication number
- SG11201607553QA SG11201607553QA SG11201607553QA SG11201607553QA SG11201607553QA SG 11201607553Q A SG11201607553Q A SG 11201607553QA SG 11201607553Q A SG11201607553Q A SG 11201607553QA SG 11201607553Q A SG11201607553Q A SG 11201607553QA SG 11201607553Q A SG11201607553Q A SG 11201607553QA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing composition
- polishing
- composition
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/028—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014069279A JP6343160B2 (en) | 2014-03-28 | 2014-03-28 | Polishing composition |
PCT/JP2015/052761 WO2015146282A1 (en) | 2014-03-28 | 2015-01-30 | Polishing composition |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201607553QA true SG11201607553QA (en) | 2016-10-28 |
Family
ID=54194822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201607553QA SG11201607553QA (en) | 2014-03-28 | 2015-01-30 | Polishing composition |
Country Status (8)
Country | Link |
---|---|
US (1) | US10144907B2 (en) |
EP (1) | EP3124570B1 (en) |
JP (1) | JP6343160B2 (en) |
KR (3) | KR20160138049A (en) |
CN (1) | CN106133104A (en) |
SG (1) | SG11201607553QA (en) |
TW (1) | TWI671391B (en) |
WO (1) | WO2015146282A1 (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108140569B (en) * | 2015-09-30 | 2019-05-14 | 福吉米株式会社 | Composition for polishing |
KR102645587B1 (en) * | 2016-02-29 | 2024-03-11 | 가부시키가이샤 후지미인코퍼레이티드 | Polishing composition and polishing method using the same |
JP7028782B2 (en) * | 2016-09-28 | 2022-03-02 | 株式会社フジミインコーポレーテッド | Surface treatment composition |
KR102508181B1 (en) * | 2016-12-28 | 2023-03-09 | 니타 듀퐁 가부시키가이샤 | Polishing composition and polishing method |
JP7093765B2 (en) * | 2017-03-14 | 2022-06-30 | 株式会社フジミインコーポレーテッド | A surface treatment composition, a method for producing the same, and a surface treatment method using the same. |
KR102588218B1 (en) * | 2017-09-22 | 2023-10-13 | 가부시키가이샤 후지미인코퍼레이티드 | Composition for surface treatment, method for producing composition for surface treatment, surface treatment method, and method for producing semiconductor substrate |
JP7216478B2 (en) * | 2017-09-22 | 2023-02-01 | 株式会社フジミインコーポレーテッド | Surface treatment composition, method for producing surface treatment composition, method for surface treatment, and method for production of semiconductor substrate |
JP6955441B2 (en) * | 2017-12-27 | 2021-10-27 | 花王株式会社 | Abrasive liquid composition for synthetic quartz glass substrate |
JP7421855B2 (en) * | 2018-03-02 | 2024-01-25 | Agc株式会社 | Abrasives, polishing methods, and additives for polishing |
WO2019187969A1 (en) * | 2018-03-30 | 2019-10-03 | 株式会社フジミインコーポレーテッド | Polishing composition |
US11434391B2 (en) * | 2018-09-28 | 2022-09-06 | Fujimi Incorporated | Polishing composition, polishing method, and method of producing substrate |
WO2020196369A1 (en) | 2019-03-26 | 2020-10-01 | 株式会社フジミインコーポレーテッド | Polishing composition |
US11702570B2 (en) * | 2019-03-27 | 2023-07-18 | Fujimi Incorporated | Polishing composition |
KR102520371B1 (en) * | 2019-10-18 | 2023-04-10 | 삼성에스디아이 주식회사 | Etching composition for silicon nitride layer and etching process of silicon nitride layer using the same |
JP7409918B2 (en) * | 2020-03-13 | 2024-01-09 | 株式会社フジミインコーポレーテッド | Polishing composition, method for producing polishing composition, polishing method, and method for producing semiconductor substrate |
KR20220131152A (en) * | 2021-03-19 | 2022-09-27 | 가부시키가이샤 후지미인코퍼레이티드 | Polishing composition, polishing method, and method for producing semiconductor substrate |
KR20240045086A (en) | 2022-09-29 | 2024-04-05 | 가부시키가이샤 후지미인코퍼레이티드 | Surface treatment composition, surface treatment method, and method for producing semiconductor substrate |
JP2025055389A (en) * | 2023-09-27 | 2025-04-08 | 株式会社フジミインコーポレーテッド | Polishing composition, concentrated polishing composition, and polishing method |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3265333B2 (en) * | 1993-11-18 | 2002-03-11 | 株式会社ピュアレックス | Silicon wafer cleaning liquid and method for cleaning silicon wafer using the cleaning liquid |
CN100381537C (en) * | 1998-08-31 | 2008-04-16 | 日立化成工业株式会社 | Metal grinding liquid and grinding method |
JP2003109930A (en) * | 2001-09-28 | 2003-04-11 | Mitsubishi Chemicals Corp | Cleaning solution and method of cleaning board of semiconductor device |
JP4304988B2 (en) * | 2002-01-28 | 2009-07-29 | 三菱化学株式会社 | Semiconductor device substrate cleaning method |
JP4212861B2 (en) | 2002-09-30 | 2009-01-21 | 株式会社フジミインコーポレーテッド | Polishing composition and silicon wafer polishing method using the same, and rinsing composition and silicon wafer rinsing method using the same |
US20040074518A1 (en) | 2002-10-22 | 2004-04-22 | Texas Instruments Incorporated | Surfactants for post-chemical mechanical polishing storage and cleaning |
EP1564797B1 (en) | 2002-11-08 | 2016-07-27 | Fujimi Incorporated | Polishing composition and rinsing composition |
TWI362415B (en) * | 2003-10-27 | 2012-04-21 | Wako Pure Chem Ind Ltd | Novel detergent and method for cleaning |
KR100640600B1 (en) | 2003-12-12 | 2006-11-01 | 삼성전자주식회사 | Slurry compositions, and fabrication method of semiconductor device including CMPchemical mechanical polishing process using the same |
CN1654617A (en) | 2004-02-10 | 2005-08-17 | 捷时雅株式会社 | Cleaning composition, method for cleaning semiconductor substrate, and process for manufacturing semiconductor device |
US20050205835A1 (en) * | 2004-03-19 | 2005-09-22 | Tamboli Dnyanesh C | Alkaline post-chemical mechanical planarization cleaning compositions |
JP2007103515A (en) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | Polishing method |
TW200801178A (en) | 2006-03-22 | 2008-01-01 | Fujifilm Corp | Cleaning solution for substrate for use in semiconductor device and cleaning method using the same |
JP4804986B2 (en) * | 2006-03-30 | 2011-11-02 | 富士フイルム株式会社 | Cleaning device for semiconductor device substrate and cleaning method using the same |
KR101488444B1 (en) | 2007-09-28 | 2015-01-30 | 니타 하스 인코포레이티드 | Polishing composition |
JP5474400B2 (en) * | 2008-07-03 | 2014-04-16 | 株式会社フジミインコーポレーテッド | Semiconductor wetting agent, polishing composition and polishing method using the same |
JP5371416B2 (en) * | 2008-12-25 | 2013-12-18 | 富士フイルム株式会社 | Polishing liquid and polishing method |
JP2010171362A (en) | 2008-12-26 | 2010-08-05 | Fujifilm Corp | Cleaning agent for semiconductor device and method for manufacturing the semiconductor device using the same |
WO2011135949A1 (en) * | 2010-04-30 | 2011-11-03 | 株式会社Sumco | Method for polishing silicon wafer and polishing liquid therefor |
KR20130014588A (en) * | 2010-07-02 | 2013-02-07 | 가부시키가이샤 사무코 | Method for polishing silicon wafer |
US8974691B2 (en) | 2010-09-24 | 2015-03-10 | Fujimi Incorporated | Composition for polishing and composition for rinsing |
JP2012156181A (en) * | 2011-01-24 | 2012-08-16 | Hitachi Chem Co Ltd | Cleaning liquid for semiconductor substrate and cleaning method using the same |
US20130053291A1 (en) * | 2011-08-22 | 2013-02-28 | Atsushi Otake | Composition for cleaning substrates post-chemical mechanical polishing |
WO2013162020A1 (en) * | 2012-04-27 | 2013-10-31 | 和光純薬工業株式会社 | Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface |
JP2012145968A (en) | 2012-05-08 | 2012-08-02 | Asahi Kasei Chemicals Corp | Lithography material and manufacturing method of regist pattern |
-
2014
- 2014-03-28 JP JP2014069279A patent/JP6343160B2/en active Active
-
2015
- 2015-01-30 US US15/129,326 patent/US10144907B2/en active Active
- 2015-01-30 SG SG11201607553QA patent/SG11201607553QA/en unknown
- 2015-01-30 KR KR1020167026324A patent/KR20160138049A/en not_active Ceased
- 2015-01-30 KR KR1020217040784A patent/KR102451385B1/en active Active
- 2015-01-30 CN CN201580016859.4A patent/CN106133104A/en active Pending
- 2015-01-30 WO PCT/JP2015/052761 patent/WO2015146282A1/en active Application Filing
- 2015-01-30 EP EP15769785.5A patent/EP3124570B1/en active Active
- 2015-01-30 KR KR1020217040785A patent/KR20210154887A/en not_active Ceased
- 2015-02-09 TW TW104104252A patent/TWI671391B/en active
Also Published As
Publication number | Publication date |
---|---|
CN106133104A (en) | 2016-11-16 |
KR20160138049A (en) | 2016-12-02 |
JP6343160B2 (en) | 2018-06-13 |
JP2015189899A (en) | 2015-11-02 |
TWI671391B (en) | 2019-09-11 |
US20170175053A1 (en) | 2017-06-22 |
US10144907B2 (en) | 2018-12-04 |
WO2015146282A1 (en) | 2015-10-01 |
KR20210154887A (en) | 2021-12-21 |
EP3124570B1 (en) | 2020-09-09 |
TW201536903A (en) | 2015-10-01 |
EP3124570A1 (en) | 2017-02-01 |
EP3124570A4 (en) | 2017-02-08 |
KR20210154886A (en) | 2021-12-21 |
KR102451385B1 (en) | 2022-10-07 |
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