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SG11201510638XA - Process for locating devices - Google Patents

Process for locating devices

Info

Publication number
SG11201510638XA
SG11201510638XA SG11201510638XA SG11201510638XA SG11201510638XA SG 11201510638X A SG11201510638X A SG 11201510638XA SG 11201510638X A SG11201510638X A SG 11201510638XA SG 11201510638X A SG11201510638X A SG 11201510638XA SG 11201510638X A SG11201510638X A SG 11201510638XA
Authority
SG
Singapore
Prior art keywords
locating devices
locating
devices
Prior art date
Application number
SG11201510638XA
Inventor
Marcel Broekaart
Ionut Radu
Blanchard Chrystelle Lagahe
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11201510638XA publication Critical patent/SG11201510638XA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/544Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026Wafer-level processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54426Marks applied to semiconductor devices or parts for alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Die Bonding (AREA)
  • Machine Tool Sensing Apparatuses (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Micromachines (AREA)
SG11201510638XA 2013-07-15 2014-06-24 Process for locating devices SG11201510638XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1301697A FR3008543B1 (en) 2013-07-15 2013-07-15 METHOD OF LOCATING DEVICES
PCT/FR2014/051568 WO2015007971A1 (en) 2013-07-15 2014-06-24 Method for locating devices

Publications (1)

Publication Number Publication Date
SG11201510638XA true SG11201510638XA (en) 2016-01-28

Family

ID=49546458

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201510638XA SG11201510638XA (en) 2013-07-15 2014-06-24 Process for locating devices

Country Status (8)

Country Link
US (2) US20160197006A1 (en)
JP (1) JP6463751B2 (en)
KR (1) KR102218891B1 (en)
AT (1) AT521083B1 (en)
DE (1) DE112014003280T5 (en)
FR (1) FR3008543B1 (en)
SG (1) SG11201510638XA (en)
WO (1) WO2015007971A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3076292B1 (en) * 2017-12-28 2020-01-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR TRANSFERRING A USEFUL LAYER ONTO A SUPPORT SUBSTRATE
FR3079659B1 (en) * 2018-03-29 2020-03-13 Soitec METHOD FOR MANUFACTURING A DONOR SUBSTRATE FOR THE PRODUCTION OF AN INTEGRATED THREE-DIMENSIONAL STRUCTURE AND METHOD FOR MANUFACTURING SUCH AN INTEGRATED STRUCTURE

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2628555B2 (en) 1988-03-22 1997-07-09 富士通株式会社 Method for manufacturing semiconductor device
KR0155835B1 (en) * 1995-06-23 1998-12-01 김광호 Method for forming align key pattern of semiconductor device
KR100543393B1 (en) * 2000-03-09 2006-01-20 후지쯔 가부시끼가이샤 Semiconductor device and manufacturing method thereof
JP2005142252A (en) * 2003-11-05 2005-06-02 Sony Corp Forming method of alignment mark, semiconductor device, and manufacturing method thereof
EP1571705A3 (en) 2004-03-01 2006-01-04 S.O.I.Tec Silicon on Insulator Technologies Process of making a semiconductor structure on a substrate
KR101233105B1 (en) * 2008-08-27 2013-02-15 소이텍 Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters
JP5196160B2 (en) * 2008-10-17 2013-05-15 日亜化学工業株式会社 Semiconductor light emitting device
JP5617835B2 (en) * 2009-02-24 2014-11-05 日本電気株式会社 Semiconductor device and manufacturing method thereof
US8058137B1 (en) * 2009-04-14 2011-11-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
WO2011132654A1 (en) 2010-04-20 2011-10-27 住友電気工業株式会社 Method for producing composite substrate
JP5440442B2 (en) * 2010-08-18 2014-03-12 株式会社リコー Optical scanning apparatus and image forming apparatus
WO2012042653A1 (en) * 2010-09-30 2012-04-05 富士電機株式会社 Method of manufacturing semiconductor device
US8502389B2 (en) * 2011-08-08 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor and method for forming the same
US8779539B2 (en) * 2011-09-21 2014-07-15 United Microelectronics Corporation Image sensor and method for fabricating the same
FR3005648B1 (en) * 2013-05-15 2016-02-12 Commissariat Energie Atomique METHOD FOR ENCAPSULATING A MICROELECTRONIC DEVICE COMPRISING A NOVEL GAS INJECTION THROUGH A MATERIAL PERMEABLE TO THIS NOBLE GAS

Also Published As

Publication number Publication date
US11088016B2 (en) 2021-08-10
AT521083B1 (en) 2020-04-15
AT521083A3 (en) 2019-12-15
US20200161172A1 (en) 2020-05-21
AT521083A2 (en) 2019-10-15
JP6463751B2 (en) 2019-02-06
JP2016527717A (en) 2016-09-08
KR20160031489A (en) 2016-03-22
FR3008543B1 (en) 2015-07-17
FR3008543A1 (en) 2015-01-16
US20160197006A1 (en) 2016-07-07
WO2015007971A1 (en) 2015-01-22
KR102218891B1 (en) 2021-02-24
DE112014003280T5 (en) 2016-04-14

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