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SG11201500106QA - Methods and apparatus for delivering process gases to a substrate - Google Patents

Methods and apparatus for delivering process gases to a substrate

Info

Publication number
SG11201500106QA
SG11201500106QA SG11201500106QA SG11201500106QA SG11201500106QA SG 11201500106Q A SG11201500106Q A SG 11201500106QA SG 11201500106Q A SG11201500106Q A SG 11201500106QA SG 11201500106Q A SG11201500106Q A SG 11201500106QA SG 11201500106Q A SG11201500106Q A SG 11201500106QA
Authority
SG
Singapore
Prior art keywords
substrate
methods
process gases
delivering process
delivering
Prior art date
Application number
SG11201500106QA
Inventor
Joseph M Ranish
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201500106QA publication Critical patent/SG11201500106QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/001—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work incorporating means for heating or cooling the liquid or other fluent material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201500106QA 2012-07-27 2013-07-11 Methods and apparatus for delivering process gases to a substrate SG11201500106QA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261676403P 2012-07-27 2012-07-27
PCT/US2013/050092 WO2014018275A1 (en) 2012-07-27 2013-07-11 Methods and apparatus for delivering process gases to a substrate
US13/939,591 US10486183B2 (en) 2012-07-27 2013-07-11 Methods and apparatus for delivering process gases to a substrate

Publications (1)

Publication Number Publication Date
SG11201500106QA true SG11201500106QA (en) 2015-03-30

Family

ID=49995147

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201500106QA SG11201500106QA (en) 2012-07-27 2013-07-11 Methods and apparatus for delivering process gases to a substrate
SG10201700727YA SG10201700727YA (en) 2012-07-27 2013-07-11 Methods and apparatus for delivering process gases to a substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201700727YA SG10201700727YA (en) 2012-07-27 2013-07-11 Methods and apparatus for delivering process gases to a substrate

Country Status (7)

Country Link
US (1) US10486183B2 (en)
KR (1) KR20150038406A (en)
CN (1) CN104471678B (en)
DE (1) DE112013003706T5 (en)
SG (2) SG11201500106QA (en)
TW (1) TWI600787B (en)
WO (1) WO2014018275A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
KR101440911B1 (en) * 2012-06-18 2014-09-18 주식회사 유진테크 Apparatus for depositing on substrate
US10174422B2 (en) 2012-10-25 2019-01-08 Applied Materials, Inc. Apparatus for selective gas injection and extraction
JP6542245B2 (en) * 2014-02-14 2019-07-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Upper dome with injection assembly
KR102462931B1 (en) * 2015-10-30 2022-11-04 삼성전자주식회사 Gas Supply Unit and Substrate Treating Apparatus
US10249525B2 (en) * 2016-10-03 2019-04-02 Applied Materials, Inc. Dynamic leveling process heater lift
US11532459B2 (en) * 2017-11-09 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical vapor deposition apparatus with cleaning gas flow guiding member
US11834743B2 (en) * 2018-09-14 2023-12-05 Applied Materials, Inc. Segmented showerhead for uniform delivery of multiple precursors
TWI889801B (en) * 2020-04-17 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Injector, and vertical furnace

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0170391B1 (en) * 1989-06-16 1999-03-30 다카시마 히로시 Object processing device and processing method
US5728253A (en) * 1993-03-04 1998-03-17 Tokyo Electron Limited Method and devices for detecting the end point of plasma process
US6527865B1 (en) * 1997-09-11 2003-03-04 Applied Materials, Inc. Temperature controlled gas feedthrough
US6499425B1 (en) * 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
TWI334888B (en) * 2000-09-08 2010-12-21 Tokyo Electron Ltd
US20030024900A1 (en) 2001-07-24 2003-02-06 Tokyo Electron Limited Variable aspect ratio plasma source
JP2004111857A (en) 2002-09-20 2004-04-08 Dainippon Screen Mfg Co Ltd Wafer treating system
US20040082251A1 (en) * 2002-10-29 2004-04-29 Applied Materials, Inc. Apparatus for adjustable gas distribution for semiconductor substrate processing
US7699932B2 (en) * 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US8815014B2 (en) * 2005-11-18 2014-08-26 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
KR100849366B1 (en) 2006-08-24 2008-07-31 세메스 주식회사 Apparatus and method for processing substrates
US20080066738A1 (en) * 2006-09-19 2008-03-20 Landis Harry M Double-walled solar heater apparatus and method for use
JP5090089B2 (en) * 2006-10-19 2012-12-05 大日本スクリーン製造株式会社 Substrate processing equipment
KR100842745B1 (en) * 2006-11-30 2008-07-01 주식회사 하이닉스반도체 Plasma Process Equipment and Process Method With Scan Injector
JP2008182131A (en) * 2007-01-26 2008-08-07 Fujimori Gijutsu Kenkyusho:Kk Vapor dryer
US8057601B2 (en) 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
KR20090028223A (en) 2007-09-14 2009-03-18 세메스 주식회사 Substrate processing apparatus and method, and carbon nanotube synthesis apparatus
JP5117365B2 (en) * 2008-02-15 2013-01-16 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing method, and storage medium
US8111978B2 (en) 2008-07-11 2012-02-07 Applied Materials, Inc. Rapid thermal processing chamber with shower head
TWI437622B (en) 2008-11-26 2014-05-11 Ind Tech Res Inst Gas shower module
CN101748384B (en) * 2008-12-03 2012-07-11 财团法人工业技术研究院 Gas Distribution Spray Module
US8298372B2 (en) 2009-04-20 2012-10-30 Applied Materials, Inc. Quartz window having gas feed and processing equipment incorporating same
CN102239544A (en) * 2009-09-17 2011-11-09 东京毅力科创株式会社 Plasma processing apparatus and gas supply mechanism for plasma processing apparatus
CN102051595B (en) 2009-10-29 2013-04-03 无锡华润上华半导体有限公司 Chemical vapor deposition device and spray nozzle thereof
US8721791B2 (en) * 2010-07-28 2014-05-13 Applied Materials, Inc. Showerhead support structure for improved gas flow
JP2012084648A (en) 2010-10-08 2012-04-26 Toshiba Corp Gas piping member, gas piping
CN102485357B (en) * 2010-12-03 2014-11-05 北京北方微电子基地设备工艺研究中心有限责任公司 Method and device for cleaning support plate and substrate film-plating device
CN102485257B (en) 2010-12-03 2013-10-09 天津中新药业集团股份有限公司第六中药厂 Chinese medicinal composition with lung ventilating, stagnated qi dispersing, heat clearing and phlegm eliminating effects and its preparation method
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate

Also Published As

Publication number Publication date
WO2014018275A1 (en) 2014-01-30
SG10201700727YA (en) 2017-02-27
US20140030433A1 (en) 2014-01-30
CN104471678A (en) 2015-03-25
TWI600787B (en) 2017-10-01
US10486183B2 (en) 2019-11-26
DE112013003706T5 (en) 2015-04-09
TW201406989A (en) 2014-02-16
CN104471678B (en) 2018-06-29
KR20150038406A (en) 2015-04-08

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