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SG110029A1 - Substrate for growing a iii-v nitride epilayer and method for selecting the same - Google Patents

Substrate for growing a iii-v nitride epilayer and method for selecting the same

Info

Publication number
SG110029A1
SG110029A1 SG200301290A SG200301290A SG110029A1 SG 110029 A1 SG110029 A1 SG 110029A1 SG 200301290 A SG200301290 A SG 200301290A SG 200301290 A SG200301290 A SG 200301290A SG 110029 A1 SG110029 A1 SG 110029A1
Authority
SG
Singapore
Prior art keywords
growing
iii
selecting
substrate
same
Prior art date
Application number
SG200301290A
Inventor
Ping Wu
Hong Mei Jin
Original Assignee
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Science Tech & Res filed Critical Agency Science Tech & Res
Priority to SG200301290A priority Critical patent/SG110029A1/en
Publication of SG110029A1 publication Critical patent/SG110029A1/en

Links

SG200301290A 2003-03-14 2003-03-14 Substrate for growing a iii-v nitride epilayer and method for selecting the same SG110029A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG200301290A SG110029A1 (en) 2003-03-14 2003-03-14 Substrate for growing a iii-v nitride epilayer and method for selecting the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200301290A SG110029A1 (en) 2003-03-14 2003-03-14 Substrate for growing a iii-v nitride epilayer and method for selecting the same

Publications (1)

Publication Number Publication Date
SG110029A1 true SG110029A1 (en) 2005-04-28

Family

ID=34699262

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200301290A SG110029A1 (en) 2003-03-14 2003-03-14 Substrate for growing a iii-v nitride epilayer and method for selecting the same

Country Status (1)

Country Link
SG (1) SG110029A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982178A (en) * 1975-01-29 1976-09-21 The United States Of America As Represented By The Secretary Of The Navy Method of determining adequacy of substrate memory wire during the plating process
EP0532815A1 (en) * 1991-09-16 1993-03-24 International Business Machines Corporation Method for manufacturing lattice-matched substrates for high-Tc superconductor films
JP2001237318A (en) * 2000-02-23 2001-08-31 Matsushita Electric Ind Co Ltd Model parameter optimization method and circuit simulation method using the same
US20020028314A1 (en) * 1994-01-27 2002-03-07 Tischler Michael A. Bulk single crystal gallium nitride and method of making same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982178A (en) * 1975-01-29 1976-09-21 The United States Of America As Represented By The Secretary Of The Navy Method of determining adequacy of substrate memory wire during the plating process
EP0532815A1 (en) * 1991-09-16 1993-03-24 International Business Machines Corporation Method for manufacturing lattice-matched substrates for high-Tc superconductor films
US20020028314A1 (en) * 1994-01-27 2002-03-07 Tischler Michael A. Bulk single crystal gallium nitride and method of making same
JP2001237318A (en) * 2000-02-23 2001-08-31 Matsushita Electric Ind Co Ltd Model parameter optimization method and circuit simulation method using the same

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