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SG103296A1 - Thin film transistors and semiconductor device - Google Patents

Thin film transistors and semiconductor device

Info

Publication number
SG103296A1
SG103296A1 SG200103453A SG200103453A SG103296A1 SG 103296 A1 SG103296 A1 SG 103296A1 SG 200103453 A SG200103453 A SG 200103453A SG 200103453 A SG200103453 A SG 200103453A SG 103296 A1 SG103296 A1 SG 103296A1
Authority
SG
Singapore
Prior art keywords
thin film
semiconductor device
film transistors
transistors
semiconductor
Prior art date
Application number
SG200103453A
Inventor
Yamazaki Shunpei
Mitsuki Toru
Kasahara Kenji
Asami Taketomi
Takano Tamae
Shichi Takeshi
Kokubo Chiho
Arai Yasuyuki
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG103296A1 publication Critical patent/SG103296A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
SG200103453A 2000-06-12 2001-06-11 Thin film transistors and semiconductor device SG103296A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000176188 2000-06-12
JP2000176173 2000-06-12
JP2000177641 2000-06-13
JP2000177652 2000-06-13

Publications (1)

Publication Number Publication Date
SG103296A1 true SG103296A1 (en) 2004-04-29

Family

ID=27481357

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200407844-0A SG152040A1 (en) 2000-06-12 2001-06-11 Thin film transistors and semiconductor device
SG200103453A SG103296A1 (en) 2000-06-12 2001-06-11 Thin film transistors and semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG200407844-0A SG152040A1 (en) 2000-06-12 2001-06-11 Thin film transistors and semiconductor device

Country Status (7)

Country Link
US (2) US6690068B2 (en)
EP (1) EP1164635A3 (en)
KR (1) KR100820248B1 (en)
CN (1) CN1346152A (en)
MY (1) MY124509A (en)
SG (2) SG152040A1 (en)
TW (1) TWI263336B (en)

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US6861338B2 (en) * 2002-08-22 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
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DE102005047081B4 (en) * 2005-09-30 2019-01-31 Robert Bosch Gmbh Process for the plasma-free etching of silicon with the etching gas ClF3 or XeF2
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KR20090091175A (en) * 2006-11-17 2009-08-26 쌩-고벵 글래스 프랑스 Electrode for organic light emitting device, acid etching and organic light emitting device comprising same
KR100883350B1 (en) * 2006-12-04 2009-02-11 한국전자통신연구원 Schottky Barrier Thin Film Transistor Manufacturing Method
FR2913146B1 (en) * 2007-02-23 2009-05-01 Saint Gobain DISCONTINUOUS ELECTRODE, ORGANIC ELECTROLUMINESCENCE DEVICE INCORPORATING THE SAME, AND THEIR MANUFACTURING
US7972943B2 (en) * 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR100982395B1 (en) * 2007-04-25 2010-09-14 주식회사 엘지화학 Thin film transistor and method for manufacturing same
FR2924274B1 (en) * 2007-11-22 2012-11-30 Saint Gobain SUBSTRATE CARRYING AN ELECTRODE, ORGANIC ELECTROLUMINESCENT DEVICE INCORPORATING IT, AND MANUFACTURING THE SAME
JP5395415B2 (en) 2007-12-03 2014-01-22 株式会社半導体エネルギー研究所 Method for manufacturing thin film transistor
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JP5527966B2 (en) * 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 Thin film transistor
KR101015847B1 (en) * 2008-01-18 2011-02-23 삼성모바일디스플레이주식회사 Thin film transistor, manufacturing method thereof and organic light emitting display device having same
FR2936358B1 (en) 2008-09-24 2011-01-21 Saint Gobain PROCESS FOR MANUFACTURING SUBMILLIMETRIC MOLDED MASKS FOR SUBMILLIMETRIC ELECTROCONDUCTIVE GRID, SUBMILLIMETRIC MOLDING MASK, SUBMILLIMETRIC ELECTROCONDUCTIVE GRID.
FR2936362B1 (en) 2008-09-25 2010-09-10 Saint Gobain METHOD FOR MANUFACTURING AN ELECTROCONDUCTIVE SUBMILLIMETRIC GRID COATED WITH A SURGRILLE GRID, ELECTROCONDUCTIVE SUBMILLIMETER GRID COVERED WITH AN OVERGRILL
US20100081251A1 (en) * 2008-09-29 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate
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KR101592016B1 (en) * 2009-07-08 2016-02-05 삼성디스플레이 주식회사 Polarizer and liquid crystal display device having the same
WO2011004724A1 (en) * 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
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Also Published As

Publication number Publication date
MY124509A (en) 2006-06-30
SG152040A1 (en) 2009-05-29
EP1164635A3 (en) 2004-09-29
KR20010112599A (en) 2001-12-20
US6690068B2 (en) 2004-02-10
TWI263336B (en) 2006-10-01
US20020008286A1 (en) 2002-01-24
US7307282B2 (en) 2007-12-11
KR100820248B1 (en) 2008-04-08
CN1346152A (en) 2002-04-24
US20040108576A1 (en) 2004-06-10
EP1164635A2 (en) 2001-12-19

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