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SG10201908119RA - Colloidal silica chemical-mechanical polishing composition - Google Patents

Colloidal silica chemical-mechanical polishing composition

Info

Publication number
SG10201908119RA
SG10201908119RA SG10201908119RA SG10201908119RA SG 10201908119R A SG10201908119R A SG 10201908119RA SG 10201908119R A SG10201908119R A SG 10201908119RA SG 10201908119R A SG10201908119R A SG 10201908119RA
Authority
SG
Singapore
Prior art keywords
colloidal silica
mechanical polishing
polishing composition
chemical
silica chemical
Prior art date
Application number
Inventor
Steven Grumbine
Jeffrey Dysard
Ernest Shen
Mary Cavanaugh
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=54929829&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG10201908119R(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG10201908119RA publication Critical patent/SG10201908119RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

COLLOIDAL SILICA CHEMICAL-MECHANICAL POLISHING COMPOSITION OF THE DISCLOSURE A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier. The colloidal silica abrasive particles include a nitrogen-containing or phosphorus-containing compound incorporated therein such that the particles have a positive charge. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS. Fig. 1
SG10201908119R 2014-06-25 2015-06-25 Colloidal silica chemical-mechanical polishing composition SG10201908119RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201462017100P 2014-06-25 2014-06-25

Publications (1)

Publication Number Publication Date
SG10201908119RA true SG10201908119RA (en) 2019-10-30

Family

ID=54929829

Family Applications (6)

Application Number Title Priority Date Filing Date
SG11201610329PA SG11201610329PA (en) 2014-06-25 2015-06-25 Methods for fabricating a chemical-mechanical polishing composition
SG10201908119R SG10201908119RA (en) 2014-06-25 2015-06-25 Colloidal silica chemical-mechanical polishing composition
SG11201610533WA SG11201610533WA (en) 2014-06-25 2015-06-25 Colloidal silica chemical-mechanical polishing composition
SG10201908731P SG10201908731PA (en) 2014-06-25 2015-06-25 Methods for fabricating a chemical-mechanical polishing composition
SG11201610328YA SG11201610328YA (en) 2014-06-25 2015-06-25 Colloidal silica chemical-mechanical polishing composition
SG11201610331RA SG11201610331RA (en) 2014-06-25 2015-06-25 Colloidal silica chemical-mechanical polishing concentrate

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201610329PA SG11201610329PA (en) 2014-06-25 2015-06-25 Methods for fabricating a chemical-mechanical polishing composition

Family Applications After (4)

Application Number Title Priority Date Filing Date
SG11201610533WA SG11201610533WA (en) 2014-06-25 2015-06-25 Colloidal silica chemical-mechanical polishing composition
SG10201908731P SG10201908731PA (en) 2014-06-25 2015-06-25 Methods for fabricating a chemical-mechanical polishing composition
SG11201610328YA SG11201610328YA (en) 2014-06-25 2015-06-25 Colloidal silica chemical-mechanical polishing composition
SG11201610331RA SG11201610331RA (en) 2014-06-25 2015-06-25 Colloidal silica chemical-mechanical polishing concentrate

Country Status (8)

Country Link
US (4) US9803106B2 (en)
EP (4) EP3161096B1 (en)
JP (4) JP6462013B2 (en)
KR (5) KR102458508B1 (en)
CN (4) CN107075343B (en)
SG (6) SG11201610329PA (en)
TW (4) TWI547553B (en)
WO (4) WO2015200678A1 (en)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10688623B2 (en) * 2014-09-30 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Slurry dispersion system with real time control
US10781342B2 (en) * 2015-03-30 2020-09-22 Fujimi Incorporated Polishing composition
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
WO2017214185A1 (en) * 2016-06-07 2017-12-14 Cabot Microelectronics Corporation Chemical-mechanical processing slurry and methods for processing a nickel substrate surface
JP6870219B2 (en) * 2016-06-14 2021-05-12 住友ゴム工業株式会社 Silica morphology control method
US20180094166A1 (en) * 2016-09-30 2018-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp polishing composition comprising positive and negative silica particles
US9783702B1 (en) * 2016-10-19 2017-10-10 Rohm And Haas Electronic Materials Cmp Holdings Inc. Aqueous compositions of low abrasive silica particles
US9803108B1 (en) 2016-10-19 2017-10-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous compositions of stabilized aminosilane group containing silica particles
KR102492098B1 (en) * 2017-03-14 2023-01-26 쇼와덴코머티리얼즈가부시끼가이샤 Polishing agent, stock solution for polishing agent, and polishing method
US10037889B1 (en) * 2017-03-29 2018-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films
WO2018199453A1 (en) * 2017-04-27 2018-11-01 주식회사 동진쎄미켐 Slurry composition for chemical mechanical polishing
KR102611598B1 (en) * 2017-04-27 2023-12-08 주식회사 동진쎄미켐 Aqueous slurry composition for chemical mechanical polishing
US10221336B2 (en) * 2017-06-16 2019-03-05 rohm and Hass Electronic Materials CMP Holdings, Inc. Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them
US10119048B1 (en) 2017-07-31 2018-11-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low-abrasive CMP slurry compositions with tunable selectivity
US11655394B2 (en) * 2017-08-09 2023-05-23 Resonac Corporation Polishing solution and polishing method
US10600655B2 (en) 2017-08-10 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
CN107629758A (en) * 2017-08-22 2018-01-26 长江存储科技有限责任公司 One kind manufacture semiconductor device grinding agent and preparation method thereof
US10316218B2 (en) * 2017-08-30 2019-06-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them
JP2019050307A (en) * 2017-09-11 2019-03-28 株式会社フジミインコーポレーテッド Polishing method, and composition for polishing and method for manufacturing the same
CN111094481A (en) * 2017-09-15 2020-05-01 嘉柏微电子材料股份公司 Composition for tungsten chemical mechanical polishing
US11186748B2 (en) 2017-09-28 2021-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them
US10508221B2 (en) 2017-09-28 2019-12-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10584265B2 (en) 2017-09-28 2020-03-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them
US10428241B2 (en) * 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
KR102274032B1 (en) * 2017-11-16 2021-07-06 주식회사 엘지화학 Core-shell copolymer composition, method for preparing the copolymer composition and resin composition comprising the copolymer composition
US20190185713A1 (en) * 2017-12-14 2019-06-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp slurry compositions containing silica with trimethylsulfoxonium cations
JP2021089906A (en) * 2018-03-22 2021-06-10 株式会社フジミインコーポレーテッド Germanium dissolution inhibitor
JPWO2019181399A1 (en) * 2018-03-23 2021-02-04 富士フイルム株式会社 Polishing liquid and chemical mechanical polishing method
JPWO2019181487A1 (en) * 2018-03-23 2021-03-11 富士フイルム株式会社 Polishing liquid and chemical mechanical polishing method
KR102576499B1 (en) * 2018-09-06 2023-09-07 동우 화인켐 주식회사 Silica Particles for CMP and Preparation Method thereof
US10464188B1 (en) * 2018-11-06 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad and polishing method
US10968366B2 (en) 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
US20200172759A1 (en) * 2018-12-04 2020-06-04 Cabot Microelectronics Corporation Composition and method for cobalt cmp
US12227673B2 (en) 2018-12-04 2025-02-18 Cmc Materials Llc Composition and method for silicon nitride CMP
US10676647B1 (en) 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
KR102759372B1 (en) 2019-01-08 2025-01-24 삼성전자주식회사 Etchant composition for silicon nitride and method of fabricating semiconductor device
JP7129548B2 (en) * 2019-03-06 2022-09-01 扶桑化学工業株式会社 Colloidal silica and method for producing the same
JP7119209B2 (en) * 2019-03-06 2022-08-16 扶桑化学工業株式会社 Colloidal silica and method for producing the same
JP7161428B2 (en) * 2019-03-14 2022-10-26 日揮触媒化成株式会社 Method for producing modified silica fine particle dispersion
US11189497B2 (en) * 2019-05-17 2021-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical mechanical planarization using nano-abrasive slurry
KR20220024083A (en) * 2019-06-27 2022-03-03 닛산 가가쿠 가부시키가이샤 Polishing composition using abrasive particles with high water affinity containing a basic substance
CN114761515B (en) * 2019-10-11 2023-06-23 圣戈班磨料磨具有限公司 Abrasive particles including coatings, abrasive articles including abrasive particles, and methods of forming
KR102670426B1 (en) * 2020-01-15 2024-06-03 오씨아이 주식회사 Method for separating and collecting single aggregate from fumed silica and method for classifying shape of single aggregate
KR20210095465A (en) * 2020-01-23 2021-08-02 삼성에스디아이 주식회사 Cmp slurry composition for polishing tungsten pattern wafer and method for polishing tungsten pattern wafer using the same
KR102678848B1 (en) * 2020-10-14 2024-06-26 삼성에스디아이 주식회사 Cmp slurry composition for polishing tungsten pattern wafer and method for polishing tungsten pattern wafer using the same
JP7435436B2 (en) * 2020-12-24 2024-02-21 株式会社Sumco How to polish carrier plate
CN113004804B (en) * 2021-03-01 2022-04-19 深圳清华大学研究院 Polishing solution for edge of large-size silicon wafer, preparation method of polishing solution and polishing method
KR20220131152A (en) * 2021-03-19 2022-09-27 가부시키가이샤 후지미인코퍼레이티드 Polishing composition, polishing method, and method for producing semiconductor substrate
KR102396281B1 (en) * 2021-04-14 2022-05-10 성균관대학교산학협력단 Polishing composition and method of producing the same
KR20220157873A (en) * 2021-05-21 2022-11-29 가부시키가이샤 후지미인코퍼레이티드 Method of preparing a polishing composition
CN113604154B (en) * 2021-07-09 2022-07-12 万华化学集团电子材料有限公司 Tungsten plug chemical mechanical polishing solution, preparation method and application thereof
TW202334371A (en) 2021-09-30 2023-09-01 日商福吉米股份有限公司 Polishing composition and polishing method using the same
WO2023171290A1 (en) * 2022-03-08 2023-09-14 株式会社フジミインコーポレーテッド Polishing composition
KR20240159126A (en) 2023-04-28 2024-11-05 에스케이엔펄스 주식회사 Polishing composition for semiconductor process and polishing method of substrate using the same
KR20250007832A (en) 2023-07-06 2025-01-14 에스케이엔펄스 주식회사 Polishing composition for semiconductor process and polishing method of substrate using the same

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
WO1998004646A1 (en) * 1996-07-25 1998-02-05 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
KR100447551B1 (en) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 Composite Particles and Production Process Thereof, Aqueous Dispersion, Aqueous Dispersion Composition for Chemical Mechanical Polishing, and Process for Manufacture of Semiconductor Apparatus
JP4041236B2 (en) * 1999-01-18 2008-01-30 株式会社東芝 Composite particle for chemical mechanical polishing used for manufacturing semiconductor device, method for manufacturing the same, and chemical mechanical polishing method using the same
EP1200532B1 (en) 1999-07-07 2006-08-30 Cabot Microelectronics Corporation Cmp composition containing silane modified abrasive particles
JP2002338232A (en) * 2001-05-18 2002-11-27 Nippon Chem Ind Co Ltd Secondary aggregated colloidal silica, method for producing the same, and abrasive composition using the same
JP4643085B2 (en) * 2001-09-19 2011-03-02 日本化学工業株式会社 Method for producing high-purity colloidal silica for abrasives
US7077880B2 (en) 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US7022255B2 (en) * 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
US7709053B2 (en) * 2004-07-29 2010-05-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of manufacturing of polymer-coated particles for chemical mechanical polishing
JP5345397B2 (en) * 2005-09-26 2013-11-20 プラナー ソリューションズ エルエルシー Ultra-pure colloidal silica for use in chemical mechanical polishing applications
US8961677B2 (en) * 2006-04-26 2015-02-24 Silbond Corporation Suspension of nanoparticles and method for making the same
CN101437918B (en) * 2006-05-02 2012-11-21 卡伯特微电子公司 Compositions and methods for cmp of semiconductor materials
US8106229B2 (en) * 2006-05-30 2012-01-31 Nalco Company Organically modifid silica and use thereof
US8759216B2 (en) * 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
JP5008350B2 (en) * 2006-07-05 2012-08-22 花王株式会社 Polishing liquid composition for glass substrate
DE102007012578A1 (en) * 2006-09-01 2008-03-06 Bühler PARTEC GmbH Cationically stabilized aqueous silica dispersion, process for their preparation and their use
US20080085412A1 (en) * 2006-10-04 2008-04-10 Ortiz C Yolanda Silica-coated metal oxide sols having variable metal oxide to silica ratio
KR100827591B1 (en) * 2006-11-27 2008-05-07 제일모직주식회사 Slurry composition for chemical mechanical polishing and precursor composition thereof
TW200837177A (en) * 2007-03-06 2008-09-16 Uwiz Technology Co Ltd Chemical mechanical polishing composition
US9550683B2 (en) * 2007-03-27 2017-01-24 Fuso Chemical Co., Ltd. Colloidal silica, and method for production thereof
JP2008288398A (en) * 2007-05-18 2008-11-27 Nippon Chem Ind Co Ltd Semiconductor wafer polishing composition, method for producing the same, and polishing method
JP5275595B2 (en) * 2007-08-29 2013-08-28 日本化学工業株式会社 Semiconductor wafer polishing composition and polishing method
US9028572B2 (en) * 2007-09-21 2015-05-12 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
MY147729A (en) 2007-09-21 2013-01-15 Cabot Microelectronics Corp Polishing composition and method utilizing abrasive particles treated with an aminosilane
JP5405024B2 (en) * 2008-02-04 2014-02-05 日本化学工業株式会社 Colloidal silica composed of silica particles with ethylenediamine immobilized
JP5441345B2 (en) * 2008-03-27 2014-03-12 富士フイルム株式会社 Polishing liquid and polishing method
JP5428205B2 (en) 2008-06-04 2014-02-26 日立化成株式会社 Polishing liquid for metal
CN102159662B (en) 2008-09-19 2014-05-21 卡伯特微电子公司 Barrier slurry for low-k dielectrics
WO2010035613A1 (en) * 2008-09-26 2010-04-01 扶桑化学工業株式会社 Colloidal silica containing silica secondary particles having bent structure and/or branched structure, and method for producing same
JP2010241642A (en) * 2009-04-07 2010-10-28 Nippon Chem Ind Co Ltd Colloidal silica
JP5554121B2 (en) * 2010-03-31 2014-07-23 富士フイルム株式会社 Polishing liquid and polishing method
JP2011216582A (en) 2010-03-31 2011-10-27 Fujifilm Corp Polishing method and polishing liquid
KR101243331B1 (en) * 2010-12-17 2013-03-13 솔브레인 주식회사 Chemical-mechanical polishing slurry composition and method for manufacturing semiconductor device by using the same
JP5613067B2 (en) * 2011-01-27 2014-10-22 日本化学工業株式会社 Semiconductor wafer polishing composition, method for producing the same, and polishing method
EP2602357A1 (en) * 2011-12-05 2013-06-12 Atotech Deutschland GmbH Novel adhesion promoting agents for metallization of substrate surfaces
CN103975001B (en) * 2011-12-21 2017-09-01 巴斯夫欧洲公司 Prepare the method and its application of CMP composition
KR101349758B1 (en) * 2011-12-26 2014-01-10 솔브레인 주식회사 Chemical-mechanical polishing slurry composition and method for manufacturing semiconductor device by using the same
JP5972660B2 (en) * 2012-03-28 2016-08-17 株式会社アドマテックス Method for producing colloidal silica and method for producing slurry for CMP
CN103865401A (en) * 2012-12-10 2014-06-18 安集微电子（上海）有限公司 Application of chemo-mechanical polishing liquid
US9309442B2 (en) * 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing

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