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SG10201700072UA - Wafer processing method - Google Patents

Wafer processing method

Info

Publication number
SG10201700072UA
SG10201700072UA SG10201700072UA SG10201700072UA SG10201700072UA SG 10201700072U A SG10201700072U A SG 10201700072UA SG 10201700072U A SG10201700072U A SG 10201700072UA SG 10201700072U A SG10201700072U A SG 10201700072UA SG 10201700072U A SG10201700072U A SG 10201700072UA
Authority
SG
Singapore
Prior art keywords
processing method
wafer processing
wafer
processing
Prior art date
Application number
SG10201700072UA
Inventor
Nakamura Masaru
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201700072UA publication Critical patent/SG10201700072UA/en

Links

Classifications

    • H10W42/121—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • H10P34/42—
    • H10P52/00—
    • H10P54/00—
    • H10P72/7402—
    • H10P90/123—
    • H10W10/00—
    • H10W10/01—
    • H10W46/00—
    • H10P72/7416—
    • H10P72/7422—
    • H10W46/503—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dicing (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
SG10201700072UA 2016-01-19 2017-01-05 Wafer processing method SG10201700072UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016007826A JP6608713B2 (en) 2016-01-19 2016-01-19 Wafer processing method

Publications (1)

Publication Number Publication Date
SG10201700072UA true SG10201700072UA (en) 2017-08-30

Family

ID=59314886

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201700072UA SG10201700072UA (en) 2016-01-19 2017-01-05 Wafer processing method

Country Status (6)

Country Link
US (1) US9768127B2 (en)
JP (1) JP6608713B2 (en)
KR (1) KR102519860B1 (en)
CN (1) CN106992151B (en)
SG (1) SG10201700072UA (en)
TW (1) TWI705486B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6633446B2 (en) 2016-04-27 2020-01-22 株式会社ディスコ Wafer processing method
JP6633447B2 (en) * 2016-04-27 2020-01-22 株式会社ディスコ Wafer processing method
JP6957185B2 (en) * 2017-04-17 2021-11-02 浜松ホトニクス株式会社 Processing object cutting method and semiconductor chip
JP6925945B2 (en) * 2017-11-30 2021-08-25 株式会社ディスコ Wafer processing method
CN109904296A (en) * 2017-12-08 2019-06-18 昱鑫制造股份有限公司 The cutting method and semiconductor packages unit that die-filling group of semiconductor package
DE102019207990B4 (en) * 2019-05-31 2024-03-21 Disco Corporation Method for machining a workpiece and system for machining a workpiece
KR102868185B1 (en) * 2019-08-16 2025-10-01 삼성전자주식회사 Semiconductor substrate and method of dicing the same
JP7486973B2 (en) * 2020-02-20 2024-05-20 株式会社ディスコ Wafer processing method
JP7370902B2 (en) * 2020-02-28 2023-10-30 株式会社ディスコ Crack detection method
JP7467208B2 (en) * 2020-04-06 2024-04-15 浜松ホトニクス株式会社 Laser processing device and laser processing method
JP7550635B2 (en) * 2020-12-22 2024-09-13 株式会社ディスコ Manufacturing method for device chips
JP2023130157A (en) * 2022-03-07 2023-09-20 株式会社ディスコ Wafer processing method

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408805B2 (en) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 Cutting origin region forming method and workpiece cutting method
JP4659300B2 (en) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 Laser processing method and semiconductor chip manufacturing method
JP2005332982A (en) * 2004-05-20 2005-12-02 Renesas Technology Corp Manufacturing method of semiconductor device
JP4733934B2 (en) * 2004-06-22 2011-07-27 株式会社ディスコ Wafer processing method
JP4816390B2 (en) 2005-11-16 2011-11-16 株式会社デンソー Semiconductor chip manufacturing method and semiconductor chip
JP2007165850A (en) 2005-11-16 2007-06-28 Denso Corp Wafer and wafer cutting method
JP4907984B2 (en) * 2005-12-27 2012-04-04 浜松ホトニクス株式会社 Laser processing method and semiconductor chip
EP1875983B1 (en) * 2006-07-03 2013-09-11 Hamamatsu Photonics K.K. Laser processing method and chip
JP5183892B2 (en) * 2006-07-03 2013-04-17 浜松ホトニクス株式会社 Laser processing method
JP2009124077A (en) 2007-11-19 2009-06-04 Denso Corp Semiconductor chip and its production process
JP5775265B2 (en) * 2009-08-03 2015-09-09 浜松ホトニクス株式会社 Laser processing method and semiconductor device manufacturing method
JP5389264B2 (en) * 2010-07-26 2014-01-15 浜松ホトニクス株式会社 Laser processing method
JP5707889B2 (en) * 2010-11-16 2015-04-30 株式会社東京精密 Semiconductor substrate cutting method and semiconductor substrate cutting apparatus
JP2014517543A (en) * 2011-06-15 2014-07-17 ソウル バイオシス カンパニー リミテッド Semiconductor light emitting device and manufacturing method thereof
JP5975763B2 (en) * 2012-07-05 2016-08-23 株式会社ディスコ Wafer processing method
JP2014041925A (en) * 2012-08-22 2014-03-06 Hamamatsu Photonics Kk Method for cutting workpiece
JP2014041924A (en) * 2012-08-22 2014-03-06 Hamamatsu Photonics Kk Method for cutting workpiece
JP2014091641A (en) 2012-11-01 2014-05-19 Hamamatsu Photonics Kk Laser processing method, and manufacturing method of electronic device
TW201540407A (en) * 2012-12-19 2015-11-01 Genesis Photonics Inc Method for treating wafer, laser cutting process and polishing process
JP2015130470A (en) 2013-12-05 2015-07-16 豊田合成株式会社 Group III nitride semiconductor light emitting device and method of manufacturing the same
WO2015175268A1 (en) * 2014-05-16 2015-11-19 Applied Materials, Inc. Hybrid wafer dicing approach using an ultra-short pulsed laguerre gauss beam laser scribing process and plasma etch process
JP6305853B2 (en) * 2014-07-08 2018-04-04 株式会社ディスコ Wafer processing method

Also Published As

Publication number Publication date
JP2017130516A (en) 2017-07-27
US9768127B2 (en) 2017-09-19
KR20170087018A (en) 2017-07-27
JP6608713B2 (en) 2019-11-20
TW201737322A (en) 2017-10-16
US20170207181A1 (en) 2017-07-20
KR102519860B1 (en) 2023-04-07
CN106992151A (en) 2017-07-28
CN106992151B (en) 2021-03-26
TWI705486B (en) 2020-09-21

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