[go: up one dir, main page]

SG10201608588SA - Susceptor For Holding A Semiconductor Wafer Having Orientation Notch, A Method For Depositing A Layer On A Semiconductor Wafer, And Semiconductor Wafer - Google Patents

Susceptor For Holding A Semiconductor Wafer Having Orientation Notch, A Method For Depositing A Layer On A Semiconductor Wafer, And Semiconductor Wafer

Info

Publication number
SG10201608588SA
SG10201608588SA SG10201608588SA SG10201608588SA SG10201608588SA SG 10201608588S A SG10201608588S A SG 10201608588SA SG 10201608588S A SG10201608588S A SG 10201608588SA SG 10201608588S A SG10201608588S A SG 10201608588SA SG 10201608588S A SG10201608588S A SG 10201608588SA
Authority
SG
Singapore
Prior art keywords
semiconductor wafer
susceptor
depositing
holding
layer
Prior art date
Application number
SG10201608588SA
Inventor
Reinhard Schauer
Christian Hager
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG10201608588SA publication Critical patent/SG10201608588SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02634—Homoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG10201608588SA 2015-10-27 2016-10-13 Susceptor For Holding A Semiconductor Wafer Having Orientation Notch, A Method For Depositing A Layer On A Semiconductor Wafer, And Semiconductor Wafer SG10201608588SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102015220924.5A DE102015220924B4 (en) 2015-10-27 2015-10-27 Susceptor for holding a semiconductor wafer with orientation notch, method for depositing a layer on a semiconductor wafer and semiconductor wafer

Publications (1)

Publication Number Publication Date
SG10201608588SA true SG10201608588SA (en) 2017-05-30

Family

ID=58490439

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201608588SA SG10201608588SA (en) 2015-10-27 2016-10-13 Susceptor For Holding A Semiconductor Wafer Having Orientation Notch, A Method For Depositing A Layer On A Semiconductor Wafer, And Semiconductor Wafer

Country Status (7)

Country Link
US (2) US9991208B2 (en)
JP (1) JP6333338B2 (en)
KR (1) KR101945025B1 (en)
CN (2) CN107034449B (en)
DE (1) DE102015220924B4 (en)
SG (1) SG10201608588SA (en)
TW (1) TWI588934B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015220924B4 (en) * 2015-10-27 2018-09-27 Siltronic Ag Susceptor for holding a semiconductor wafer with orientation notch, method for depositing a layer on a semiconductor wafer and semiconductor wafer
DE102015224933A1 (en) * 2015-12-11 2017-06-14 Siltronic Ag Monocrystalline semiconductor wafer and method for producing a semiconductor wafer
DE102017206671A1 (en) * 2017-04-20 2018-10-25 Siltronic Ag A susceptor for holding a wafer having an orientation notch during deposition of a film on a front side of the wafer and methods for depositing the film using the susceptor
CN108950680A (en) * 2018-08-09 2018-12-07 上海新昇半导体科技有限公司 Extension pedestal and epitaxial device
DE102019207772A1 (en) * 2019-05-28 2020-12-03 Siltronic Ag Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method
EP3957776A1 (en) * 2020-08-17 2022-02-23 Siltronic AG Method for depositing an epitaxial layer on a substrate wafer
EP3996130B1 (en) 2020-11-09 2023-03-08 Siltronic AG Method for depositing an epitaxial layer on a substrate wafer

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63244613A (en) * 1987-03-30 1988-10-12 Kyushu Denshi Kinzoku Kk Susceptor for vapor growth
JPH0529230A (en) 1991-07-22 1993-02-05 Toshiba Corp Vapor deposition device
JPH05275355A (en) * 1992-03-27 1993-10-22 Toshiba Corp Vapor growth device
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
KR100434790B1 (en) 1997-05-20 2004-06-07 동경 엘렉트론 주식회사 Processing apparatus
DE19847101C1 (en) 1998-10-13 2000-05-18 Wacker Siltronic Halbleitermat CVD reactor used in the production of the semiconductor wafers has upper and lower reactor chambers provided with a gas feed line and gas removal line
US6163015A (en) * 1999-07-21 2000-12-19 Moore Epitaxial, Inc. Substrate support element
JP2001110765A (en) * 1999-10-05 2001-04-20 Sumitomo Metal Ind Ltd High precision wafer and its manufacturing method
US7582221B2 (en) * 2000-10-26 2009-09-01 Shin-Etsu Handotai Co., Ltd. Wafer manufacturing method, polishing apparatus, and wafer
KR100937343B1 (en) 2001-11-30 2010-01-20 신에쯔 한도타이 가부시키가이샤 Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method and epitaxial wafer
JP4093793B2 (en) * 2002-04-30 2008-06-04 信越半導体株式会社 Semiconductor wafer manufacturing method and wafer
JP3769262B2 (en) * 2002-12-20 2006-04-19 株式会社東芝 Wafer flatness evaluation method, wafer flatness evaluation apparatus for executing the evaluation method, wafer manufacturing method using the evaluation method, wafer quality assurance method using the evaluation method, and semiconductor device manufacturing using the evaluation method And method for manufacturing semiconductor device using wafer evaluated by the evaluation method
JP4304720B2 (en) * 2004-07-30 2009-07-29 信越半導体株式会社 Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing method, and epitaxial wafer
JP2006186105A (en) * 2004-12-27 2006-07-13 Steady Design Ltd Epitaxial growth device and susceptor used therefor
DE102005045337B4 (en) 2005-09-22 2008-08-21 Siltronic Ag Epitaxial silicon wafer and process for producing epitaxially coated silicon wafers
DE102005045338B4 (en) * 2005-09-22 2009-04-02 Siltronic Ag Epitaxial silicon wafer and process for producing epitaxially coated silicon wafers
DE102005045339B4 (en) * 2005-09-22 2009-04-02 Siltronic Ag Epitaxial silicon wafer and process for producing epitaxially coated silicon wafers
TWI354320B (en) * 2006-02-21 2011-12-11 Nuflare Technology Inc Vopor phase deposition apparatus and support table
DE102006055038B4 (en) 2006-11-22 2012-12-27 Siltronic Ag An epitaxated semiconductor wafer and apparatus and method for producing an epitaxied semiconductor wafer
US20090242126A1 (en) * 2008-03-31 2009-10-01 Memc Electronic Materials, Inc. Edge etching apparatus for etching the edge of a silicon wafer
CN101572229A (en) * 2008-04-28 2009-11-04 北大方正集团有限公司 Method for flattening surface of polysilicon
JP5584959B2 (en) * 2008-05-07 2014-09-10 株式会社Ｓｕｍｃｏ Silicon wafer manufacturing method
JP5098873B2 (en) 2008-07-30 2012-12-12 株式会社Ｓｕｍｃｏ Susceptor and vapor phase growth apparatus for vapor phase growth apparatus
JP5092975B2 (en) * 2008-07-31 2012-12-05 株式会社Ｓｕｍｃｏ Epitaxial wafer manufacturing method
WO2010025334A2 (en) * 2008-08-28 2010-03-04 Kla-Tencor Corporation Localized substrate geometry characterization
DE102009030296B4 (en) * 2009-06-24 2013-05-08 Siltronic Ag Process for producing an epitaxially coated silicon wafer
US8952496B2 (en) * 2009-12-24 2015-02-10 Sumco Corporation Semiconductor wafer and method of producing same
JP5423384B2 (en) * 2009-12-24 2014-02-19 株式会社Ｓｕｍｃｏ Semiconductor wafer and manufacturing method thereof
JP2011171450A (en) * 2010-02-17 2011-09-01 Nuflare Technology Inc Film deposition apparatus and method
US8324098B2 (en) * 2010-07-08 2012-12-04 National Semiconductor Corporation Via and method of forming the via with a substantially planar top surface that is suitable for carbon nanotube applications
JP5644401B2 (en) 2010-11-15 2014-12-24 株式会社Sumco Epitaxial wafer manufacturing method and epitaxial wafer
KR20120123207A (en) * 2011-04-19 2012-11-08 실트로닉 아게 Susceptor for supporting a semiconductor wafer and method for depositing a layer on a front side of a semiconductor wafer
DE102011007682A1 (en) 2011-04-19 2012-10-25 Siltronic Ag Susceptor for supporting a semiconductor wafer and method for depositing a layer on a front side of a semiconductor wafer
JP5621702B2 (en) * 2011-04-26 2014-11-12 信越半導体株式会社 Semiconductor wafer and manufacturing method thereof
JP5834632B2 (en) 2011-08-30 2015-12-24 株式会社Sumco Susceptor, vapor phase growth apparatus using the susceptor, and epitaxial wafer manufacturing method
JP5741497B2 (en) * 2012-02-15 2015-07-01 信越半導体株式会社 Wafer double-side polishing method
US20130263779A1 (en) * 2012-04-10 2013-10-10 Memc Electronic Materials, Inc. Susceptor For Improved Epitaxial Wafer Flatness
JP6312976B2 (en) * 2012-06-12 2018-04-18 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Manufacturing method of semiconductor wafer
JP6035982B2 (en) * 2012-08-09 2016-11-30 株式会社Sumco Epitaxial silicon wafer manufacturing method and epitaxial silicon wafer
DE102013218880A1 (en) * 2012-11-20 2014-05-22 Siltronic Ag A method of polishing a semiconductor wafer, comprising simultaneously polishing a front side and a back side of a substrate wafer
JP6013155B2 (en) * 2012-11-28 2016-10-25 大陽日酸株式会社 Vapor growth equipment
CN103854965B (en) * 2012-11-30 2017-03-01 中国科学院微电子研究所 planarization processing method
KR102144758B1 (en) * 2013-08-09 2020-08-14 가부시키가이샤 후지미인코퍼레이티드 Method for producing polished object and composition kit for polishing
DE102015220924B4 (en) * 2015-10-27 2018-09-27 Siltronic Ag Susceptor for holding a semiconductor wafer with orientation notch, method for depositing a layer on a semiconductor wafer and semiconductor wafer
JP6838992B2 (en) * 2017-02-21 2021-03-03 株式会社Ｓｃｒｅｅｎホールディングス Heat treatment equipment and heat treatment method

Also Published As

Publication number Publication date
JP2017085094A (en) 2017-05-18
DE102015220924B4 (en) 2018-09-27
TW201715641A (en) 2017-05-01
US20180211923A1 (en) 2018-07-26
JP6333338B2 (en) 2018-05-30
KR20170049418A (en) 2017-05-10
KR101945025B1 (en) 2019-02-01
US11380621B2 (en) 2022-07-05
US20170117228A1 (en) 2017-04-27
CN109881183A (en) 2019-06-14
US9991208B2 (en) 2018-06-05
CN107034449B (en) 2019-09-10
DE102015220924A1 (en) 2017-04-27
CN109881183B (en) 2021-03-30
CN107034449A (en) 2017-08-11
TWI588934B (en) 2017-06-21

Similar Documents

Publication Publication Date Title
SG10201608588SA (en) Susceptor For Holding A Semiconductor Wafer Having Orientation Notch, A Method For Depositing A Layer On A Semiconductor Wafer, And Semiconductor Wafer
IL265746B1 (en) Methods and systems for chucking a warped wafer
EP3349237A4 (en) METHOD FOR MANUFACTURING SiC COMPOSITE SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
SG11201710300SA (en) Substrate holding device, film deposition device, and substrate holding method
SG10201710235VA (en) Optoelectronic modules having a silicon substrate, and fabrication methods for such modules
EP3128047A4 (en) METHOD FOR REMOVING WORK-AFFECTED LAYER ON SiC SEED CRYSTAL, SiC SEED CRYSTAL, AND SiC SUBSTRATE MANUFACTURING METHOD
EP3125297A4 (en) Silicon carbide semiconductor device, and method for manufacturing same
GB2540033C (en) Method of manufacturing a holding plate, in particular for a clamp for holding wafers
EP3128535A4 (en) SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEMICONDUCTOR PRODUCTION METHOD
SG11201701661UA (en) Method for processing semiconductor wafer, method for manufacturing bonded wafer, and method for manufacturing epitaxial wafer
EP3396703A4 (en) Wafer supporting mechanism, chemical vapor deposition apparatus, and epitaxial wafer manufacturing method
SG11201610457YA (en) Wafer chuck, device and method for detaching a substrate
IL275116A (en) Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method
SG11201605542RA (en) Semiconductor substrate, semiconductor device and manufacturing method for semiconductor substrate
EP3197251A4 (en) Layered body, substrate for semiconductor element mounting, and method for manufacturing said body and substrate
HUE047589T2 (en) Method for producing a substrate adapter, substrate adapter and method for contacting a semiconductor element
SG11202001426UA (en) A Compound Semiconductor Substrate, A Pellicle Film, And A Method For Manufacturing A Compound Semiconductor Substrate
SG10202013142QA (en) Semiconductor manufacturing parts comprising sic deposition layer, and manufacturing method therefor
EP3879010A4 (en) Sic semiconductor substrate, and, production method therefor and production device therefor
EP3203528A4 (en) Silicon carbide semiconductor device, method for manufacturing silicon carbide semiconductor device, and method for designing silicon carbide semiconductor device
EP3366817A4 (en) Base substrate, method for manufacturing base substrate, and method for manufacturing group 13 nitride crystal
SG10201907085QA (en) Semiconductor substrate processing method
EP3141635A4 (en) Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer
EP3480843A4 (en) Method for manufacturing package substrate for carrying semiconductor element, and method for manufacturing semiconductor element-mounted substrate
SG11201705935YA (en) Epitaxially coated semiconductor wafer, and method for producing an epitaxially coated semiconductor wafer