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SG10201501328WA - Controlled ambient system for interface engineering - Google Patents

Controlled ambient system for interface engineering

Info

Publication number
SG10201501328WA
SG10201501328WA SG10201501328WA SG10201501328WA SG10201501328WA SG 10201501328W A SG10201501328W A SG 10201501328WA SG 10201501328W A SG10201501328W A SG 10201501328WA SG 10201501328W A SG10201501328W A SG 10201501328WA SG 10201501328W A SG10201501328W A SG 10201501328WA
Authority
SG
Singapore
Prior art keywords
controlled ambient
interface engineering
ambient system
engineering
interface
Prior art date
Application number
SG10201501328WA
Inventor
John Boyd
Yezdi Dordi
Tiruchirapalli Arunagiri
Benjamin W Mooring
John Parks
William Thie
Fritz C Redeker
Arthur M Howald
Alan Schoepp
David Hemker
Woods Carl
Alexander Yoon Hyungsuk
Owczarz Aleksander
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/513,634 external-priority patent/US8771804B2/en
Priority claimed from US11/639,752 external-priority patent/US9117860B2/en
Priority claimed from US11/611,758 external-priority patent/US20080057182A1/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201501328WA publication Critical patent/SG10201501328WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Chemically Coating (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
SG10201501328WA 2006-08-30 2007-08-28 Controlled ambient system for interface engineering SG10201501328WA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/513,634 US8771804B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a copper surface for selective metal deposition
US11/639,752 US9117860B2 (en) 2006-08-30 2006-12-15 Controlled ambient system for interface engineering
US11/611,758 US20080057182A1 (en) 2006-08-30 2006-12-15 Method for gap fill in controlled ambient system

Publications (1)

Publication Number Publication Date
SG10201501328WA true SG10201501328WA (en) 2015-04-29

Family

ID=39136542

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2011062171A SG174750A1 (en) 2006-08-30 2007-08-28 Controlled ambient system for interface engineering
SG10201501328WA SG10201501328WA (en) 2006-08-30 2007-08-28 Controlled ambient system for interface engineering

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2011062171A SG174750A1 (en) 2006-08-30 2007-08-28 Controlled ambient system for interface engineering

Country Status (6)

Country Link
JP (1) JP5417174B2 (en)
KR (2) KR101423350B1 (en)
CN (2) CN101529556B (en)
SG (2) SG174750A1 (en)
TW (1) TWI447831B (en)
WO (1) WO2008027386A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101423350B1 (en) * 2006-08-30 2014-07-24 램 리써치 코포레이션 Control atmosphere system for interface machining
US9865501B2 (en) * 2013-03-06 2018-01-09 Lam Research Corporation Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer
TWI584370B (en) * 2013-08-27 2017-05-21 Tokyo Electron Ltd A substrate processing method, a substrate processing apparatus, and a memory medium
US10026649B2 (en) * 2014-12-23 2018-07-17 Intel Corporation Decoupled via fill
US10249521B2 (en) * 2016-03-17 2019-04-02 Lam Research Ag Wet-dry integrated wafer processing system
US10443146B2 (en) 2017-03-30 2019-10-15 Lam Research Corporation Monitoring surface oxide on seed layers during electroplating
US10770314B2 (en) * 2017-05-31 2020-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, tool, and method of manufacturing
JP6538894B2 (en) * 2018-01-10 2019-07-03 エーファウ・グループ・エー・タルナー・ゲーエムベーハー How to bond substrates together
JP2019192892A (en) 2018-04-18 2019-10-31 東京エレクトロン株式会社 Processing system and processing method
EP4545685A1 (en) * 2023-10-23 2025-04-30 Umicore Battery Materials Finland Oy A method for controlling atmosphere of a reaction vessel, a method for precipitating particles, and a system for controlling atmosphere of a reaction vessel

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5627105A (en) * 1993-04-08 1997-05-06 Varian Associates, Inc. Plasma etch process and TiSix layers made using the process
JPH088318A (en) * 1994-06-16 1996-01-12 Hitachi Ltd Semiconductor manufacturing equipment
US5935395A (en) * 1995-11-08 1999-08-10 Mitel Corporation Substrate processing apparatus with non-evaporable getter pump
JPH09275142A (en) * 1995-12-12 1997-10-21 Texas Instr Inc <Ti> Method for filling cavity of semiconductor at low temperature and low pressure
US6017820A (en) * 1998-07-17 2000-01-25 Cutek Research, Inc. Integrated vacuum and plating cluster system
US6319831B1 (en) * 1999-03-18 2001-11-20 Taiwan Semiconductor Manufacturing Company Gap filling by two-step plating
US6337289B1 (en) * 1999-09-24 2002-01-08 Applied Materials. Inc Method and apparatus for integrating a metal nitride film in a semiconductor device
US6423200B1 (en) * 1999-09-30 2002-07-23 Lam Research Corporation Copper interconnect seed layer treatment methods and apparatuses for treating the same
US20030116427A1 (en) * 2001-08-30 2003-06-26 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
EP1094504A3 (en) * 1999-10-18 2001-08-22 Applied Materials, Inc. PVD-IMP tungsten and tungsten nitride as a liner, barrier, and/or seed layer
JP2001196373A (en) * 2000-01-13 2001-07-19 Mitsubishi Electric Corp Producing method for semiconductor device and semiconductor device
JP3907151B2 (en) * 2000-01-25 2007-04-18 株式会社東芝 Manufacturing method of semiconductor device
US6777327B2 (en) * 2001-03-28 2004-08-17 Sharp Laboratories Of America, Inc. Method of barrier metal surface treatment prior to Cu deposition to improve adhesion and trench filling characteristics
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6936906B2 (en) * 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
JP3588612B2 (en) * 2002-02-19 2004-11-17 株式会社東芝 Semiconductor device
US7067897B2 (en) * 2002-02-19 2006-06-27 Kabushiki Kaisha Toshiba Semiconductor device
US20040040504A1 (en) * 2002-08-01 2004-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
FR2851258B1 (en) * 2003-02-17 2007-03-30 Commissariat Energie Atomique METHOD OF COATING A SURFACE, FABRICATION OF MICROELECTRONIC INTERCONNECTION USING THE SAME, AND INTEGRATED CIRCUITS
KR101177576B1 (en) * 2003-06-13 2012-08-27 어플라이드 머티어리얼스, 인코포레이티드 Integration of ald tantalum nitride for copper metallization
US20060033678A1 (en) * 2004-01-26 2006-02-16 Applied Materials, Inc. Integrated electroless deposition system
US7118966B2 (en) * 2004-08-23 2006-10-10 Micron Technology, Inc. Methods of forming conductive lines
JP4773521B2 (en) * 2006-08-22 2011-09-14 株式会社エヌ・ティ・ティ・ドコモ Radio resource release control method, radio base station, and mobile station
KR101423350B1 (en) * 2006-08-30 2014-07-24 램 리써치 코포레이션 Control atmosphere system for interface machining

Also Published As

Publication number Publication date
CN102347210A (en) 2012-02-08
KR101455955B1 (en) 2014-10-31
KR20140002811A (en) 2014-01-08
CN101529556B (en) 2012-05-30
WO2008027386A3 (en) 2008-08-21
JP5417174B2 (en) 2014-02-12
TW200832586A (en) 2008-08-01
JP2010503210A (en) 2010-01-28
KR101423350B1 (en) 2014-07-24
CN101529556A (en) 2009-09-09
TWI447831B (en) 2014-08-01
KR20090069278A (en) 2009-06-30
WO2008027386A2 (en) 2008-03-06
SG174750A1 (en) 2011-10-28
CN102347210B (en) 2015-08-05

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