SG10201501328WA - Controlled ambient system for interface engineering - Google Patents
Controlled ambient system for interface engineeringInfo
- Publication number
- SG10201501328WA SG10201501328WA SG10201501328WA SG10201501328WA SG10201501328WA SG 10201501328W A SG10201501328W A SG 10201501328WA SG 10201501328W A SG10201501328W A SG 10201501328WA SG 10201501328W A SG10201501328W A SG 10201501328WA SG 10201501328W A SG10201501328W A SG 10201501328WA
- Authority
- SG
- Singapore
- Prior art keywords
- controlled ambient
- interface engineering
- ambient system
- engineering
- interface
- Prior art date
Links
Classifications
-
- H10P72/0461—
-
- H10P14/20—
-
- H10P72/0402—
-
- H10P72/0468—
-
- H10P72/3304—
-
- H10P95/00—
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/513,634 US8771804B2 (en) | 2005-08-31 | 2006-08-30 | Processes and systems for engineering a copper surface for selective metal deposition |
| US11/639,752 US9117860B2 (en) | 2006-08-30 | 2006-12-15 | Controlled ambient system for interface engineering |
| US11/611,758 US20080057182A1 (en) | 2006-08-30 | 2006-12-15 | Method for gap fill in controlled ambient system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201501328WA true SG10201501328WA (en) | 2015-04-29 |
Family
ID=39136542
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011062171A SG174750A1 (en) | 2006-08-30 | 2007-08-28 | Controlled ambient system for interface engineering |
| SG10201501328WA SG10201501328WA (en) | 2006-08-30 | 2007-08-28 | Controlled ambient system for interface engineering |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011062171A SG174750A1 (en) | 2006-08-30 | 2007-08-28 | Controlled ambient system for interface engineering |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP5417174B2 (en) |
| KR (2) | KR101455955B1 (en) |
| CN (2) | CN101529556B (en) |
| SG (2) | SG174750A1 (en) |
| TW (1) | TWI447831B (en) |
| WO (1) | WO2008027386A2 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101455955B1 (en) * | 2006-08-30 | 2014-10-31 | 램 리써치 코포레이션 | Controlled ambient system for interface engineering |
| US9865501B2 (en) * | 2013-03-06 | 2018-01-09 | Lam Research Corporation | Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer |
| TWI584370B (en) * | 2013-08-27 | 2017-05-21 | 東京威力科創股份有限公司 | A substrate processing method, a substrate processing apparatus, and a memory medium |
| KR20170095829A (en) * | 2014-12-23 | 2017-08-23 | 인텔 코포레이션 | Decoupled via fill |
| US10249521B2 (en) * | 2016-03-17 | 2019-04-02 | Lam Research Ag | Wet-dry integrated wafer processing system |
| US10443146B2 (en) | 2017-03-30 | 2019-10-15 | Lam Research Corporation | Monitoring surface oxide on seed layers during electroplating |
| US10770314B2 (en) | 2017-05-31 | 2020-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, tool, and method of manufacturing |
| JP6538894B2 (en) * | 2018-01-10 | 2019-07-03 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | How to bond substrates together |
| JP2019192892A (en) | 2018-04-18 | 2019-10-31 | 東京エレクトロン株式会社 | Processing system and processing method |
| EP4545685A1 (en) * | 2023-10-23 | 2025-04-30 | Umicore Battery Materials Finland Oy | A method for controlling atmosphere of a reaction vessel, a method for precipitating particles, and a system for controlling atmosphere of a reaction vessel |
| CN120376473B (en) * | 2025-06-26 | 2025-09-23 | 昆山科比精工设备有限公司 | A transfer device for silicon wafer copper plating pretreatment |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5627105A (en) * | 1993-04-08 | 1997-05-06 | Varian Associates, Inc. | Plasma etch process and TiSix layers made using the process |
| JPH088318A (en) * | 1994-06-16 | 1996-01-12 | Hitachi Ltd | Semiconductor manufacturing equipment |
| US5935395A (en) * | 1995-11-08 | 1999-08-10 | Mitel Corporation | Substrate processing apparatus with non-evaporable getter pump |
| JPH09275142A (en) * | 1995-12-12 | 1997-10-21 | Texas Instr Inc <Ti> | Processing method for filling semiconductor voids at low temperature and low pressure |
| US6017820A (en) * | 1998-07-17 | 2000-01-25 | Cutek Research, Inc. | Integrated vacuum and plating cluster system |
| US6319831B1 (en) * | 1999-03-18 | 2001-11-20 | Taiwan Semiconductor Manufacturing Company | Gap filling by two-step plating |
| US6337289B1 (en) * | 1999-09-24 | 2002-01-08 | Applied Materials. Inc | Method and apparatus for integrating a metal nitride film in a semiconductor device |
| US6423200B1 (en) * | 1999-09-30 | 2002-07-23 | Lam Research Corporation | Copper interconnect seed layer treatment methods and apparatuses for treating the same |
| US20030116427A1 (en) * | 2001-08-30 | 2003-06-26 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
| EP1094504A3 (en) * | 1999-10-18 | 2001-08-22 | Applied Materials, Inc. | PVD-IMP tungsten and tungsten nitride as a liner, barrier, and/or seed layer |
| JP2001196373A (en) * | 2000-01-13 | 2001-07-19 | Mitsubishi Electric Corp | Semiconductor device manufacturing method and semiconductor device |
| JP3907151B2 (en) * | 2000-01-25 | 2007-04-18 | 株式会社東芝 | Manufacturing method of semiconductor device |
| US6777327B2 (en) * | 2001-03-28 | 2004-08-17 | Sharp Laboratories Of America, Inc. | Method of barrier metal surface treatment prior to Cu deposition to improve adhesion and trench filling characteristics |
| US6936906B2 (en) * | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US7049226B2 (en) * | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US7067897B2 (en) * | 2002-02-19 | 2006-06-27 | Kabushiki Kaisha Toshiba | Semiconductor device |
| JP3588612B2 (en) | 2002-02-19 | 2004-11-17 | 株式会社東芝 | Semiconductor device |
| US20040040504A1 (en) * | 2002-08-01 | 2004-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
| US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
| FR2851258B1 (en) * | 2003-02-17 | 2007-03-30 | Commissariat Energie Atomique | METHOD OF COATING A SURFACE, FABRICATION OF MICROELECTRONIC INTERCONNECTION USING THE SAME, AND INTEGRATED CIRCUITS |
| KR101177576B1 (en) * | 2003-06-13 | 2012-08-27 | 어플라이드 머티어리얼스, 인코포레이티드 | Integration of ald tantalum nitride for copper metallization |
| US20060033678A1 (en) * | 2004-01-26 | 2006-02-16 | Applied Materials, Inc. | Integrated electroless deposition system |
| US7118966B2 (en) * | 2004-08-23 | 2006-10-10 | Micron Technology, Inc. | Methods of forming conductive lines |
| WO2008023649A1 (en) * | 2006-08-22 | 2008-02-28 | Ntt Docomo, Inc. | Radio resource opening/controlling method, radio base station and mobile station |
| KR101455955B1 (en) * | 2006-08-30 | 2014-10-31 | 램 리써치 코포레이션 | Controlled ambient system for interface engineering |
-
2007
- 2007-08-28 KR KR1020137032044A patent/KR101455955B1/en active Active
- 2007-08-28 CN CN2007800402135A patent/CN101529556B/en active Active
- 2007-08-28 SG SG2011062171A patent/SG174750A1/en unknown
- 2007-08-28 SG SG10201501328WA patent/SG10201501328WA/en unknown
- 2007-08-28 WO PCT/US2007/018924 patent/WO2008027386A2/en not_active Ceased
- 2007-08-28 JP JP2009526680A patent/JP5417174B2/en active Active
- 2007-08-28 KR KR1020097006393A patent/KR101423350B1/en active Active
- 2007-08-28 CN CN201110044283.6A patent/CN102347210B/en active Active
- 2007-08-29 TW TW096131993A patent/TWI447831B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI447831B (en) | 2014-08-01 |
| SG174750A1 (en) | 2011-10-28 |
| JP2010503210A (en) | 2010-01-28 |
| CN102347210B (en) | 2015-08-05 |
| KR20090069278A (en) | 2009-06-30 |
| KR101423350B1 (en) | 2014-07-24 |
| KR101455955B1 (en) | 2014-10-31 |
| CN101529556B (en) | 2012-05-30 |
| KR20140002811A (en) | 2014-01-08 |
| CN102347210A (en) | 2012-02-08 |
| WO2008027386A3 (en) | 2008-08-21 |
| TW200832586A (en) | 2008-08-01 |
| WO2008027386A2 (en) | 2008-03-06 |
| JP5417174B2 (en) | 2014-02-12 |
| CN101529556A (en) | 2009-09-09 |
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