SG10201404989SA - System, method and apparatus for coordinating pressure pulses and rf modulation in a small volume confined process reactor - Google Patents
System, method and apparatus for coordinating pressure pulses and rf modulation in a small volume confined process reactorInfo
- Publication number
- SG10201404989SA SG10201404989SA SG10201404989SA SG10201404989SA SG10201404989SA SG 10201404989S A SG10201404989S A SG 10201404989SA SG 10201404989S A SG10201404989S A SG 10201404989SA SG 10201404989S A SG10201404989S A SG 10201404989SA SG 10201404989S A SG10201404989S A SG 10201404989SA
- Authority
- SG
- Singapore
- Prior art keywords
- modulation
- small volume
- pressure pulses
- process reactor
- volume confined
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/016,994 US9184029B2 (en) | 2013-09-03 | 2013-09-03 | System, method and apparatus for coordinating pressure pulses and RF modulation in a small volume confined process reactor |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201404989SA true SG10201404989SA (en) | 2015-04-29 |
Family
ID=52581682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201404989SA SG10201404989SA (en) | 2013-09-03 | 2014-08-18 | System, method and apparatus for coordinating pressure pulses and rf modulation in a small volume confined process reactor |
Country Status (6)
Country | Link |
---|---|
US (2) | US9184029B2 (en) |
JP (1) | JP6599086B2 (en) |
KR (1) | KR102105214B1 (en) |
CN (1) | CN104425324B (en) |
SG (1) | SG10201404989SA (en) |
TW (1) | TWI646571B (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9299574B2 (en) | 2013-01-25 | 2016-03-29 | Applied Materials, Inc. | Silicon dioxide-polysilicon multi-layered stack etching with plasma etch chamber employing non-corrosive etchants |
US9330927B2 (en) * | 2013-08-28 | 2016-05-03 | Lam Research Corporation | System, method and apparatus for generating pressure pulses in small volume confined process reactor |
JP6570993B2 (en) * | 2015-12-16 | 2019-09-04 | 東京エレクトロン株式会社 | Plasma processing equipment |
CN108780735B (en) * | 2016-03-13 | 2023-04-21 | 应用材料公司 | Selective Deposition of Silicon Nitride Films for Spacer Applications |
JP6749268B2 (en) * | 2017-03-07 | 2020-09-02 | 東京エレクトロン株式会社 | Substrate processing equipment |
KR102449621B1 (en) * | 2017-08-22 | 2022-09-30 | 삼성전자주식회사 | Shroud unit and substrate processing apparatus including same |
JP2019075517A (en) * | 2017-10-19 | 2019-05-16 | 東京エレクトロン株式会社 | Processing device and member having diffusion path |
JP6967954B2 (en) * | 2017-12-05 | 2021-11-17 | 東京エレクトロン株式会社 | Exhaust device, processing device and exhaust method |
CN109994357B (en) * | 2017-12-29 | 2021-07-27 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
US11515128B2 (en) * | 2018-08-28 | 2022-11-29 | Lam Research Corporation | Confinement ring with extended life |
US12354847B2 (en) * | 2020-03-12 | 2025-07-08 | Applied Materials, Inc. | Methods and apparatus for conductance liners in semiconductor process chambers |
US11380524B2 (en) | 2020-03-19 | 2022-07-05 | Applied Materials, Inc. | Low resistance confinement liner for use in plasma chamber |
USD979524S1 (en) | 2020-03-19 | 2023-02-28 | Applied Materials, Inc. | Confinement liner for a substrate processing chamber |
USD943539S1 (en) | 2020-03-19 | 2022-02-15 | Applied Materials, Inc. | Confinement plate for a substrate processing chamber |
CN113838730B (en) * | 2020-06-08 | 2024-05-14 | 中微半导体设备(上海)股份有限公司 | Gas shielding ring, plasma processing device and method for regulating and controlling polymer distribution |
KR102805979B1 (en) * | 2020-11-19 | 2025-05-13 | (주)아이씨디 | Pressure Control Device and Control Method of Plasma Processing Device |
JP7561067B2 (en) * | 2021-03-17 | 2024-10-03 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
JP7682040B2 (en) | 2021-06-21 | 2025-05-23 | 東京エレクトロン株式会社 | Plasma Processing Equipment |
JP7462728B2 (en) * | 2021-10-26 | 2024-04-05 | 東京エレクトロン株式会社 | Plasma Processing Equipment |
DE102023124377A1 (en) * | 2023-09-11 | 2025-03-13 | Eltro Gmbh | Process for surface coating based on the sputtering principle |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4466380A (en) * | 1983-01-10 | 1984-08-21 | Xerox Corporation | Plasma deposition apparatus for photoconductive drums |
JPH0770526B2 (en) * | 1987-09-14 | 1995-07-31 | 富士通株式会社 | Decompression processing device |
JPS6476319A (en) | 1987-09-18 | 1989-03-22 | Matsushita Electric Ind Co Ltd | Data arranging circuit |
US5000225A (en) * | 1989-11-17 | 1991-03-19 | Applied Materials, Inc. | Low profile, combination throttle/gate valve for a multi-pump chamber |
US5758680A (en) * | 1996-03-29 | 1998-06-02 | Lam Research Corporation | Method and apparatus for pressure control in vacuum processors |
US6123097A (en) * | 1996-06-28 | 2000-09-26 | Applied Materials, Inc. | Apparatus and methods for controlling process chamber pressure |
US5871813A (en) * | 1997-03-05 | 1999-02-16 | Applied Materials, Inc. | Apparatus and method for controlling process chamber pressure |
WO1999014699A1 (en) * | 1997-09-17 | 1999-03-25 | Tokyo Electron Limited | System and method for monitoring and controlling gas plasma processes |
US5997589A (en) | 1998-07-09 | 1999-12-07 | Winbond Electronics Corp. | Adjustment pumping plate design for the chamber of semiconductor equipment |
JP4425370B2 (en) * | 1999-04-28 | 2010-03-03 | 株式会社半導体エネルギー研究所 | Dry etching method and plasma ashing method |
JP4592856B2 (en) * | 1999-12-24 | 2010-12-08 | 東京エレクトロン株式会社 | Baffle plate and gas treatment device |
US6261408B1 (en) * | 2000-02-16 | 2001-07-17 | Applied Materials, Inc. | Method and apparatus for semiconductor processing chamber pressure control |
US6800173B2 (en) * | 2000-12-15 | 2004-10-05 | Novellus Systems, Inc. | Variable gas conductance control for a process chamber |
JP4791636B2 (en) * | 2001-01-15 | 2011-10-12 | 日華化学株式会社 | Hybrid pulse plasma deposition system |
US6852242B2 (en) * | 2001-02-23 | 2005-02-08 | Zhi-Wen Sun | Cleaning of multicompositional etchant residues |
JP2002270598A (en) * | 2001-03-13 | 2002-09-20 | Tokyo Electron Ltd | Plasma treating apparatus |
US6974523B2 (en) * | 2001-05-16 | 2005-12-13 | Lam Research Corporation | Hollow anode plasma reactor and method |
JP3646292B2 (en) * | 2001-07-17 | 2005-05-11 | 学校法人金沢工業大学 | Object processing method and apparatus |
US7294580B2 (en) * | 2003-04-09 | 2007-11-13 | Lam Research Corporation | Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition |
US20060000799A1 (en) * | 2004-06-30 | 2006-01-05 | Hyun-Ho Doh | Methods and apparatus for determining endpoint in a plasma processing system |
US7381644B1 (en) * | 2005-12-23 | 2008-06-03 | Novellus Systems, Inc. | Pulsed PECVD method for modulating hydrogen content in hard mask |
US8043430B2 (en) * | 2006-12-20 | 2011-10-25 | Lam Research Corporation | Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber |
WO2009148913A2 (en) * | 2008-06-02 | 2009-12-10 | Mattson Technology, Inc. | Process and system for varying the exposure to a chemical ambient in a process chamber |
US8627783B2 (en) * | 2008-12-19 | 2014-01-14 | Lam Research Corporation | Combined wafer area pressure control and plasma confinement assembly |
US8809196B2 (en) * | 2009-01-14 | 2014-08-19 | Tokyo Electron Limited | Method of etching a thin film using pressure modulation |
JP5059792B2 (en) * | 2009-01-26 | 2012-10-31 | 東京エレクトロン株式会社 | Plasma processing equipment |
CN102763198B (en) * | 2009-09-25 | 2015-05-06 | 应用材料公司 | Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor |
US8808561B2 (en) * | 2011-11-15 | 2014-08-19 | Lam Research Coporation | Inert-dominant pulsing in plasma processing systems |
-
2013
- 2013-09-03 US US14/016,994 patent/US9184029B2/en active Active
-
2014
- 2014-08-18 SG SG10201404989SA patent/SG10201404989SA/en unknown
- 2014-08-26 JP JP2014171041A patent/JP6599086B2/en active Active
- 2014-09-02 TW TW103130308A patent/TWI646571B/en active
- 2014-09-03 CN CN201410444122.XA patent/CN104425324B/en active Active
- 2014-09-03 KR KR1020140116686A patent/KR102105214B1/en active Active
-
2015
- 2015-10-19 US US14/887,106 patent/US10636625B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20150027007A (en) | 2015-03-11 |
US20160042921A1 (en) | 2016-02-11 |
US10636625B2 (en) | 2020-04-28 |
TWI646571B (en) | 2019-01-01 |
US9184029B2 (en) | 2015-11-10 |
TW201521077A (en) | 2015-06-01 |
US20150060404A1 (en) | 2015-03-05 |
KR102105214B1 (en) | 2020-04-28 |
CN104425324A (en) | 2015-03-18 |
JP2015062225A (en) | 2015-04-02 |
CN104425324B (en) | 2017-10-03 |
JP6599086B2 (en) | 2019-10-30 |
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