SG101917A1 - Pulsed plate plasma implantation system - Google Patents

Pulsed plate plasma implantation system

Info

Publication number: SG101917A1
Authority: SG; Singapore
Prior art keywords: implantation system; plate plasma; plasma implantation; pulsed plate; pulsed
Prior art date: 1996-10-10

Application number

SG9703664A

Inventor

Stuart Denholm Alec

Shao Jiqun

Original Assignee

Eaton Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1996-10-10

Filing date

1997-10-04

Publication date

2004-02-27

1996-10-10 Priority claimed from US08/728,000 external-priority patent/US5654043A/en

1997-10-04 Application filed by Eaton Corp filed Critical Eaton Corp

2004-02-27 Publication of SG101917A1 publication Critical patent/SG101917A1/en

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes

Landscapes

Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Plasma & Fusion (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physical Vapour Deposition (AREA)
Plasma Technology (AREA)

SG9703664A 1996-10-10 1997-10-04 Pulsed plate plasma implantation system SG101917A1 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US08/728,000 US5654043A (en)	1996-10-10	1996-10-10	Pulsed plate plasma implantation system and method

Publications (1)

Publication Number	Publication Date
SG101917A1 true SG101917A1 (en)	2004-02-27

Family

ID=24925020

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SG9703664A SG101917A1 (en)	1996-10-10	1997-10-04	Pulsed plate plasma implantation system

Country Status (4)

Country	Link
KR (1)	KR19980032745A (en)
DE (1)	DE69735986D1 (en)
SG (1)	SG101917A1 (en)
TW (1)	TW328139B (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6091629A (en) *	1983-10-25	1985-05-23	Nec Corp	Plasma vapor growing device
JPH01185918A (en) *	1988-01-21	1989-07-25	Fuji Electric Co Ltd	Apparatus for introduction of impurity into semiconductor substrate
JPH0536620A (en) *	1991-07-25	1993-02-12	Canon Inc	Semiconductor surface treatment method and equipment
US5572038A (en) *	1993-05-07	1996-11-05	Varian Associates, Inc.	Charge monitor for high potential pulse current dose measurement apparatus and method
JPH0786603A (en) *	1993-09-16	1995-03-31	Sharp Corp	Manufacture of semiconductor film
KR0137704B1 (en) *	1994-11-25	1998-06-01	김은영	Dual Mode Plasma Ion Implantation Apparatus and Surface Modification Method Using the Same

1997
- 1997-04-01 TW TW086104147A patent/TW328139B/en not_active IP Right Cessation
- 1997-10-04 SG SG9703664A patent/SG101917A1/en unknown
- 1997-10-07 DE DE69735986T patent/DE69735986D1/en not_active Expired - Lifetime
- 1997-10-10 KR KR1019970052173A patent/KR19980032745A/en not_active Application Discontinuation

Also Published As

Publication number	Publication date
KR19980032745A (en)	1998-07-25
TW328139B (en)	1998-03-11
DE69735986D1 (en)	2006-07-06

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