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SE8008739L - Diod samt denna utnyttjande minnesanordning - Google Patents

Diod samt denna utnyttjande minnesanordning

Info

Publication number
SE8008739L
SE8008739L SE8008739A SE8008739A SE8008739L SE 8008739 L SE8008739 L SE 8008739L SE 8008739 A SE8008739 A SE 8008739A SE 8008739 A SE8008739 A SE 8008739A SE 8008739 L SE8008739 L SE 8008739L
Authority
SE
Sweden
Prior art keywords
amorphous silicon
atomic percent
diod
memory device
region
Prior art date
Application number
SE8008739A
Other languages
English (en)
Swedish (sv)
Inventor
S H Holmberg
R A Flasck
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of SE8008739L publication Critical patent/SE8008739L/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/366—Multistable devices; Devices having two or more distinct operating states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H10D48/381—Multistable devices; Devices having two or more distinct operating states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H10N70/8845—Carbon or carbides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/35—Material including carbon, e.g. graphite, grapheme
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Bipolar Transistors (AREA)
  • Non-Volatile Memory (AREA)
SE8008739A 1979-12-13 1980-12-12 Diod samt denna utnyttjande minnesanordning SE8008739L (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10301179A 1979-12-13 1979-12-13
US20827480A 1980-11-19 1980-11-19

Publications (1)

Publication Number Publication Date
SE8008739L true SE8008739L (sv) 1981-06-14

Family

ID=26799984

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8008739A SE8008739L (sv) 1979-12-13 1980-12-12 Diod samt denna utnyttjande minnesanordning

Country Status (15)

Country Link
JP (3) JPS56115571A (es)
KR (2) KR850001045B1 (es)
AU (1) AU543740B2 (es)
BE (1) BE886631A (es)
CA (3) CA1155239A (es)
DE (1) DE3046701A1 (es)
FR (1) FR2475295A1 (es)
GB (1) GB2066566B (es)
IL (1) IL61671A (es)
IT (1) IT1194001B (es)
MX (1) MX150800A (es)
NL (1) NL8006771A (es)
SE (1) SE8008739L (es)
SG (1) SG72784G (es)
ZA (3) ZA807762B (es)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890790A (ja) * 1981-08-07 1983-05-30 ザ　ブリテイッシュ　ペトロレアム　カンパニ−　ピ−．エル．シ− 半導体装置
JPS5867066A (ja) * 1981-10-16 1983-04-21 Semiconductor Energy Lab Co Ltd 絶緑ゲート型電界効果半導体装置の作製方法
JPS59501988A (ja) * 1982-11-11 1984-11-29 ハイドリル　カンパニ− 安全弁装置及び方法
AU562641B2 (en) * 1983-01-18 1987-06-18 Energy Conversion Devices Inc. Electronic matrix array
US4677742A (en) * 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
US4545111A (en) * 1983-01-18 1985-10-08 Energy Conversion Devices, Inc. Method for making, parallel preprogramming or field programming of electronic matrix arrays
US4569121A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer
US4569120A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation
JPS60153552U (ja) * 1984-03-24 1985-10-12 沖電気工業株式会社 Ｐｎ接合半導体装置
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US4914055A (en) * 1989-08-24 1990-04-03 Advanced Micro Devices, Inc. Semiconductor antifuse structure and method
GB9113795D0 (en) * 1991-06-26 1991-08-14 Philips Electronic Associated Thin-film rom devices and their manufacture
GB9117680D0 (en) * 1991-08-16 1991-10-02 Philips Electronic Associated Electronic matrix array devices
JP3501416B2 (ja) * 1994-04-28 2004-03-02 忠弘 大見 半導体装置
JP2500484B2 (ja) * 1994-07-11 1996-05-29 ソニー株式会社 薄膜トランジスタの製法
US6646912B2 (en) * 2001-06-05 2003-11-11 Hewlett-Packard Development Company, Lp. Non-volatile memory
US6599796B2 (en) * 2001-06-29 2003-07-29 Hewlett-Packard Development Company, L.P. Apparatus and fabrication process to reduce crosstalk in pirm memory array
JP3948292B2 (ja) 2002-02-01 2007-07-25 株式会社日立製作所 半導体記憶装置及びその製造方法
WO2004027877A1 (ja) * 2002-09-19 2004-04-01 Sharp Kabushiki Kaisha 抵抗変化機能体およびその製造方法
JP4541651B2 (ja) * 2003-03-13 2010-09-08 シャープ株式会社 抵抗変化機能体、メモリおよびその製造方法並びに半導体装置および電子機器
JP4634014B2 (ja) * 2003-05-22 2011-02-16 株式会社日立製作所 半導体記憶装置
KR100504700B1 (ko) * 2003-06-04 2005-08-03 삼성전자주식회사 고집적 상변환 램
JP4767653B2 (ja) * 2004-10-22 2011-09-07 株式会社半導体エネルギー研究所 半導体装置及び無線チップ
WO2006043611A1 (en) 2004-10-22 2006-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2008118108A (ja) * 2006-08-25 2008-05-22 Qimonda Ag 情報記憶素子およびその製造方法
JP2007019559A (ja) * 2006-10-23 2007-01-25 Hitachi Ltd 半導体記憶装置及びその製造方法
US7915603B2 (en) * 2006-10-27 2011-03-29 Qimonda Ag Modifiable gate stack memory element
KR101166834B1 (ko) * 2007-06-20 2012-07-19 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 전자 부품 및 그 제조 방법
US9716225B2 (en) 2014-09-03 2017-07-25 Micron Technology, Inc. Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51122382A (en) * 1975-04-18 1976-10-26 Fujitsu Ltd Semiconductor device
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS5819138B2 (ja) * 1977-01-11 1983-04-16 日本電信電話株式会社 半導体装置
JPS53144274A (en) * 1977-05-23 1978-12-15 Hitachi Ltd Semiconductor device and its manufacture
JPS5457879A (en) * 1977-10-15 1979-05-10 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
US4177475A (en) * 1977-10-31 1979-12-04 Burroughs Corporation High temperature amorphous memory device for an electrically alterable read-only memory
DE2909197A1 (de) * 1978-03-20 1979-10-04 Texas Instruments Inc Verfahren zur herstellung eines festspeichers und festspeichermatrix

Also Published As

Publication number Publication date
ZA807763B (en) 1981-12-30
MX150800A (es) 1984-07-19
SG72784G (en) 1985-03-29
CA1161970A (en) 1984-02-07
JPS56100464A (en) 1981-08-12
JPS56103474A (en) 1981-08-18
IL61671A (en) 1984-04-30
GB2066566A (en) 1981-07-08
IT1194001B (it) 1988-08-31
FR2475295A1 (fr) 1981-08-07
BE886631A (fr) 1981-04-01
AU543740B2 (en) 1985-05-02
CA1155239A (en) 1983-10-11
ZA807762B (en) 1981-12-30
DE3046701A1 (de) 1981-10-15
ZA807761B (en) 1981-12-30
CA1162327A (en) 1984-02-14
AU6531580A (en) 1981-06-18
GB2066566B (en) 1984-07-04
JPS56115571A (en) 1981-09-10
KR850001045B1 (en) 1985-07-19
IT8026643A0 (it) 1980-12-12
IL61671A0 (en) 1981-01-30
KR830004681A (ko) 1983-07-16
NL8006771A (nl) 1981-07-16
KR830004679A (ko) 1983-07-16

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