SE8003729L - Vmos/bipoler effektomkopplingsanordning - Google Patents
Vmos/bipoler effektomkopplingsanordningInfo
- Publication number
- SE8003729L SE8003729L SE8003729A SE8003729A SE8003729L SE 8003729 L SE8003729 L SE 8003729L SE 8003729 A SE8003729 A SE 8003729A SE 8003729 A SE8003729 A SE 8003729A SE 8003729 L SE8003729 L SE 8003729L
- Authority
- SE
- Sweden
- Prior art keywords
- vmos
- bipoler
- connection device
- power connection
- collector
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/040,991 US4329705A (en) | 1979-05-21 | 1979-05-21 | VMOS/Bipolar power switching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE8003729L true SE8003729L (sv) | 1980-11-22 |
Family
ID=21914119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8003729A SE8003729L (sv) | 1979-05-21 | 1980-05-19 | Vmos/bipoler effektomkopplingsanordning |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4329705A (sv) |
| JP (1) | JPS55156360A (sv) |
| CA (1) | CA1141867A (sv) |
| FR (1) | FR2457566A1 (sv) |
| GB (1) | GB2050054B (sv) |
| SE (1) | SE8003729L (sv) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8001560A (nl) * | 1980-03-17 | 1981-10-16 | Philips Nv | Stroomstabilisator opgebouwd met veldeffekttransistor van het verrijkingstype. |
| DD154049A1 (de) * | 1980-10-30 | 1982-02-17 | Siegfried Wagner | Steuerbares halbleiterbauelement |
| FR2505102B1 (fr) * | 1981-04-29 | 1986-01-24 | Radiotechnique Compelec | Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree |
| FR2513016A1 (fr) * | 1981-09-14 | 1983-03-18 | Radiotechnique Compelec | Transistor v mos haute tension, et son procede de fabrication |
| FR2524710B1 (fr) * | 1982-04-01 | 1986-03-14 | Gen Electric | Dispositif de commutation a semi-conducteur |
| JPS59231862A (ja) * | 1983-06-13 | 1984-12-26 | Nissan Motor Co Ltd | 縦型ｍｏｓトランジスタ |
| JPS6097669A (ja) * | 1983-11-02 | 1985-05-31 | Hitachi Ltd | 半導体集積回路装置 |
| US4783694A (en) * | 1984-03-16 | 1988-11-08 | Motorola Inc. | Integrated bipolar-MOS semiconductor device with common collector and drain |
| US5038051A (en) * | 1984-05-08 | 1991-08-06 | The United States Of America As Represented By The Secretary Of The Navy | Solid state modulator for microwave transmitters |
| US5162877A (en) * | 1987-01-27 | 1992-11-10 | Fujitsu Limited | Semiconductor integrated circuit device and method of producing same |
| JPS63213370A (ja) * | 1987-02-28 | 1988-09-06 | Nippon Denso Co Ltd | 電力用トランジスタの保護回路 |
| KR930008899B1 (ko) * | 1987-12-31 | 1993-09-16 | 금성일렉트론 주식회사 | 트랜칭(trenching)에 의한 바이-씨모스(Bi-CMOS)제조방법 |
| DE3838355A1 (de) * | 1988-11-11 | 1990-05-17 | Fraunhofer Ges Forschung | Vertikaltransistoranordnung |
| FR2725307B1 (fr) * | 1994-09-30 | 1996-12-20 | Sgs Thomson Microelectronics | Composant semiconducteur d'alimentation, de recirculation et de demagnetisation d'une charge selfique |
| EP0709962B1 (en) * | 1994-10-31 | 2002-10-02 | Hewlett-Packard Company, A Delaware Corporation | System for suppressing power transients when connecting a disk drive in an operating RAID system |
| US6121633A (en) * | 1997-06-12 | 2000-09-19 | Cree Research, Inc. | Latch-up free power MOS-bipolar transistor |
| US5969378A (en) * | 1997-06-12 | 1999-10-19 | Cree Research, Inc. | Latch-up free power UMOS-bipolar transistor |
| US6429481B1 (en) | 1997-11-14 | 2002-08-06 | Fairchild Semiconductor Corporation | Field effect transistor and method of its manufacture |
| GB2354879B (en) * | 1999-08-11 | 2004-05-12 | Mitel Semiconductor Ltd | A semiconductor device |
| US6597210B2 (en) * | 2001-10-03 | 2003-07-22 | Bruce W. Carsten | Apparatus and method for control and driving BJT used as controlled rectifier |
| US7078296B2 (en) | 2002-01-16 | 2006-07-18 | Fairchild Semiconductor Corporation | Self-aligned trench MOSFETs and methods for making the same |
| EP2230684B1 (de) * | 2003-07-08 | 2013-10-30 | Infineon Technologies AG | Herstellungsverfahren für integrierte Schaltungsanordnung mit niederohmigen Kontakten |
| JP2010118548A (ja) * | 2008-11-13 | 2010-05-27 | Mitsubishi Electric Corp | 半導体装置 |
| US9634664B2 (en) * | 2013-04-05 | 2017-04-25 | Applied Wireless Identifications Group, Inc. | Over-current and/or over-voltage protection circuit |
| US9935628B2 (en) * | 2015-11-10 | 2018-04-03 | Analog Devices Global | FET—bipolar transistor combination, and a switch comprising such a FET—bipolar transistor combination |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3512012A (en) * | 1965-11-16 | 1970-05-12 | United Aircraft Corp | Field effect transistor circuit |
| NL152708B (nl) * | 1967-02-28 | 1977-03-15 | Philips Nv | Halfgeleiderinrichting met een veldeffecttransistor met geisoleerde poortelektrode. |
| US3609479A (en) * | 1968-02-29 | 1971-09-28 | Westinghouse Electric Corp | Semiconductor integrated circuit having mis and bipolar transistor elements |
| US3553541A (en) * | 1969-04-17 | 1971-01-05 | Bell Telephone Labor Inc | Bilateral switch using combination of field effect transistors and bipolar transistors |
| US3877059A (en) * | 1973-01-02 | 1975-04-08 | Motorola Inc | Single diffused monolithic darlington circuit and method of manufacture thereof |
| DE2311340C2 (de) * | 1973-03-07 | 1974-04-04 | Claude 8000 Muenchen Frantz | Schaltung zur Verkürzung der Einschaltzeit von induktiven Verbrauchern |
| US3879619A (en) * | 1973-06-26 | 1975-04-22 | Ibm | Mosbip switching circuit |
| JPS5140887A (sv) * | 1974-10-04 | 1976-04-06 | Hitachi Ltd | |
| FR2302594A1 (fr) * | 1975-02-28 | 1976-09-24 | Radiotechnique Compelec | Dispositif semi-conducteur integre |
| US4072981A (en) * | 1975-03-25 | 1978-02-07 | Texas Instruments Incorporated | Fast switching Darlington circuit |
| US4048649A (en) * | 1976-02-06 | 1977-09-13 | Transitron Electronic Corporation | Superintegrated v-groove isolated bipolar and vmos transistors |
| US4095252A (en) * | 1976-12-27 | 1978-06-13 | National Semiconductor Corporation | Composite jfet-bipolar transistor structure |
| US4145703A (en) * | 1977-04-15 | 1979-03-20 | Supertex, Inc. | High power MOS device and fabrication method therefor |
| US4119996A (en) * | 1977-07-20 | 1978-10-10 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Complementary DMOS-VMOS integrated circuit structure |
| FR2422258A1 (fr) * | 1978-01-19 | 1979-11-02 | Radiotechnique Compelec | Dispositif semiconducteur monolithique a transistors de types mos et bipolaire |
| US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
-
1979
- 1979-05-21 US US06/040,991 patent/US4329705A/en not_active Expired - Lifetime
-
1980
- 1980-05-02 GB GB8014863A patent/GB2050054B/en not_active Expired
- 1980-05-19 SE SE8003729A patent/SE8003729L/sv not_active Application Discontinuation
- 1980-05-20 FR FR8011250A patent/FR2457566A1/fr not_active Withdrawn
- 1980-05-20 CA CA000352287A patent/CA1141867A/en not_active Expired
- 1980-05-21 JP JP6659680A patent/JPS55156360A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55156360A (en) | 1980-12-05 |
| GB2050054B (en) | 1983-08-03 |
| GB2050054A (en) | 1980-12-31 |
| CA1141867A (en) | 1983-02-22 |
| US4329705A (en) | 1982-05-11 |
| FR2457566A1 (fr) | 1980-12-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAV | Patent application has lapsed |
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