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SE547356C2 - Tensile-strained III-nitride nano- and micromechanical resonators and methods for producing these resonators - Google Patents

Tensile-strained III-nitride nano- and micromechanical resonators and methods for producing these resonators

Info

Publication number
SE547356C2
SE547356C2 SE2450131A SE2450131A SE547356C2 SE 547356 C2 SE547356 C2 SE 547356C2 SE 2450131 A SE2450131 A SE 2450131A SE 2450131 A SE2450131 A SE 2450131A SE 547356 C2 SE547356 C2 SE 547356C2
Authority
SE
Sweden
Prior art keywords
resonator
substrate
lll
film
grown
Prior art date
Application number
SE2450131A
Other languages
Swedish (sv)
Other versions
SE2450131A1 (en
Inventor
Alexander Wolfgang Martin Jung
Anastasiia Ciers
André Strittmatter
Armin Dadgar
Joachim Ciers
Witlef Wieczorek
Original Assignee
Wacqt Ip Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacqt Ip Ab filed Critical Wacqt Ip Ab
Priority to SE2450131A priority Critical patent/SE547356C2/en
Priority to PCT/SE2025/050072 priority patent/WO2025174300A1/en
Publication of SE2450131A1 publication Critical patent/SE2450131A1/en
Publication of SE547356C2 publication Critical patent/SE547356C2/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • H10P95/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0307—Anchors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Micromachines (AREA)

Abstract

The present disclosure relates to a method for producing a mechanical resonator (100), the method (300) comprises providing (310) a crystalline substrate (151); growing (320) a lll-N film (152) on the substrate (151), wherein the grown lll-N film (152) is tensile-strained; forming (330) the resonator (100) of said lll-N film (152) grown on the substrate (151), wherein forming the resonator (100) comprises applying (332) a resist (155), performing lithography (333), and etching (335) steps, and wherein the formed resonator (100) comprises a resonating part (110) arranged to maintain a vibration and at least two anchor parts (120); wherein the resonating part (110) is released from the substrate (151) by said etching (335), wherein the anchor parts (120) are in contact with the substrate (151), and wherein each resonating part (110) is attached to two or more of said anchor parts (120).

Claims (10)

1. A method for producing a mechanical resonator (100), the method (300) comprises - providing (310) a crystalline substrate (151); - growing (320) a lll-N film (152) on the substrate (151 ), wherein the grown lll-N film (152) is tensiie-strained; - forming (330) the resonator (100) of said lll-N film (152) grown on the substrate (151), wherein forming the resonator (100) comprises applying (332) a resist (155), performing lithography (333), and etching (335) steps, and wherein the formed resonator (100) comprises at âeaat three ancttor parts (120) and a resonating part (110) arranged to maintain a vibration"atftd--a-t--least--twe-aaeea11-earts-(1-2G); wherein the resonating part (110) is released from the substrate (151) by said etching (335), wherein the anchor parts (120) are in contact with the substrate (151), and wherein eeeathewresonating part (110) is attached to tvtfesaid three or more at--ea-td--anchor parts (120)¿ wherein the resenatitta part (110) contpršees at least one ätanctiest (1153 and a bšuraütyf of iffierconrtecited beanns, and wherein, via said bearna, each iunctian (115) leads to at Eeast three ancher partiet (1201 ancšfor other iunctions (115).
2. The method according to claim 1, wherein forming the resonator (100) comprises applying (331) a hard mask (154) to the lll-N film (152).
3. The method according to claim 1 or 2, wherein the grown lll-N film (152) and the resonating part (110) comprises aluminium nitride and/or lnAlGaN.
4. The method according to any preceding claim, wherein said resonator(100) is a nanomechanical resonator or micromechanical resonator that operates at pressures below 10'5 mbar at room temperature and/or temperatures below.
5. The method according to any preceding claim, wherein the crystalline substrate (151) is a {111}-oriented Si substrate (151) and/or a {110}-oriented Si substrate (151), and the crystalline lll-N film (152) is grown on said Si substrate (151). eematr-isaa-at-tea-at--atte--je:te-tittat--(11-ft-åâ1,--wheraie-aaah-genatten"Q1-15)--Eeaa-e-ta-at--teas-t 2 iii. The method according to any ggracedšrfig clairrgelaiafzflë, wherein the resonator part (110) comprises a central pad (112) that is attached to three or more junctions (115), wherein, from the central pad (112) to the anchor parts (120), each junction is branched off into two at successive junctions (115) in a hierarchical structure. 5 8-2. A mechanical resonator (100) comprising - a resonating part (110) comprising a strained lll-N film (152), and - at least tWa--fieneanchor parts (120) attached to eaea--gllgresonating part (110); wherein the resonating part (110) is arranged to maintain a vibration, atee wherein the anchor parts (120) are in contact with a substrate (151 ), 10 wherein the reeonatina part (110) comprises at least one iuitctian (115) and a aiuralštv of šswtercoiwnacted bearns. and wherein, via said beams, each iulfctien (115) leads te at least three ancher partís) (120) andíer other iunctions (115). afi. The resonator according to claim êï, wherein the resonating part (110) comprises 15 tensile-strained aluminium nitride, and/or lnAlGaN. 403. The resonator according to claim â-»fmor Säg, wherein the substrate (151) is a Si substrate (151). 21410. The resonator according to claim ëiwto 103, wherein said resonators (100) is a nanomechanical resonator and/or a micromechanical resonator. 20 2121---Tae--afaeaafater---aeeareiag-"ta"elaim---êš---te----fl-1--;-"Waereia---tha--reeaea-ting---paiflt---(-fl-fl-0}---šs »whereia--tha--rfeaeaati:ag-aa:ft-lä-fE-éäeeaaewfäaee--a--åaaetšae--š-fl-fl-fšå-ieaa-irä-g--te--at--leaet \ \ ,
SE2450131A 2024-02-12 2024-02-12 Tensile-strained III-nitride nano- and micromechanical resonators and methods for producing these resonators SE547356C2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SE2450131A SE547356C2 (en) 2024-02-12 2024-02-12 Tensile-strained III-nitride nano- and micromechanical resonators and methods for producing these resonators
PCT/SE2025/050072 WO2025174300A1 (en) 2024-02-12 2025-01-31 Tensile-strained iii-nitride nano- and micromechanical resonators and methods for producing these resonators

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE2450131A SE547356C2 (en) 2024-02-12 2024-02-12 Tensile-strained III-nitride nano- and micromechanical resonators and methods for producing these resonators

Publications (2)

Publication Number Publication Date
SE2450131A1 SE2450131A1 (en) 2025-07-15
SE547356C2 true SE547356C2 (en) 2025-07-15

Family

ID=96347633

Family Applications (1)

Application Number Title Priority Date Filing Date
SE2450131A SE547356C2 (en) 2024-02-12 2024-02-12 Tensile-strained III-nitride nano- and micromechanical resonators and methods for producing these resonators

Country Status (2)

Country Link
SE (1) SE547356C2 (en)
WO (1) WO2025174300A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7924119B1 (en) * 2007-01-19 2011-04-12 Georgia Tech Research Corporation Micromechanical bulk acoustic mode resonators having interdigitated electrodes and multiple pairs of anchor supports
US20200358420A1 (en) * 2019-05-06 2020-11-12 Alexandre Robichaud Electromechanically damped resonator devices and methods
US11043627B2 (en) * 2016-07-01 2021-06-22 Intel Corporation Techniques for monolithic co-integration of thin-film bulk acoustic resonator devices and III-N semiconductor transistor devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7924119B1 (en) * 2007-01-19 2011-04-12 Georgia Tech Research Corporation Micromechanical bulk acoustic mode resonators having interdigitated electrodes and multiple pairs of anchor supports
US11043627B2 (en) * 2016-07-01 2021-06-22 Intel Corporation Techniques for monolithic co-integration of thin-film bulk acoustic resonator devices and III-N semiconductor transistor devices
US20200358420A1 (en) * 2019-05-06 2020-11-12 Alexandre Robichaud Electromechanically damped resonator devices and methods

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
A.N. Cleland et. al., "Single-crystal aluminum nitride nanomechanical resonators", Appl. Phys. Lett. 79, 12 (2001) *
M. Placidi et. al., "Highly sensitive strained AlN on Si(111) resonators", Sensors and Actuators A 150, 64-68 (2009) *
W.H.P. Pernice et. al. "High-Q aluminum nitride photonic crystal nanobeam cavities", Appl. Phys. Lett. 100, 091105 (2009) *

Also Published As

Publication number Publication date
SE2450131A1 (en) 2025-07-15
WO2025174300A1 (en) 2025-08-21

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