SE379117B - - Google Patents
Info
- Publication number
- SE379117B SE379117B SE7204661A SE466172A SE379117B SE 379117 B SE379117 B SE 379117B SE 7204661 A SE7204661 A SE 7204661A SE 466172 A SE466172 A SE 466172A SE 379117 B SE379117 B SE 379117B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16147871A | 1971-07-12 | 1971-07-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE379117B true SE379117B (en) | 1975-09-22 |
Family
ID=22581334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7204661A SE379117B (en) | 1971-07-12 | 1972-04-11 |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS5138587B1 (en) |
AU (1) | AU471347B2 (en) |
BE (1) | BE781698A (en) |
CA (1) | CA941515A (en) |
DE (1) | DE2215850A1 (en) |
FR (1) | FR2145460B1 (en) |
GB (1) | GB1380466A (en) |
IT (1) | IT951315B (en) |
NL (1) | NL7204607A (en) |
SE (1) | SE379117B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2404922A1 (en) * | 1977-09-30 | 1979-04-27 | Radiotechnique Compelec | PROM cells with diodes and fuses - has PN junction diode and electrically destructible element to re-form broken junction or open new junction |
JPS57141962A (en) * | 1981-02-27 | 1982-09-02 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS5825264A (en) * | 1981-08-07 | 1983-02-15 | Hitachi Ltd | Insulated gate semiconductor device |
JPH02185069A (en) * | 1988-12-02 | 1990-07-19 | Motorola Inc | Semiconductor device with high energy blocking ability and temperature compensated blocking voltage |
US5025298A (en) * | 1989-08-22 | 1991-06-18 | Motorola, Inc. | Semiconductor structure with closely coupled substrate temperature sense element |
US5005061A (en) * | 1990-02-05 | 1991-04-02 | Motorola, Inc. | Avalanche stress protected semiconductor device having variable input impedance |
EP0622850B1 (en) * | 1993-04-30 | 1999-04-21 | International Business Machines Corporation | Process for making an electrostatic discharge protect diode for silicon-on-insulator technology |
JP5924313B2 (en) | 2012-08-06 | 2016-05-25 | 株式会社デンソー | diode |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3728591A (en) * | 1971-09-03 | 1973-04-17 | Rca Corp | Gate protective device for insulated gate field-effect transistors |
-
1972
- 1972-03-16 CA CA137,313A patent/CA941515A/en not_active Expired
- 1972-03-30 GB GB1497872A patent/GB1380466A/en not_active Expired
- 1972-03-30 DE DE2215850A patent/DE2215850A1/en active Pending
- 1972-04-05 BE BE781698A patent/BE781698A/en unknown
- 1972-04-06 NL NL7204607A patent/NL7204607A/xx not_active Application Discontinuation
- 1972-04-10 AU AU40993/72A patent/AU471347B2/en not_active Expired
- 1972-04-11 IT IT23019/72A patent/IT951315B/en active
- 1972-04-11 FR FR7212677A patent/FR2145460B1/fr not_active Expired
- 1972-04-11 SE SE7204661A patent/SE379117B/xx unknown
- 1972-04-12 JP JP47036813A patent/JPS5138587B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CA941515A (en) | 1974-02-05 |
AU471347B2 (en) | 1973-10-18 |
GB1380466A (en) | 1975-01-15 |
AU4099372A (en) | 1973-10-18 |
IT951315B (en) | 1973-06-30 |
FR2145460A1 (en) | 1973-02-23 |
FR2145460B1 (en) | 1977-01-14 |
NL7204607A (en) | 1973-01-16 |
DE2215850A1 (en) | 1973-02-08 |
JPS5138587B1 (en) | 1976-10-22 |
BE781698A (en) | 1972-07-31 |