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SE379117B - - Google Patents

Info

Publication number
SE379117B
SE379117B SE7204661A SE466172A SE379117B SE 379117 B SE379117 B SE 379117B SE 7204661 A SE7204661 A SE 7204661A SE 466172 A SE466172 A SE 466172A SE 379117 B SE379117 B SE 379117B
Authority
SE
Sweden
Application number
SE7204661A
Inventor
Jr J E Meyer
Jr J H Scott
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE379117B publication Critical patent/SE379117B/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/03Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
SE7204661A 1971-07-12 1972-04-11 SE379117B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16147871A 1971-07-12 1971-07-12

Publications (1)

Publication Number Publication Date
SE379117B true SE379117B (en) 1975-09-22

Family

ID=22581334

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7204661A SE379117B (en) 1971-07-12 1972-04-11

Country Status (10)

Country Link
JP (1) JPS5138587B1 (en)
AU (1) AU471347B2 (en)
BE (1) BE781698A (en)
CA (1) CA941515A (en)
DE (1) DE2215850A1 (en)
FR (1) FR2145460B1 (en)
GB (1) GB1380466A (en)
IT (1) IT951315B (en)
NL (1) NL7204607A (en)
SE (1) SE379117B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2404922A1 (en) * 1977-09-30 1979-04-27 Radiotechnique Compelec PROM cells with diodes and fuses - has PN junction diode and electrically destructible element to re-form broken junction or open new junction
JPS57141962A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Semiconductor integrated circuit device
JPS5825264A (en) * 1981-08-07 1983-02-15 Hitachi Ltd Insulated gate semiconductor device
JPH02185069A (en) * 1988-12-02 1990-07-19 Motorola Inc Semiconductor device with high energy blocking ability and temperature compensated blocking voltage
US5025298A (en) * 1989-08-22 1991-06-18 Motorola, Inc. Semiconductor structure with closely coupled substrate temperature sense element
US5005061A (en) * 1990-02-05 1991-04-02 Motorola, Inc. Avalanche stress protected semiconductor device having variable input impedance
EP0622850B1 (en) * 1993-04-30 1999-04-21 International Business Machines Corporation Process for making an electrostatic discharge protect diode for silicon-on-insulator technology
JP5924313B2 (en) 2012-08-06 2016-05-25 株式会社デンソー diode

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728591A (en) * 1971-09-03 1973-04-17 Rca Corp Gate protective device for insulated gate field-effect transistors

Also Published As

Publication number Publication date
CA941515A (en) 1974-02-05
AU471347B2 (en) 1973-10-18
GB1380466A (en) 1975-01-15
AU4099372A (en) 1973-10-18
IT951315B (en) 1973-06-30
FR2145460A1 (en) 1973-02-23
FR2145460B1 (en) 1977-01-14
NL7204607A (en) 1973-01-16
DE2215850A1 (en) 1973-02-08
JPS5138587B1 (en) 1976-10-22
BE781698A (en) 1972-07-31

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