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SE377735B - - Google Patents

Info

Publication number
SE377735B
SE377735B SE7203497A SE349772A SE377735B SE 377735 B SE377735 B SE 377735B SE 7203497 A SE7203497 A SE 7203497A SE 349772 A SE349772 A SE 349772A SE 377735 B SE377735 B SE 377735B
Authority
SE
Sweden
Application number
SE7203497A
Inventor
C M Hart
A Slob
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7103772A external-priority patent/NL7103772A/xx
Priority claimed from NL7108373A external-priority patent/NL7108373A/xx
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE377735B publication Critical patent/SE377735B/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/02Manually-operated control
    • H03G3/04Manually-operated control in untuned amplifiers
    • H03G3/10Manually-operated control in untuned amplifiers having semiconductor devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/14Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
    • H04B10/806Arrangements for feeding power
    • H04B10/807Optical power feeding, i.e. transmitting power using an optical signal
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211Design considerations for internal polarisation
    • H10D89/311Design considerations for internal polarisation in bipolar devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/103Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R25/00Deaf-aid sets, i.e. electro-acoustic or electro-mechanical hearing aids; Electric tinnitus maskers providing an auditory perception

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Electromagnetism (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Circuit Arrangements For Discharge Lamps (AREA)
SE7203497A 1971-03-20 1972-03-17 SE377735B (xx)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7103772A NL7103772A (xx) 1971-03-20 1971-03-20
NL7108373A NL7108373A (xx) 1971-06-18 1971-06-18

Publications (1)

Publication Number Publication Date
SE377735B true SE377735B (xx) 1975-07-21

Family

ID=26644637

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7203497A SE377735B (xx) 1971-03-20 1972-03-17

Country Status (13)

Country Link
JP (3) JPS5550390B1 (xx)
AR (1) AR196071A1 (xx)
AT (1) AT326193B (xx)
AU (1) AU467899B2 (xx)
BE (1) BE780961A (xx)
BR (1) BR7201587D0 (xx)
CA (3) CA964335A (xx)
CH (1) CH550487A (xx)
DE (1) DE2211384A1 (xx)
FR (1) FR2130399B1 (xx)
GB (1) GB1395032A (xx)
IT (1) IT953971B (xx)
SE (1) SE377735B (xx)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147583B2 (xx) * 1972-12-29 1976-12-15
US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
JPS5754969B2 (xx) * 1974-04-04 1982-11-20
JPS57658B2 (xx) * 1974-04-16 1982-01-07
JPS50137478A (xx) * 1974-04-18 1975-10-31
JPS5714064B2 (xx) * 1974-04-25 1982-03-20
JPS5718710B2 (xx) * 1974-05-10 1982-04-17
JPS5648983B2 (xx) * 1974-05-10 1981-11-19
JPS52105786A (en) * 1976-03-01 1977-09-05 Mitsubishi Electric Corp Semiconductor device
DE2641915A1 (de) * 1976-09-17 1978-03-23 Siemens Ag Monolithisch integrierte schaltung zur erzeugung von impulsen langer dauer
DE2641912C3 (de) * 1976-09-17 1980-05-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schaltungsanordnung zur Übertragung elektrischer Versorgungsleistungen
JPS5368990A (en) * 1976-12-01 1978-06-19 Fujitsu Ltd Production of semiconductor integrated circuit
JPS56150871A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device
GB2151843A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
JPS61154063A (ja) * 1984-12-26 1986-07-12 Toshiba Corp 光半導体装置およびその製造方法
FR2619959B1 (fr) * 1987-08-31 1991-06-14 Thomson Semiconducteurs Circuit de detection de lumiere
JP2800827B2 (ja) * 1988-02-12 1998-09-21 浜松ホトニクス株式会社 光半導体装置およびその製造方法
GB2220316B (en) * 1988-05-05 1992-01-29 Plessey Co Plc Improvements in and relating to oscillators
DE102010039258B4 (de) 2010-08-12 2018-03-15 Infineon Technologies Austria Ag Transistorbauelement mit reduziertem Kurzschlussstrom

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2944165A (en) * 1956-11-15 1960-07-05 Otmar M Stuetzer Semionductive device powered by light
NL281945A (xx) * 1960-10-14 1900-01-01
NL297821A (xx) * 1962-10-08
FR1377412A (fr) * 1962-10-08 1964-11-06 Fairchild Camera Instr Co Transistor épitaxique inverse

Also Published As

Publication number Publication date
BE780961A (fr) 1972-09-20
CA970068A (en) 1975-06-24
FR2130399A1 (xx) 1972-11-03
DE2211384A1 (de) 1972-11-30
AU3997072A (en) 1973-09-20
JPS4736785A (xx) 1972-11-29
AU467899B2 (en) 1975-12-18
FR2130399B1 (xx) 1977-09-02
IT953971B (it) 1973-08-10
JPS5622144B2 (xx) 1981-05-23
BR7201587D0 (pt) 1974-10-22
DE2211384C2 (xx) 1989-06-15
ATA236072A (de) 1975-02-15
AT326193B (de) 1975-11-25
JPS5550390B1 (xx) 1980-12-17
CA964335A (en) 1975-03-11
JPS55160466A (en) 1980-12-13
CH550487A (de) 1974-06-14
JPS5622145B2 (xx) 1981-05-23
CA973955A (en) 1975-09-02
JPS55160465A (en) 1980-12-13
AR196071A1 (es) 1973-11-30
GB1395032A (en) 1975-05-21

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