SE331864B - - Google Patents
Info
- Publication number
- SE331864B SE331864B SE07683/69*A SE768369A SE331864B SE 331864 B SE331864 B SE 331864B SE 768369 A SE768369 A SE 768369A SE 331864 B SE331864 B SE 331864B
- Authority
- SE
- Sweden
- Prior art keywords
- junction
- illumination
- semi
- conductor
- capacitance
- Prior art date
Links
- 238000005286 illumination Methods 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000005055 memory storage Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Hybrid Cells (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE07683/69*A SE331864B (da) | 1969-05-30 | 1969-05-30 | |
GB2584170A GB1318087A (en) | 1969-05-30 | 1970-05-28 | Method of operating a semiconductor element exhibiting charge storage effect |
NL7007783A NL7007783A (da) | 1969-05-30 | 1970-05-29 | |
DE19702026411 DE2026411A1 (de) | 1969-05-30 | 1970-05-29 | Halbleiterelement mit Ladungsspeicher effekt und Verfahren zu seiner Herstellung |
FR7019897A FR2043851B1 (da) | 1969-05-30 | 1970-05-29 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE07683/69*A SE331864B (da) | 1969-05-30 | 1969-05-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE331864B true SE331864B (da) | 1971-01-18 |
Family
ID=20272024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE07683/69*A SE331864B (da) | 1969-05-30 | 1969-05-30 |
Country Status (5)
Country | Link |
---|---|
DE (1) | DE2026411A1 (da) |
FR (1) | FR2043851B1 (da) |
GB (1) | GB1318087A (da) |
NL (1) | NL7007783A (da) |
SE (1) | SE331864B (da) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU915683A1 (ru) * | 1980-10-23 | 1985-10-23 | Fizicheskoj I Im P N Lebedeva | ПРЕОБРАЗОВАТЕЛЬ ОПТИЧЕСКОГО ИЗЛУЧЕНИЯ в электрический сигнал на основе структуры |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3502884A (en) * | 1966-12-19 | 1970-03-24 | Rca Corp | Method and apparatus for detecting light by capacitance change using semiconductor material with depletion layer |
-
1969
- 1969-05-30 SE SE07683/69*A patent/SE331864B/xx unknown
-
1970
- 1970-05-28 GB GB2584170A patent/GB1318087A/en not_active Expired
- 1970-05-29 FR FR7019897A patent/FR2043851B1/fr not_active Expired
- 1970-05-29 DE DE19702026411 patent/DE2026411A1/de active Pending
- 1970-05-29 NL NL7007783A patent/NL7007783A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
FR2043851B1 (da) | 1975-01-10 |
DE2026411A1 (de) | 1971-12-16 |
FR2043851A1 (da) | 1971-02-19 |
GB1318087A (en) | 1973-05-23 |
NL7007783A (da) | 1970-12-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1046707A (en) | Improvements in or relating to storage circuits | |
SE331864B (da) | ||
GB954532A (en) | Semi-conductor adjustable band pass filter | |
GB1144298A (en) | Radiation detector | |
GB1509144A (en) | Avalanche photodiode | |
JPS55111171A (en) | Field-effect semiconductor device | |
JPS5346285A (en) | Mesa type high breakdown voltage semiconductor device | |
JPS5377476A (en) | Semiconductor integrated circuit device | |
SU824831A1 (ru) | Полупроводниковый прибор | |
GB1290718A (da) | ||
GB1190526A (en) | Semiconductor Device Intended Especially for Microwave Photodetectors. | |
SU270118A1 (ru) | Фоторезистор | |
GB1058753A (en) | Improvements relating to solid state devices | |
BELOVA et al. | Distribution of impurities in the p-n junctions of highly-alloyed germanium(Tunnel diode capacitance relation to displacement interpreted in terms of impurity drift in nonuniform field of p-n junction in highly doped germanium diodes) | |
BELOVA et al. | On the distribution of impurities in heavily doped germanium p-n junctions(Tunnel diode capacitance relation to displacement interpreted in terms of impurity drift in nonuniform field of p-n junction in highly doped germanium diodes) | |
BELOVA et al. | Study of the dependence of minority carrier lifetime on the concentration of majority carriers in heavily doped germanium by means of p-n junctions(Minority carrier lifetime dependence on majority carrier concentrations based on diffusion capacitance measurements in germanium p-n junction) | |
JPS5250179A (en) | Semiconductor device | |
GB1231543A (da) | ||
Goetzberger et al. | Avalanche effects in silicon p-n junctions. i- localized photomultiplication studies on microplasmas(Photocurrent multiplication in a microplasma measured as a function of reverse voltage in silicon p-n junction, noting avalanche effects) | |
Fatkullin et al. | Quiet solar daily variations of the geomagnetic field during igy. ii- noncyclic variations during magnetically quiet days- seasonal changes in field value at night(Noncyclic variation during magnetically quiet days, examining seasonal changes in geomagnetic field value at night during IGY) | |
CA667586A (en) | Transistor ignition circuit with diode in collector circuit | |
LOH | Presentation of exact solutions of entry into a planetary atmosphere at a variable lift-drag ratio | |
GB803347A (en) | Improvements in or relating to optical systems | |
ABDULLAEV et al. | The reactive properties of reverse-biased silicon p-n junction(Bias voltage dependence of capacitance in n-type silicon p-n junctions with voltage breakdown) | |
AU6153669A (en) | Voltage-vari able capacitor with extendible p-n junction region |