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SE318314B - - Google Patents

Info

Publication number
SE318314B
SE318314B SE3930/64A SE393064A SE318314B SE 318314 B SE318314 B SE 318314B SE 3930/64 A SE3930/64 A SE 3930/64A SE 393064 A SE393064 A SE 393064A SE 318314 B SE318314 B SE 318314B
Authority
SE
Sweden
Application number
SE3930/64A
Inventor
D Carlson
G Theriault
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE318314B publication Critical patent/SE318314B/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/20Automatic control
    • H03G3/30Automatic control in amplifiers having semiconductor devices
    • H03G3/3052Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • DTEXTILES; PAPER
    • D06TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06BTREATING TEXTILE MATERIALS USING LIQUIDS, GASES OR VAPOURS
    • D06B23/00Component parts, details, or accessories of apparatus or machines, specially adapted for the treating of textile materials, not restricted to a particular kind of apparatus, provided for in groups D06B1/00 - D06B21/00
    • D06B23/10Devices for dyeing samples
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/20Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator
    • H03B5/24Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator active element in amplifier being semiconductor device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191Tuned amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Textile Engineering (AREA)
  • Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
SE3930/64A 1963-04-01 1964-03-31 SE318314B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US269525A US3268827A (en) 1963-04-01 1963-04-01 Insulated-gate field-effect transistor amplifier having means to reduce high frequency instability

Publications (1)

Publication Number Publication Date
SE318314B true SE318314B (xx) 1969-12-08

Family

ID=23027641

Family Applications (1)

Application Number Title Priority Date Filing Date
SE3930/64A SE318314B (xx) 1963-04-01 1964-03-31

Country Status (8)

Country Link
US (1) US3268827A (xx)
BE (1) BE645953A (xx)
BR (1) BR6457999D0 (xx)
DE (1) DE1437435C3 (xx)
FR (1) FR1397523A (xx)
GB (1) GB1060242A (xx)
NL (1) NL6403409A (xx)
SE (1) SE318314B (xx)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3383569A (en) * 1964-03-26 1968-05-14 Suisse Horlogerie Transistor-capacitor integrated circuit structure
US3390314A (en) * 1964-10-30 1968-06-25 Rca Corp Semiconductor translating circuit
US3414781A (en) * 1965-01-22 1968-12-03 Hughes Aircraft Co Field effect transistor having interdigitated source and drain and overlying, insulated gate
GB1175601A (en) * 1966-03-28 1969-12-23 Matsushita Electronics Corp Insulated-Gate Field-Effect Transistor
US3553492A (en) * 1967-09-05 1971-01-05 Sierra Research Corp Voltage sampling and follower amplifier
NL6808352A (xx) * 1968-06-14 1969-12-16
US3534294A (en) * 1968-06-24 1970-10-13 Philips Corp Fet oscillator with constant current source for frequency stabilization
US3516003A (en) * 1968-07-30 1970-06-02 Bailey Meter Co High-gain single-stage a.c. cascode amplifier circuit
US3575614A (en) * 1968-12-13 1971-04-20 North American Rockwell Low voltage level mos interface circuit
DE1904787B2 (de) * 1969-01-31 1977-07-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrisches speicherelement und betrieb desselben
US3789312A (en) * 1972-04-03 1974-01-29 Ibm Threshold independent linear amplifier
US4001860A (en) * 1973-11-12 1977-01-04 Signetics Corporation Double diffused metal oxide semiconductor structure with isolated source and drain and method
JPS5875922A (ja) * 1981-10-30 1983-05-07 Toshiba Corp 半導体スイツチ回路
DE3326957C2 (de) * 1983-07-27 1986-07-31 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Schaltung
US6496074B1 (en) 2000-09-28 2002-12-17 Koninklijke Philips Electronics N.V. Cascode bootstrapped analog power amplifier circuit
US6498533B1 (en) 2000-09-28 2002-12-24 Koninklijke Philips Electronics N.V. Bootstrapped dual-gate class E amplifier circuit
US7701270B2 (en) * 2007-08-03 2010-04-20 International Business Machines Corporation Structure for a high output resistance, wide swing charge pump
US7583116B2 (en) * 2007-08-03 2009-09-01 International Business Machines Corporation High output resistance, wide swing charge pump

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2586080A (en) * 1949-10-11 1952-02-19 Bell Telephone Labor Inc Semiconductive signal translating device
US3010033A (en) * 1958-01-02 1961-11-21 Clevite Corp Field effect transistor
NL267831A (xx) * 1960-08-17
US3135926A (en) * 1960-09-19 1964-06-02 Gen Motors Corp Composite field effect transistor
NL274830A (xx) * 1961-04-12

Also Published As

Publication number Publication date
BR6457999D0 (pt) 1973-06-14
GB1060242A (en) 1967-03-01
NL6403409A (xx) 1964-10-02
DE1437435A1 (de) 1972-07-27
US3268827A (en) 1966-08-23
DE1437435B2 (de) 1978-07-06
DE1437435C3 (de) 1985-04-04
FR1397523A (fr) 1965-04-30
BE645953A (xx) 1964-07-16

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