SE318314B - - Google Patents
Info
- Publication number
- SE318314B SE318314B SE3930/64A SE393064A SE318314B SE 318314 B SE318314 B SE 318314B SE 3930/64 A SE3930/64 A SE 3930/64A SE 393064 A SE393064 A SE 393064A SE 318314 B SE318314 B SE 318314B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
-
- D—TEXTILES; PAPER
- D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
- D06B—TREATING TEXTILE MATERIALS USING LIQUIDS, GASES OR VAPOURS
- D06B23/00—Component parts, details, or accessories of apparatus or machines, specially adapted for the treating of textile materials, not restricted to a particular kind of apparatus, provided for in groups D06B1/00 - D06B21/00
- D06B23/10—Devices for dyeing samples
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/20—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator
- H03B5/24—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator active element in amplifier being semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
- H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
- H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Textile Engineering (AREA)
- Amplifiers (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US269525A US3268827A (en) | 1963-04-01 | 1963-04-01 | Insulated-gate field-effect transistor amplifier having means to reduce high frequency instability |
Publications (1)
Publication Number | Publication Date |
---|---|
SE318314B true SE318314B (xx) | 1969-12-08 |
Family
ID=23027641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE3930/64A SE318314B (xx) | 1963-04-01 | 1964-03-31 |
Country Status (8)
Country | Link |
---|---|
US (1) | US3268827A (xx) |
BE (1) | BE645953A (xx) |
BR (1) | BR6457999D0 (xx) |
DE (1) | DE1437435C3 (xx) |
FR (1) | FR1397523A (xx) |
GB (1) | GB1060242A (xx) |
NL (1) | NL6403409A (xx) |
SE (1) | SE318314B (xx) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3383569A (en) * | 1964-03-26 | 1968-05-14 | Suisse Horlogerie | Transistor-capacitor integrated circuit structure |
US3390314A (en) * | 1964-10-30 | 1968-06-25 | Rca Corp | Semiconductor translating circuit |
US3414781A (en) * | 1965-01-22 | 1968-12-03 | Hughes Aircraft Co | Field effect transistor having interdigitated source and drain and overlying, insulated gate |
GB1175601A (en) * | 1966-03-28 | 1969-12-23 | Matsushita Electronics Corp | Insulated-Gate Field-Effect Transistor |
US3553492A (en) * | 1967-09-05 | 1971-01-05 | Sierra Research Corp | Voltage sampling and follower amplifier |
NL6808352A (xx) * | 1968-06-14 | 1969-12-16 | ||
US3534294A (en) * | 1968-06-24 | 1970-10-13 | Philips Corp | Fet oscillator with constant current source for frequency stabilization |
US3516003A (en) * | 1968-07-30 | 1970-06-02 | Bailey Meter Co | High-gain single-stage a.c. cascode amplifier circuit |
US3575614A (en) * | 1968-12-13 | 1971-04-20 | North American Rockwell | Low voltage level mos interface circuit |
DE1904787B2 (de) * | 1969-01-31 | 1977-07-21 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Elektrisches speicherelement und betrieb desselben |
US3789312A (en) * | 1972-04-03 | 1974-01-29 | Ibm | Threshold independent linear amplifier |
US4001860A (en) * | 1973-11-12 | 1977-01-04 | Signetics Corporation | Double diffused metal oxide semiconductor structure with isolated source and drain and method |
JPS5875922A (ja) * | 1981-10-30 | 1983-05-07 | Toshiba Corp | 半導体スイツチ回路 |
DE3326957C2 (de) * | 1983-07-27 | 1986-07-31 | Telefunken electronic GmbH, 7100 Heilbronn | Integrierte Schaltung |
US6496074B1 (en) | 2000-09-28 | 2002-12-17 | Koninklijke Philips Electronics N.V. | Cascode bootstrapped analog power amplifier circuit |
US6498533B1 (en) | 2000-09-28 | 2002-12-24 | Koninklijke Philips Electronics N.V. | Bootstrapped dual-gate class E amplifier circuit |
US7701270B2 (en) * | 2007-08-03 | 2010-04-20 | International Business Machines Corporation | Structure for a high output resistance, wide swing charge pump |
US7583116B2 (en) * | 2007-08-03 | 2009-09-01 | International Business Machines Corporation | High output resistance, wide swing charge pump |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2586080A (en) * | 1949-10-11 | 1952-02-19 | Bell Telephone Labor Inc | Semiconductive signal translating device |
US3010033A (en) * | 1958-01-02 | 1961-11-21 | Clevite Corp | Field effect transistor |
NL267831A (xx) * | 1960-08-17 | |||
US3135926A (en) * | 1960-09-19 | 1964-06-02 | Gen Motors Corp | Composite field effect transistor |
NL274830A (xx) * | 1961-04-12 |
-
1963
- 1963-04-01 US US269525A patent/US3268827A/en not_active Expired - Lifetime
-
1964
- 1964-03-20 GB GB11953/64A patent/GB1060242A/en not_active Expired
- 1964-03-31 BR BR157999/64A patent/BR6457999D0/pt unknown
- 1964-03-31 SE SE3930/64A patent/SE318314B/xx unknown
- 1964-03-31 NL NL6403409A patent/NL6403409A/xx unknown
- 1964-03-31 BE BE645953A patent/BE645953A/xx unknown
- 1964-03-31 FR FR969212A patent/FR1397523A/fr not_active Expired
- 1964-04-01 DE DE1437435A patent/DE1437435C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
BR6457999D0 (pt) | 1973-06-14 |
GB1060242A (en) | 1967-03-01 |
NL6403409A (xx) | 1964-10-02 |
DE1437435A1 (de) | 1972-07-27 |
US3268827A (en) | 1966-08-23 |
DE1437435B2 (de) | 1978-07-06 |
DE1437435C3 (de) | 1985-04-04 |
FR1397523A (fr) | 1965-04-30 |
BE645953A (xx) | 1964-07-16 |