SE311407B - - Google Patents
Info
- Publication number
- SE311407B SE311407B SE5592/65A SE559265A SE311407B SE 311407 B SE311407 B SE 311407B SE 5592/65 A SE5592/65 A SE 5592/65A SE 559265 A SE559265 A SE 559265A SE 311407 B SE311407 B SE 311407B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36419464A | 1964-05-01 | 1964-05-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE311407B true SE311407B (xx) | 1969-06-09 |
Family
ID=23433453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE5592/65A SE311407B (xx) | 1964-05-01 | 1965-04-28 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3518574A (xx) |
| CH (1) | CH435478A (xx) |
| DE (1) | DE1489344C3 (xx) |
| GB (1) | GB1062725A (xx) |
| NL (1) | NL144789B (xx) |
| SE (1) | SE311407B (xx) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3675161A (en) * | 1968-10-12 | 1972-07-04 | Matsushita Electronics Corp | Varactor-controlled pn junction semiconductor microwave oscillation device |
| FR1593679A (xx) * | 1968-11-27 | 1970-06-01 | ||
| US3952265A (en) * | 1974-10-29 | 1976-04-20 | Hughes Aircraft Company | Monolithic dual mode emitter-detector terminal for optical waveguide transmission lines |
| NL7801181A (nl) * | 1978-02-02 | 1979-08-06 | Philips Nv | Injectielaser. |
| US4281253A (en) * | 1978-08-29 | 1981-07-28 | Optelecom, Inc. | Applications of dual function electro-optic transducer in optical signal transmission |
| US4349906A (en) * | 1979-09-18 | 1982-09-14 | Xerox Corporation | Optically controlled integrated current diode lasers |
| US4747107A (en) * | 1985-09-06 | 1988-05-24 | Bell Communications Research, Inc. | Single mode injection laser |
| DE3719868A1 (de) * | 1987-06-13 | 1988-12-22 | Messerschmitt Boelkow Blohm | Laserdiode |
| US4789843A (en) * | 1987-07-28 | 1988-12-06 | Hicks John W | Laser diode optical modulating devices |
| US4878222A (en) * | 1988-08-05 | 1989-10-31 | Eastman Kodak Company | Diode laser with improved means for electrically modulating the emitted light beam intensity including turn-on and turn-off and electrically controlling the position of the emitted laser beam spot |
| JPH06222087A (ja) * | 1993-01-27 | 1994-08-12 | Hamamatsu Photonics Kk | 電圧検出装置 |
| JP5735216B2 (ja) * | 2009-02-27 | 2015-06-17 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3257626A (en) * | 1962-12-31 | 1966-06-21 | Ibm | Semiconductor laser structures |
| US3290539A (en) * | 1963-09-16 | 1966-12-06 | Rca Corp | Planar p-nu junction light source with reflector means to collimate the emitted light |
-
1964
- 1964-05-01 US US364194A patent/US3518574A/en not_active Expired - Lifetime
-
1965
- 1965-03-26 GB GB13072/65A patent/GB1062725A/en not_active Expired
- 1965-04-24 DE DE1489344A patent/DE1489344C3/de not_active Expired
- 1965-04-28 SE SE5592/65A patent/SE311407B/xx unknown
- 1965-04-29 NL NL656505576A patent/NL144789B/xx unknown
- 1965-05-03 CH CH614865A patent/CH435478A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1489344A1 (de) | 1969-04-03 |
| US3518574A (en) | 1970-06-30 |
| NL6505576A (xx) | 1965-11-02 |
| NL144789B (nl) | 1975-01-15 |
| CH435478A (de) | 1967-05-15 |
| DE1489344B2 (de) | 1974-10-17 |
| DE1489344C3 (de) | 1975-06-12 |
| GB1062725A (en) | 1967-03-22 |