SE300472B - - Google Patents
Info
- Publication number
- SE300472B SE300472B SE4119/65A SE411965A SE300472B SE 300472 B SE300472 B SE 300472B SE 4119/65 A SE4119/65 A SE 4119/65A SE 411965 A SE411965 A SE 411965A SE 300472 B SE300472 B SE 300472B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE4119/65A SE300472B (es) | 1965-03-31 | 1965-03-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE4119/65A SE300472B (es) | 1965-03-31 | 1965-03-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE300472B true SE300472B (es) | 1968-04-29 |
Family
ID=20263573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE4119/65A SE300472B (es) | 1965-03-31 | 1965-03-31 |
Country Status (1)
| Country | Link |
|---|---|
| SE (1) | SE300472B (es) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2130457A1 (de) * | 1970-07-31 | 1972-02-03 | Fairchild Camera Instr Co | Halbleiterbauelement |
| US3946418A (en) * | 1972-11-01 | 1976-03-23 | General Electric Company | Resistive gate field effect transistor |
| US4009483A (en) * | 1974-04-04 | 1977-02-22 | Motorola, Inc. | Implementation of surface sensitive semiconductor devices |
| US4012762A (en) * | 1974-06-24 | 1977-03-15 | Sony Corporation | Semiconductor field effect device having oxygen enriched polycrystalline silicon |
| US4014037A (en) * | 1974-03-30 | 1977-03-22 | Sony Corporation | Semiconductor device |
| US4062033A (en) * | 1975-04-25 | 1977-12-06 | Sony Corporation | Schottky barrier type semiconductor device |
| US4062707A (en) * | 1975-02-15 | 1977-12-13 | Sony Corporation | Utilizing multiple polycrystalline silicon masks for diffusion and passivation |
| US4080619A (en) * | 1975-04-30 | 1978-03-21 | Sony Corporation | Bipolar type semiconductor device |
| US4157563A (en) * | 1971-07-02 | 1979-06-05 | U.S. Philips Corporation | Semiconductor device |
| US4176372A (en) * | 1974-03-30 | 1979-11-27 | Sony Corporation | Semiconductor device having oxygen doped polycrystalline passivation layer |
| US4194934A (en) * | 1977-05-23 | 1980-03-25 | Varo Semiconductor, Inc. | Method of passivating a semiconductor device utilizing dual polycrystalline layers |
| US4297149A (en) * | 1980-05-05 | 1981-10-27 | Rca Corporation | Method of treating SiPOS passivated high voltage semiconductor device |
| US4322452A (en) * | 1977-07-05 | 1982-03-30 | Siemens Aktiengesellschaft | Process for passivating semiconductor members |
| US4649414A (en) * | 1981-09-14 | 1987-03-10 | Oki Electric Industry Co., Ltd. | PNPN semiconductor switches |
| US4757362A (en) * | 1980-05-30 | 1988-07-12 | Sharp Kabushiki Kaisha | High voltage MOS transistor |
| US4766474A (en) * | 1980-05-30 | 1988-08-23 | Sharp Kabushiki Kiasha | High voltage MOS transistor |
| US4947232A (en) * | 1980-03-22 | 1990-08-07 | Sharp Kabushiki Kaisha | High voltage MOS transistor |
-
1965
- 1965-03-31 SE SE4119/65A patent/SE300472B/xx unknown
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2130457A1 (de) * | 1970-07-31 | 1972-02-03 | Fairchild Camera Instr Co | Halbleiterbauelement |
| US4157563A (en) * | 1971-07-02 | 1979-06-05 | U.S. Philips Corporation | Semiconductor device |
| US3946418A (en) * | 1972-11-01 | 1976-03-23 | General Electric Company | Resistive gate field effect transistor |
| US4014037A (en) * | 1974-03-30 | 1977-03-22 | Sony Corporation | Semiconductor device |
| US4176372A (en) * | 1974-03-30 | 1979-11-27 | Sony Corporation | Semiconductor device having oxygen doped polycrystalline passivation layer |
| US4009483A (en) * | 1974-04-04 | 1977-02-22 | Motorola, Inc. | Implementation of surface sensitive semiconductor devices |
| US4012762A (en) * | 1974-06-24 | 1977-03-15 | Sony Corporation | Semiconductor field effect device having oxygen enriched polycrystalline silicon |
| US4062707A (en) * | 1975-02-15 | 1977-12-13 | Sony Corporation | Utilizing multiple polycrystalline silicon masks for diffusion and passivation |
| US4062033A (en) * | 1975-04-25 | 1977-12-06 | Sony Corporation | Schottky barrier type semiconductor device |
| US4080619A (en) * | 1975-04-30 | 1978-03-21 | Sony Corporation | Bipolar type semiconductor device |
| US4194934A (en) * | 1977-05-23 | 1980-03-25 | Varo Semiconductor, Inc. | Method of passivating a semiconductor device utilizing dual polycrystalline layers |
| US4322452A (en) * | 1977-07-05 | 1982-03-30 | Siemens Aktiengesellschaft | Process for passivating semiconductor members |
| US4947232A (en) * | 1980-03-22 | 1990-08-07 | Sharp Kabushiki Kaisha | High voltage MOS transistor |
| US4297149A (en) * | 1980-05-05 | 1981-10-27 | Rca Corporation | Method of treating SiPOS passivated high voltage semiconductor device |
| US4757362A (en) * | 1980-05-30 | 1988-07-12 | Sharp Kabushiki Kaisha | High voltage MOS transistor |
| US4766474A (en) * | 1980-05-30 | 1988-08-23 | Sharp Kabushiki Kiasha | High voltage MOS transistor |
| US4649414A (en) * | 1981-09-14 | 1987-03-10 | Oki Electric Industry Co., Ltd. | PNPN semiconductor switches |