[go: up one dir, main page]

SE0103726L - En kisel-germanium mesa transistor, en metod för dess framställning och en integrerad krets innefattande en sådan transistor - Google Patents

En kisel-germanium mesa transistor, en metod för dess framställning och en integrerad krets innefattande en sådan transistor

Info

Publication number
SE0103726L
SE0103726L SE0103726A SE0103726A SE0103726L SE 0103726 L SE0103726 L SE 0103726L SE 0103726 A SE0103726 A SE 0103726A SE 0103726 A SE0103726 A SE 0103726A SE 0103726 L SE0103726 L SE 0103726L
Authority
SE
Sweden
Prior art keywords
type doped
transistor
silicon
region
subcollector
Prior art date
Application number
SE0103726A
Other languages
English (en)
Other versions
SE0103726D0 (sv
SE522891C2 (sv
Inventor
Hans Norstroem
Ted Johansson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE0103726A priority Critical patent/SE522891C2/sv
Publication of SE0103726D0 publication Critical patent/SE0103726D0/sv
Priority to TW090129304A priority patent/TW512441B/zh
Priority to PCT/SE2002/001875 priority patent/WO2003041152A1/en
Publication of SE0103726L publication Critical patent/SE0103726L/sv
Publication of SE522891C2 publication Critical patent/SE522891C2/sv
Priority to US10/828,712 priority patent/US7008851B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Bipolar Transistors (AREA)
SE0103726A 2001-11-09 2001-11-09 En kisel-germanium mesa transistor, en metod för dess framställning och en integrerad krets innefattande en sådan transistor SE522891C2 (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE0103726A SE522891C2 (sv) 2001-11-09 2001-11-09 En kisel-germanium mesa transistor, en metod för dess framställning och en integrerad krets innefattande en sådan transistor
TW090129304A TW512441B (en) 2001-11-09 2001-11-27 Silicon-germanium mesa transistor
PCT/SE2002/001875 WO2003041152A1 (en) 2001-11-09 2002-10-15 Silicon-germanium mesa transistor
US10/828,712 US7008851B2 (en) 2001-11-09 2004-04-21 Silicon-germanium mesa transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0103726A SE522891C2 (sv) 2001-11-09 2001-11-09 En kisel-germanium mesa transistor, en metod för dess framställning och en integrerad krets innefattande en sådan transistor

Publications (3)

Publication Number Publication Date
SE0103726D0 SE0103726D0 (sv) 2001-11-09
SE0103726L true SE0103726L (sv) 2003-05-10
SE522891C2 SE522891C2 (sv) 2004-03-16

Family

ID=20285918

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0103726A SE522891C2 (sv) 2001-11-09 2001-11-09 En kisel-germanium mesa transistor, en metod för dess framställning och en integrerad krets innefattande en sådan transistor

Country Status (4)

Country Link
US (1) US7008851B2 (sv)
SE (1) SE522891C2 (sv)
TW (1) TW512441B (sv)
WO (1) WO2003041152A1 (sv)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7002221B2 (en) * 2003-08-29 2006-02-21 International Business Machines Corporation Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same
US7550787B2 (en) 2005-05-31 2009-06-23 International Business Machines Corporation Varied impurity profile region formation for varying breakdown voltage of devices
TW200849556A (en) * 2006-06-14 2008-12-16 Nxp Bv Semiconductor device and method of manufacturing such a device
KR100839786B1 (ko) 2006-09-20 2008-06-19 전북대학교산학협력단 실리콘게르마늄 반도체 소자 구조 및 그 제조방법
CN101960584B (zh) * 2008-02-28 2013-11-20 Nxp股份有限公司 半导体器件及其制造方法
JP2010251368A (ja) * 2009-04-10 2010-11-04 Renesas Electronics Corp バイポーラトランジスタ及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4417916A1 (de) * 1994-05-24 1995-11-30 Telefunken Microelectron Verfahren zur Herstellung eines Bipolartransistors
DE19609933A1 (de) * 1996-03-14 1997-09-18 Daimler Benz Ag Verfahren zur Herstellung eines Heterobipolartransistors
SE512813C2 (sv) * 1997-05-23 2000-05-15 Ericsson Telefon Ab L M Förfarande för framställning av en integrerad krets innefattande en dislokationsfri kollektorplugg förbunden med en begravd kollektor i en halvledarkomponent, som är omgiven av en dislokationsfri trench samt integrerad krets framställd enligt förfarandet
WO2001020664A1 (en) 1999-09-17 2001-03-22 Telefonaktiebolaget Lm Ericsson A self-aligned method for forming deep trenches in shallow trenches for isolation of semiconductor devices
US6251738B1 (en) * 2000-01-10 2001-06-26 International Business Machines Corporation Process for forming a silicon-germanium base of heterojunction bipolar transistor
US6346453B1 (en) * 2000-01-27 2002-02-12 Sige Microsystems Inc. Method of producing a SI-GE base heterojunction bipolar device
US6797580B1 (en) * 2003-02-21 2004-09-28 Newport Fab, Llc Method for fabricating a bipolar transistor in a BiCMOS process and related structure

Also Published As

Publication number Publication date
TW512441B (en) 2002-12-01
US20040201039A1 (en) 2004-10-14
SE0103726D0 (sv) 2001-11-09
US7008851B2 (en) 2006-03-07
WO2003041152A1 (en) 2003-05-15
SE522891C2 (sv) 2004-03-16

Similar Documents

Publication Publication Date Title
KR100354118B1 (ko) 헤테로접합 바이폴라 트랜지스터의 실리콘-게르마늄베이스를 형성하기 위한 공정
CN106298896B (zh) 在有源装置区中具有埋入介电区的双极结晶体管
US20070001264A1 (en) High performance integrated vertical transistors and method of making the same
US8652919B2 (en) Tunable semiconductor device
US20090203184A1 (en) Self-Aligned Epitaxially Grown Bipolar Transistor
SE0103726L (sv) En kisel-germanium mesa transistor, en metod för dess framställning och en integrerad krets innefattande en sådan transistor
US11158722B2 (en) Transistors with lattice structure
US10217852B1 (en) Heterojunction bipolar transistors with a controlled undercut formed beneath the extrinsic base
US8039351B2 (en) Method of fabricating hetero-junction bipolar transistor (HBT)
US11848192B2 (en) Heterojunction bipolar transistor with emitter base junction oxide interface
US7109567B2 (en) Semiconductor device and method of manufacturing such device
US20090114950A1 (en) Semiconductor Device and Method of Manufacturing such a Device
US7671447B2 (en) Bipolar transistor and method of manufacturing the same
US20230032080A1 (en) Asymmetric lateral bipolar transistor and method
US11848374B2 (en) Bipolar junction transistors including a portion of a base layer inside a cavity in a dielectric layer
EP4216280A1 (en) Vertical bipolar transistors on soi substrates with the collectors in the buried oxide
TW202427798A (zh) 具有切割應力襯墊的異質接面雙極電晶體
KR20070032388A (ko) 반도체 디바이스 및 그 제조 방법
JPH01187867A (ja) 半導体集積回路装置
JPH10135345A (ja) 半導体集積回路
JPH04290234A (ja) 半導体装置
JPH03157935A (ja) 半導体集積回路
JPS63144569A (ja) 半導体装置
JPH09232441A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
NUG Patent has lapsed