RU2705516C1 - Semiconductor structure manufacturing method - Google Patents

Abstract

FIELD: electrical engineering.

SUBSTANCE: invention relates to technology for production of semiconductor devices, particularly to production of semiconductor structures with low density of defects. Technology of the method is as follows: on a sapphire substrate, a layer of aluminum nitride 30–50 nm thick is formed by reactive ion-plasma spraying using a target from aluminum in plasma of especially pure nitrogen without adding argon at pressure (3–5)10^-3 mm Hg and substrate temperature of 200–250 °C. Then, pyrolytically deposited layer of silicon at a film growth rate of 15 nm/s at temperature of 1,000–1,150 °C at consumption of hydrogen and silane accordingly 15 l/min and 50 ml/min.

EFFECT: invention provides reduced density of defects, improved manufacturability, improved parameters of structures, high quality and high percentage yield.

1 cl, 1 tbl

Description

The invention relates to the field of production technology of semiconductor devices, in particular to a technology for the manufacture of semiconductor structures with a low density of defects.

A known method of manufacturing a semiconductor structure [Application 1246851 Japan, MKI H01L 21/94] by applying a layer of SiO ₂ on the surface of the base of molybdenum or a silicon wafer; in the first case, the chemical vapor deposition method is used for this purpose; in the second case, the thermal oxidation method is used. Then, a horizontally located silicon wafer and a molybdenum base facing each other with a layer of SiO ₂ are brought into contact and glued. Subsequent grinding and polishing of the silicon wafer from the back side achieve the surface of the required processing class. In such structures, at different temperature conditions and in different environments, the defectiveness of the structure increases and the electrical parameters of the devices deteriorate.

A known method of manufacturing a semiconductor structure [US Patent 4962051, MKI H01L 21/265] by forming an intermediate layer doped with an isoelectronic impurity. The atoms of the isoelectronic impurity have an excellent covalent radius from the atoms of the substrate material, resulting in a large number of misfit dislocations at the layer / substrate interface. Subsequently, epitaxial buildup of the semiconductor working layer is carried out. In this case, mismatch dislocations located in the plane of the interface also arise at the interface between the working layer / layer doped with an isoelectronic impurity.

The disadvantages of this method are the high density of defects, increased values of leakage current and low manufacturability.

The problem solved by the invention: reducing the density of defects, ensuring manufacturability, improving the parameters of structures, improving quality and increasing the percentage of yield.

The problem is solved by the formation of a layer of aluminum nitride with a thickness of 30-50 nm on a sapphire substrate by reactive ion-plasma spraying at a pressure of (3-5) 10 ^-3 mm. Hg, substrate temperature 200-250 ° C, followed by deposition of silicon with a film growth rate of 15 nm / s, at a temperature of 1000-1150 ° C, with a flow of hydrogen and silane, respectively, 15 l / min and 50 ml / min

The technology of the method consists in the following: on a sapphire substrate an aluminum nitride layer of 30-50 nm thick is formed by reactive ion-plasma sputtering using an aluminum target of grade A-999 in a plasma of very pure (99.999) nitrogen without adding argon, at a pressure of (3- 5) 10 ^-3 mmHg and a substrate temperature of 200-250 C. Then, a silicon layer is pyrolytically deposited with a film growth rate of 15 nm / s, at a temperature of 1000-1150 ° C, with a flow rate of hydrogen and silane, respectively, 15 l / min and 50 ml / min.

According to the proposed method, semiconductor structures were manufactured and investigated. The processing results are presented in the table.

Experimental studies have shown that the yield of suitable structures on a batch of plates formed in the optimal mode increased by 14.8%.

Effect: reducing the density of defects, ensuring manufacturability, improving the parameters of structures, improving quality and increasing the percentage of yield.

The stability of the parameters over the entire operational temperature range was normal and consistent with the requirements.

The proposed method of manufacturing a semiconductor structure by forming a layer of aluminum nitride with a thickness of 30-50 nm on a sapphire substrate by reactive ion-plasma spraying at a pressure of (3-5) 10 ^-3 mm Hg, substrate temperature 200-250 ° C, followed by pyrolytic deposition of silicon with a film growth rate of 15 nm / s, at a temperature of 1000-1150 ° C, at a flow rate of hydrogen and silane, respectively, 15 l / min and 50 ml / min, will increase the yield of suitable devices and improve their reliability.

Claims (1)

A method of manufacturing a semiconductor structure, including a substrate, the formation of an intermediate layer, processes of increasing the working layer of a semiconductor, characterized in that the structure is formed on a sapphire substrate by applying a layer of aluminum nitride with a thickness of 30-50 nm by reactive ion-plasma spraying, at a pressure of (3-5) 10 ^-3 mm Hg, substrate temperature 200-250 ° C followed by deposition of silicon with a film growth rate of 15 nm / s at a temperature of 1000-1150 ° C at a flow rate of hydrogen and silane respectively 15 l / min and 50 ml / min .